E-Beam Lithography Stencil Planning and Optimization With Overlapped Characters
Kun Yuan, David Z. Pan
- Dept. of Electrical and Computer Engineering
The University of Texas at Austin http://www.cerc.utexas.edu/utda
E-Beam Lithography Stencil Planning and Optimization With Overlapped - - PowerPoint PPT Presentation
E-Beam Lithography Stencil Planning and Optimization With Overlapped Characters Kun Yuan, David Z. Pan Dept. of Electrical and Computer Engineering The University of Texas at Austin http://www.cerc.utexas.edu/utda Outline t Introduction and
Kun Yuan, David Z. Pan
The University of Texas at Austin http://www.cerc.utexas.edu/utda
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t Introduction and Motivation
› Electronic Beam Lithography (EBL) › Overlapped Characters
t EBL Stencil Planning/Optimization
› One-Dimensional Stencil Design › Two-Dimensional Stencil Design
t Experimental Results t Conclusion
Light source Wafer masks Illumination Lens Projection Lens
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t Aggressive scaling of min. printable half pitch 1
k1: process difficulty NA: numerical aperture λ: wavelength of source t λ is stuck at 193nm t EUV (13.5nm): Still many, many
challenges!
[Smayling+, SPIE 2008]
t k1: limit is 0.25
t NA = 1.5, close to the limit
Mask 2 Mask 1
Alternative solution for 32nm/22nm and below But mask cost will be proportionally higher! Double Patterning Or even triple/quadruple patterning!
Electron Gun Shaping aperture
t Maskless technology, which shoots desired
patterns directly into the silicon wafer
› 4x better resolution [Solid State Technology 2011] › Lower cost [D2S Inc]
The biggest challenge: Low throughput
t One rectangle per shot
Total number of 11 shots are needed
Electron Gun Shaping aperture Electron Gun Shaping aperture
Character Projection (CP) Technology
t Print some complex shapes in one electronic beam
shot, rather than writing multiple rectangles.
Electron Gun Wafer Stencil Shaping aperture
Character
Character Projection Technology (Cont.)
Electron Gun Wafer Stencil Shaping aperture Electron Gun Wafer Stencil Shaping aperture Electron Gun Wafer Stencil Shaping aperture
Only three shots are needed
t The number of characters is limited due to the
area constraints of the stencil
› Various investigations [Makoto et al. SPIE’06, SPIE’09] on optimization of character selection Character
Layout A Character A Blank A
Spanned region
from shaping aperture
Layout B Blank B Character B
t Blanking space is usually reserved around its enclosed
rectangular circuit pattern
t By allowing over-lapping adjacent characters, more
characters may be put on stencil [Fujimura+, 2010]
Layout A Layout B Character A Character B Min(BlankA, BlankB) Layout A Layout B Character A Character B BlankA BlankB
A B C
Stencil Character Candidates to be Considered
A B C A B C
Out of Stencil
Order Matters
VSB i
C
i
i
j
b
min( , )
V ij i j
b =
i
j
H ij i j
t Given a set of character candidates
Each candidate appears in the circuit
CP i
i
#shots by VSB: #shots by CP:
CP
C
\
i CP i C CP
CP VSB i i i i C C C C C
∈ ∈
A B C
t Select a subset out of character
candidates , and place them on the stencil S
While The placement of is bounded by the outline of stencil.
CP
Stencil
t The required blanking spaces on the top t and
bottom b are nearly identical for all the candidates.
i
i
j
b
j
=
=
1 1
2 1
3 1
1 2
3 2
3 2
One-Dimensional Bin Packing Multi Row Swapping Inter-Stencil Tuning Single Row Reordering Result Improved
Yes End No
\
i CP i C CP i C i CP
CP VSB i i i i C C C C C VSB VSB CP i i i i i C C C C
∈ ∈ ∈ ∈
Constant Packing by the decreasing order of
( )
i CP
VSB CP i i i C C
r n n
∈
−
…. ….
B A R1 R2 C
W
…. ….
B A R1 R2 C Put C here?
…. ….
