Fine-Pixel Detector FPIX Realizing Sub-micron Spatial Resolution - - PowerPoint PPT Presentation

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Fine-Pixel Detector FPIX Realizing Sub-micron Spatial Resolution - - PowerPoint PPT Presentation

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TIPP2017, Beijing Fine-Pixel Detector FPIX Realizing Sub-micron Spatial Resolution Developed Based on FD-SOI Technology D. Sekigawa, S. Endo, W. Aoyagi, K. Hara, S. Honda (U. Tsukuba) T . Tsuboyama, M. Yamada, S. Ono, Y . Ikegami, Y . Arai,

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SLIDE 1

Fine-Pixel Detector FPIX Realizing Sub-micron Spatial Resolution Developed Based

  • n FD-SOI Technology

Project supported by JSPS Grant-in-Aid for Scientific Research on Innovative Areas Japan/US Cooperation Program in the Field of High Energy Physics KEK Detector Technology Project

  • D. Sekigawa, S. Endo, W. Aoyagi, K. Hara, S. Honda (U. Tsukuba)

T . Tsuboyama, M. Yamada, S. Ono, Y . Ikegami, Y . Arai, I. Kurachi, T . Miyoshi, J. Haba, K. Hanagaki. M. Togawa (KEK) TIPP2017, Beijing

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SLIDE 2
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

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SOI PIXEL DEVICES

SOI: SILICON-ON-INSULATOR

  • Material budget
  • S/N
  • power dissipation
  • single event effects
  • latch up
  • Operation temp. (0.3K～570K)
  • speed
  • cost
  • Pixel size

CMOS circuitry fabricated on buried oxide(BOX) LAPIS 0.2um FD-SOI Features:

  • monolithic

(no metal bumps)

  • SOI-CMOS (FETs fully isolated)
  • Can choose* substrate of optimum

resistivity (fully depleted CMOS sensors possible) *SOITEC SmartCutTM

many excellent features

TID tolerance improved to 1MGy by introducing double SOI wafer

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SLIDE 3
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

3

3

FINE-PIXEL DETECTOR: FPIX2

I/O DECODER PIXEL

  • Pixel size: 8μm□
  • #Pixels: 128×128
  • Handle wafers:

>single SOI 25kΩ・cm p, 500 umt >double SOI 1kΩ・cm p, 300 umt

  • Rolling shutter RO

8 parallel outputs

chip layout (3mm-sq)

In Development:  to demonstrate excellent spatial resolution achievable with SOI technology (=>tracker for SOFIST TB)  as demonstrator of TID tolerance (FPIX2 equipped with three middle-SOI regions)

Courtesy of Lapis semiconductor

On-pixel circuit

TID: hole accumulation in BOX/GOX Middle-SOI: compensate TID effects by applied negative voltages

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SLIDE 4
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

4

FNAL TEST BEAM

FTBF: 120GeV protons from Main Injector

  • Trigger generated by a SEABAS2 board using Scint.(5mm-sq) and ATLAS

FE-I4 (2mmx1.75ｍｍ ROI)

  • Data of 4 FPIX2 and 2 SOFIST sensors acquired per TLU request.

All R/O boards (SEABAS2) implemented with same TimeStamp firmware

  • Last FPIX2 made accessible for exchanging to irradiated DSOI

scint. (view from downstream)

SEABAS2（Soi EvAluation BoArd with Sitcp): 16ch 12bit 40MHz ADCs, Giga-bit Ethernet 4.2s beam spill every 1 minute

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SLIDE 5
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

5

SINGLE/CLUSTER CHARGE

Q(ADC) of single pixel w/ max. in an event FPIX2 @-70V Max intensity 300 kWChits/spill

Intensity min 60 kWChits/spill

FPIX2 @-70V Qseed>200ADC FPIX2 @-9V Qseed>80ADC

Beam intensity effect is negligible intensity max 300 kWChits/spill

Qsum(7x7) vs ClusterSize(Qi>Qsum/49)

Define Qcluster=Qsum(5x5)

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SLIDE 6
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

6

100 36 140

Pedestal spread measured w/ beam 2.9±1.0 ADC (very uniform!)

BIAS DEPENDENCE

5x5 cluster charge [ADC] 5x5 cluster charge about the maximum charge pixel in an event VDET=4V VDET=140V

200 400 600 800 1000 1200 1400 1600

5 10 15

S/N~78

Landau Gauss Fit

Cluster Charge [ADU]

VDET= 70V Signal=1134±3ADC =14.5 ~400um/500 depleted

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SLIDE 7
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

7

100 200 300 400 500 600

5 10 15

irrad non irrad

100 200

FPIX2:DSOI 100KGY

5x5 cluster charge [ADC]

5x5 cluster charge about the maximum charge pixel in an event

Non-irrad (200V) VSOI2=0 100kGy (200V) VSOI2 : I/0=-4V , Pixel=-8V , Dec=-12V Innovative double-SOI allows operation

  • f SOI devices to 100kGy

Recent study extended to 1MGy ~150um/300 depleted

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SLIDE 8
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

