SOFTWARE DESCRIPTION COSMA PULSE COSMA PULSE BENEFITS 7/19/18 - - PowerPoint PPT Presentation

SOFTWARE DESCRIPTION COSMA PULSE

COSMA PULSE BENEFITS

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Advanced Process Control

Enhanced functionality

ALL PARAMETERS CAN BE CONTROLLED AND PULSED

Advanced process editing

SET TO, RAMP TO AND PULSE FUNCTIONS

Short step times

10 ms DATA AQUISITION

+/-0,1%

ACCURACY

ON BIAS FINE TUNING

Cost effective upgrade

FOR CORIAL SYSTEMS INSTALLED AT CUSTOMERS’ SITES

PROCESS EDITING

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Intelligent process control, using not only the standard “SET to” and RAMP to” functions, but also an added “PULSE” function Control and Pulse of any process parameter (such as gas flow rate, RF and ICP power, working pressure, etc.), with a minimum pulsing period of 10 milliseconds

Edit, store, use, and duplicate process recipes with the COSMA Pulse unique user interface

PROCESS EDITING

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Show/close all the details of the pulsed parameters Show the pulsed parameters Mode: Pulsed Details of the pulsed parameter setting

PROCESS ADJUSTMENT

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All process parameters can be pulsed and adjusted during process execution

Real-time process adjustment Details of the pulsed parameter setting

PROCESS OPERATION

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Multiple user access rights

PASSWORD CONTROLLED LOGIN WITH DIFFERENT LEVELS OF USER ACCESS

Process reproducibility

TIGHT CONTROL AND MONITORING OF PROCESS STEPS

Multistep recipes

LOOPS WITH AUTOMATED TRANSITION TO THE NEXT PROCESS STEP BASED ON SIGNALS FROM END POINT DETECTORS

Real time process data display

ALL PROCESS PARAMTERS CAN BE MONITORED SIMULTANEOUSLY IN REAL TIME DURING PROCESS EXECUTION

COSMA PULSE APPLICATION #1 DRIE

DRIE OF SILICON

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Process Steps

CORIAL Bosch-like process has 3 steps

step 1 - Polymer deposition by C4F8 plasma step 2 - Polymer etching by SF6 plasma step 3 - Silicon etching with 20W of RF power, which was used to increase the silicon etching rate

To alternate between each step, COSMA pulse software is required for pulsing consecutively C4F8 gas flow, SF6 gas flow, LF and RF power

DRIE OF SILICON

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Advantages

Precise control of the etch profile, fast etch rates, and excellent etch uniformity

DRIE OF SILICON

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Performances

Feature size (µm) Etched depth (µm) Aspect ratio Etch rate (µm/min) Mask Selectivity (vs. mask) Ø250 Through wafer 1:2 > 3.0 SiO2 330 Ø100 515 1:5 > 2.9 PR 85 Ø20 280 1:14 > 1.5 SiO2 155 Ø5 180 1:35 > 1.0 SiO2 100

Results obtained with 100 mm wafer, 20% Si open area

COSMA PULSE APPLICATION #2 ATOMIC SCALE ETCHING

ATOMIC SCALE PROCESS REMINDER

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Process Steps

Applications of Atomic Scale Etching

Power and RF&MW electronics R&D, nanotechnology nm-scale IC technology… ADSORPTION STEP Formation of reactive monolayer PURGE STEP Evacuation of the excess adsorbent species DESORPTION STEP Exposure of the reactive monolayer to form volatile species PURGE STEP Cleaning the reactor of all species KEREN J. KANARIK et. al., Moving atomic layer etch from lab to fab, Solid State Technology 2014

ATOMIC SCALE ETCHING OF SILICON

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Process Steps Advanced tuning of RF pulsing (red) to control ion energy Independent and rapid pulsing of chlorine (blue) and argon (green) flows during adsorption and desorption steps The laser signal shows an etch rate of

1.68 Å/cycle

ATOMIC SCALE ETCHING OF SILICON

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Performances Si wafer before etching Roughness = 0.188 nm Si wafer after etching of 0.5 µm Roughness = 0.277 nm

ATOMIC SCALE ETCHING OF GAN

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Process Steps

CORIAL process steps for GaN recess etch

Process steps RF Power (W) Pressure (mT) Chemistry Pulsed parameters

Step 1 - Adsorption

10 25 Cl2 Ar Chlorine

Step 2 - Purge

10 Ar

Step 3 - Desorption

100 10 Ar RF power

Weak RF plasma activation of Cl2 is used to enhance chlorination

• f GaN surface

Desorption of by-products is achieved in RIE mode by Ar+

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ATOMIC SCALE ETCHING OF GAN

Process Steps

CORIAL process steps for GaN recess etch

ATOMIC SCALE ETCHING OF GAN

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Performances 2’’ Sapphire wafer AlxGa1-xN / AlxGa1-xN <Si> / AlN stack GaN 50 A 1.2 µm

Recess etch

CORIAL process performances

Process Total process duration (min) Number of cycles Period (s) Etch depth (Å) Etch rate (Å/cycle) Etch rate (Å/min) ALE GaN recess etch 20 300 6 50 0.4 4

ATOMIC SCALE ETCHING OF GAN

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Performances No deterioration of the drain current is

• btained after ALE-like recess etching

HEMT Transistor performances before (left curves) and after recess etching (right curves)

0,05 0,1 0,15 0,2

• 10
• 7,5
• 5
• 2,5

Transconductance (Sm/mm) Vgs (V)

0,2 0,4 0,6 0,8

• 10
• 7,5
• 5
• 2,5

Drain current (A) Vgs (V) Higher transconductance is obtained

COSMA PULSE APPLICATION #3 TIME-MULTIPLEXED DEPOSITION

TIME-MULTIPLEXED DEPOSITION OF SIO2

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Process Steps

4-step process

step 1 – a-Si deposition by SiH4/Ar chemistry step 2 - Purge step 3 – a-Si oxidation by N2O step 4 – Purge

Precursor a-Si deposition Purge N2O plasma

• xidation

Purge

TIME-MULTIPLEXED DEPOSITION OF SIO2

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Process Steps

a-Si deposition 2.5s

Period 10s

N2O oxidation 5.5s Time (s) 2,5 3,5 9 10 Purge 1s

RF N2O SiH4

0,1 3 500 1000 50

Ar

Purge 1s

Parameter: RF Mode: Pulsed Value 1: 100 Value 2: 50 Period: 10 000 ms Cycle: 55% Delay: 3 500 ms Parameter: SiH4 Mode: Pulsed Value 1: 3 Value 2: 0,1 Period: 10 000 ms Cycle: 25% Delay: 0 ms Parameter: Ar Mode: Pulsed Value 1: 500 Value 2: 1000 Period: 10 000 ms Cycle: 55% Delay: 3 500 ms Parameter: N2O Mode: Pulsed Value 1: 500 Value 2: 0,1 Period: 10 000 ms Cycle: 55% Delay: 3 500 ms

100

TIME-MULTIPLEXED DEPOSITION OF SIO2

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Performances

Process steps RF Power (W) Ar (sccm) N2O (sccm) SiH4 (sccm) Time (s) Deposition rate (Å/cycle) Deposition rate (nm/min) R.I. Uniformity

• n 4”

(±%) Stress (Mpa)

Step 1 - Precursor

50 1000 0.1 3 2,5 7 4,2 1,465 0,7

• 227

Step 2 - Purge

50 1000 0.1 0,1 1

Step 3 - Oxidation

100 500 500 0,1 5,5

Step 4 - Purge

50 1000 0.1 0,1 1