B A R1 R2 C C S1 S2 <
Put the candidate into the row with most blacking space left Minimize Maximize
t Adjust the relative locations of already-placed
characters in each row to shrink its occupied width and increase remaining capacity
A B C
A B C
Out of Stencil r A
v
r B
v
r C
v
H H big ji
H H big ij
A B C
r A
v
r B
v
r C
v
t Transform to min-cost Hamiltonian path problem
Multi-Row Swapping and Inter-Stencil Tuning
1 1
2 1
3 1
1 2
2 2
3 2
Bigger
R1 R2
1 1
2 1
3 1
1 2
2 2
3 2
Smaller
R1 R2
t Multi-Row Swapping t Inter-Stencil Tuning
› Exchange the placed characters with those which have not been selected
1
n
t The blanking spaces of templates are non-
uniform along both horizontal and vertical directions.
t Simulated Annealing Framework with Sequential
Pair Representation (... ... ...), =(... ... ...). c is left to c (... ... ...), =(... ... ...). c is below c
i j i j i j j i i j i j
X c c Y c c X c c Y c c = =
t Transform SP to a min-area packing solution t Pick the candidates within outline of stencil as
characters
A(3) B(2) C(1) D(2)
( ) ( ) X E D A C B Y A B D E C = =
E(2) A(3) B(2) C(1) D(2)
( ) ( ) X E D A C B Y A B D E C = =
E(2)
t Try to reduce the projection time by swapping
the positions of two candidates in the X &Y SP.
A(3) B(2) C(1) D(2)
( ) ( ) X E D A C B Y A B D E C = =
E(2) A(3) B(2) C(1) D(2) E(2)
( ) ( ) X C D A E B Y A B D C E = =
Stencil Swap C and E
t Make use of the concept of slack to find a good
position to insert extra candidate into the stencil
A B A B
left C
right C
slack right left C C C
D D C C
t Make use of the concept of slack to find a good
position to insert extra candidate into the stencil
A B D C
( ) ( ) X E C A D B Y A E C B D = =
E A B C
( ) ( ) X C A D B E Y A C B D E = =
E D
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t Implemented in C++ t Intel 8 Core Linux, 3.0 Ghz, 32GB t Parquet [TVLSI 2003] is adopted as
t Compare with two baseline methods
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Circuit Character Size
Total area
Total blanks Optimal area 1D-1 3.8x3.8 1.444 0.416 1.028 1D-2 4.0x4.0 1.6 0.479 1.121 1D-3 4.2x4.2 1.764 0.514 1.25 1D-4 4.4x4.4 1.936 0.569 1.367 2D-1 3.8x3.8 1.444 0.414 1.03 2D-2 4.0x4.0 1.6 0.529 1.071 2D-3 4.2x4.2 1.764 0.662 1.102 2D-4 4.4x4.4 1.936 0.774 1.162
4 2
4 2
4 2
The area of stencil is 100
1000 character candidates
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10000 20000 30000 40000 50000 1D-1 1D-2 1D-3 1D-4
#shots (projection time)
NON-OVERLAP GREEDY PROPOSED 200 400 600 800 1000 1D-1 1D-2 1D-3 1D-4
#characters on stencil
NON-OVERLAP GREEDY PROPOSED 0.1 1 10 100 1D-1 1D-2 1D-3 1D-4
#CPU(logscale)
NON-OVERLAP GREEDY PROPOSED
t 51%, 14% reduction on shot
number over previous ILP-based approach without overlapping characters and greedy algorithm.
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t 31%, 25% reduction on shot
number over previous ILP-based approach without overlapping characters and greedy algorithm.
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t E-Beam Lithography is a promising emerging
technology for better resolution and lower cost
t Low throughput is its key hurdle t E-beam lithography stencil planning and
t Lots of future research opportunities on physical
design and emerging lithography
› E-beam multi-stencil optimization problems › Massive parallel e-beams/characters › Double/triple patterning lithography › EUV, ……
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t The work is sponsored in Part by NSF, IBM
Faculty Award and equipment donations from Intel
t Dr. Gi-Joon Nam at IBM Austin Research Lab for
helpful discussions.