Chines nese An Antarc rctic ic Observ ervat atory
- ry
- - Latest Developments for DATE5
Sheng-Cai Shi & TeSIA Team Purple Mt Observatory, CAS, China Key Lab of Radio Astronomy, CAS, China
Chines nese An Antarc rctic ic Observ ervat atory ory -- -- - - PowerPoint PPT Presentation
Chines nese An Antarc rctic ic Observ ervat atory ory -- -- Latest Developments for DATE5 Sheng-Cai Shi & TeSIA Team Purple Mt Observatory, CAS, China Key Lab of Radio Astronomy, CAS, China Out utlin line Introduction DATE5
Sheng-Cai Shi & TeSIA Team Purple Mt Observatory, CAS, China Key Lab of Radio Astronomy, CAS, China
Dome A
Altitude: 4093m (60km×10km) Lowest temp: -83℃ A plateau of small fluctuation 1300km from China’s
Zhongshan station
Extremely good THz/IR windows
Transmission~0.4 @ 1.5THz
Site Survey & Small Telescope
+Site Testing & Middle-size Telescope Dome A Observatory Phase I Dome A Observatory Phase II
2.5m Opt/NIR KDUST 5m THz DATE5 6-8m Opt/NIR 15m THz
preliminary design of DATE5
Antenna enna Cassegrain Diamet eter er 5m, with rms accuracy <10µm Recei eiver er 1x4 superconducting SIS & HEB mixer Band nd 350µm & 200µm IF B F BW 4GHz x 4 beams x 2 bands FOV OV 5′×5′(200µm) Pointi nting ng ≤2"
Quasi Quasi Optic Optics
Antenna enna Subsys bsystem em Rx S Subsy syst stem em
Fr Fronten
Unit (H350 & 0 & H H200) IF IF Unit Unit (4GHzx 4GHzx8) LO Units LO Units (H350 H350- & & H200 H200-ab)
Remot
e Cont ntrol
Subsy syst stem em
Anten Antenna na
FFTS FFTS (4GHzx8) zx8)
Credit: DATE5 science team
Z ULIRGs LIRGs
All integ ntegrated i in a n a 4K 4K cryos
tat
H350 band: 350 band: 1x 1x4 S 4 SIS @ 350 350µm H200 band: 200 band: 1x 1x4 H 4 HEB @ @200 200µm IF bandw bandwidth: 4G 4GHz x x 8 Freq eq res esol
100kHz
in insi side vie view
H200 HEB mixer TEM image of the HEB microbridge H200 HEB mixer chip
5.5 nm 5.5 nm Si NbN SiOx
Nb NbN film t thickness ~ ~5.5nm
0.65~ 5~1. 1.45T 5THz
5
Normalized power(dB) Angle(degree)
simulated-H simulated-E measured-H measured-E
Measured and simulated near-field and far-field beam patterns @ 0.85THz Noise temperatures (uncorrected) measured @ 0.85THz & 1.26THz
Trec=2000K @0.85THz Trec=650K @1.26THz
1x4 beam H350 SIS mixer
H350 waveguide SIS mixer circuit
Diagram of 2GHz-bandwidth FFTS Diagram of the algorithm of the FPGA- based 32k channels FFTS
A 2GHz-bandwidth FFTS Dyna namic r range ange: ~ 30d 30dB Allan v var ariance ti time: ~ e: ~ 2000 2000s
Combined THz QCL & HEB with a Gas Cell for the detection of 3.5THz methanol line
3.5THz 3rd DFB QCL (by MIT) THz HEB by SRON
Measured 3.5THz methanol line
Y.Ren, et al., Appl. Phys. Lett. , 101111 (2012)
SRON/TUDelft PMO MIT …
Latest cooling result
Developed jointly with SHI Shanghai, with the help of SHI Japan Goal: 1) ~3kW power consumption, 2) able to operate at low temperatures about -20°C and to store at low temperatures about -40°C
SHI HI RDK RDK-205D 05D 0.5W 0.5W @ @ 4.2K 4.2K 5W 5W @ 40K @ 40K
THz HEB by SRON
Det etec ector
TES or MKIDs Arra rray si size ze 32x32 Band and 350µm Sensit itiv ivit ity BGLP, 1x10-16W/Hz0.5
TeSIA
Quasi-
TES/ MKIDs LT MUX RT MUX 0.3K/4K Cryocooler DAQ/ Control
TES 8x8 PCB SQUID ASIC RT electronics 1/4K 4K 300K 0.3K
ASIC SQUID TES Array (8x8 @ 850um) w ith TDM
Measured R-T for Ti (l) & NbSi (r) devices
Ti TES G=170~ 280 pW/K NEPdark≈6.5e-17W/Hz0.5
2 4 6 8 20 40 60 288 mK Current (µA) Voltage (µV)
NbSi bSi TES G=345 pW/K NEPdark≈5.4e-17W/Hz0.5
0.1~500MHz 4~8.5GHz MKIDs Array (8x8 @ 850um) w ith FDM
Measured S21 vs T & P Typical Q~104
QMC Dewar Windows M5 M4 M3 Lens Array HDPE Lens 2 HDPE Lens 1
8.5 9.0 9.5 10.0 10.5 0.00 0.02 0.04 0.06
Nb on SiO
2
Resistance (ohm) Temperature (K)
Mask Aligner Sputtering Cluster ICP Etcher
CAS & NSFC funding for DomeA Projects CCAA, Polar Institute (China) & PLATO Team (NSWU) for the deployment & operation
Blue Sky (Canada) and QMC (UK) for good cooperation in developing DomeA FTS Team for CAS’s Int. Collaboration Partnership Program (PMO, CfA, ...) APC/IAS/ASIAA for the fabrication of TES devices RIKEN for the fabrication of MKIDs devices …