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Pixel Detector Module using MCM-D Technology for the B-layer of the ATLAS Pixel Detector DETECTOR CHIP Pixel 2000 Workshop BUMP ELECTRONIC CHIP Christian Grah grah@whep.uni-wuppertal.de University of Wuppertal www.atlas.uni-wuppertal.de

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SLIDE 1

Pixel 2000 Workshop

Christian Grah

grah@whep.uni-wuppertal.de

University of Wuppertal

www.atlas.uni-wuppertal.de

June 2000, Genova

  • O. Bäsken

K.H.Becks P.Gerlach

  • Ch. Grah

O.Ehrmann M.Töpper J.Wolf

DETECTOR CHIP ELECTRONIC CHIP BUMP

Pixel Detector Module using MCM-D Technology for the B-layer of the ATLAS Pixel Detector

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SLIDE 2 DETECTOR CHIP ELECTRONIC CHIP BUMP

2

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Overview

➤ The concept of building modules in MCM-D

technology

➤ MCM-D modules for the ATLAS Pixel Detector ➤ Measurements on Prototypes

➢ Lab measurements on full scale module and

single chip devices

➢ Testbeam measurements on single chip devices

➤ Conclusion and Outlook

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

ATLAS Pixel Detector

➤ 2200 modules ➤ 2.2 m2 active Si ➤ 1 x 108 channels

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

The basic structure of modules for the ATLAS Pixel Detector

➤ Sensor tile (16.4 mm x 60.4 mm active area)

Main components which need to be contacted:

➤

16 read out IC´s, each providing 18 x 160 pixel unit cells (preamplifier, discriminator, digital readout; pixel cell size: 400 x 50 µm2) 46080 connections in the pixel cell array per module with bump- bonding and flip-chipping as interconnection technique

➤

  • ne module controller chip

➤ Idea of using a Thin Film technology to perform the signal

interconnections and power distribution on the active sensor

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

MCM-D, a Thin Film Technology

➤ Up to 5 copper layers:

➢ magnetron sputtered

up to 2 µm Ti/Cu/Ti 10 mΩ/

➢ additive electroplating

up to 5 µm Ti/Cu

➤ Minimal width and spacing

10 and 20 µm

➤ Final metallisation:

➢ electroless ➢ 5µm Ni:P/ 200nm Au

➤ “Spin-on” polymer: BCB

(Benzocyclobutene / DOW:CYCLOTENE™)

➤ Photosensitive ➤ Specific dielectric constant

εr= 2.7

➤ Process temperatures :

1h 220°C per layer last layer 1h 250 °C

➤ Thickness / layer 4 - 10 µm ➤ Via ∅ ∅ ∅ ∅ >20 µm, Pad 30µm

conductor layers dielectric layers

Multi Chip Module Deposited

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SLIDE 6 DETECTOR CHIP ELECTRONIC CHIP BUMP

6

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

MCM-D Module

24,4 mm with 3 optical fibres Opto Package (VCSEL & PIN diode) DORICp VDCp Connections to 78,6 mm Sensor

  • uter world

Module Controller Chip

Pixeldetector Module

Temperature Sensor 16 Frontend Readout Chips

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SLIDE 7 DETECTOR CHIP ELECTRONIC CHIP BUMP

7

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Advantages of modules in MCM-D technology

➤ A robust, “easy-to-handle” module with

bump-bonding as the only interconnection technique

➤ Signal lines in µ-strip configuration, so

with low crosstalk and well defined impedance

➤ Allows routing in the pixel cell array to

contact sensor and electronic cells which are not facing each other

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SLIDE 8 DETECTOR CHIP ELECTRONIC CHIP BUMP

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Schematic Cross-Section of a Bus System

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SLIDE 9 DETECTOR CHIP ELECTRONIC CHIP BUMP

9

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Some pictures of the MCM-D structures

Feed-throughs signal bus power contact 50 µm

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SLIDE 10 DETECTOR CHIP ELECTRONIC CHIP BUMP

10

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Feasibility Studies

10

➤ Just two

exemplary plots

➤ The sensor

properties are not affected by the MCM-D technology

  • 260 -240 -220 -200 -180 -160 -140 -120 -100 -80
  • 60
  • 40
  • 20

20

  • 13
  • 12
  • 11
  • 10
  • 9
  • 8
  • 7
  • 6
  • 5
  • 4
  • 3
  • 2
  • 1

1

IZM01 t1 -01 IZM09 t1 -01 IZM01 t1 -01 (after processing) IZM09 t1 -01 (after processing)

