High-Resolution RBS System (HRBS-V500 HRBS1000) KOBE STEEL, LTD - - PowerPoint PPT Presentation

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High-Resolution RBS System (HRBS-V500 HRBS1000) KOBE STEEL, LTD - - PowerPoint PPT Presentation

Oct 18, 2022 461 likes •618 views

1/15 High-Resolution RBS System (HRBS-V500 HRBS1000) KOBE STEEL, LTD Machinery & Engineering Company Advanced Product & Technologies Dept. Outline History for RBS Equipment Hardware of HRBS-V500 Principle of

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KOBE STEEL, LTD． Machinery & Engineering Company Advanced Product & Technologies Dept.

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High-Resolution RBS System (HRBS-V500、 HRBS1000)

・ History for RBS Equipment ・ Hardware of HRBS-V500 ・ Principle of RBS ・ Principle of High-Resolution RBS ・ Examples of High-Resolution RBS ・ Principle & Examples of High-Resolution ERDA ・ Principle of PIXE ・ Comparison of instrumentation

Outline

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History for RBS Equipment

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He+ He+

1 2 3 4 5 1 1 1 1 1

c h a n n e l Y i e l d

1 2 3 4 5 1 1 1 1 1

c h a n n e l Y i e l d

1 2 3 4 5 1 1 1 1 1

c h a n n e l Y i e l d

Si Si Au Si Au Si He+ Si Si Si Au Au

Sample1 Sample2 Sample3

Principle of RBS

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Comparison between conventional ERDA & HERDA

1MeV He+ → DLC mikro-i 500keV N+ → DLC HRBS500

Depth resol Depth resolution < 0.2nm tion < 0.2nm

Hydrogen Hydrogen depth depth profile in thin profile in thin film w film was C CLEARLY measured!! Y measured!! Conventional ERDA High Resolution ERDA

Comparison by DLC(Diamond like Carbon) spectrum between conventional ERDA & HERDA

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Principle of PIXE(Particle Induced X-ray Emission)

When Ion collides with atom, it radiates charasteristic X-ray which is unique in each element. By detecting this X-ray, it turns out what elements and how many elements are included. The feature of PIXE is high detection sensivity which is about ppm order.

L-Xray K-Xray Ion Electron K L M K L M β α β α β α Lα Lβ Lγ M Kα Kβ

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P r i n c i p l e S I M S A E S T E M S T M X R R

H R B S 5 O l d R B S M e t h

  • d

D

  • u

b l e S e m i c

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d u c C r

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s S c a n n i n g X R a y / F e a t u r e f

  • c

u s s i n g t

  • r

S e c t i

  • n

T u n n e l R e f l e c t i

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m a g n e t & M C P d e t e c t

  • r

e l e c t r

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P r

  • b

e 5 k e V H e 1 M e v H e C s / O i

  • n

e l e c t r

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e l e c t r

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n e e d l e H i g h P

  • w

e r X R a y X 線反射率 干渉振動

n

  • n
  • d

e s t r u c t i v e

○ ○ × × × ◎ ◎ D e p t h r e s

  • l

u t i

  • n

. 2 ～0 . 3 n m 1 n m 5 n m 2 n m . 1 n m × 2 ～1 n m C

  • m

p

  • s

i t i

  • n

◎ ◎ ○ △ △ × × S e n s i t i v i t y 1 % . 5 %

. 1 %

. 5 % F e w % F e w % F e w % R e l i a b i l i t y ◎ ◎ △ △ △～☆ ○ △ U s e r

  • f

r i e n d l y ○ ○ △ ○ △ ○ ○ S i m p l i c i t y

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u s e

A t t e n t i

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i s n e e d e d f

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s u r f a c e t r e a t m e n t S e n s i v i t y a d j u s t m e n t i s n e e d e d

C h a r g e u p m e a s u r e i s n e e d e d

P r e p a r a t i

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  • f

s a m p l e i s n e e d e d A t t e n t i

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i s n e e d e d f

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s u r f a c e t r e a t m e n t

A u g e r e l e c t r

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T r a n s m i s s i

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e l e c t r

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T u n n e l c u r r e n t

R B S

D e t e c t i

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P a r t i c l e S c a t t e r e d i

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S e c

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d a r y i

  • n

Comparison of instrumentation(evaluation of thin film)

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