2 Confidential What is Possible ? Box Cuts Volumes as large as - - PowerPoint PPT Presentation

2
SMART_READER_LITE
LIVE PREVIEW

2 Confidential What is Possible ? Box Cuts Volumes as large as - - PowerPoint PPT Presentation

microPREP TM pico-second laser ablation system Making the Impossible Possible Danielle Elswick Gatan, Inc. 1 Confidential 2 Confidential What is Possible ? Box Cuts Volumes as large as 3,000 microns (length) by 300 microns (width)


slide-1
SLIDE 1

Confidential

1

microPREPTM

pico-second laser ablation system

Making the Impossible Possible

Danielle Elswick Gatan, Inc.

slide-2
SLIDE 2

Confidential

2

slide-3
SLIDE 3

Confidential

3

What is Possible ?

  • Box Cuts
  • Volumes as large as 3,000 microns (length) by 300 microns (width) by 300

microns (deep) can be excavated in < 25 minutes

  • Line Cuts
  • Areas can be line cut as large as 25,000 microns long by 1,500 microns deep in

~15 to 25 minutes

  • TEM Lamella
  • Plan View (3mm half grids from your sample) and Cross Sections
  • Large Window(s) with Multiple Windows using FIB
  • Questions:
  • 1. Damage layer? ~ 1 micron
  • 2. How to remove? FIB or Broad Argon Beam?
  • 3. What can you use this tool for that may not be possible in reasonable time with

FIB?

  • Advanced Package Devices
  • Atom Probe Tips
  • XRM Samples
slide-4
SLIDE 4

Confidential

4

How Fast ? microPREP trenches in silicon with TSV’s

#70 300x300x300 microns Time (actual) =220 sec. Ga FIB 30 keV&65nA Time (calc.) = 17.5 Days #69 3000x300x300 microns Time (actual)= 1420 seconds Ga FIB (calc.)~ 0.5 years

slide-5
SLIDE 5

Confidential

5

How Fast ? microPREP trenches in silicon with TSV’s

#70 300x300x300 microns Time (actual) =220 sec. Ga FIB 30 keV&65nA Time (calc.) = 17.5 Days #69 3000x300x300 microns Time (actual)= 1420 seconds Ga FIB (calc.)~ 0.5 years

slide-6
SLIDE 6

Confidential

6

microPREP + Broad Argon Beam (Ilion II)

No FIB REQUIRED !

Workflow for Advanced Packages – Stacked Chip (x4)

slide-7
SLIDE 7

Confidential

7

Workflow for Sectioning Stacked Packages

  • Slice through

Package

  • Time = 15 Minutes

microPREP

  • Cross Section

Polish

  • Time = 1 Hour

Ilion II

slide-8
SLIDE 8

Confidential

8

Process for results shown in the following slides

  • A single package was obtained and multiple microPREP

slices were made. X-Ray Images package, Right Courtesy of Chipworks

  • Line cuts across the complete width ~9 mm and through the

entire package length ~11 mm were made in 15 minutes thickness ~ 680 microns

slide-9
SLIDE 9

Confidential

9

Low Mag SEM Image of Stacked 4 x Chip Area microPREP through package for 15 minutes then Ilion II cross section polish

Chip 1 Chip 2 Chip 3 Chip 4

slide-10
SLIDE 10

Confidential

10

High Res SE Image of Single Chip of 4 Chip Stack

slide-11
SLIDE 11

Confidential

11

microPREP + Broad Argon Beam (Ilion II)

No FIB REQUIRED !

Workflow for Advanced Packages – Mobile Home Phone Button

slide-12
SLIDE 12

Confidential

12

Workflow for Sectioning Stacked Packages

  • Slice through Mobile

Home Button

  • Time = 15 Minutes

microPREP

  • Cross Section

Polish

  • Time = 1 Hour

Ilion II

slide-13
SLIDE 13

Confidential

13

Home Button Post microPREP Slice Mounted for Ilion II Polish Laser Cut 6mm long and 1.2 mm thick device in 15 minutes

Ilion II Blade

1000 µm

slide-14
SLIDE 14

Confidential

14

Overview of Home Button microPREP + Ilion II

SE Image BSE Image Ilion II Blade & Argon Polishing Direction

slide-15
SLIDE 15

Confidential

15

Post Ilion Polish

slide-16
SLIDE 16

Confidential

16

microPREP + Broad Argon Beam (Ilion II) No FIB REQUIRED !