Current [µA] Voltage [V]

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SLIDE 11 DETECTOR CHIP ELECTRONIC CHIP BUMP

11

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Yield Test - Thin Film

Feed-through structures

➤ Daisy-Chain interconnection ➤ Four copper layers ➤ 1.1 .106 monitored vias with a

diameter of 25µm

➤ Measured defect rate

8.13 .10-6

(9 defects of 1 105 920 vias)

➤ We expect 1.5 unconnected

pixel/module

BCB etched for better visualisation

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SLIDE 12 DETECTOR CHIP ELECTRONIC CHIP BUMP

12

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Full Scale Prototype Module

Frontend Chips Additional test pads

contacted by wire bonding

MCC

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SLIDE 13 DETECTOR CHIP ELECTRONIC CHIP BUMP

13

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Threshold and Noise (Untuned Full Scale Module)

The MCM-D Module shows encouraging performance regarding Threshold distribution and Noise performance

Module: MCM-D T1/Frontend B

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14

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Single Chip Module

Sensor cell array + MCM-D interconnections + Frontend chip

➤ Investigation of different

Feed-through layouts, especially routing

A Single Chip Module consists of:

Picture: Frontend C on Single Chip PCB

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SLIDE 15 DETECTOR CHIP ELECTRONIC CHIP BUMP

15

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Feed-throughs in different layouts

Class U (most common class) Class R1 (to neighbouring pixel cell) Class R2 (skipping one cell) Class R3 (skipping two cells) Class U400/600 (two columns at the border of the hybrid)

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16

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Threshold distribution (Single Chip)

Hybrid: MCM-D ST1/Frontend C

320 640 960 1280 1600 1920 2240 2560 2880 400 800 1200 1600 2000

standard settings: all TDAC´s = 4 threshold adjusted to 825 [e

  • ]

Threshold [e

  • ]

Pixel number

400 600 800 1000 1200 1400 1600 100 200 300 400 not adjusted threshold: mean value: 825 [e

  • ]

standard deviation: 225 [e

  • ]

adjusted threshold: mean value: 825 [e

  • ]

standard deviation: 45 [e

  • ]

Threshold [e

  • ]

entries/bin

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17

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Noise distribution (Single Chip)

Hybrid: MCM-D ST1/Frontend C

20 40 60 80 100 120 140 160 180 200 100 200 300 400 500 600

mean value: 86 [e

  • ]

standard deviation: 11 [e

  • ]

Noise [e

  • ]

entries/bin 320 640 960 1280 1600 1920 2240 2560 2880 50 100 150 200 250 300 350

Noise [e

  • ]

Pixel number

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Summary of Noise measurements

hy brid MCMD FeC- St 1 MCMD FeC- St 2 c lass U4 0 0 79 ± 10 130 ± 12 U6 0 0 88 ± 12

n/ a

U 80 ± 10 126 ± 12 R1 93 ± 10 136 ± 12 R2 96 ± 8 142 ± 13 R3 94 ± 8 151 ± 15 mean v alue ± st andard dev iat ion [ e - ]

There is no influence on the performance, due to Feed-throughs in MCM-D. As expected, the crossing of copper lines in different layers (classes Ri) increases the Noise, due to the higher interpixel capacitance.

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Crosstalk Measurements

Pixel N (masked to read out) Pixel N+1 (with threshold T) For Pixel N+i similar Crosstalk = T / Q

Q

hits Crosstalk = fraction of charge that couples into the neighbouring pixel through the interpixel capacitance

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20

Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Crosstalk distribution (Single Chip)

320 640 960 1280 1600 1920 2240 2560 2880 5 10 15 20 25

to neighbouring pixel skipping one pixel skipping two pixel Crosstalk [%] Pixel number

Ri

U600

“ganged” Pixel: These electronic cells are connected to two sensor cells (by design).

