CMOS Sensor for the Cold and Tiny Yuan Mei Lawrence Berkeley - - PowerPoint PPT Presentation

CMOS Sensor for the Cold and Tiny

Yuan Mei Lawrence Berkeley National Laboratory

TPC is wonderful

Physics Today 31(10), 46 (1978) CCD, W. Boyle & G. Smith @ Bell Labs, 1969

2

Signal extraction remains a challenge

https://www.visiononline.org/blog-article.cfm/CCD-vs-CMOS-Image-Sensors-Which-are-Better/82

TPC signal extraction

• µ-PIC (Micro Pixel Chamber)
• Printed Circuit Board technology
• 400µm pitch
• Some electron gain in gas
• Difficult for readout and scale-up
• D3, InGrid etc.
• Charge multiplication stage
• Non-specific ASIC readout
• FE-I3/-I4
• TimePix

S.E. Vahsen et al. http://arxiv.org/abs/1110.3401

3

cathode E PMT PMT S1 S2 e− γ, n, χ dt

• Liquid Xenon TPC
• Time Projection Chamber
• Wire and/or light readout
• mm~cm spatial resolution

XENON, LUX, LZ, etc.

Readout?

4

Avalanche gain?

• µ-PIC (Micro Pixel Chamber)
• Printed Circuit Board technology
• GEM
• Array of micro-holes in

thin foils with conductor cladding on both sides

5

• MicroMegas
• Micromesh placed (very)

close to readout PCB

• Catch charge as early as possible, convert

to digital information immediately

• Low noise
• Full 3D information
• Truly (massively) pixelated (2D)
• Adequate timing (waveform digitization)
• Affordable

Topmetal CMOS direct charge sensor

Topmetal Node Vreset RESET Vcc Pixel Output Row Col Ibias Buffer

R C

Source Drain Source Drain

PMOS CAP NMOS

Charge track

p-substrate

N-Well P-Well Gate Gate

GR GR

TM

Topmetal-I Topmetal-II-

• Direct voltage readout
• High analog bandwidth
• Charge sensitive amplifier, <15e- noise
• Clock-less, frame-less logic hits readout

7

CSA_VREF Md

• bit DAC

Topmetal & Gring CMP Cf ROW_SEL COL_SEL CSA FB_VREF CMP_VREF FB_RST EN SPDT U9U Priority Logic U<U Mf M: M> Pixel Addr Pull Up < 9 : >

• +

K COL_RST Column Bus Flag Reset EN PFI PFO AddrEN FB_RST AVDD AVDD TIME<9:<> ADDR<K:<> AVDD A_OUT +:9 :uA ICOL Ms9 Ms: AVDD From PFOi-9 To PFIim9 Ma9 Ma:

COL_READ CLK

• XFAB XH035 Process
• ~80µm pixel size

NIMA 810, 144 arXiv:1407.3712

Topmetal-II- seeing alpha (ion) tracks in air

NIMA 810, 144, 2016

y [pixel] x [mm] 10 20 30 40 50 60 70 1 2 3 4 5

t0

y [mm] 1 2 3 4 5

t1 t2 t3

x [pixel] 10 20 30 40 50 60 70

t4

−2 2 4 6 8 10 [mV]

t5

µ=10.47 [mV] σ=0.42 [mV], ENC=13.9 e− 10 mV step injection Baseline distribution µ=827.6 [mV] σ=1.2 [mV], ENC=39.5 e−

U [V] t [ms] Raw waveform Trapezoidal shaper 0.824 0.826 0.828 0.83 0.832 0.834 0.836 0.838 0.84 5 6 7 8 9 10 11 12 13 14

Topmetal

241Am

~ E 5 cm e− e− e−

• bit DAC

• +

Δt = 3.3ms

Electron-track Compton Imaging

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• Medical Imaging
• Gamma (X-ray) Astronomy

Ne(90%)+DME(10%) @ 80kPa, 55Fe events (5.9keV X-ray), GEM on Topmetal-II-

2.5 x 2.5 mm field of view

http://www-cr.scphys.kyoto-u.ac.jp/research/MeV-gamma/wiki/wiki.cgi?page=Top_en

CMOS charge sensor array for 0νββ

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• Eliminate charge multiplication
• Focusing electrode 100% coll. eff.
• Direct charge collection in X-Y
• In-sensor digitization
• Inter-sensor network for digital data

transmission

+ + + +

• Electric field

Readout Plane 1 Readout Plane 2

Focusing Electrode CMOS Sensor PCB

PMOS CAP NMOS

No electron multiplication!

