SOFTWARE DESCRIPTION COSMA PULSE
COSMA PULSE BENEFITS 7/19/18 Advanced Process Control Enhanced functionality ALL PARAMETERS CAN BE CONTROLLED AND PULSED Short step Cost times effective 10 ms upgrade DATA AQUISITION FOR CORIAL SYSTEMS INSTALLED AT CUSTOMERS’ Advanced SITES process +/-0,1% editing ACCURACY ON BIAS FINE TUNING SET TO, RAMP TO AND PULSE FUNCTIONS COSMA Pulse 4
PROCESS EDITING 7/19/18 Intelligent process control, using not only the standard “SET to” and RAMP to” functions, but also an added “PULSE” function Control and Pulse of any process parameter (such as gas flow rate, RF and ICP power, working pressure, etc.), with a minimum pulsing period of 10 milliseconds Edit, store, use, and duplicate process recipes with the COSMA Pulse unique user interface COSMA Pulse 5
PROCESS EDITING 7/19/18 Details of the pulsed parameter setting Show/close all the details of the Mode: Pulsed pulsed parameters Show the pulsed parameters COSMA Pulse 6
PROCESS ADJUSTMENT 7/19/18 All process parameters can be pulsed and adjusted during process execution Details of the pulsed parameter setting Real-time process adjustment COSMA Pulse 7
PROCESS OPERATION 7/19/18 Multiple user access rights PASSWORD CONTROLLED LOGIN WITH DIFFERENT LEVELS OF USER ACCESS Real time process Process data reproducibility TIGHT CONTROL AND MONITORING OF PROCESS display STEPS ALL PROCESS PARAMTERS CAN BE MONITORED SIMULTANEOUSLY IN REAL TIME DURING PROCESS EXECUTION Multistep recipes LOOPS WITH AUTOMATED TRANSITION TO THE NEXT PROCESS STEP BASED ON SIGNALS FROM END POINT DETECTORS COSMA Pulse 8
COSMA PULSE APPLICATION #1 DRIE
DRIE OF SILICON 7/19/18 Process Steps CORIAL Bosch-like process has 3 steps step 1 - Polymer deposition by C4F8 plasma step 2 - Polymer etching by SF6 plasma step 3 - Silicon etching with 20W of RF power, which was used to increase the silicon etching rate To alternate between each step, COSMA pulse software is required for pulsing consecutively C4F8 gas flow, SF6 gas flow, LF and RF power COSMA Pulse 10
DRIE OF SILICON 7/19/18 Advantages Precise control of the etch profile, fast etch rates, and excellent etch uniformity COSMA Pulse 11
DRIE OF SILICON 7/19/18 Performances Feature size Etched depth Etch rate Selectivity Aspect ratio Mask (µm) (µm) (µm/min) (vs. mask) Ø250 Through wafer 1:2 > 3.0 SiO2 330 Ø100 515 1:5 > 2.9 PR 85 Ø20 280 1:14 > 1.5 SiO2 155 Ø5 180 1:35 > 1.0 SiO2 100 Results obtained with 100 mm wafer, 20% Si open area COSMA Pulse 12
COSMA PULSE APPLICATION #2 ATOMIC SCALE ETCHING
ATOMIC SCALE PROCESS REMINDER 7/19/18 Process Steps ADSORPTION STEP Formation of reactive monolayer PURGE STEP PURGE STEP Evacuation of Cleaning the the excess reactor of all adsorbent species species DESORPTION STEP Exposure of the KEREN J. KANARIK et. al., Moving atomic layer etch from lab to fab, Solid reactive State Technology 2014 monolayer to form volatile species Applications of Atomic Scale Etching Power and RF&MW electronics R&D, nanotechnology nm-scale IC technology… COSMA Pulse 14
