ILGAD - A p-in-p Position-Sentitive-Detector with low signal - - PowerPoint PPT Presentation

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Dec 20, 2022 257 likes •488 views

ILGAD - A p-in-p Position-Sentitive-Detector with low signal amplification M. Fernndez, J. Gonzlez, R. Jaramillo, D. Moya, A.Ruiz, I. Vila. Instituto de Fsica de Cantabria(CSIC-UC) M. Baselga, S. Hidalgo, A. Merlos, V. Greco, G.

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SLIDE 1

ILGAD - A p-in-p Position-Sentitive-Detector with low signal amplification

  • M. Fernández, J. González, R. Jaramillo, D. Moya, A.Ruiz, I. Vila.

Instituto de Física de Cantabria(CSIC-UC)

  • M. Baselga, S. Hidalgo, A. Merlos, V. Greco, G. Pellegrini, D. Quirion.

Centro Nacional de Microelectrónica at Barcelona (CSIC) F.R. Palomo Universidad de Sevilla

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SLIDE 2

Work supported by RD50 - Radiation hard semiconductor devices for very high luminosity colliders.

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  • I. Vila - ALCW 2015 April 20th, Tsukuba, Japan.

RD50 participating Institutes in this project: CNM-Barcelona, G. Pellegrini, Giulio.Pellegrini@cnm-imb.csic.es Liverpool University, Gianluigi Casse, gcasse@hep.ph.liv.ac.uk UC Santa Cruz, Hartmut Sadrozinki, hartmut@ucsc.edu IFCA Santander, Ivan Vila, ivan.vila@csic.es University of Glasgow, Richard Bates, Richard.bates@glasgow.ac.uk INFN Florence, Mara Bruzzi, mara.bruzzi@unifi.it CERN, M. Moll, Michael.Moll@cern.ch Jozef Stefan Institute , G. Kramberger, Gregor.Kramberger@ijs.si IFAE Barcelona, S. Grinstein, sgrinstein@ifae.es INFN Torino, N. Cartiglia <cartiglia@to.infn.it>

http://rd50.web.cern.ch/

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SLIDE 3

Outline

— Motivations for the R&D. — Reach-through APD layout — Low Gain Avalanche Detectors: PADs and

Microstrips.

— Experimental characterization of LGADs — Inverse-LGAD: Layout and TCAD

simulation.

— Summary

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 4

R&D Motivation

— In a ILC environment with low hadron fluences and

no active cooling, the material budget dominated by sensor’s material in the detector fiducial volume.

— Implementing a small signal gain in microstrip

sensors can reduce the thickness of the sensors without reducing the signal amplitude keeping the same SNR ratio.

— A relatively small signal gain (5-10) needed to

allow the use of standard readout front-end without signal saturation.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 5

Enabling technology: Reach-Trough Avalanche Photo-Diodes (1)

— RT-APD, lightly doped p-substrate with two-

diffusions to created a local high-field region (impact ionization  signal multiplication)

— Low Gain Avalanche Detector (LGAD): the gain p-

layer engineered (doping and depth) to achieve low signal gain.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 6

LGADs: Technical challenges

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.

Core Region  Uniform electric field, high enough to activate mechanism of impact ionization (multiplication) Termination  High electric field confined in the core region Periphery  (Dead region) Charges should not be collected. Reduction of the leakage currents

Electric Field @ 400 V

N+ P π

𝑾𝑪𝑬|𝐔𝐟𝐬𝐧𝐣𝐨𝐛𝐮𝐣𝐩𝐨 ≫ 𝑾𝑪𝑬|𝑫𝒇𝒐𝒖𝒔𝒃𝒎

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SLIDE 7

PAD LGAD: Gain and Noise

— Small noise excess factor

(introduced by the stochastic nature of the multiplication process.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
  • G. Kramberger
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SLIDE 8

PAD LGAD: Red laser TCT characterization

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
285 um

e- drift h+ drift Red laser (670 nm)

Bottom injection

STANDARD PIN DIODE LGAD DIODE

5ns e-h pairs generation Electron multiplication Current from secondary holes Current from primary electrons I (Arb. Unit) Time Current from primary electrons

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SLIDE 9

PAD LGAD : Response uniformity.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 10

Strip LGAD: Segmented applification

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.

P-Stop P-Multiplication N+ Cathode Aluminum Passivation

N on P microStrips. PiN vs LGAD

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SLIDE 11

Strip LGAD: Amplification region geometry

— Several layouts with different p-well width and n-well depth were

manufactured.

— BUT most of them presented reduced breakdown voltage and

large inverse current. A new run with optimized p-well engineering just produced.

— A few samples displayed breakdown voltage above depletion

  • voltage. There were tested with microspot ion beams and x-rays.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 12

Strip LGADs: Ion Beam Induced Charge (1)

— Ion Beam Induced Charge at Centro Nacional de

Aceleradores in Seville.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 13

Strip LGAD: Ion Beam Induced Charge(2)

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 14

Strip LGAD: Ion Beam Induced Charge (3)

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 15

Strip LGAD: X-Ray (Diamond Light Source)

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
  • R. Bates
  • D. Maneuski
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SLIDE 16

Strip LGAG: New run available

— Improved amplification p-well engineering.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 17

p-in-p Strip LGAD:The “Inverse” LGAG

— Double-sided LGAD with pad-like multiplication

structure in the back-side and ohmic read out strips in the front side

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.

N on P vs P on P LGAD microStrips Comparison

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SLIDE 18

ILGAD: Pad diode with segmented back-side

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.

P-type (π)substrate N+ Cathode P+ Anode JTE P-type multiplication layer P Stop

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SLIDE 19

ILGAD – TCAD Validation (1)

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.

2D simulation of three p-on-p microstrip LGAD Electric Field 2D Distribution. Maxim @ Junctions

STRIP LGAD STRIP I-LGAD

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SLIDE 20

ILGAD – TCAD Validation (2)

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.

MIP through the middle of the sensors (the central strip) @ 100 V 50 um thick substrate

ILGAD STANDARD

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SLIDE 21

Summary

— Strip sensors with moderated signal gain could

significantly reduce the tracking material budget.

— Low gain Reach-Through APD architecture successfully

implemented and tested in “pad” detectors (LGAD)

— LGAD implemented in n-in-p microstrips sensors with

segmented amplification region (anode).

— No gain observed so far in strips LGAD, new batch with

  • ptimized amplification p-well.

— New design of double-sided p-in-p microstrip LGADs with

cathode strip-like segmented cathode as readout (ILGAD )

— ILGAD TCAD Validation  uniform amplification region

and VBD in main junction.

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.
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SLIDE 22

どうもありがとう ございます Doumo arigatou gozaimasu

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  • I. Vila - ALCW 2015 April 20th, Tokio, Japan.