CMS Strip Readout Architecture for SLHC OUTLINE brief review of LHC - - PowerPoint PPT Presentation

cms strip readout architecture for slhc
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CMS Strip Readout Architecture for SLHC OUTLINE brief review of LHC - - PowerPoint PPT Presentation

CMS Strip Readout Architecture for SLHC OUTLINE brief review of LHC strip readout architecture p proposed architecture for SLHC front end amplifier design in 130nm system architecture ideas system architecture ideas triggering possibilities


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SLIDE 1

CMS Strip Readout Architecture for SLHC

OUTLINE brief review of LHC strip readout architecture p proposed architecture for SLHC front end amplifier design in 130nm system architecture ideas system architecture ideas triggering possibilities with strips summary

Mark Raymond – Imperial College London 1 ACES workshop, March 2009

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SLIDE 2

CMS LHC Si strip readout system

APV CMS FED (9U VME) APVMUX lasers ~100m analog

  • pto-hybrid

inner barrel sensor 12 96 laser driver x15 000 analog

  • ptical

receivers x15,000 APV25 0.25 µm CMOS FE chip APV outputs analog samples @ 20 Ms/s APVMUX multiplexes 2 APVs onto 1 line @ 40 MHz

analogue readout

APVMUX multiplexes 2 APVs onto 1 line @ 40 MHz Laser Driver modulates laser current to drive

  • ptical link @ 40 Ms/s / fibre

O/E conversion on FED and digitization @ 9 bits (effective) 2 @ ~ 9 bits (effective)

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SLIDE 3

CMS LHC strip readout system

CMS FED (9U VME) lasers ~100m analog

  • pto-hybrid

inner barrel sensor 12 96 laser driver OFF-DETECTOR LINK DATA MERGER FRONT END CHIPS LHC strip readout system actually rather simple – breaks down into 3 components FRONT END CHIPS APV25 APV25 DATA MERGER APVmux – multiplexes outputs of 2 APVs onto one line OFF-DETECTOR LINK analogue – APVmux output drives laser driver => 2 APVs per off-detector fibre 3 analogue APVmux output drives laser driver 2 APVs per off detector fibre system simplicity comes from choosing not to zero-suppress (sparsify) on front end

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SLIDE 4

LHC control / readout chain overview

trigger control APVE T1 FEC ~75,000 APVs fast control (CK/T1) digital opto link T1 system inhibit digital opto-link FED readout analog opto-link predicted di it l h d analog opto link APV O/P F no zero-suppression (sparsification) on detector ll 75 000 APV ti h l digital header digital header APV O/P Frame all 75,000 APVs operating synchronously (all FE chips doing same thing at same time) advantages can be emulated externally (APVE) to prevent APV buffer overflows 128 analogue samples APV buffer overflows no need to timestamp on front end data volume occupancy independent easy to identify upset chips (digital header) 20 Ms/s readout -> 7 µs pedestal, CM subtraction and zero suppression on FED raw data also available for setup, performance monitoring and fault diagnosis 4 analog, unsparsified readout provides relatively simple and robust system

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SLIDE 5

SLHC challenges for CMS tracker

1) power higher granularity => more FE chips electronics related material dominates existing material budget (cabling cooling) & we want to reduce this CMS tracker material budget (cabling, cooling) & we want to reduce this 2) triggering not possible to keep L1 trigger rate at 100 kHz without contribution from tracker contribution from tracker => new features and existing architectures need re-design and replacement

η

what we like about our present system analog pulse height info made possible by custom analog off-detector link no on-detector sparsification no on-detector sparsification system simplicity - no fluctuating data volumes event-to-event what must change for SLHC

  • ff-detector links -> high speed digital
  • ff detector links > high speed digital

=> digitization on FE if want to retain pulse height info will look at pros and cons of different FE chip architectures 5

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SLIDE 6

LHC front end chip architecture

FE amp analog pipeline pipe readout analog

APV25

100 80 60 pre-rad 1 Mrads 4 Mrads 10 Mrads

Peak g MUX analog

  • ff-chip

O/P d i

60 40 20 ADC counts

slow control, bias, driver

250 200 150 100 50 time [nsec] 100

Decon digital digital test pulse, ……

80 60 40 C counts pre-rad 1 Mrads 4 Mrads 10 Mrads

Decon.

40 20 ADC 250 200 150 100 50

existing LHC architecture – APV25 slow 50 nsec CR-RC FE amplifier, analog pipeline, 2.7 mW/channel

250 200 150 100 50 time [nsec]

peak/deconvolution pipe readout modes peak mode -> 1 sample -> normal CR-RC pulse shape deconvolution -> weighted sum of 3 consecutive samples combined to give single BX resolution 6 all analog approach – not compatible with digital off-detector data transmission moving to SLHC – if want to retain pulse height information – where to digitise?