8

Alignment&Cut

Hit position X2 [μm] Hit position X1 [μm]

TRACKING

VDET=70V #clusters/event in 2nd FPIX 300kWC/spill Troll shutter=1ms

Hit position X2 [μm] Hit position X1 [μm]

In Y In X Σ(hit residual)2 [μm2] ｃ 5 [μm2 ] ｃ

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SLIDE 9
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

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RESIDUALS

Residuals of DUT hit wrt the track reconstructed using other three FPIXs DUT= 1st FPIX2 DUT= 4th FPIX2

σ = 1.075 ± 0.009μm σ = 0.871 ± 0.008 μm

DUT= 2nd FPIX2

σ = 0.854 ± 0.008μm σ = 3.86 ± 0.09μm

DUT= 3rd FPIX2

in X

4

  • 4

[μm] 8

  • 8

4

  • 4

[μm] 8

  • 8

4

  • 4

[μm] 8

  • 8

4

  • 4

[μm] 8

  • 8
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SLIDE 10
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

10

RESIDUALS

Residuals of DUT hit wrt the track reconstructed using other three FPIXs DUT= 1st FPIX2 DUT= 4th FPIX2

σ = 0.875 ± 0.009μm σ = 0.720 ± 0.006 μm

DUT= 2nd FPIX2

σ = 0.815 ± 0.010μm σ = 3.84 ± 0.09μm

DUT= 3rd FPIX2

in Y

4

  • 4

[μm] 8

  • 8

4

  • 4

[μm] 8

  • 8

4

  • 4

[μm] 8

  • 8

4

  • 4

[μm] 8

  • 8
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SLIDE 11
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

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INTRINSIC SPATIAL RESOLUTION

under an assumption all four FPIXs have the same intrinsic resolution and contributions of misalignment/ multiple scattering are negligible (=conservative σtrack value ), we can calculate σint analytically Observed residual spread:

  • 1st : 1.075 ±0.009 μm 0.875 ±0.009 μm

2nd : 0.871 ±0.008 μm 0.720 ±0.006 μm 3rd : 0.854 ±0.008 μm 0.815 ±0.010 μm 4th : 3.86 ±0.09 μm 3.84 ±0.09 μm

  • 1st : 0.80 ±0.01 μm

0.65 ±0.01 μm 2nd : 0.71 ±0.01 μm 0.59 ±0.01 μm 3rd : 0.73 ±0.01 μm 0.70 ±0.01 μm 4th : 0.76 ±0.02 μm 0.76 ±0.02 μm in X in Y in X in Y Intrinsic resolution: 0.71~0.80 μm in X 0.59~0.76 μm in Y (effect of imperfect alignment included)

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SLIDE 12
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

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CHARGE SPREAD ABOUT PIX(QMAX)

2nd ~3rd >>1st in X 2nd >>1st ~3rd in Y Bias=700V 1st FPIX 2nd FPIX 3rd FPIX Resolution evaluated better in the order

Better resolution of 2nd Y could be explained by the beam injected at normal… Suspect X-talk in X for degraded resolution… under investigation

1st FPIX

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SLIDE 13
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

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0.0 0.5 1.0 1.5 2.0 10 100 1000

spatial resolution [um]

S/N

DEPFET 24um

COMPARISON TO PREVIOUS STUDIES

“Physical limitations to the spatial resolution

  • f solid-state detectors”, M. Boront et al.,

IEEE TNS 62-1, p381 (2015)

Fig.4 （1.4/24） d=450um

FPIX2: S~1000(70V)/N~3 … well in the saturated region

(0.71~0.80)/8 From X

From Y (0.59~0.76)/8 “a simple formula σ~p/(S/N) saturates due to δ electrons at higher S/N” Other device with ~1μm resolution 13.75um pixel (SOI) ⇒1.07±0.05 um M.Battaglia et al., NIMA676,50(2012)

FPIX2 achieved a sub-micron spatial resolution (1.07/13.75)

FPIX 8um

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SLIDE 14
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

14

CONCLUSION

 Performance of FPIXs of 8 μm pixel size has been evaluated successfully in 120 GeV test beam.  Intrinsic spatial resolution of 0.71~0.80 μm in X 0.59~0.76 μm in Y

  • btained (imperfect alignment may remain) by simple

charge-weighted mean hit position calculation method.  Silicon detector achieving sub-micron spatial resolution was possible with a 0.20 μm SOI technology.  SOI detector irradiated to 100 kGy showed no degradation in charge collection.

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SLIDE 15
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

15

SOFIST

SOFIST residual to FPIX track Bias=130V (~500um depletion) Readout: on-chip 8-b ADCs

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SLIDE 16
  • K. Hara, TIPP2017 May 22-26, 2017 BEIJING

16

ScanTime=280ns/pix 5mm 5mm

FTBF BEAM

Beam spot measured with FE-I4

Beam divergence

dx/dz dy/dz mrad mrad Beamline wirechamber 1mm bin