Leading innovation from within
Needham Conference - January 2020
Leading innovation from within Introduction to IQE IQE the scaled - - PowerPoint PPT Presentation
Needham Conference - January 2020 Leading innovation from within Introduction to IQE IQE the scaled global epitaxy leader Our Business Units Key Facts Wireless Headquartered in Cardiff, UK Epi wafers for handset and telecommunications
Needham Conference - January 2020
2 Our Sites and Technologies MOCVD MBE Substrates Wireless Photonics Cardiff, UK (HQ)
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Newport, UK
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Milton Keynes, UK
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Spokane, US
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Massachusetts, US
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Pennsylvania, US
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N Carolina, US
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Taiwan
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Singapore
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MOCVD = Metal Organic Chemical Vapour Disposition MBE = Molecular Beam Epitaxy
USA
Taunton, MA Greensboro, NC Bethlehem, PA Spokane, WA
Europe
Newport, UK Cardiff, UK àCSC Milton Keynes, UK
Asia
Taiwan Singapore àCSDC
Where we operate
Asia
30%
Americas
60%
Europe
10%
Wireless
Epi wafers for handset and telecommunications infrastructure.
Photonics
Epi wafers (lasers) for use in 3D sensing, fibre optic communications and military infra-red. Substrates for infra-red applications.
Our Business Units Headquartered in Cardiff, UK 2019 Revenue £136 to 142m 650 staff across 9 global sites Key Facts
Geographical Revenues
Agnostic to winners and losers at the Chip and OEM level
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Wafer Production
Substrate Epitaxy process
Chip Fabrication Device Manufacture
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5G infrastructure 5G handsets 3D sensing in smartphones 3D sensing beyond the smartphone Lasers for commercial applications
base stations and small cells
high-efficiency Power Amplifiers
Switches and Filters (BAW and SAW)
cameras
and Time of Flight (ToF)
applications
lasers for fibre
DFBs, APDs and PINs)
applications
health monitoring
There will be an inflection in demand for compound semiconductors driven by macro trends in the technology industry
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Delivering shareholder value Expanding margins and cash generation
Research & development New products Manufacturing capacity Customer qualification Mass production
High barriers to entry exist due to IQE’s IP Portfolio (both patents and know-how), lead times to create products and construct facilities and the process of customer qualification
The speed of supply chain shifts from US to Asia has been rapid but highly disruptive in the short-term
IQE is well placed to adapt to Global supply chain shifts resulting from Geopolitical tensions
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Expected weakness in handset market in H1 Geopolitical tensions have reduced volumes & created conservatism in supply chains IQE’s global manufacturing footprint and position as materials solutions provider, supplying the whole market, mean we are well placed to adapt As the macro trends
devices play out, IQE remains uniquely placed to capitalise on an expanding market for compound semiconductors Foresight Conservatism Anticipated disruption Adaptable Well positioned
Progress has been made to ensure the business is well-positioned for future growth opportunities
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Newport Mega Foundry constructed and now in production for existing large OEM plus a major chip customer in Android supply chain. Ten tools installed, capacity for 100 tools. Capacity expansion completed in Taiwan to enable 40% higher volumes,
Closure of New Jersey (US) site and expansion of GaN capacity at Massachusetts (US) site Targeted cost reductions across the group completed Singapore JV (CSDC) bought back under 100% ownership to tackle Asian market opportunity and restructure cost base Credit facilities increased to £57m (year end net debt of £15-20m)
Current guidance for 2019 is £136m to £142m with return to growth expected in 2020
9 114 133 155 156 136 2015 2016 2017 2018 2019 2020 2021 2022
GBP £’m Return to Growth Drivers in 2020:
Taiwanese foundries
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2017: Initial VCSEL ramp 2018: VCSEL inventory correction 2019/20: Asian supply chain shifts Stabilisation = Moderate Growth Market opportunity growing at 25-30% CAGR driven by 5G and Connected Devices macro trends
5.7 12.2 6.3 24.1 19 H1 FY17 H2 FY17 H1 FY18 H2 FY18 H1 FY19
Capex Cashflows £’m
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Cash used for capex
following the capacity expansion investment. Maintenance capex is in the region of single digit millions. There is sufficient capacity in the group to underpin 2020 growth scenarios. The decision on investment in the next five G4 reactors for Newport will be made in 2020 and be based on projections for 2021 revenue.
