EE619 ZELE LECTURE 1 SLIDES 4JAN2019 James Clerk Maxwell Rajesh - - PowerPoint PPT Presentation

Rajesh Zele

EE619 – ZELE – LECTURE 1 – SLIDES 4JAN2019

Slide 1

James Clerk Maxwell

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source: wikipedia

Slide 2

Heinrich Hertz

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source: wikipedia

Slide 3

Jagadish Chandra Bose

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Point contact diodes – JC Bose

Slide 4

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source: wikipedia

Slide 5

Guglielmo Giovanni Maria Marconi

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Attenuation vs frequency

Slide 6

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Why RF?

 RF / Wireless

 Transfer of information from one point to another without any physical medium

 RF propagation

 Power radiated is inversely proportional to (frequency)2 and (distance) 2  Longer wavelength (low frequency) signals travel greater distance and

penetrate through objects better

 Antenna size is proportional to wavelength (1/frequency)

Slide 7

Frequency Wavelength Antenna Size 900 Mhz 33.33 cm 16.67 cm 2.4 Ghz 12.5 cm 6.25 cm 60 Ghz 5 mm 2.5 mm

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Basic RF circuit functions

 Objective

 amplify only the desired signal  in presence of the device/ambient noise  in presence of the strong undesired signals  condition the signal for digital processing  reliable over process, temperature, voltage variations

Slide 8

Frequency Signal Strength Desired Signal

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RF transceiver architecture – Direct Conversion

Slide 9

Technology Trends

Slide 10

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Number of devices in the Internet of Everything

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Trends in Wireless Networks

Slide 12

Smith et. al. Solid-state circuits magazine 2012

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Technology Trends

Slide 13

Tech Trends ISSCC 2011 Body Area Network: Next Gen Healthcare BCC: Human Body as Transmission medium

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Technology Trends – wired and wireless data-rates over time

Slide 14

Tech Trends ISSCC 2015

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Summary – Technology Trends

 Radios coming closer to Human body (inside?)  Drive towards – Low power short range transceivers  60 GHz Radios – High bandwidth & Smaller antennas  Wireline 100 Gbps to support big data  Optical networking  Software defined radios ?  Full spectrum capture Radios

All this with nm CMOS Technology

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CMOS Technology and Supply voltage scaling

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Driven by Digital to pack more functionality per sqmm. Supply voltage reduced for various junction breakdown.

C-H Jan, IEDM 2010)

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Parameter Scaling Factor L, W, Tox 1/S Voltage S Electric Field 1 Doping Conc. S Current 1/S Gate Delay 1/S Power 1/S2

CMOS Technology scaling

 Constant Field scaling (Dennard 1974)  Each generation of CMOS scales with  Example: 90nm, 65nm, 45nm, 28nm CMOS technologies  Huge performance improvements for Digital circuits

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0.7X

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Scaling Impact on Analog circuits



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ft scaling trend

Slide 19

C-H Jan, IEDM 2010)

 Higher ft – higher frequency circuit operation

 mm-Wave 60 GHz now possible in CMOS  High frequency converters with better resolution  Full spectrum capture possible!

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Integration Trends in Wireless Transceivers

Slide 20

Tech Trends ISSCC 2015

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• G. Chien, F. Weishi, Y.A. Hsu, and L. Tse. A 2.4ghz cmos transceiver and baseband

processor chipset for 802.11b wireless lan application ISSCC, 2003

Slide 21

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B.-E. Kim et al.A 9dbm iip3 direct-conversion satellite broadband tuner-demodulator SOC. ISSCC, 2003

Slide 22

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A Single-Chip CMOS Bluetooth v2.1 Radio SoC

• W. W. Si et al., "A Single-Chip CMOS Bluetooth v2.1 Radio SoC," in IEEE Journal of Solid-State Circuits, vol. 43, no. 12, pp.

2896-2904, Dec. 2008. doi: 10.1109/JSSC.2008.2005741

Slide 23

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State-of-Art RFIC – Trends and Challenges

 Moving up to 60 Ghz

 Lumped vs. distributed behavior  EM simulations

 Multimode radios

 Diversity  Multiple front ends on the chip  Multiple VCOs – Frequency planning important

 SOC challenges

 Sensitive RF circuits on the noisy digital substrate  Substrate noise coupling and crosstalk  Magnetic coupling between on-chip spiral inductors.  Spurs

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Beyond IC design

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Package Modeling, Chip Pinouts, Coupling between different bond-wires, Board layout, Component models MUST be part of design flow.

• J. Long – ISSCC 05