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High Efficiency photovoltaic power plants: the III-V compound solar cells

• G. Gabetta

CESI: who are we? The photovoltaic conversion and the III-V compound semiconductors Solar Cell Manufacturing: MOCVD Solar Cell Manufacturing: Post growth CPV solar cells High efficiency CPV power plants Contents

A Long Legacy in Offering Independent Advise and Unbiased Solutions to Clients in the Energy World

• CESI was incorporated in 1956 as an independent Company
• We like to be Partners to our Clients, to the point that some of

the major European utilities and electromechanical companies are also Shareholders and among them :

• ENEL
• Terna
• Prysmian
• ABB

CESI: Today’s Capabilities for Our clients’ Tomorrow

Extensive References and a Commercial Network in 35 countries Extensive References and a Commercial Network in 35 countries More than 800 Experienced Professionals delivering around 100 M€ of Sales More than 800 Experienced Professionals delivering around 100 M€ of Sales Plants and Testing Laboratories in 5 locations in Italy & Germany Plants and Testing Laboratories in 5 locations in Italy & Germany

• Milan
• Berlin
• Mannheim
• Seriate
• Piacenza

Division Testing and Certification

Solar solutions for Aerospace and terrestrial applications CESI is developing and manufacturing GaAs space solar cells since 1990 and it is presently one of the leading companies in the world. The solar cells are manufactured under an ISO 9001:2000 quality certification and are fully qualified under ESA ECSS. The production is focused on GaAs based materials; to date more than 100.000 solar cells were delivered for more than 60 satellites on 25 different countries. Current performance of the cells : 29% efficiency CESI based on the space experience is developing and manufacturing solar cells for terrestrial applications. Performance of the cells 36% efficiency at 1000 sun. Current manufacturing capacity 18MW/year.

CESI Heritage in III-V solar cells

• CESI is one of the world’s pioneers in developing GaAs solar cells for

both space and terrestrial applications (80 international publications).

• 1975 - 1985: preliminary activities on CPV
• 1982 - today: development of SJ and TJ solar cells for space
• 1990 - today: production of CTJ 28% space solar cells
• 2009: development of TJ solar cells on CESI reactor for terrestrial CPV

application

• 2010- today: qualification and production of CPV CCTJ 38% solar cells

N° of satellites Installed power (kW) Cell surface (m2) N° of cells N° of countries 62* 60 180 >100.000* 18

*(40 in orbit) * (40.000 TJ)

CESI Solar Cell Product Overview

The production is driven and sustained by a continuous R&D effort to increase efficiency and reliability while decreasing the cost for space and terrestrial products.

Name Type/technology Application Field Typical Efficiency Protection Diode Note

CTJ29% InGaP/InGaAs/Ge Space 29% AM0 Si, external Qualification pending, LEO and GEO CTJ28% InGaP/InGaAs/Ge Space 28% AM0 Si, external Qualified, LEO CSJ GaAs/Ge Space 20% AM0 N/A, reverse screen P on N, with ENE S.A. CTJM InGaP/InGaAs/Ge Space 27% AM0 Monolithic Using Emcore wafers CCTJ 38% InGaP/InGaAs/Ge Terrestrial 38% AM1.5 Si, external Suns 800x, qualified

CESI: who are we? The photovoltaic conversion and the III-V compound semiconductors Solar Cell Manufacturing: MOCVD Solar Cell Manufacturing: Post growth CPV solar cells High efficiency CPV power plants Contents

The Sun as energy source

Mass: 1.9891 x 1030 kg Mass Conversion rate: 4.3 x 109 kg/s Luminosity: 3.827 × × × × 1026 W Radiance: 2,009 × × × × 107 W/(sr× × × ×m²) Age: 4.57 × × × × 109 years Lifetime: 1.53 x 1013 years Mean Radius: 0.696 x 106 km Distance from Earth: 1.496 x 108 km AM0 radiance: 1367 W/m2 Key Facts*

* NASA- sun fact sheet

The Solar Spectrum

1.36 kW/m2 1.00 kW/m2

• The total solar energy

absorbed by Earth's atmosphere, oceans and land masses is approximately 3.85 x 1024 J/year.

• In 2002, this was more energy

in one hour than the world used in one year However: The solar energy is distributed and not always available!