4.1 12.3 19.4 19.5 19.1 H1 FY17 H2 FY17 H1 FY18 H2 FY18 H1 FY19
PPE Additions £’m Intangible Capitalisation
‒ £4.8m capitalised R&D ‒ £0.9m purchase of intangible assets
the half year
Infrastructure expansion substantially complete
with the next 10 cleanrooms nearing completion
by 40%
discretionary and linear with future revenue
Healthcare Big Data Sensing LiDAR Connectivity
Portable Telehealth Monitoring Robotics and Automation Autonomous Driving Connected Vehicles Energy Generation LEDs Solar Energy Industrial Heating Office Communications Satellite Communications 5G Base Stations 5G Small Cell Networks Augmented Reality 3D Sensing Personal Devices Security WiFi Electrification Diagnostics High-Speed Data Centers AI Machine Vision Medical Imaging
Compound semiconductors everywhere
Smart Grids
Leading innovation from within
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5G Infrastructure Rollout:
3D Sensing Proliferation:
applications
integration
Potential addressable market growth of 25-30% CAGR over next 5 years
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Next 18 months Next 2 to 3 years Long Term
High Speed Datacoms:
(Distributed Feedback Lasers)
(Avalanche Photo Diodes)
Asian Market Wireless Demand:
for handsets
3D Sensing Proliferation:
(High/Mid end)
(ToF)
Environmental & Health Monitoring LiDAR Connected Devices Smart Grids 5G Infrastructure Rollout:
5G Handset Opportunity:
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phones
high-end Android
in volume products
Sensing
camera
standards drive adoption
even low-end smartphones
drive adoption
development of LIDAR
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IQE’s Market position is a result of
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Manufacturing Platform
Increasing volume, lower unit cost
Wafer Size
Larger Die Size, lower cost per chip, opens up Si chip fab capacity
Emission Wavelength
Eye Safety, Higher Power for LIDAR
Integration and Miniaturisation
Lower unit cost per device, higher share for IQE, expands market opportunity
300 mm 200 mm 150 mm
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Grating – viewed by Scanning Electron Microscope XX X X X X X X X X X X X X X X X X X X X X X X X X XXX Overgrowth Grating Base
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Each element has its own T/R
Si CMOS and SiGe require >10x the number of antenna elements relative to GaN
1kHz 1MHz 1GHz 10GHz
Frequency Voltage Rating
Inverters
(Motor controls, PV, UPS)
IT & Consumer Power Supplies EV / HEV Grid Wind Rail DC-DC Conversion CATV Infrastructure A&D 50V 200V 600V 1,200V
GaN uniquely positioned to address
GaN Power Electronics GaN RF
mmWave 5G
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1kHz 1MHz 1GHz 10GHz
Frequency Voltage Rating
50V 200V 600V 1,200V
GaN / GaN GaN/Si GaN / SiC
GaN/Si
and
GaN/SiC
GaN Power Electronics
GaN RF
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Source: Yole (2019)
2018 2024
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Source: Yole (2019) 28
Source: Yole (2019) 29
Source: Yole (2019) 30
HBT PAs HBT PAs HBT PAs BiHEMT PAs BiHEMT PAs Proximity sensors 3D sensors
Face recognition
TOF sensors
Camera focus
Proximity sensors 3D sensors
World facing / AR-VR
TOF sensors
Camera focus
Accessory sensors 3D sensors
Face recognition
Integrated optics
VCSEL/DOE/WLO
SAW & BAW Filters 5G mm wave Porous Si Switches
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