Silicon Carbide for Power Semiconductor Devices Philippe Godignon - - PDF document

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Silicon Carbide for Power Semiconductor Devices Philippe Godignon - - PDF document

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Wide band-gap Power Semiconductor Devices Silicon Carbide for Power Semiconductor Devices Philippe Godignon Centro Nacional de Microelectrnica, CNM CNM-CSIC, Campus Universidad Autnoma de Barcelona, 08193 Bellaterra, Barcelona, Spain

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Silicon Carbide for Power Semiconductor Devices

Philippe Godignon Centro Nacional de Microelectrónica, CNM

CNM-CSIC, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra, Barcelona, Spain

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Outline

  • Introduction
  • SiC properties
  • 10V-300V: SiC or Si
  • 300V-3500V : Unipolar devices:
  • > 3500V: Bipolar devices ?
  • Future Trends
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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

What is Driving Future Power Electronics?

  • Power electronics holds the key to annual energy savings of

around $400 billion!

  • Lightweight, high performance products such as mobile

computing, home entertainment and power tools

  • High efficiency, high power density electric drives in

products such as air conditioning

  • Proliferation of automotive and aerospace electronic systems
  • Increased use of power electronics in transmission and

distribution systems

  • Energy storage systems
  • …

Introduction

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

  • Increased power densities
  • Lower electromagnetic emissions
  • Plug-and-go systems
  • Extreme operating environments
  • Higher levels of integration
  • Lower cost

Introduction

Moore law for power devices: Doubling frequency and power density every 4.5 years

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Wide band-gap Power Semiconductor Devices

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  • Si devices are generally limited to operation at junction

temperatures in the range of 200ºC.

  • Si power devices not suitable at very high frequencies.
  • SiC, GaN and Diamond offer the potential to overcome both the

temperature, frequency and power management limitations of Si.

  • At present, SiC is considered to have the best trade-off between

properties and commercial maturity with considerable potential for both HTE and high power devices.

Why SIC ?

Introduction

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5.7 20 5.6 × 107 3 × 107 1800 2200 5.6 Diamond 11.1 1.1 107 150 250 2.26 GaP 8.9 1.3 5 × 106 2 × 107 350 1000 3.39 GaN 10 5 3 × 106 2 × 107 115 950 3.2 4H - SiC 9.7 5 2.5 × 106 2 × 107 90 415 2.9 6H – SiC 9.6 5 2 × 106 2.5 × 107 45 1000 2.3 3C – SiC 12.9 0.54 4×105 2 × 107 400 8500 1.4 GaAs 11.7 1.3 3×105 107 450 1450 1.12 Si εr λ (W/cm.K) Ec (V/cm ) vsat (cm/s) µp (cm²/V.s) µn (cm²/V.s) Eg (eV) @300K Material

Physical properties of various semiconductors for power devices

Why SIC ?

Introduction

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Wide band-gap Power Semiconductor Devices

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5.7 20 5.6 × 107 3 × 107 1800 2200 5.6 Diamond 11.1 1.1 107 150 250 2.26 GaP 8.9 1.3 5 × 106 2 × 107 350 1000 3.39 GaN 10 5 3 × 106 2 × 107 115 950 3.2 4H - SiC 9.7 5 2.5 × 106 2 × 107 90 415 2.9 6H – SiC 9.6 5 2 × 106 2.5 × 107 45 1000 2.3 3C – SiC 12.9 0.54 4×105 2 × 107 400 8500 1.4 GaAs 11.7 1.3 3×105 107 450 1450 1.12 Si εr λ (W/cm.K) Ec (V/cm ) vsat (cm/s) µp (cm²/V.s) µn (cm²/V.s) Eg (eV) @300K Material

Physical properties of various semiconductors for power devices

Why SIC ?

Introduction

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Wide band-gap Power Semiconductor Devices

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5.7 20 5.6 × 107 3 × 107 1800 2200 5.6 Diamond 11.1 1.1 107 150 250 2.26 GaP 8.9 1.3 5 × 106 2 × 107 350 1000 3.39 GaN 10 5 3 × 106 2 × 107 115 950 3.2 4H - SiC 9.7 5 2.5 × 106 2 × 107 90 415 2.9 6H – SiC 9.6 5 2 × 106 2.5 × 107 45 1000 2.3 3C – SiC 12.9 0.54 4×105 2 × 107 400 8500 1.4 GaAs 11.7 1.3 3×105 107 450 1450 1.12 Si εr λ (W/cm.K) Ec (V/cm ) vsat (cm/s) µp (cm²/V.s) µn (cm²/V.s) