INF5470 Fall 2012 Lecture 10: Analog Storage Content Overview - - PowerPoint PPT Presentation

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INF5470 Fall 2012 Lecture 10: Analog Storage Content Overview - - PowerPoint PPT Presentation

INF5470 Fall 2012 Lecture 10: Analog Storage Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 2


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INF5470 — Fall 2012

Lecture 10: Analog Storage

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

Lecture 10: Analog Storage 2

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

Lecture 10: Analog Storage 3

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Overview

◮ volatile short term storage

◮ capacitive storage/dynamic storage

◮ volatile long term storage

◮ digital storage and DAC ◮ capacitive storage with refresh ◮ multi level flipflops

◮ non-volatile storage

◮ floating gates, analog flash ROM Lecture 10: Analog Storage 4

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

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Capacitive Storage

In contrast to digital DRAM there is no means for an ’analog refresh’. Thus, this is only useful for short term storage.

in/out

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

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AD/DA Multi-Level Storage

Ci Iin/restore Iout/restore Ib Ci Iin/restore Iout/restore Ib 4Ib 2Ib Ib C2 C1 C0 Iw Isyn restore restore C2 C1 C0

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

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’Fusing’ Amplifier

Vdd

minus plus

  • ut

bias bias minus plus

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+

  • Lecture 10: Analog Storage

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Weak Multi-Level Memory

level<0> +

  • level<1>

+

  • level<2>

+

  • level<3>

+

  • level<4>

+

  • level<5>

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

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Analog ’Flash’/Floating Gate Memory

  • ut

tunneling voltage hot e Vdd down up Lecture 10: Analog Storage 13

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Fowler Nordheim Tunneling Band Diagram

gate channel distance for tunneling 3.2eV e -

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High Voltage nFET

n+ n- poly n+ p-

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High Voltage Switch

Vdd bias HV Nwell drain Nwell drain switch OUT

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Content

Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions

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Weekly Questions

  • 1. In the light of the introductory lecture about analog

CMOS: why is EEPROM storage potentially difficult in more advanced standard technologies, like 90nm, 65nm ... CMOS?

  • 2. By what mechanism do you imagine a synaptic weight

could be changed in a biological synapse? One would be that the amount of neurotransmitter release in the synaptic cleft changes. Can you think of others?

Lecture 10: Analog Storage 18