High-Speed Opto-Electronic Components for Digital and Analog RF - - PowerPoint PPT Presentation

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High-Speed Opto-Electronic Components for Digital and Analog RF Systems

• K. Y. Liou

Director Laser Technology & Government Business Multiplex, Inc. kyliou@multiplexinc.com

WOCC April 23, 2005

5000 Hadley Road South Plainfield, NJ 07080 USA www.multiplexinc.com

SLIDE 2

Active Opto-Electronic Component Solutions for Optical Networks

Custom Design Systems 1550 Transponder 1310 Transponder Tunable EML 980 Pump Laser (EDFA) APD Receiver PIN Receiver 1550 EML (10 Gb/s) 1310 EML (10 Gb/s) 1550 EML (2.5 Gb/s) Access (2-10km) Metro (20-40 km) Regional (60-80 km) Long-Haul 80+ km)

* 2.5Gb/s application extends to >640 km

SLIDE 3

Electro-absorption Modulated Laser (EML)

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<P> (dBm) BER 0 km 50km 85km

1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-12 1E-11 1E-13 1E-15 1E-14

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<P> (dBm) BER 0 km 50km 85km 0 km 50km 85km

1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-12 1E-11 1E-13 1E-15 1E-14 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-12 1E-11 1E-13 1E-15 1E-14 DFB Laser Section EA Modulator Section n-InP Substrate InGaAsP Grating Fe:InP Blocking p-InGaAs/InP Cap Selective-Area MOCVD Grown MQW-SCH HR AR

• MQW DFB laser and EA modulator
• Low cost integration by SAG (selective area growth)
• Fiber packaging same as DFB laser
• 80-km DWDM transmission
• Replaces hybrid-packaged Laser-LiNbO3 modulators

even for long-haul DWDM

10 Gb/s

SLIDE 4

Wavelength Tunable EML

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1.556 1.554 1.552 1.550 1.548 1.546 1.544 1.542

1542 1556

Wavelength (nm.)

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From MOCVD Wafer Growth to Subsystems and Fiber Transmission Test

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Selective Area MOVPE Growth

(1) Indium rich (compressive strain) MQW inside slot (2) Thicker MQW layers inside the slot (Red shifted)

• Vapor phase diffusion
• Surface migration

Z SiO2 mask Eg > 40-50 meV(∆λ≈100 nm) Laser Modulator InP

40-60 µm

Increased concentration Group III Precursors Enhanced

SLIDE 7

Micro Photo Luminescent Measurement

Group-III Precursors

• Vapor-phase diffusion
• Surface migration

Cross-Sectional View During Growth DFB MOD. z z Eg 40 – 50 meV Top View SiO2 mask

80 60 40 20 Wavelegnth Offset (nm) 20 15 10 5 SAG Oxide Width (µm) Quantum Well Number: 9 Wells 7 Wells 3 Wells

• Calibration of SAG-MOCVD growth
• Bandgap λ

λ shift by well thickness (and alloy composition, strain)

• SAG mask design for active (source, modulator, detector)

and passive waveguide integration

SLIDE 8

Cross-sectional Transmission Electron Microscopy

• f MQW and DFB Grating Structure

Grating MQW layers 56.5nm 158.7nm 213.1nm

36.9nm

52.2nm 132.6nm

SLIDE 9

10 Gb/s 85km EML Module

Laser operating current 100mA, modulated power 3.67dBm Filtered eye diagram of 85km EML module

BER Fiber Transmission Test MTX510EW SN: FZ0091 Date: 3/17/2004 Vc2 = -3.70V Cross % = 47% laser current = 100mA Pmod = 3.67dBm

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<P> (dBm) BER

0 km 50km 85km

1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-12 1E-11 1E-13 1E-15 1E-14

SLIDE 10

Tunable EML (DBR laser+EA modulator)

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<P> (dBm) BER.

