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See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/336990635 Eight-Octave Low Noise Optical Receiver Utilizing Distributed Amplification: slides Presentation September 1997 DOI:

slide-1
SLIDE 1

See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/336990635

Eight-Octave Low Noise Optical Receiver Utilizing Distributed Amplification: slides

Presentation · September 1997

DOI: 10.13140/RG.2.2.22977.51049

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SLIDE 2

EIGHT-OCTAVE LOW NOISE OPTICAL RECEIVER UTILIZING DISTRIBUTED AMPLIFICATION

* BME-MHT, Technical University of Budapest, Dept. of Microwave Telecommunications H-1111 Budapest, Goldmann György-tér 3, Hungary, tel.: (+36 1) 463 41 42, fax : (+36 1) 463 32 89, e-mail : zolomy @ nov.mht.bme.hu

§ TKI Rt., Innovation Company for Telecommunications

H-1142 Budapest, Ungvár u. 64-66, Hungary

# Brunel University,

Uxbridge, Middlesex UB8 3PH, United Kingdom ° LEMO-ENSERG-INPG, Institut National Polytechnique de Grenoble 23 Rue des Martyrs, BP 257, F-38016 Grenoble, Cedex 1, France

A.Zólomy*, T.Berceli*§, A.Hilt*§°, G.Járó*, C.S.Aitchison#, A.Baranyi§, J.Ladvánszky§, P.Y.Liang#

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 1/11

slide-3
SLIDE 3

CHARACTERIZATION OF THE PIN PHOTODIODE

Opto Speed pin PD94CP-S12AR1300 chip with tapered coplanar line

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 2/11

0.15 5.1 1 10.08 15.04 20.00

  • 1
  • 2.5
  • 5
  • 8
  • 50
  • 45
  • 40
  • 35
  • 30
  • 25
  • 20
  • 15
  • 10
  • 5
  • FREQ. [GHZ]

R [dB(A/W)]

  • 10 - -5
  • 15 - -10
  • 20 - -15
  • 25 - -20
  • 30 - -25
  • 35 - -30
  • 40 - -35
  • 45 - -40
  • 50 - -45

Optical response of the Opto Speed pin PD as a function of frequency and bias, measured using a coplanar probe Vbias[V]

slide-4
SLIDE 4

0,15 5,11 10,08 15,04 20,00

  • 0,5
  • 1
  • 1,5
  • 2
  • 3
  • 5
  • 7
  • 10
  • 20
  • 15
  • 10
  • 5
  • FREQ. [GHZ]

Vbias[V] G

EL [dB]

  • 5 - 0
  • 10 - -5
  • 15 - -10
  • 20 - -15

Reflection of the bonded diode at different bias voltages

0.15 4.12 8.09 12.06 16.03 20.00

  • 2
  • 3
  • 4
  • 5
  • 7
  • 9
  • 60
  • 50
  • 40
  • 30
  • 20
  • 10
  • FREQ. [GHZ]
  • 10 - 0
  • 20 - -10
  • 30 - -20
  • 40 - -30
  • 50 - -40
  • 60 - -50

R [dB(A/W)]

RESPONSIVITY AND ELECTRICAL REFLECTION OF THE BONDED DIODE

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 3/11 Vbias[V]

Responsivity of the bonded diode at different bias voltages

slide-5
SLIDE 5

PIN PHOTODIODE MODEL

0 ° 30 ° 60 ° 120 ° 150 ° 180 ° 210 ° 240 ° 300 ° 330 ° (r = 1.00) Modeled Measured

Equivalent circuit of the pin PD Measured and the modeled reflection of the chip MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 4/11 C1 = 144fF

Ls= 77pH

pin diode coplanar line C2= 305fF R2= 2.533kW R1= 77W Rs= 10.3W Cj= 127fF Rj= 8MW 100 200 300 400 500 600 700 800

  • 10
  • 8
  • 6
  • 4
  • 2

Vext [V] Cj [fF] Pm=300 uW Ph=150 uW P0=0 uW Variation of the PD capacitance vs. bias voltage

slide-6
SLIDE 6

LOW NOISE DISTRIBUTED AMPLIFIER DESIGN

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 5/11

Frequency (GHz) Noise Figure (dB) 2 0.17 4 0.33 6 0.50 8 0.67 10 0.83

Noise figure of the used low noise ATF35376 PHEMT from HP

( )

( )

A L C Ng e

V b m c c jN b

     = − −

−

1 2 1 1

2 2 2 2 1 2

/ /

( )

b

c

arctg LC = −         2 2 1

1 2

   / The bandwidth is determined by the gate source capacitance and the series parasitic inductance

( )

c

g

C L L

1

2 4 = +

c

g

CL

2

1 = Substituting C=Cgs

L Z C =

2

L=0.7 nH c1 = 7.5E+11 fc=11.95 GHz Voltage gain of the DA with parasitic inductances phase shift

Rg=0.3 Ohm GATE Lg=0.45 nH Rg=2 Ohm Cgs=0.284 pF Cds=0.16 pF Rds=157 Ohm 10 ps 57 mS Ld=0.33 nH Cgd=0.036 pF DRAIN SOURCE

Transistor small signal equivalent circuit N is the number of stages

slide-7
SLIDE 7

DESIGN AND EXPERIMENTAL RESULTS OF THE AMPLIFIER

1 2 3 4 5 6 7 8 9 10 0.5 2.5 4.5 6.5 8.5 10.5 12.5

  • 15
  • 10
  • 5

5 10 15 2 4 6 8 10 12

  • freq. [GHz]

S 21 [dB]

