2 Confidential What is Possible ? Box Cuts Volumes as large as - PowerPoint PPT Presentation

microPREP TM pico-second laser ablation system Making the Impossible Possible Danielle Elswick Gatan, Inc. 1 Confidential

2 Confidential

What is Possible ? • Box Cuts • Volumes as large as 3,000 microns (length) by 300 microns (width) by 300 microns (deep) can be excavated in < 25 minutes • Line Cuts • Areas can be line cut as large as 25,000 microns long by 1,500 microns deep in ~15 to 25 minutes • TEM Lamella • Plan View (3mm half grids from your sample) and Cross Sections • Large Window(s) with Multiple Windows using FIB • Questions: 1. Damage layer? ~ 1 micron 2. How to remove? FIB or Broad Argon Beam? 3. What can you use this tool for that may not be possible in reasonable time with FIB? • Advanced Package Devices • Atom Probe Tips • XRM Samples 3 Confidential

How Fast ? microPREP trenches in silicon with TSV’s #70 300x300x300 microns Time (actual) =220 sec. Ga FIB 30 keV&65nA Time (calc.) = 17.5 Days #69 3000x300x300 microns Time (actual)= 1420 seconds Ga FIB (calc.)~ 0.5 years 4 Confidential

How Fast ? microPREP trenches in silicon with TSV’s #70 300x300x300 microns Time (actual) =220 sec. Ga FIB 30 keV&65nA Time (calc.) = 17.5 Days #69 3000x300x300 microns Time (actual)= 1420 seconds Ga FIB (calc.)~ 0.5 years 5 Confidential

Workflow for Advanced Packages – Stacked Chip (x4) microPREP + Broad Argon Beam (Ilion II) No FIB REQUIRED ! 6 Confidential

Workflow for Sectioning Stacked Packages • Cross Section • Slice through Polish Package Ilion II microPREP • Time = 1 Hour • Time = 15 Minutes 7 Confidential

Process for results shown in the following slides • A single package was obtained and multiple microPREP slices were made. X-Ray Images package, Right Courtesy of Chipworks • Line cuts across the complete width ~9 mm and through the entire package length ~11 mm were made in 15 minutes thickness ~ 680 microns 8 Confidential

Low Mag SEM Image of Stacked 4 x Chip Area microPREP through package for 15 minutes then Ilion II cross section polish Chip 1 Chip 2 Chip 3 Chip 4 9 Confidential

High Res SE Image of Single Chip of 4 Chip Stack 10 Confidential

Workflow for Advanced Packages – Mobile Home Phone Button microPREP + Broad Argon Beam (Ilion II) No FIB REQUIRED ! 11 Confidential

Workflow for Sectioning Stacked Packages • Cross Section • Slice through Mobile Polish Home Button Ilion II microPREP • Time = 1 Hour • Time = 15 Minutes 12 Confidential

Home Button Post microPREP Slice Mounted for Ilion II Polish Laser Cut 6mm long and 1.2 mm thick device in 15 minutes 1000 µm Ilion II Blade 13 Confidential

Overview of Home Button microPREP + Ilion II SE Image BSE Image Ilion II Blade & Argon Polishing Direction 14 Confidential

Post Ilion Polish 15 Confidential

Workflow for Ball Bonds microPREP + Broad Argon Beam (Ilion II) No FIB REQUIRED ! 16 Confidential

Workflow for Cross Sectioning Packages • Cross Section • Slice entirely through Polish Package Ilion II microPREP • Time = 1 hr. • Time = 7 Minutes 17 Confidential

Ball Bonds microPREP cut through the package 11 mm long and ~ 500 microns thick Post Ilion II polish Silicon Device Ilion II Blade 18 Confidential

Ball Bond One of Three Polished 19 Confidential

Higher Mag SE & BSE Image of Interface SE Image BSE Image 20 Confidential

SE & BSE Images of transistors below the ball bond/UBM layer SE Image BSE Image 21 Confidential

Summary Advanced Package Workflows • A workflow starting with a microPREP provides the basis for a fast, flexible preparation of Very Large ROI’s • A microPREP based workflow permits access to regions of packaged devices impossible to access with any FIB • The combination of microPREP + Ilion II permits significantly larger ROI’s faster and at a lower cost of ownership compared to a FIB based workflow • BUT! It is micro – prep when nano – prep is required then a workflow of microPREP + FIB increases the throughput and value of the FIB 22 Confidential

Advanced Packaging, Surgical Excavation with FIB 5 Minutes microPREP 60 Minutes Ga FIB 23 Confidential

Post microPREP + Ga FIB microPREP is capable of modifying volumes far larger than other tools and is the perfect tool to quickly prepare huge areas for final milling in the FIB. microPREP FIB

TEM Plan View Samples Silicon After Thinning, Silicon is the Half Grid

Silicon Top Down View Image

Low Structural Damage and Targeted Precision on the Micron Scale Shown on sapphire, in a top down optical view.

microPREP Workflow for TEM Cross Sections microPREP steps Follow-up Follow-up Preparation Preparation microPREP steps step step step step Local laser Local laser Transferring Transferring Final Final Assembling Assembling Laser cutting Laser cutting thinning of thinning of XL-Chunk to XL-Chunk to thinning with thinning with the plate on a the plate on a of XL-Chunk of XL-Chunk XL-Chunk in XL-Chunk in a handling a handling Ar+ broad Ar+ broad jig jig of material of material the handling the handling mount mount beam or FIB beam or FIB mount mount

microPREP Workflow for TEM Cross Sections microPREP steps Follow-up Preparation step step Local laser Transferring Final Assembling Laser cutting thinning of XL-Chunk to thinning with the plate on a of XL-Chunk XL-Chunk in a handling Ar+ broad jig of material the handling mount beam or FIB mount

microPREP Workflow for TEM Cross Sections Preparation microPREP steps Follow-up step step Local laser Transferring Final Assembling Laser cutting thinning of XL-Chunk to thinning with the plate on a of XL-Chunk XL-Chunk in a handling Ar+ broad jig of material the handling mount beam or FIB mount

microPREP for TEM Sample Prep H-bar in Silicon H-bar in Copper Pillar Array in Silicon 100 µm

Summary • Incredibly fast material removal • Low structural damage and targeted precision on the micron scale • Recipe driven graphical user interface (GUI) • Targeted process flows – microPREP followed by BIB or FIB • Packaged Parts • SEM • TEM – both plan-view and cross-sections • Atom Probe and X-Ray Samples 32 Confidential

Laser Specifications • Laser type: Diode pumped solid state (DPSS) laser system • Wavelength: 536 nm • Average power: 3 W • Positional accuracy: ±3 μm • Scanner: Galvanmetric • Max sample size: 25 x 25 x 1 mm • Laser: Class 1 in operation • Size (L x W x H): 700 x 800 x 400 mm • Weight: 135 kg • Power: 230 V – (50/60 Hz), 8 A or 110 V – ( 50/60 Hz), 16 A • Other: Compressed air or other gas 25 L/min 33 Confidential