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SLIDE 7

“digital APV” architecture

FE amp analog pipeline pipe readout analog MUX ADC

  • ff-chip

serialize + O/P driver CM subtract + sparsify? digital digital digital slow control, bias, test pulse,… 130nm 65nm ADC power @ 20 MHz [mW] digitization before pipeline? (on every channel) early assumptions said no – ADC power too high (ITRS 2003) still valid? - maybe not in future processes (90 nm 65 nm) 8 bits 6.4 2.5 6 bits 1.6 0.6 still valid? maybe not in future processes (90 nm, 65 nm) some new ADC architectures beating previous power predictions * but negligible power / channel still some way off digitization after pipeline? from ITRS roadmap 2003 digitization after pipeline? negligible power/channel is achievable - ADC power shared between all front end channels analog pipeline remains so could retain slow shaping + analog deconvolution approach but this architecture still brings some disadvantages 7 but this architecture still brings some disadvantages *see - A. Marchioro - http://indico.cern.ch/getFile.py/access?contribId=26&resId=0&materialId=slides&confId=41832

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SLIDE 8

digital APV architecture disadvantages

FE amp analog pipeline pipe readout analog MUX ADC

  • ff-chip

serialize + O/P driver CM subtract + sparsify? digital digital digital slow control, bias, test pulse,… very complicated chip – all the complexity of APV + more fast ADC required data volume means sparsification necessary to keep data at manageable levels

  • ff-detector

FED features in data volume means sparsification necessary to keep data at manageable levels

  • n-chip CM subtraction probably necessary (analogue pipeline contributes)

analogue pipeline using gate capacitance may still be possible in 130nm – not in finer processes (plan to increase pipeline length for SLHC) existing system analogue circuitry throughout chip – harder to achieve supply noise rejection sparsification leads to on-detector system complexity extra buffering required (more chips) to cope with varying trigger-to-trigger data volume 8 front-end timestamping if want to keep simple un-sparsified system => pulse ht. info has to go => binary

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SLIDE 9

binary architecture – un-sparsified

FE amp comp. digital pipeline digital MUX what about binary un-sparsified? much simpler (than digital APV) particularly for pipeline and readout side O/P

  • ff-chip

particularly for pipeline and readout side need fast front end and comparator => more power here vth vth O/P driver but no ADC power and much simpler digital functionality will consume less – this architecture will be lowest power vth slow control, digital digital binary architecture also compatible with some approaches to track triggering layers can retain system features we like vth bias, test pulse, …… g g can retain system features we like simpler synchronous system, no FE timestamping data volume known, occupancy independent (no trigger-to-trigger variation) un-sparsified binary is the option we are currently planning to implement but less diagnostics (can measure front end pulse shape on every channel in present system) loss of position resolution 9 loss of position resolution common mode immunity

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SLIDE 10

front end amplifier design

binary FE design has begun in 130 nm CMOS preliminary specifications and assumptions n on p sensor (signal current flows out of amplifier) n-on-p sensor (signal current flows out of amplifier) promising option for rad hard sensors need to tolerate leakage current up to ~ 1 µA allows DC coupling for lower cost sensors allows DC coupling for lower cost sensors need to be fast enough for acceptable timewalk aim for peaking time ~ 20 nsec 10

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SLIDE 11

130nm front end amplifier

C CF high R 1.2V

current preferred architecture for fast FE (~20 ns peaking)

CSENS iSIG + ILEAK CPF VREF to comp. CC

F

for fast FE ( 20 ns peaking)

Preamp NMOS I/P device RPF

  • ve

NMOS I/P device no noise penalty - 1/f corner low enough (simulation & published measurements) better connection to sensor for PSR (sensor bias decoupling and I/P FET source both at GND) real resistor feedback low Rpf (200k) allows DC leakage to be accommodated (1 µA -> 200 mV) low Rpf (200k) allows DC leakage to be accommodated (1 µA > 200 mV) uses highest resistance technology in process (1k7/square poly, +/-20%) Rpf//Cpf = 200k//100fF = 20 ns decay time constant of preamp (no pile-up) 200k contributes ~ 220e Postamp Postamp provides gain & risetime provides integrating time constant AC coupled to preamp (DC shift due to leakage decoupled) O/P DC level set by VREF – defines DC level at output (comparator input) 11 will show some simulated performance pictures – all results at preliminary stage

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SLIDE 12

binary FE pulse shape and noise

0.85 pulse shape tuned to keep peaking time ~ constant as CSENSOR varies by increasing current in input FET (IDS) preamp risetime ∝ C /g ( ∝ C /I )

pulse shapes for 4 fC input charge (~ 45 mV / fC )

0.80 0.75 preamp risetime ∝ CSENSOR/gm ( ∝ CSENSOR/IDS ) => power scales linearly with CSENSOR 0.70 0 65 volts