Ch_0; Back to Back Ch_4; Back to Back Ch_9; Back to Back Ch_0; After 50km Ch_4; After 50km Ch_9; After 50km

1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-12 1E-11 1E-13 1E-14 PRBS=2

31-1 @ 10Gb/s

Relative Power (dB) Wavelength (µm)

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1.556 1.554 1.552 1.550 1.548 1.546 1.544 1.542

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Relative Power (dB) Wavelength (µm)

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1.556 1.554 1.552 1.550 1.548 1.546 1.544 1.542

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• Wavelength tuning

characteristics (12 nm range)

• Fiber transmission test at

50-GHz spaced ITU channels 10 Gb/s TEML

SLIDE 11

2.5 Gb/s 640km EML Module

Laser operating current 60mA, modulated power 0.07dBm Integrated wavelength locker for DWDM Filtered eye diagram of 640km 2.5 Gb/s EML module

SLIDE 12

The Multiplex Family of EMLs

Gen-1 EML Gen-2 EML Gen-3 EML

7-pin with GPO 14-pin butterfly package 21-pin package Industry-standard configuration 30GHz through pin replaces GPO 50GHz RF feed- through pins Qualified to Telcordia GR-468-CORE EML driver IC inside package G-S-G coplanar 50 Ohms ports Qualified to Telcordia GR-468-CORE Integrated driver IC and wavelength locker

SLIDE 13

EMLs

High-Speed

• 2.5G EML w/WLL - Current Product
• 10G GPO EML w/WLL - March/2005
• 10G Tunable EML w/WLL

(5nm Tuning Range) - Current Product

• 10G Tunable EML w/WLL

(12nm Tuning Range) - Q3/2005

• Miniature 10G Tunable EML w/WLL - Q3/2005

Next Generation EML Products

SLIDE 14

Introducing: Injection Locked Laser Transmitter

R&D Team: Multiplex Inc, UC Berkeley, UCSD Sponsored by: DARPA RFLICS

SLIDE 15

Directly Modulated Analog Fiber Optic Links

Laser Output Analog Signal Input Analog Signal

Direct Modulated Link

Issues of Direct Mod Laser – Low RF efficiency – Limited bandwidth – Nonlinear distortions Issues of Direct Mod Laser – Low RF efficiency – Limited bandwidth – Nonlinear distortions Modulation Response Modulation Frequency

Increase Efficiency Increase Bandwidth

SLIDE 16

Monolithic Injection Locking Using Two Section DFB Laser

Optical Circulator Polarization Controller IDC+IRF

Slave Laser

Output

IDC

Master Laser

Conventional Optical Injection Locking: Bench Top

• Single laser package
• No optical isolator / circulator
• Automatic polarization match

and optical alignment

• Current tuning
• Environmentally robust

Slave DFB Master DFB Slave DFB Master DFB

New Monolithic Optical Injection Scheme Invented in RFLICS Program

SLIDE 17

Injection-locking by Two-section DFB Laser

Locking Regime of Externally Injection-locked Laser

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5 10 Stable Locking Unstable Locking Unlocking Unlocking

inj / Pout fr ) [dB]

(= P Injection R atio ∆ f (= fM L fSL) [ G Hz ]

• Linewidth Enhancement Factor α

Asymmetric Stable Locking Range Negative Detuning in Monolithic Injection-locked Laser

Master Master Section Section Slave Slave Section Section Frequency

∆f

Frequency

Injection Locked No isolator between Master & Slave Section

SLIDE 18

Monolithic Injection Locking Using Two Section DFB Laser

• Single laser package
• No optical isolator / circulator
• Automatic polarization match and
• ptical alignment
• Current tuning
• Environmentally robust

New Monolithic Optical Injection Scheme Invented in RFLICS Program Slave DFB Master DFB Fully packaged module with output fiber, optical isolator, master laser power monitor, TEC, RF input port Integrated master-slave laser on submount with 25Ω termination for direct modulation

SLIDE 19

Monolithic Injection-locked laser in 25-GHz fiber-packaged module

20 GHz Modulation Applied to Slave Laser Modulation Response

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free-running (ML 0 mA) Injection-locked (ML 10 mA) Injection-locked (ML 15 mA) Injection-locked (ML 18.6 mA)