Solar Energy components

Global solar exposure The total amount of solar energy falling on a horizontal surface. The daily global solar exposure is the total solar energy for a day: typical values for daily global solar exposure range from 1 to 35 MJ/m2

Direct solar irradiance Direct solar irradiance is a measure of the rate of solar energy arriving at the Earth's surface from the Sun's direct beam, on a plane perpendicular to the beam. Global solar irradiance Global solar irradiance is a measure

• f the rate of total incoming solar

energy (both direct and diffuse) on a horizontal plane at the Earth's surface.

Solar Direct Radiation at Normal Incidence (DNI)

Halthore R. N., et al. 1997. "Comparison of Model Estimated and Measured Direct-Normal Solar Irradiance," J. Geophys. Res. 102(D25): 29991-30002

For Italy: www.solaritaly.enea.it/

The Photovoltaic conversion

Negative Ions Positive ions

• The built in potential of a p-n

junction splits the electron-hole pairs generated by the absorbed photons in the semiconductor crystal Operating the diode in the fourth quadrant generates power

IL

Dark I-V (diode) Illuminated I-V (solar cell)

Photovoltaic conversion

N P

Load

e- Photons + + + +

Collecting grid FF = Voc x Isc/ Vm x Im FF = Voc x Isc/ Vm x Im η η η η = Vm x Im / Psole x Area η η η η = Vm x Im / Psole x Area

Applying a variable load between the Anode and the Cathode

• f the solar cell, the I-V characteristics can be measured. The

figures of merit for the device can be defined as follows:

0.1 0.2 0.3 0.4 0.5 0.6 0.00 0.20 0.40 0.60 0.80 1.00 1.20

VOLTAGE (V) CURRENT (A)

• Fill factor

Conversion efficiency

Main solar cell types

• The photovoltaic effect can be activated in all semiconducting

materials.

• Mainly for commercial reasons the semiconducting materials that

have been used so far in the manufacture of solar cells are summarized in the following table.

Terrestrial Application Plant Type Efficiency AM1.5 Cristalline and polycristalline Silicon Flat plate 12-16% Thin film: CI(G)S, CdTe, amorphous/microcristalline Si Flat plate 8-14% GaAs (CPV) Concentrating PV 38-40% Space Application PVA Type Efficiency AM0 Monocrystalline Si Flat plate (Honeycomb) 14-18% GaAs Flat plate (Honeycomb/mesh) 19%(SJ); 28%(TJ)

The III-V Compound semiconductors

• Ge

Triple junction high efficiency cells require different bandgap semiconductors whose lattice constant is compatible to the crystalline substrate (Germanium).

Terrestrial III-V multijunction solar cells

III-V compound technology showed a steady improvement in the last 30 years

• Unmatched performances: record efficiencies above 41%, possibility to reach 50%
• efficiency. No other technology allows such performances.
• The present overall production capability is worth of a theoretical CPV production

capacity of about 0.5-0.8GW/year (@500x).

• 6” Ge wafer technology already available for CPV
• “Grid Parity” achievable in the medium term: projected 6c$/kWh by 2015.

The III-V compound semiconductors vs the Group IV semiconductors in photovoltaics

Advantages

• Better energy conversion.
• Light gets absorbed in few micrometers below surface.
• With respect to Silicon cells….:
• Higher efficiency devices (28%* vs 18% of best performing

Si)

• Higher radiation resistance for space applications
• Lower temperature degradation
• Extremely efficient operation at very high photon densities

Disadvantages

• Higher cost
• Extremely sophisticated fabrication technology

* TJ cells

InGaP

The III-V solar cells

• Two basic structures:

Single junction solar cells: efficiencies 19-20% (AM0) Triple junction solar cells: efficiencies 28- 30% (AM0)

Substrate: N -Ge Back Contact Window: P+ -AlGaAs Emitter: P+ -GaAs Base: N-GaAs Buffer: N+ -GaAs Grid P+ -GaAs AR AR Tunnel diode Junction 3 Junction 2 Junction 1 Emitter: N+ -GaInP Window: N+ -AlInP Base: P -GaInP BSF: P+ -AlInGaP Grid TD: N++-InGaP TD: P++ -AlGaAs Window: N+ -AlGaAs Emitter: N+ -InGaAs Base: P-InGaAs Buffer: P+ -InGaAs Substrate: P -Ge N+ -GaAs AR AR TD: N++-GaAs TD: P++ -AlGaAs Window: N+ -AlInP Emitter: N -InGaP Contact Tunnel Diode

III-V solar cells manufacture use epitaxy, whereas Silicon cells use diffusion furnaces