Csensor

2pF 4pF 6pF 1200 300 noise < ~900e for power ~ 200 µW for CSENSOR ~ 6 pF

FE power and noise

0.65 0.60 8pF 10pF 1200 1000 800

  • ns]

300 250 200

dependence on CSENSOR

0.55 200 160 120 80 40 time [nsec] 800 600 [rms electro 200 150 power [uW 400 200 noise [ 100 50 W] noise power always a trade-off between power and noise e.g. thin sensors (< 4fC/mip) or long strips will need more power to achieve acceptable S/N 12 12 10 8 6 4 2 Csensor [ pF]

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SLIDE 13

Effects of leakage current

postamp output unaffected (AC coupled) Postamp

0.8

leakage

preamp output shows DC shift across RPF 1 µA leakage contributes ~ 440e noise to be added in quadrature to amplifier noise p

0.6 s 200 nA 400 nA 600 nA

q p (short shaping time helps with parallel noise) e.g. 900 (total amplifier for CSENSOR ~ 6 pF) + 440 (leakage)

0.4 volts 800 nA 1000 nA

( g ) = ~1000e total Preamp

0.2 300 10

  • 9

200 100

13

300x10 200 100 time

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SLIDE 14

response to overload

  • 0 2

0.0 0.2 0.4

  • lts

preamp input

  • verload behaviour well-controlled

low RPF beneficial 1.2 0 8

  • 0.6
  • 0.4

0.2 v

PF

front end recovers from 4 pC signal and sensitive to normal signals within 2.5 µs 0.8 0.4 0.0 volts preamp output => no “APV-like” hips effect 1.2 1.0 0.8 postamp output 0.6 0.4 0.2 volts 4 fC injected 0.2 0.0 2.5 2.0 1.5 1.0 0.5 0.0 time [usec] 14 time 4 pC injected [usec]

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SLIDE 15

power supply rejection

10 baseline choice for CMS tracker powering is parallel powering (DC-DC) so PSR will be an issue

  • 20
  • 10

BV bare response 100 ns filter 1 us filter power supply rejection at postamp output to sinusoidal waveform on positive supply rail b h d j ti t factor 10 rejection

  • 40
  • 30

dB bare response shows good rejection at low frequency, peaking at ~10 MHz AC preamp/postamp coupling together with t i d l f b h i j

  • 60
  • 50

10

2

10

3

10

4

10

5

10

6

10

7

10

8

10

9

10

10

  • pamp postamp gives good low f behaviour

peaking at ~10 MHz (gain) due to coupling through bias circuits 10 10 10 10 10 10 10 10 10 frequency can improve with realistic filtering, but would prefer some rejection at all frequencies to start with CF needs further study CSENS iSIG + ILEAK CPF VREF to comp. CC CF 15 RPF

  • ve
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SLIDE 16

power estimate

130nm binary chip – non-sparsified readout 0.5 mW / channel seems like an achievable target (c.f. 2.7 mW for APV25) power / channel preamp/postamp e.g. 20 nsec peaking time, short strips CSENSOR ~ 5pF 180 µW comparator estimate from preliminary simulations 20 µW i ll di it l miscellaneous digital estimate loosely based on APV pipe and control logic 60 µW mux + output driver + …. j t i l fi t b i ll t 0 5 W just guess nominal figure to bring overall power to 0.5 mW will depend on implementation. e.g. choice of electrical protocol can hope for saving here, but good to have contingency 240 µW digital is biggest uncertainty, and maybe largest contributor can consider running at lower voltage (dig. power ~ V2) should keep power rails separate on chip to keep option open 16

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SLIDE 17

full prototype in 1st iteration

relative simplicity of unsparsified binary architecture means can go for complete chip on timescale ~ 1year less risky than complex “digital APV” will learn a lot sooner rather than later will learn a lot sooner rather than later will also provide collaborators with something to use to evaluate sensors and modules choose front end most likely to suit SLHC (e.g. n-side readout?) (can still submit test structures for alternative front ends) FE amp comp. digital pipeline digital (can still submit test structures for alternative front ends)

CBC (CMS Binary Chip)

may leave out some features e.g. bias gen., test pulse, I2C I/F p p g p p digital MUX vth e.g. bias gen., test pulse, I C I/F but should have main functionality: pipeline, pipe control logic, and mux., trimDAC for comparator thresholds, O/P driver

  • ff-chip

vth vth t C o co pa ato t es o ds, vth slow control, bias, test pulse, 17 digital digital vth ……

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SLIDE 18

LHC -> SLHC strips readout system

APV 20 Ms/s 0.23 mW/ch FED (x430) AOH APVmux 40 Ms/s 40 Ms/s long strips APV 2.7 mW/ch

digital header

APV O/P Frame

FE module

g 128 analog samples

7µs

recap LHC

APV provides analogue unsparsified output data at 20 Ms/s data frame 7 µs => 70% of off-detector bandwidth used for 100 kHz trigger µ data frame 7 µs 70% of off detector bandwidth used for 100 kHz trigger 2 APVs data interleaved at 40 Ms/s on one electrical line (differential)