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Summary of crosstalk measurements

hy brid t o pixel N + 1 N + 2 N + 3 N + 1 N + 2 N + 3 c lass U4 0 0 6, 9 ± 0,3 2, 6 ± 0, 2 < 1 2,8 ± 0, 8 1, 6 ± 0,4 1, 1 ± 0, 2 U6 0 0 8 ,6 ± 0 ,5 3 ,9 ± 0 ,2 < 1

n/ a n/ a n/ a

U 7 ,0 ± 0 ,3 2 ,5 ± 0 ,1 < 1 3 ,0 ± 0 ,7 1 ,3 ± 0 ,3 < 1 R1 8 ,2 ± 0 ,5 2 ,7 ± 0 ,1 < 1 4,6 ± 0, 9 1, 6 ± 0,3 < 1 R2 8 ,9 ± 0 ,5 4 ,3 ± 0 ,2 < 1 5,1 ± 1, 1 2, 4 ± 0,4 < 1 R3 8, 6 ± 0,4 5, 7 ± 0, 2 2,8 ± 0, 1 5,0 ± 0, 8 3, 7 ± 0,5 2, 0 ± 0, 3 FeC- St 1 FeC- St 2 mean v alue ± st andard dev iat ion [ % ]

Note 1: There is no influence on the crosstalk, due to the Feed-throughs in MCM-D. Note 2: The performance of class R1 and R2 layouts is comparable to the 600µm long sensor cells (U600).

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Source measurement

Am241: Gamma-rays

nr of hits Upper 3 cells not connected (by design)

The MCM-D hybrid shows a uniform functionality. Defects were recognized as bad bump connections.

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Testbeam data

➤ H8 Testbeam at SPS

(CERN)

➢ primary: 450 GeV

protons

➤ Data was mainly taken

with: 180 GeV pions

➤ Telescope with 4 layers of

strip-detectors (Resolution: 3 µm)

H8 Telescope system

All presented measurements: (MCM-D) SSG/Frontend B

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Reconstructed energy deposition

250 500 750 1000 1250 1500 1750 2000 10 20 30 40 50 60 70 80 90 100 pulseheight (Ke) 1000 2000 3000 4000 5000 6000 20 40 60 80 100 MCM-D pulseheight (Ke-)

No charge loss can be seen, due to the MCM-D structures

Single hit events Double hit events (added charges)

Conventional hybrid MCM-D hybrid

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Single hit resolution

resolution: single hits 58.66 / 53 P1 0.2662E-03 P2 0.5272E-02 P3 0.1938E-01 P4 21.49

100 200 300 400 500 600

  • 0.1
  • 0.05

0.05 0.1

MCM-D resolution: single hits

69.20 / 51 P1

  • 0.5997E-04

P2 0.5274E-02 P3 0.1880E-01 P4 39.12

200 400 600 800 1000

  • 0.1
  • 0.08
  • 0.06
  • 0.04
  • 0.02

0.02 0.04 0.06 0.08 0.1

Conventional hybrid MCM-D hybrid

Difference between predicted (Telescope) and measured particle track P2: sigma of gaussian tail P3: width of plateau

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Double hit resolution

resolution: double hits analog

80.18 / 35 Constant 516.7 Mean

  • 0.2504E-03

Sigma 0.5269E-02

100 200 300 400 500

  • 0.1
  • 0.05

0.05 0.1 MCM-D resolution: double hits analog

171.9 / 57 Constant 1109. Mean 0.1694E-03 Sigma 0.5137E-02

200 400 600 800 1000 1200

  • 0.1
  • 0.05

0.05 0.1

Conventional hybrid MCM-D hybrid

Double hit resolution: 5µm (conventional and MCM-D hybrids)

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Multi Chip Module-Deposited Conclusion

➤ It is possible to build “easy-to-handle” Pixel Detector Modules

with the MCM-D technique.

➤ The Sensor is not harmed / damaged by the processing. ➤ The signal and power distribution structures are able to drive full

modules.

➤ No problems appeared due to the necessary connections

between electronic and sensor cells. Outlook:

➤ Explore the full potential of the MCM-D technique, modules with

a homogeneous resolution may be build.

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Pixel 2000, Genova

Ch.Grah

University of Wuppertal

Further possibilities of the MCM-D technology

The possibility of integrating passive components in MCM-D is under investigation. R and C: Currently possible (due to the high process temperature this is not (yet) possible for our application!):

  • 720 pF/mm2 with Ta2O5 as dielectric
  • 10-100 Ω/ with TaN as resistor material

Inductor in MCM-D Technology