The triple junction cells

InGaP InGaAs Ge InGaP InGaAs Ge

• +

_

Non usable part Solar spectrum

Junction 3 Junction 2 Junction 1

The monolithic series connection of three sub- cells is obtained by tunnel diodes The Tunnel diode

• perates in the ohmic portion
• f its I-V characteristics

V I

Basic Features

Single junction Spectral response Triple junction Spectral response

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 350 550 750 950 1150 1350 1550 1750

Wavelength (nm) External QE

Ge Ge GaInP GaInP GaAs GaAs

Important condition: the currents of the 3 sub cells must be comparable to maintain high efficiency! The voltage is the sum of the contributions of each sub cell: Vtot = V1 + V2 + V3 The photocurrent is generated by the limiting cell

Cell Voc Jsc Single 1 V 32 mA/cm2 Triple 2.6 V 17.4 mA/cm2

CESI: who are we? The photovoltaic conversion and the III-V compound semiconductors Solar Cell Manufacturing: MOCVD Solar Cell Manufacturing: Post growth CPV solar cells High efficiency CPV power plants Contents

GaAs AlAs InP AlGaAs InGaP InGaAs AlInGaP AlInGaAs

The Solar cell fabrication technique: MOCVD

• MOCVD stands for Metal-Organic Chemical Vapour Deposition.
• This is a technique for depositing thin layers of atoms onto a

semiconductor wafer.

• Using MOCVD one can build up many layers, each of a precisely

controlled thickness, to create a material which has specific optical and electrical properties.

• Using this technique it's possible to build a range devices like

photodetectors and lasers, that lie at the heart of today’s information revolution…

• …..and also high efficiency solar cells for tomorrow’s energy revolution!

The precursors (metalorganic compounds and hydrides) are carried on the hot substrate in gas phase. The precursors get cracked by the high substrate temperature and originate the solid phase.

Schematic of the process (vertical reactor)

The MOCVD technology

Heating

Out

Boundary Layer

• In
• H2

CH3

• Main features of a MOCVD reactor

Epitaxy = Arranging upon

• Gas carrier: High purity hydrogen
• Ultra high purity of precursor materials (Metalorganics and

Hydrides) and substrates

• Precursors are highly toxic
• “Oil Free” vacuum systems tailored to withstand high hydrogen

fluxes and highly reactive atmospheres.

• fast gas distribution and switching in reaction chamber for strict

control of interface abruptness

• Accurate and direct wafer temperature control for superior

material quality and process efficiency

Safety issues for operators!!!

MOCVD Veeco 450G Reactor Wafer carrier: accommodates up to 13 Ge wafers 100mm diameter

Entry Lock Robot Arm Reactor Glove Box TGA

CESI Epitaxial Reactor

CESI: who are we? The photovoltaic conversion and the III-V compound semiconductors Solar Cell Manufacturing: MOCVD Solar Cell Manufacturing: Post growth CPV solar cells High efficiency CPV power plants Contents

Post growth processes: from the wafer to the solar cell

Grid manufacturing Contact Deposition (Front/Rear) Wafer cutting Chemical etching /cleaning ARC deposition I-V electrical characteristics Acceptance tests

Epi-Wafer Solar cells

Monoli thic Diode n- Conta cts n- Conta cts

Front Contact shaping

Epi-wafer (GaAs) Metal mask (SJ Space)

• Lithography (TJs and CPV)

Photolithography

Spin coater Mask aligner

Ge substrate P-N junction GaAs contact layer Photoresist Ge substrate P-N junction GaAs contact layer mask Photoresist Finger aperture GaAs Contact layer Ge substrate Giunzione bottom Top junction

Fotoresist deposition by spin coating UV exposure Development

Front contact deposition

Deposition techniques:

• Thermal Evaporation in vacuum
• E-gun evaporation

8 cells per wafer Wafer with lithographic mask

Ge substrate PN junction Front contact Excess metal Photoresist

Ge substrate Giunzione bottom Solar cell stack Grid Lift off The lithographic mask and the excess metal are mechanically or chemically lifted, living the front contact in place

Rear contact deposition

Back surface of Ge substrate Deposition techniques

• Thermal evaporation in vacuum
• E-gun evaporation in vacuum

High temperature Sintering

• Low ohmic resistance
• High metal semiconductor adhesion
• NO parasitic MeS junctions

ARC deposition

Reflection

5 10 15 20 25 30 35 40 45 50 300 400 500 600 700 800 900 wavelength (nm) R (%)

No arc

Darc

Solar cell Solar cell

30% 5%

The Broad band ARC:

• reduces the reflection losses
• protects the solar cells during storage

Mesa Etch

• Isolates the single cells at wafer level
• Preserves the ordinated structure at cell edges
• Cell dicing occurs on substrate, epitaxy is not affected

Photoresist coating Epitaxial structure Substrate Etching agent

The etching agent(s) selectively remove(s) the epi-layers preserving the structure’s crystal properties

Wafer cutting

Scribing GaAs wafers only Laser Silicon cells Dicing saw All kinds of solar cells Example: 8 cells per wafer

Solar cell measurement

Typical parameter of a TJ solar cell (AM0, 135.3 mW/cm2, 25°C, bare cells) Open circuit voltage (Voc): 2570 mV Short circuit current (Jsc): 17.4 mA/cm2 Voltage @ Pm 2300 mV Current @ Pm 17mA/cm2 Fill factor: 0.83 Efficiency: 27.5% dVpm/dT:

• 4.0 mV/°C

dImp/dT: 0.017 mA/cm2/°C

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10 20 30 40 50 60 Spettro solare a diverse am wavelength (um) Power (W/m2) AM0 AM5 AM2 AM1.5 IV curve CTJ 29 AM0 25° C

50 100 150 200 250 300 350 400 450 500 0.4 0.8 1.2 1.6 2 2.4 2.8 Voltage (V) Current (mA)

Isc=483 mA Voc=2.606 V Eff.=30.1% Area= 26.5 cm2

CESI: who are we? The photovoltaic conversion and the III-V compound semiconductors Solar Cell Manufacturing: MOCVD Solar Cell Manufacturing: Post growth CPV solar cells High efficiency CPV power plants Contents

CESI CCTJ38%: Triple Junction Solar Cells InGaP/GaAs/Ge for CPV systems

• Polarity N on P
• Characterized for terrestrial applications under

concentrated illumination (up to 1000 suns)

• Front and back contacts based on gold coated

silver layers, weldable or solderable or bondable.

• Dimensions from 1 mm2 up to 2 cm2
• Customized dimensions available
• Thickness 170 μm ± 30 μm.
• Minimum average efficiency 37%
• Operating temperature < 100°C
• Maximum temperature < 350°C
• Meet ESA ECSS E20-08 standard for thermal

cycling and humidity.

• Reverse bias protection by external by-pass

diode

Substrate: P -Ge Emitter: N Contact Buffer: N-InGaAs Emitter: N+ -GaInP Window: N+ -AlInP Base: P -GaInP BSF: P+ -AlInGaP Grid TD: N++-InGaP TD: P++ -AlGaAs Window: N+ -AlGaAs Emitter: N+ -InGaAs Base: P-InGaAs Buffer: P+ -InGaP N+ -GaAs AR AR TD: N++-GaAs TD: P++ -AlGaAs Window: N+ -AlInP

Top cell Middle cell Bottom cell Top tunnel diode Bottom tunnel diode

CESI CCTJ38% PERFORMANCE DATA

37.2 0.85 32.0 3.14 12.11 1012 37.7 0.84 18.3 3.11 6.98 512 36.1 0.82 6.5 2.93 2.72 212

Eff (%) FF Pm (W/cm2) Voc (V) Jsc (A/cm2) Suns Typical I-V curve CCTJ-38% 500 suns 25° C

1 2 3 4 5 6 7 8 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 Voltage (V) Current (A/cm2) 2 4 6 8 10 12 14 16 18 20

Power (W/cm2)

Typical I-V curve CCTJ-38% 500 suns 25° C

1 2 3 4 5 6 7 8 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 Voltage (V) Current (A/cm2) 2 4 6 8 10 12 14 16 18 20

Power (W/cm2)

Average Electrical performances and temperature coefficients of CESI Solar Cells @AM1.5D, low AOD, T=25° ° ° °C Average Electrical performances and temperature coefficients of CESI Solar Cells @AM1.5D, low AOD, T=25° ° ° °C

• 0.05
• 3.99

6.9

Δη Δη Δη Δη/Δ Δ Δ ΔT

%abs/°C

Δ Δ Δ ΔVoc/Δ Δ Δ ΔT

mV/°C

Δ Δ Δ ΔJsc/Δ Δ Δ ΔT

μA/cm2/°C/sun

Temperature coefficients Electrical performances

Isc 6.952A Voc 3.108V Pm 18.472W FF 85.48 Eff 38.13%

The spectral Response Spectral response measurement:

