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System Design and Verification of the Precession Electron Diffraction Technique Christopher S. Own Thesis defense 2005.07.13 Acknowledgements People L.D. Marks Wharton Sinkler Marks Group Arun Subramanian, Jim Ciston, Bin


  1. System Design and Verification of the Precession Electron Diffraction Technique Christopher S. Own Thesis defense · 2005.07.13

  2. Acknowledgements � People � L.D. Marks � Wharton Sinkler � Marks Group • Arun Subramanian, Jim Ciston, Bin Deng � Hitachi and JEOL support • Ken Eberly, Jim Poulos, Mike Kersker � Winfried Hill and Vasant Ramasubramanian � Shi-Hau Own � Funding � Fannie and John Hertz Foundation � UOP LLC, STCS, US DOE (Grant DE-FG02-03ER 15457)

  3. Overview Background I. Motivation � Precession Electron Diffraction (PED) � System Design II. Instrumentation � Verification III. Simulation � Theoretical models � Examples IV. Conclusions / Future Work V.

  4. I. Background

  5. Motivation: Routine Structural Crystallography Direct Starting Methods Diffraction structure Intensities model True Refinement Structure

  6. Direct Methods (DM) � In diffraction experiment we measure intensities Real space FT � (phase information lost) constraints (S 1 ) Φ = − φ Fourier space ( k ) F ( k ) exp( i ( k )) constraints (S 2 ) = 2 I ( k ) F ( k ) FT -1 Recovery Criterion � Recover phases to generate NO feasible scattering potential YES maps Observed Intensities Observed Intensities � Need good intensities to Feasible (assigned phases) recover correct phases Solution (Genetic Algorithm) � Else get false structure!

  7. Motivation (cont’d) � The crystallography workhorse: X-ray diffraction � Limitations for nanoscale characterization: • Too low S/N for small crystals, need synchrotron • Synchrotron: Cost / time restriction • Ring overlap (powder) • No imaging � Solution: Electron Diffraction (ED) � Simultaneous imaging/diffraction � EDX, EFTEM, etc… � Readily available / inexpensive

  8. Problem: Multiple Scattering � Terminology: X-rays: Kinematical Electrons: Dynamical λ = θ 2 d sin � Direct Methods requires good quality intensities (<15% error) z � ED is often too dynamical: � Want kinematical, but even thin specimens dynamical • Ultra-thin specimens Multiple scattering: impossible to make (except surfaces) � Error can be 1,000’s of %! Thickness matters! • Hindered routine electron crystallography.

  9. Electron Direct Methods can work! � Data can be kinematical � Thin specimens (surfaces) � Some dynamical data can work � Channeling (good projection) • Phase relationships preserved statistically � Pseudo-kinematical EDM • Also called intensity mapping • Assumes deviation from kinematical • Intensity relationships preserved • Powder, texture patterns � Precession

  10. Vincent-Midgley Precession Technique (PED) † � In theory: � Reduces multiple scattering (always off- φ zone) • Lower sensitivity to thickness � Reduces sensitivity to misorientation � “Quasi-kinematical” intensities result • May need correction factors (requires known structure factors) (Vincent & Midgley, Ultramicroscopy 1994.)

  11. Scan Specimen Non-precessed De-scan (Ga,In) 2 SnO 5 Intensities 412Å crystal thickness Conventional Precession Precession… Diffraction Pattern Diffraction Pattern Precessed (Diffracted amplitudes)

  12. (Excitation Error) Ewald Sphere Construction

  13. Problems and Questions � Previous studies: †(J. Gjonnes, et al., Acta Cryst A, 1998. K. Gjonnes, et al., Acta Cryst A, 1998. � R-factors ~ 0.3-0.4 † M. Gemmi, et al., Acta Cryst A, 2003.) � Precession was not well-understood � Can one just use intensities? � How to use correction factors if F g not known? • Are they correct? • Is geometry-only valid? � Our early experiments gave mixed results too � Why didn’t it work? � How can we make it work?

  14. II. System Design

  15. US patent application: “A hollow-cone electron diffraction system”. Application serial number 60/531,641, Dec 2004. The Design

  16. Generation II hardware

  17. = A ⋅ θ = s ⋅ θ x cos x cos 1 1 2 Optical Aberration = A ⋅ θ = − ⋅ θ y sin y s sin 1 1 2 [ ] ( ( ) ) = A ⋅ ⋅ θ + φ ⋅ θ Compensation x cos 3 cos 3 3 3 [ ] ( ( ) ) = A ⋅ ⋅ θ + φ ⋅ θ y cos 3 sin 3 3 3 = + ⋅ φ + + ⋅ φ + x out [( x x ) cos ( y y ) sin ] x 1 2 2 1 2 2 3 For forming = − + ⋅ φ + + ⋅ φ + y out [ ( x x ) sin ( y y ) cos ] y fine probe 1 2 2 1 2 2 3 2 1.5 1 0.5 0 -2 -1 0 1 2 -0.5 -1 2-fold 45° -1.5 rotation -2 2 1.5 1 0.5 0 -2 -1 0 1 2 -0.5 -1 -1.5 -2 3-fold, no rotation

  18. III. Verification Section Outline: � Investigate models � Multislice simulation � Comparison of correction factors (old and new) � Compare to experimental data � Suggested approach for novel structures

  19. Simulation parameters � φ = cone semi-angle 2 φ � 0 – 50 mrad typical � t = thickness t � ~20 – 50 nm typical � Explore: 4 – 150 nm � g = reflection vector � | g | = 0.25 – 1 Å -1 are structure-defining

  20. Multislice Simulation: A Correct Model

  21. Error analysis: F sim (t) – F kin (normalized) 10mrad 24mrad 75mrad 50mrad 0mrad Error Experimental dataset thickness g (Own, Sinkler, & Marks, in preparation.)