Workflow for Ball Bonds

slide-17
SLIDE 17

Confidential

17

Workflow for Cross Sectioning Packages

  • Slice entirely through

Package

  • Time = 7 Minutes

microPREP

  • Cross Section

Polish

  • Time = 1 hr.

Ilion II

slide-18
SLIDE 18

Confidential

18

Ball Bonds microPREP cut through the package 11 mm long and ~ 500 microns thick Post Ilion II polish

Silicon Device Ilion II Blade

slide-19
SLIDE 19

Confidential

19

Ball Bond One of Three Polished

slide-20
SLIDE 20

Confidential

20

Higher Mag SE & BSE Image of Interface

SE Image BSE Image

slide-21
SLIDE 21

Confidential

21

SE & BSE Images of transistors below the ball bond/UBM layer

SE Image BSE Image

slide-22
SLIDE 22

Confidential

22

Summary Advanced Package Workflows

  • A workflow starting with a microPREP provides the basis for

a fast, flexible preparation of Very Large ROI’s

  • A microPREP based workflow permits access to regions of

packaged devices impossible to access with any FIB

  • The combination of microPREP + Ilion II permits significantly

larger ROI’s faster and at a lower cost of ownership compared to a FIB based workflow

  • BUT! It is micro– prep when nano – prep is required then a

workflow of microPREP + FIB increases the throughput and value of the FIB

slide-23
SLIDE 23

Confidential

23

Advanced Packaging, Surgical Excavation with FIB

5 Minutes microPREP 60 Minutes Ga FIB

slide-24
SLIDE 24

microPREP is capable of modifying volumes far larger than other tools and is the perfect tool to quickly prepare huge areas for final milling in the FIB.

Post microPREP + Ga FIB

microPREP FIB

slide-25
SLIDE 25

Silicon After Thinning, Silicon is the Half Grid

TEM Plan View Samples

slide-26
SLIDE 26

Silicon Top Down View Image

slide-27
SLIDE 27

Low Structural Damage and Targeted Precision on the Micron Scale

Shown on sapphire, in a top down optical view.

slide-28
SLIDE 28

Preparation step microPREP steps Follow-up step

Assembling the plate on a jig Laser cutting

  • f XL-Chunk
  • f material

Transferring XL-Chunk to a handling mount Local laser thinning of XL-Chunk in the handling mount Final thinning with Ar+ broad beam or FIB

microPREP Workflow for TEM Cross Sections

Preparation step microPREP steps Follow-up step

Assembling the plate on a jig Laser cutting

  • f XL-Chunk
  • f material

Transferring XL-Chunk to a handling mount Local laser thinning of XL-Chunk in the handling mount Final thinning with Ar+ broad beam or FIB

slide-29
SLIDE 29

Preparation step microPREP steps Follow-up step

Assembling the plate on a jig Laser cutting

  • f XL-Chunk
  • f material

Transferring XL-Chunk to a handling mount Local laser thinning of XL-Chunk in the handling mount Final thinning with Ar+ broad beam or FIB

microPREP Workflow for TEM Cross Sections

slide-30
SLIDE 30

Preparation step microPREP steps Follow-up step

Assembling the plate on a jig Laser cutting

  • f XL-Chunk
  • f material

Transferring XL-Chunk to a handling mount Local laser thinning of XL-Chunk in the handling mount Final thinning with Ar+ broad beam or FIB

microPREP Workflow for TEM Cross Sections

slide-31
SLIDE 31

H-bar in Silicon H-bar in Copper

microPREP for TEM Sample Prep

100 µm

Pillar Array in Silicon

slide-32
SLIDE 32

Confidential

32

Summary

  • Incredibly fast material removal
  • Low structural damage and targeted precision on the micron

scale

  • Recipe driven graphical user interface (GUI)
  • Targeted process flows – microPREP followed by BIB or FIB
  • Packaged Parts
  • SEM
  • TEM – both plan-view and cross-sections
  • Atom Probe and X-Ray Samples
slide-33
SLIDE 33

Confidential

33

Laser Specifications

  • Laser type: Diode pumped solid state (DPSS) laser system
  • Wavelength: 536 nm
  • Average power: 3 W
  • Positional accuracy: ±3 μm
  • Scanner: Galvanmetric
  • Max sample size: 25 x 25 x 1 mm
  • Laser: Class 1 in operation
  • Size (L x W x H): 700 x 800 x 400 mm
  • Weight: 135 kg
  • Power: 230 V – (50/60 Hz), 8 A or 110 V – ( 50/60 Hz), 16 A
  • Other: Compressed air or other gas 25 L/min