Focusing Electrode CMOS Sensor PCB

Sensor array

5cm

python program generated PCB, parametrized

CMOS works in the cold

−6×10−5 −4×10−5 −2×10−5 2×10−5 4×10−5 6×10−5 8×10−5 0.0001 0.00012 −0.2 0.2 0.4 0.6 0.8 1 1.2 1.4 Ids [A] Vds [V] NMOS IV scan 0.1K 77K 300K −6×10−5 −4×10−5 −2×10−5 2×10−5 4×10−5 6×10−5 8×10−5 0.0001 0.00012 −0.2 0.2 0.4 0.6 0.8 1 1.2 1.4

State-of-the-art cold electronics

14

77K – LArPix, Q-Pix etc.

Digital/ Control

Amplifier%with%SelfEtriggered%Digi=za=on%and%Readout%

FrontEend%amplifier$ SelfEtriggering%Discriminator$ Standard%SAR%Digi=zer$ Digital%Control$

4K – FPGA etc. Driven by quantum computing needs

http://aip.scitation.org/doi/pdf/10.1063/1.4939094 http://aip.scitation.org/doi/pdf/10.1063/1.4979611 PhysRevApplied.3.024010

Logic

Multi- channel DAC ADC Coupler Multi-plexing Qubits Switch matrix

Pulsing

Biasing Readout

Address-line bus

dc Digital Readout carrier Prime waveform

Waveform generator

+

20 mK

300 K

4 K

Programming

100110100 001100010

Clock Power

Dilution refrigerator

Prime-line bus

CMOS @ <4K

15

Conventional CMOS designed to work at <4K temperature. Low-noise Transimpedance Amplifier (TIA) replaces SQUID 55nm CMOS devices proven to function down to ~10mK

−2×10−7 −1×10−7 1×10−7 2×10−7 −8 −6 −4 −2 2 4 6 8 IDB [A] VDB [V] Drain−Body IV scan, Floating G,S NMOS1 10~20mK NMOS1 60.8K NMOS1 298K PMOS2 10~20mK PMOS2 59.1K PMOS2 298K −2×10−7 −1×10−7 1×10−7 2×10−7 −8 −6 −4 −2 2 4 6 8

Rsh RTES Rf Cf Vo Tp Ts A TIA

−6×10−5 −4×10−5 −2×10−5 2×10−5 4×10−5 6×10−5 8×10−5 0.0001 0.00012 −0.2 0.2 0.4 0.6 0.8 1 1.2 1.4 Ids [A] Vds [V] NMOS IV scan 0.1K 77K 300K −6×10−5 −4×10−5 −2×10−5 2×10−5 4×10−5 6×10−5 8×10−5 0.0001 0.00012 −0.2 0.2 0.4 0.6 0.8 1 1.2 1.4

Interfacing quantum sensors

16

Ds

Absorber Crystal (TeO2) Thermistor (NTD-Ge) Thermal coupling (PTFE) Heat bath ~10 mK (Copper) Energy release Si Heater (ref. NTD Ge Thermistor

NTD in CUORE TES in CUPID

s

SQUID Bias Out

10 mK 600 mK 300 K

Rsh = 20 mΩ L = 6 nH Rfb = 10 kΩ RTES = 0.5 Ω

+ Superconducting Qubits + CMB TES array

W=0.5u L=1.2u U1 NM W=1.2u L=1.2u U3 NM U4 W=10u L=0.18u M=1 U5 W=0.5u L=10u U6 W=1.2u L=10u I2 10n U8 W=0.22u L=10u R1 100Meg .5u VDD U1D Vgn2 Vin+ Vout Vouts ??? ??? ??? ??? ???

Stay Tuned!

Contact Yuan Mei <ymei@lbl.gov>