  22. (Ga,In) 2 SnO 4 data Kinematical Amplitudes Precession Intensities

  23. (Ga,In) 2 SnO 4 precession data: High-pass filtered amplitudes (Real Space) ∆ R (Å) Displacement (R neutron – R precession ): Sn1 0.00E+00 Sn2 0.00E+00 Sn3 6.55E-03 ∆ R mean < 4 pm In/Ga1 5.17E-02 In/Ga2 2.37E-03 Ga1 6.85E-02 (Sinkler, et al. J. Solid State Chem, 1998. Ga2 1.22E-01 Own, Sinkler, & Marks, in press.)

  24. (Own, Sinkler, & Marks, in preparation.) Global error metric: R 1 R-factor, (Ga,In) 2 SnO 4 0.8 0.7 0.6 ( ) 0.5 ∑ R-factor − F F 0.4 = exp sim R ∑ 0.3 1 F exp 0.2 Dynamical 0.1 Precession 0 0 250 500 750 1000 1250 1500 t (Å) Broad clear global minimum � R-factor = 0.118 � Experiment matches simulated known structure � Compare to > 0.3 from previous precession studies (unrefined!) � Accurate thickness determination: � Average t ~ 41nm (very thick crystal for studying this material) �

  25. t > 50 nm: needs correction How to use PED intensities � Treat like powder diffraction � Apply Lorentz-type dynamical correction factor to get true intensity: † ≈ = × true corrected exp I I C I g g Blackman g ⎛ ⎞ ⎜ ⎟ π ⎜ ⎟ ⎛ ⎞ t A ( ) g = ⎜ ⎟ , φ = − × g ⎜ ⎟ A C g t , g 1 ⎜ ⎟ ξ Blackman g A 2 ⎝ ⎠ 2 R ⎜ ⎟ g ( ) ∫ 0 g J 2 x dx ⎜ ⎟ 0 ⎝ ⎠ 0 *An approximation* † (K. Gjønnes, Ultramic, 1997. Geometry Dynamical M. Blackman, Proc. Roy. Soc., 1939.) correction correction

  26. Lorentz-only correction: Geometry information is insufficient F corr F kin Need structure factors to apply the correction!

  27. New Dynamical Two-beam Correction Factor ( ) − 1 ⎛ ⎞ π π 2 2 sin ts ( ) 1 ⎜ ⎟ ∫ φ = θ 2 eff ( ) C g , t , F d ⎜ ⎟ 2 beam g ξ 2 2 s ⎝ ⎠ g 0 eff � Sinc function altered by ξ g 1 = + 2 s s ξ eff 2 g � A function of structure factor F g π θ V cos ξ = c B � Some F g must be λ g F g known to use!

  28. t = 20 nm, ξ g = 25 nm

  29. C Blackman v. C 2beam ⎛ ⎞ ⎜ ⎟ ⎜ ⎟ ⎛ ⎞ A ( ) g ⎜ ⎟ , φ = − × g ⎜ ⎟ C g t , g 1 ⎜ ⎟ Blackman A ⎝ ⎠ 2 R ⎜ ⎟ g ( ) ∫ 0 J 2 x dx ⎜ ⎟ 0 ⎝ ⎠ 0 C Blackman approximates C 2beam ( ) − when |sinc| 2 is sufficiently integrated 1 ⎛ ⎞ π π 2 2 sin ts ( ) 1 ⎜ ⎟ ∫ φ = θ 2 eff ( ) C g , t , F d ⎜ ⎟ 2 beam g ξ 2 2 s ⎝ ⎠ g 0 eff

  30. C 2beam correction: t = 127 nm, φ = 75 mrad (No apparent g-preference)

  31. a priori correction: GITO ( 41 nm) Consider the limits of the Blackman formula Correction ⎛ ⎞ factor ⎜ ⎟ ⎜ ⎟ A = × g ⎜ ⎟ C Geom Blackman A ⎜ ⎟ g ( ) ∫ J 0 2 x dx ⎜ ⎟ ⎝ ⎠ 0 π t = A g ξ 2 g Corrected Intensities

  32. Try GITO Using intensities ( F g 2 ) w/ DM (Real Space) ∆ R (Å) Displacement (R neutron – R precession ): Sn1 0.00E+00 Sn2 0.00E+00 Sn3 6.55E-03 ∆ R mean < 4 pm In/Ga1 5.17E-02 In/Ga2 2.37E-03 Ga1 6.85E-02 (Sinkler, et al. J. Solid State Chem, 1998. Ga2 1.22E-01 Own, Sinkler, & Marks, in press.)

  33. Suggested PED flowchart

  34. IV. Examples La 4 Cu 3 MoO 12 Al 8 Si 40 O 96 Al 2 SiO 5 1. 2. 3.

  35. La 4 Cu 3 MoO 12 [001] I ntensities comparison Kinematical Intensities Conventional Diffraction PED intensities Intensities

  36. Proposed structure: highly ordered b = 10.98 Å � Homeotype of YAlO 3 � Rare earth hexagonal phase � Frustrated structure: a = 6.46Å doubling of cell along a-axis † � Maintains stoichiometry � Better R-factor if twinning model introduced in refinement † (Griend et al., JACS 1999.)

  37. PED solutions: disorder 5 Å Amplitude solution Intensity solution (high-pass filtered) (high-pass filtered)

  38. Al 8 Si 40 O 96 [001] (Mordenite): Thick (50 nm), poor projection characteristics Kinematical amplitudes PED intensities

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