Atomic Layer Deposition of Hafnium Oxide at Temperatures below 100ºC
- K. C. Kragh
- Dept. of Physics and Optical Engineering,
K. C. Kragh Dept. of Physics and Optical Engineering, Rose-Hulman - - PowerPoint PPT Presentation
Atomic Layer Deposition of Hafnium Oxide at Temperatures below 100C K. C. Kragh Dept. of Physics and Optical Engineering, Rose-Hulman Institute of Technology REU Student in the Advanced Materials Research Laboratory, University of Illinois
SiO2 Al Ti
50 100 150 200 250 20 40 60 80 100 120 140 160 Reactor Temperature (ºC) Average Thickness (Å)
Image: Simon Garrett http://www.cem.msu.edu/~cem924sg/Topic09.pdf
XPS Survey across HfO2 deposited on Silicon at 60ºC
200 400 600 800 1000 Binding Energy (eV)
531 eV O 1s 213 eV and 224 eV Hf 4d5/2 and 4d3/2 381 eV Hf 4p3/2 439 eV Hf 4p1/2 282 eV C 1 s 17eV Hf 4f
062308 Reactor at 60ºC for 5s pulses XPS Hf 4f scan after sputtering
14 16 18 20 22
Binding Energy (eV) Intensity (a.u.)
17.6 eV 19.3 eV
14 16 18 20 22 Binding Energy (eV) Intensity (a.u.) 30ºC 40ºC 60ºC 70ºC 80ºC
Top Image: Berserker79 http://en.wikipedia.org/wiki/Image:Pcl_synthesis.png Right Image: Dr. Alan W. Nicholls & K. C. Kragh