• Known spectral reference
• EQE
• InGaP sub cell
• InGaAs sub cell

1 2 3 4 5 6 7 8 9 1 5 1 1 5 2

W a v e le n g th (n m ) External quantum efficiency (%)

G a A s In G a P G e 1 2 3 4 5 6 7 8 9 1 5 1 1 5 2

W a v e le n g th (n m ) External quantum efficiency (%)

G a A s In G a P G e

CESI Reference standards

Extensive testing* of CCTJ38% bare solar cells

• I-V characteristics as a function of

suns (1-1000 suns)

• Temperature coefficients from 20-

70° ° ° °C up to 100 suns

• Humidity and Temperature
• Peel test and Pull tests
• Thermal cycling
• Spectral Response
• Dark forward current up to 24

A/cm2 (2000 suns equivalent)

• Dark reverse bias screening
• Extended life (dark forward current

for 1000 h)

• Reference standards (Fraunhofer)

*based on IEC 62108 and ECSS E20-08

PV technology: from Space to Earth

CPV Technology

• It is a fallout of the space technology
• Triple Junction III-V solar cells
• High concentration factors are possible

(1000x, 2000x in the future)

• High conversion efficiency (40÷50)%

ALL COMPONENTS NEED QUALIFICATION! Needs in today’s world

• The Energy demand is increasing
• Diversification of energy sources
• Ease dependence from fossil fuels
• Exponential market growth
• Reduction of Plant’s Costs and land request
• High plant reliability

How CPV works

• Use of low cost Fresnel optics
• minimal reflection losses
• relatively high tolerance to alignment errors
• proven technology
• relatively high optical efficiency
• concentration factors > 1000x achievable
• Solar cell size reduction
• Less land usage to deploy CPV plants
• Better exploitation of the solar spectrum

Applicable Standards: ESA ECSS-E-20-08 & IEC-62108

ECSS Standards:

• widely accepted standards
• ESA, Nat’l Space Agencies
• EU Industry

Requirements:

• Qualification
• Procurement
• Storage
• delivery

Block diagram:

• PVA components
• Solar Cell Assemblies (CICs)
• Bare solar cell (dies)
• Coverglasses, Protection diodes ...

Existing standards for terrestrial PV:

• IEC-61215/IEC 61626 Crystalline silicon/thin film
• IEC-62108 CPV modules/ assemblies

CPV Cells Qualification sequence

Subgroups*:

• A:

Contact adherence

• B:

BOL performance

• O:

EOL performance

*A mix of ECSS E20-08 and IEC62108 standards

Visual Inspection and Dimensional check

Visual Inspection: PASS

• 10x magnification
• All visible defects are recorded
• The Defects may influence electric

performances >> REJECT CELL!

• Cosmetic defects, no influence on EP

>>PASS CELL Dimensional check: PASS

• dimensions, weight, thickness within

tolerances

BOL Electrical Performances

1-sun measurements

• Solar simulator (SS)
• Shunting effects may be present
• Parameters: Voc, Jsc, η

η η η 70-sun measurements

• SS + concentrating optics
• Shunt effects totally disappear
• efficiency > 30%

Thermal Coefficients Assessment of the solar cell temperature behavior

End of Life Assessment

Reverse bias operation:

• polarity reversed
• dark condition, 25°C, 1 s
• Vrev 2.5 V

Thermal cycling:

• Assess cell’s reliability
• Thermal shock!
• 100 cycles, -190 °C/+110 °C, 2 min

EOL assessment: Humidity and temperature

Quick test HT2:

• before contact adherence
• ARC stability
• Climatic chamber, ambient pressure, 24 ore
• Temperature(90±5) °C
• Relative Humidity (90±5)%

Standard qual test HT1:

• Long term storage simulation
• climatic chamber, ambient pressure, 30

days

• Temperature (60±5) °C
• Relative Humidity (90±5)%

Lifetime accelerated tests*

Aim:

• Cell’s life span assessment
• Cell stability at high concentration
• Temperature effects monitoring
• High current density degradation phenomena

Monitored Parameters:

• Fill Factor
• Efficiency

Method:

• Arrhenius law: 20 years in 827 hours

*Performed at CRP Amaro (UD)

Lifetime accelerated tests

Test conditions:

• Temperature T2: 140 °C
• Time t2: 792 h
• Ea: 0.75 eV, I: 145 mA
• T1: 70 °C

Estimated results: The simulation that was carried out corresponds to 58440 hours of operation. Assuming 8hr/day daily

• peration, this is equivalent to 20 years operation

CESI Road Map on CPV R&D

InGaP InGaAs Ge

Year 2010 2011 2013 2015

Average Efficiency 38% 40% 43% 46% Thickness (µm) 100-150 70-150 70-150 40-150 Production capacity

(MW @ 1000 suns)

15 30 50 100 (Al)InGaP InGaAs Ge (Al)InGaP InGaAs Ge (Al)InGaP (Al)InGaAs Si/Ge InGaP InGaAs

Efficiency (%)

Thickness & cost

Spectrum splitting or mechanical stacked

CESI: who are we? The photovoltaic conversion and the III-V compound semiconductors Solar Cell Manufacturing: MOCVD Solar Cell Manufacturing: Post growth CPV solar cells High efficiency CPV power plants Contents

Typical 1MWp Plant Figures

24%-28% Current efficiency AC >5,000 Wp Power per tracker Item Value Land Occupation 3.5-5 ha/MWp Ageing degradation (per year) 0.75%- 1% in line with Si Average performance ratio 0.8-0.9 in line with Si Target Yearly Yield (kWh/kWp) >1,300* * Target locations need to have very high DNI!

CPV Technical Benchmark with other PV Technologies

Technology Efficiency (module) Cost of Energy Total Costs *

Concentrated Photovoltaics (CPV) 25%- 28% 0.08-0.25 ($/kWh) 1.6-7.4 ($/W) Cristalline Silicon 14%- 20% Polycristalline Silicon 13%-15% Amorphous Silicon 6%-9% Cadmium Telluride 10%-14% Copper Indium (Gallium) Diselenide 10%-12% 0.10- 0.30 ($/kWh) 0.13- 0.35 ($/kWh) 2.1-7.0 ($/W) 3.0-8.0 ($/W) Source: R.M. Swanson, "The Promise of Concentrators," Prog. Photovolt. Res. Appl. 8, 93111, John Wiley & Sons Limited) Note: *Total costs including BOS costs

Medium size plants

CPV vs Si-Flat plate PV

Rubio et al. CPV-7 2011

CPV vs Si-Flat plate PV (II)

Rubio et al. CPV-7 2011

Efficiency balance on CPV systems based on III-V cells

• Cell Efficiency:

38-40%

• Transmission of optics:

80-85%

• Module interconnection:

95-97%

• Tracking:

95-98%

• Inverters:

95-97%

• System Efficiency:

24-28%

• Will CPV take off?

Will CPV take off?

Will CPV take off in Italy? >> SWOT Analysis*

Strength

The CPV technology is intimately connected to the National Industrial manufacture (Automotive, Electo-mechanical consumers goods, etc) CPV is a flexible technology assuring very high efficiency Rapid deployment/relatively low investments The CPV plants at their end of life can be fully recycled Several Italian academies/research organizations are strongly involved to CPV

* From F. Roca (ENEA)- Solar Expo 2011

Opportunities

Italian Companies usually focus on the added value

• ffered by the innovative transformation of primary
• sources. CPV can be considered among them.

CPV can offer large flexibility on the design of the PV-Systems CPV plant deployment on arid terrains may allow the recovery of the soil fertility

* From F. Roca (ENEA)- Solar Expo 2011

Will CPV take off in Italy? >> SWOT Analysis*

Weakness

Italian investors need to get in very short time the availability of proven and certified MW size plants Investors need PV-Systems having predictable behaviors and very high reliability. Reliability, maintenance of mechanical components and lens parquet/front window/mirrors cleaning continue to be open issues.

* F. Roca (ENEA)- Solar Expo 2011

Will CPV take off in Italy? >> SWOT Analysis*

Threat

The disruptive decrease of the conventional flat plate PV prices doesn’t make fruitful to invest on CPV Unavailability in short time (1 years) of low cost & reliable CPV technology

* F. Roca (ENEA)- Solar Expo 2011

Will CPV take off in Italy? >> SWOT Analysis*

Acknowledgements

CESI Solar cell production structure

• Dott. R. Campesato
• Dott. M. Casale
• Dott. G. Gori
• Ing. F. Bergamaschi
• Ing. E. Greco

Researchers at Centro Ricerche Plastoptica UD

• Dott. F. Roca ENEA

THANK YOU!