9.8m SPAD-based Analogue Single Photon Counting Pixel with Bias - - PowerPoint PPT Presentation

9 8 m spad based analogue single photon counting pixel
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9.8m SPAD-based Analogue Single Photon Counting Pixel with Bias - - PowerPoint PPT Presentation

9.8m SPAD-based Analogue Single Photon Counting Pixel with Bias Controlled Sensitivity International Image Sensors Workshop Neale Dutton, Lindsay Grant and Robert Henderson CMOS SPAD Pixels 2 SPAD + SPAD Only 1b Mem Analogue Digital


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SLIDE 1

9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias Controlled Sensitivity

International Image Sensors Workshop Neale Dutton, Lindsay Grant and Robert Henderson

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SLIDE 2
  • SPAD
  • SPAD +

Passive Quench

  • Row and

Col Select

  • Column

bus sharing

  • Time Gate
  • 1b Memory
  • A “Jot”
  • Time Gate
  • Analogue

Counter or TAC

  • Digital logic

in pixel

  • TDC or

Digital Counters

Highest Fill Factor Lowest Fill Factor Least In- pixel Functionality Most In-pixel Functionality

CMOS SPAD Pixels

SPAD + Minimal Digital SPAD Only Analogue 1b Mem

2

This Work

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SLIDE 3

CMOS SPAD Pixels

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SPAD + Minimal Digital SPAD Only

[A] Richardson, J. et al. “A 32×32 50ps Resolution 10 bit Time to Digital Converter Array in 130nm CMOS for Time Correlated Imaging” 2009, CICC, Proc. Of, [B] Webster et al. "A silicon photomultiplier with >30% detection efficiency from 450-750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm

CMOS“ Proc of ESSDERC, 2012

[C] Walker, R. et al. “High Fill Factor Digital Silicon Photomultiplier Structures in 130nm CMOS Imaging Technology” 2012, IEEE NSS, Proc. Of, [D] Maruyama, Y. et al. “ A Time-Gated 128X128 CMOS SPAD Array for On-Chip Fluorescence Detection” IISW 2011

Analogue 1b Mem

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SLIDE 4

9.8µm

Fabricated Test Array

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n+

N-well P-substrate

S T I S T I n+

Deep Retrograde N-well p+

S T I

N-well P-well P-well NMOS Logic

S T I

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SLIDE 5

Pixel Schematic

5

Column

RST RD GND VS VG EN DIS

VC

VDD VQ SPAD VHV SPADGND TEST DIS

M1 M2 M3 M4 M5 M6 M7 M8 M9 M10

SPAD & Quench Time Gate CTA Readout

VSPAD VIN VB MC CP

ΔVC = (ΔVIN– VB – VT_M7) . (CP/CMC)

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SLIDE 6

Charge Transfer Amplifier Timing

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EN VSPAD VC

ΔVC

VB VIN

ΔVC = (ΔVIN– VB – VT_M7) . (CP/CMC)

RST

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SLIDE 7

CTA Operation

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Bias Controllable Sensitivity VS = 0.0V VS = 0.3V VS = 0.9V VS = 0.6V

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SLIDE 8

Pixel Characterisation

  • Column Output Voltage Histogram – Discretised Poisson Curve

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1Ph 2Ph 3Ph 4Ph 5Ph 6Ph 7Ph

VS = 0.0V VS = 0.3V VS = 0.6V

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SLIDE 9

Bias Controlled Sensitivity

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First Order Eq’n: ΔV = (ΔVIN– VB – VT) . (CP/CMC)

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SLIDE 10

Full Well Capacity

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SLIDE 11

Pixel Response Non Uniformity

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𝜏∆𝑊 = 𝐷𝑄 𝐷𝑁𝐷 . 𝜏𝑊𝑈_𝑁7

2 + 𝜏𝑊𝑇𝑄𝐵𝐸 2

First Order Eqn:

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SLIDE 12

Input Referred Noise

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[1] Teranishi 2012: Readount noise less than 0.3e- for electron counting

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SLIDE 13

Switched Current Source Mode

  • CTA operated as a switched current

source.

  • This mode enables fast single photon

detection.

  • Zero, one, few photons .
  • Time gated QIS pixel, Fossum 2011 [11]

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SLIDE 14

Switched Current Source Mode

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SLIDE 15

Switched Current Source Mode

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SLIDE 16

Summary (1)

  • 11T NMOS-only SPAD-based Single Photon Counting

pixel implemented in low voltage 130nm imaging CMOS with no extra implants.

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SLIDE 17

Summary (2)

  • Two modes:
  • ‘CTA’  Analogue Counting
  • ‘SCS’  1b Memory
  • Bias controlled sensitivity
  • PRNU <2% for sensitivity range 5.5mV to 13.1mV/event
  • Scalable pixel design with zero static bias current.

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SLIDE 18

Thank You Questions?