9.8m SPAD-based Analogue Single Photon Counting Pixel with Bias - - PowerPoint PPT Presentation
9.8m SPAD-based Analogue Single Photon Counting Pixel with Bias - - PowerPoint PPT Presentation
9.8m SPAD-based Analogue Single Photon Counting Pixel with Bias Controlled Sensitivity International Image Sensors Workshop Neale Dutton, Lindsay Grant and Robert Henderson CMOS SPAD Pixels 2 SPAD + SPAD Only 1b Mem Analogue Digital
- SPAD
- SPAD +
Passive Quench
- Row and
Col Select
- Column
bus sharing
- Time Gate
- 1b Memory
- A “Jot”
- Time Gate
- Analogue
Counter or TAC
- Digital logic
in pixel
- TDC or
Digital Counters
Highest Fill Factor Lowest Fill Factor Least In- pixel Functionality Most In-pixel Functionality
CMOS SPAD Pixels
SPAD + Minimal Digital SPAD Only Analogue 1b Mem
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This Work
CMOS SPAD Pixels
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SPAD + Minimal Digital SPAD Only
[A] Richardson, J. et al. “A 32×32 50ps Resolution 10 bit Time to Digital Converter Array in 130nm CMOS for Time Correlated Imaging” 2009, CICC, Proc. Of, [B] Webster et al. "A silicon photomultiplier with >30% detection efficiency from 450-750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm
CMOS“ Proc of ESSDERC, 2012
[C] Walker, R. et al. “High Fill Factor Digital Silicon Photomultiplier Structures in 130nm CMOS Imaging Technology” 2012, IEEE NSS, Proc. Of, [D] Maruyama, Y. et al. “ A Time-Gated 128X128 CMOS SPAD Array for On-Chip Fluorescence Detection” IISW 2011
Analogue 1b Mem
9.8µm
Fabricated Test Array
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n+
N-well P-substrate
S T I S T I n+
Deep Retrograde N-well p+
S T I
N-well P-well P-well NMOS Logic
S T I
Pixel Schematic
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Column
RST RD GND VS VG EN DIS
VC
VDD VQ SPAD VHV SPADGND TEST DIS
M1 M2 M3 M4 M5 M6 M7 M8 M9 M10
SPAD & Quench Time Gate CTA Readout
VSPAD VIN VB MC CP
ΔVC = (ΔVIN– VB – VT_M7) . (CP/CMC)
Charge Transfer Amplifier Timing
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EN VSPAD VC
ΔVC
VB VIN
ΔVC = (ΔVIN– VB – VT_M7) . (CP/CMC)
RST
CTA Operation
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Bias Controllable Sensitivity VS = 0.0V VS = 0.3V VS = 0.9V VS = 0.6V
Pixel Characterisation
- Column Output Voltage Histogram – Discretised Poisson Curve
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1Ph 2Ph 3Ph 4Ph 5Ph 6Ph 7Ph
VS = 0.0V VS = 0.3V VS = 0.6V
Bias Controlled Sensitivity
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First Order Eq’n: ΔV = (ΔVIN– VB – VT) . (CP/CMC)
Full Well Capacity
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Pixel Response Non Uniformity
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𝜏∆𝑊 = 𝐷𝑄 𝐷𝑁𝐷 . 𝜏𝑊𝑈_𝑁7
2 + 𝜏𝑊𝑇𝑄𝐵𝐸 2
First Order Eqn:
Input Referred Noise
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[1] Teranishi 2012: Readount noise less than 0.3e- for electron counting
Switched Current Source Mode
- CTA operated as a switched current
source.
- This mode enables fast single photon
detection.
- Zero, one, few photons .
- Time gated QIS pixel, Fossum 2011 [11]
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Switched Current Source Mode
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Switched Current Source Mode
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Summary (1)
- 11T NMOS-only SPAD-based Single Photon Counting
pixel implemented in low voltage 130nm imaging CMOS with no extra implants.
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Summary (2)
- Two modes:
- ‘CTA’ Analogue Counting
- ‘SCS’ 1b Memory
- Bias controlled sensitivity
- PRNU <2% for sensitivity range 5.5mV to 13.1mV/event
- Scalable pixel design with zero static bias current.
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