Response (dB) Frequency (GHz) SL 73.8 mA Red – injection locked Blue – unlocked

SLIDE 20

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2nd Harmonic Distortion (dBc) ML Current (mA) Locking Range Modulation Freq. = 9 GHz

20 dB

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2nd Harmonic Distortion (dBc) ML Current (mA) Locking Range Modulation Freq. = 9 GHz

20 dB

Monolithic Injection Locked DFB Laser

• Improved RF modulation linearity
• Suppression of harmonic distortion
• Increased spurious-free dynamic range
• Enhanced modulation bandwidth

Enhanced performance without increasing cost by InP-InGaAsP chip integration

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The Multiplex Family of Receivers

Gen-2 Receiver Gen-3 Receiver Gen-1 Receiver PIN PIN and APD versions PIN and APD versions Ultra-compact surface- mount MSA package Single Output Co-planar differential

• utputs

First with integrated limiting amplifier Unique “Gull-Wing” Pins (> 20GHz BW) Small-form package

SLIDE 22

APD (Avalanche Photodiode) Design

Bonding pad Insulator InP Multiplication Region Q-layer InGaAs absorber InP N-contact Center junction Guard ring Charge Layer AR coating Incident light

SLIDE 23

Avalanche Multiplication

Electric Field Hole Electron

M= 8

Electron Current Hole Current

Incident Light

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APD BER Measurement

BER Measurement RP192DL-R2100073

λ=1.55µm; PRBS=2

31-1 @ 10Gb/s

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<P> (dBm) BER

25 Deg. C; V_APD=24.14V 75 Deg. C; V_APD=26.60V

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V_APD=21.84V

1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-12 1E-11 1E-13 1E-14 1E-15

SLIDE 25

RECEIVERS

High-Sensitivity

Next Generation10Gb Receiver Products

• Ultra High Sensitivity APD Receiver: 2-3 dB better sensitivity than

the current APD receiver.

Sample: Q3/2005; Production Q4/2005 ( Ultra Low Noise Lens APD)

• Dispersion Compensation Receivers: Optical dispersion

compensation + Ultra High Sensitivity APD Receiver

Demonstration: Q2/2006

SLIDE 26

The Multiplex Family of Transponders

Gen-1 Transponder Gen-2 Transponder Gen-3 Transponder 200-pin MSA 300-pin MSA 300-pin MSA Flat-Top Ability to mount customer- designed external heat sink MSA small-form-factor: 2” x 3” x 0.5” MSA small-form-factor: 2.2” x 3” x 0.56” DWDM ITU wavelength locked (stabilized) 1310 or 1550nm EML PIN and APD versions Tunable over 16 channels PIN and APD versions SR-1, SR-2, IR-1, IR-2 and LR-2

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The Power of Vertical Integration

2km TXPR (1310) 1310 EML 1550 EML TEML PIN APD 40km TXPR (1550) Tunable TXPR (1550) 80km TXPR (1550) 40km TXPR (1310, dispersion free) 80km Tunable TXPR (1550)

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Core Technology Building Blocks

Products: Expertise: Technology:

APD PIN EML TEML PUMP

Packaging and Assembly RF Design Optical Design IC Design

INTEGRATION

Vertical Integration MOCVD growth & Processing Modules Custom-Design Systems Subsystems

Expanding

Chips Foundry Services EPI-Wafer Growth & Chip Processing Custom Systems Transponders Tunable EMLs Pump Combiner EMLs Receivers Pump Chips

SLIDE 29

Multiplex Facilities

Corporate Headquarters & Front-End Manufacturing

• MOCVD wafer growth
• Chip fabrication
• Administration

Back-End Manufacturing

• Module packaging
• Subsystem Assembly

High-Speed Design Center Facilities are located in South Plainfield, New Jersey

Multiplex Proprietary Information

SLIDE 30

北京市朝阳区建国路88号现代城4号楼3001室

3001 Bldg.4, Xian Dai City 88 Jian Guo Road, Chao Yang District Beijing, 100022 China Tel: 011-86-10-85800526

Multiplex, Inc. Beijing Office