  • ne-to-one correspondence to off-detector fibre (i.e. still 2 APVs / fibre)

link power <10% overall channel power 18

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SLIDE 19

LHC -> SLHC strips readout system

20 Mb/s 0.12 mW/ch (assumes 2W/link) short strips 2 x 80 Mb/s 32 2.56 Gb/s GBT based system CBCmux

FE module

x32 CBC 0.5 mW/ch CBC O/P Frame

  • dig. header 128 digital bits

~ 7µs

moving to SLHC - early ideas

binary unsparsified, but output frame format can be similar to APV (just hits, not analog values) CBC could provide output data at 20 Mb/s keep data frame ~7 µs =>4 CBCs data multiplexed at 80 Mb/s onto one electrical line (GBT lane) 32 x 80 Mb/s lanes combined on 2.56 Gb/s off-detector fibre (128 CBCs / fibre) 19 link power ~ 20% overall channel power (assumes 2W / link)

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SLIDE 20

LHC strips readout & control system

AOH APVmux APV long FED (x430) strips PLL DCU CK / T1 PLL Digital Opto-Hybrid I2C FEC (x44)

FE module

CCU CCU CCU CCU CCU CCU

CCU distributes CK/T1 and I2C control busses to up to 16 FE modules PLL chip recovers CK and T1 (missing clock pulse) on FE module DCU chip monitors FE currents, voltages and temperatures 20 I2C used for programming APVs, reading DCU monitoring info, setting up AOH CCU chip electrical control ring architecture on front end reduces no. of control fibres required

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SLIDE 21

SLHC strips readout & control system

CBC 128 CBCs / GBT short strips GBT based system CBCmux/PLL?/DCU? readout data y x16 CK / T1 I2C TTC + slow control

FE module

system design here is not yet well defined (my thoughts here) should be much simpler (on-detector) than LHC system e.g. could combine mux/PLL/DCU functionalities in one chip? GBT based system means GBT + whatever else is needed (if anything) does this map to current GBT functionality? I2C and CK/T1 could be common to a number of FE modules 21

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SLIDE 22

track triggering

two concepts compatible with microstrip tracker Two-In-One Design Cluster Width Discrimination

W.Erdmann R.Horisberger *

g

bond stacked upper and lower sensor channels to adjacent channels on same ASIC no interlayer communication - no extra correlation chip just simple logic on readout chip, looking

Cluster Width Discrimination

j p g p g at hits (from 2 layers) on adjacent channels high PT track -> narrow cluster width see: Track momentum discrimination see: Track momentum discrimination using cluster widthin Si strip sensors, G.Barbagli, F.Palla, G. Parrini, TWEPP07 22

*http://indico.cern.ch/getFile.py/access?contribId=3&sessionId=0&resId=0&materialId=0&confId=36580

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SLIDE 23

triggering logic on FE chip

FE amp comp. digital pipeline digital MUX v O/P

  • ff-chip

vth vth driver vth slow control, bias digital digital vth bias, test pulse, …… simple logic to select cluster width (programmable) (or coincidence window between layers for 2-in-1) cluster info (address + width)

  • r coincidence address (+ data)

binary FE required comparator needed to feed trigger logic system architectures are evolving 23 system architectures are evolving e.g. further ideas to combine clusters in data concentrator chip before transmission off-module, see:

https://twiki.cern.ch/twiki/pub/CMS/SLHCTrackTriggerPrimitiveTaskForce/TriggerTaskForce14Jan09.pdf - F.Palla

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SLIDE 24

summary & plans

main SLHC design challenges are power and triggering current plans for CMS strip tracker are: binary unsparsified architecture lose pulse height info, but retain some system features we like should offer lowest possible FE chip power full-size 130nm chip on first iteration – hope to submit this year front end amplifier already under design – other parts will begin soon specifications at preliminary stage – will develop over coming months binary architecture already compatible with some track-trigger approaches under consideration relative simplicity of readout scheme should allow to free-up resources to help develop track-trigger solution (“two-in-one”, cluster-width, or stacked pixels) => more chips to develop final words ti i h t hi d t d i i j t th t t h ld ’t f t i t f t time is short – chip and system design process is just the start, shouldn’t forget many issues to confront: testing – bare chips and modules new powering schemes, SEU immunity, low temperature operation,… assembly techniques may differ from past (wire -> bump-bonding?) hi d ti hi th i t l t t ti d/ t t i t/ t 24 chip production: more chips than in past – longer test time and/or more test equipment/centres has to start some years (maybe 5?) before tracker installation