Measured gain Measured noise figure MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 6/11

HEMT model HEMT model L=1 mm W=0.653 mm L=4.6 mm W=1.63 mm L=10.45 mm W=1.83 mm

IN 50 Ohm

W=0.2 mm L=9.2 mm W=1.04 mm L=4.6 mm W=1.49 mm L=14.28 mm

OUT 50 Ohm

L=8.4 mm W=0.51 mm L=8.4 mm W=0.51 mm Duroid 5880 r=2.2 COND=4.1E7 ROUGH=20 um TAND=0.0009 HU=10 mm T=35u H=0.508mm

220 Ohm 1 kOhm 50 Ohm bypass capacitor metal island for grounding HEMT

The second step is the design of a simplified amplifier structure by computer optimization Finally the layout is constructed by considering the parasitics and discontinuities step by step

  • freq. [GHz]
slide-8
SLIDE 8

PHOTODIODE-AMPLIFIER CONNECTION POSSIBILITIES

DA VOut IIn Cj=0.5pF 50W

a.)

DA VOut LB=0.667 nH 50W IIn Cj=0.5pF

b.)

IIn Ls1=0.297 nH Ls2=0.323 nH Cj=0.5 pF DA VOut 50W 50W

c.)

IIn Ls1=1.279 nH Ls2=0.63 nH Cp=0.5 pF DA VOut 50W

d.)

Different matching circuits

2 4 6 8 10 34 36 38 40 42 44 [dB W] frequency [GHz] case d.) case c.) case a.) case b.)

Comparison of transfer impedance

frequency [GHz] 2 4 6 8 10 10 20 30 40 case d.) case c.) case a.) case b.)

Equivalent input noise current density

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 7/11

pA Hz /

slide-9
SLIDE 9

DESIGN AND CONSTRUCTION OF THE PHOTORECEIVER

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 8/11

Cu box PIN diode Gold coated brass plate Duroid Substrate Amplifier input line Resistor of the pin diode bias circuit DC Blocking Capacitor Second bonding wires Alumina Substrate

simulated responsivity of the photoreceiver with inductive matching (case b).

1 10 10 dB

  • Freq. (GHz)

simulated output reflection of the PR with inductive matching (case b)

  • 4
  • 24

10 1 dB

  • Freq. (GHz)

Connection

  • f the PIN

diode to the amplifier

slide-10
SLIDE 10

MEASURED OPTICAL RESPONSE OF THE PHOTORECEIVER

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 9/11

  • 20
  • 10

10 20 2 4 6 8 10 12 14 frequency [GHz] [dB(A/W)] photodetector

  • ptical receiver

Measured responsivity of a photoreceiver with PD matched to 50W and the two-stage DA Measured responsivity of the photoreceiver with inductive matching

  • 20
  • 15
  • 10
  • 5

5 10 15 20 2 4 6 8 10 12 frequency [GHz] R[dB(A/W)]

slide-11
SLIDE 11

NOISE MEASUREMENTS

PD PD-DA NOISE

5 10 15 20 25 30 35 3 4 5 6 7 8 9

FREQUENC NCY (GHZ)

GA(f ) @ 70 dB Spectrum Analyzer

NOISE MEASUREMENT SETUP

( )

( )

( )

V f R P P f G f i R

PRout meas PR meas RBW A 2 50 50 2 2

4 = − +

, , W

V R

PRout 2

4

Pmeas PR

,

Pmeas,50W

fRBW

( )

i f V Z Hz

eqPRin PRout tr 2 2 2

= [pA / ]

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 10/11 R0= 50 W reference noise source (T0=290K)

measured equivalent input noise current density calculation of the input equivalent noise current density

i R

50 2 2

4

PD+DA

Ztr

slide-12
SLIDE 12

MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 11/11

REFERENCES

[1] Colin S.Aitchison : “The Intrinsic Noise Figure of the MESFET Distributed Amplifier”, IEEE

  • Trans. on Microwave Theory and Techniques, vol. 33, pp. 460-466, June 1985.

[2] Colin S.Aitchison : “The Predicted Signal to Noise Performance of a Photodiode Distributed Amplifier Optical Detector”, IEEE MTT-S Digest, Vol. 2, 1992. [3] Thomas T.Y.Wong : “Fundamentals of Distributed Amplification”, Artech House, Boston, London, 1993. [4] A.Zólomy, G.Járó, A.Hilt, A.Baranyi, J.Ladvánszky : “Wideband Distributed Amplifier Using Encapsulated HEMTs”, NATO Advanced Research Workshop Sozopol, Bulgaria, September, NATO ASI Series, 3-Vol.33, pp. 315-320, Kluwer Academic Publishers, Dordrecht, Boston, London. [5] A.Zólomy, A.Hilt, A.Baranyi , G.Járó: “Microwave Distributed Amplifiers in Hybrid Integrated Technology”, Proc. of the 1997 European Conference on Circuit Theory and Design, pp. 1374-1377, Budapest, Hungary, September, 1997. [6] G.Járó ,T.Berceli, A.Hilt, A.Zólomy : “Gain and Noise Optimization of an Optical Receiver Utilizing a Distributed Amplifier”, Proc. of the 1997 European Conference on Circuit Theory and Design, pp. 1356-1359, Budapest, Hungary, September, 1997. [7] A.Hilt, G.Járó, A.Zólomy, B.Cabon, T.Berceli, T.Marozsák : “Microwave Characterization of High Speed pin Photodiodes”, Proc. of the COMITE’97, 9th Conference on Microwave Techniques, Pardubice, Czech Republic, October 1997.

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