ATOMIC SCALE ETCHING OF SILICON 7/19/18 Process Steps Advanced tuning of RF pulsing (red) to control ion energy The laser signal shows an etch rate of Independent and rapid pulsing of chlorine (blue) 1.68 Å/cycle and argon (green) flows during adsorption and desorption steps COSMA Pulse 15
ATOMIC SCALE ETCHING OF SILICON 7/19/18 Performances Si wafer before etching Si wafer after etching of 0.5 µ m Roughness = 0.188 nm Roughness = 0.277 nm COSMA Pulse 16
ATOMIC SCALE ETCHING OF GAN 7/19/18 Process Steps CORIAL process steps for GaN recess etch RF Power Pressure Pulsed Process steps Chemistry (W) (mT) parameters 10 Cl2 Step 1 - Adsorption 25 Chlorine Ar Step 2 - Purge 0 10 Ar Step 3 - Desorption 100 10 Ar RF power Weak RF plasma activation of Cl2 is used to enhance chlorination of GaN surface Desorption of by-products is achieved in RIE mode by Ar+ COSMA Pulse 17
ATOMIC SCALE ETCHING OF GAN 7/19/18 Process Steps CORIAL process steps for GaN recess etch COSMA Pulse 18
ATOMIC SCALE ETCHING OF GAN 7/19/18 Performances Recess etch GaN 50 A CORIAL process performances Al x Ga 1-x N / Al x Ga 1-x N <Si> 1.2 µm / AlN stack 2’’ Sapphire wafer Total process Number of Period Etch depth Etch rate Etch rate Process duration cycles (s) (Å) (Å/cycle) (Å/min) (min) ALE GaN recess 20 300 6 50 0.4 4 etch COSMA Pulse 19
ATOMIC SCALE ETCHING OF GAN 7/19/18 Performances HEMT Transistor performances before (left curves) and after recess etching (right curves) 0,2 0,8 Transconductance (Sm/mm) Drain current (A) 0,15 0,6 0,1 0,4 0,05 0,2 0 0 -10 -7,5 -5 -2,5 0 -10 -7,5 -5 -2,5 0 Vgs (V) Vgs (V) No deterioration of the drain current is Higher transconductance is obtained obtained after ALE-like recess etching COSMA Pulse 20
COSMA PULSE APPLICATION #3 TIME-MULTIPLEXED DEPOSITION
TIME-MULTIPLEXED DEPOSITION OF SIO2 7/19/18 Process Steps Precursor a-Si 4-step process deposition step 1 – a-Si deposition by SiH 4 /Ar chemistry step 2 - Purge Purge Purge step 3 – a-Si oxidation by N 2 O step 4 – Purge N 2 O plasma oxidation COSMA Pulse 22
TIME-MULTIPLEXED DEPOSITION OF SIO2 7/19/18 Process Steps Period 10s Parameter: SiH 4 Parameter: Ar N 2 O oxidation 5.5s Mode: Pulsed Mode: Pulsed a-Si deposition 2.5s Purge 1s Purge 1s Value 1: 3 Value 1: 500 Value 2: 0,1 Value 2: 1000 Period: 10 000 ms Period: 10 000 ms 1000 Cycle: 25% Cycle: 55% Ar Delay: 0 ms Delay: 3 500 ms N 2 O Parameter: N 2 O Parameter: RF 500 Mode: Pulsed Mode: Pulsed Value 1: 500 Value 1: 100 100 Value 2: 0,1 Value 2: 50 RF Period: 10 000 ms Period: 10 000 ms Cycle: 55% Cycle: 55% 50 SiH 4 Delay: 3 500 ms Delay: 3 500 ms 3 0,1 0 9 2,5 3,5 10 Time (s) COSMA Pulse 23
TIME-MULTIPLEXED DEPOSITION OF SIO2 7/19/18 Performances Deposition Deposition Uniformity RF Power Ar N2O SiH4 Time Stress Process steps rate rate R.I. on 4” (W) (sccm) (sccm) (sccm) (s) (Mpa) (Å/cycle) (nm/min) (±%) Step 1 - 50 1000 0.1 3 2,5 Precursor Step 2 - Purge 50 1000 0.1 0,1 1 7 4,2 1,465 0,7 -227 Step 3 - 100 500 500 0,1 5,5 Oxidation Step 4 - Purge 50 1000 0.1 0,1 1 COSMA Pulse 24
Recommend
More recommend
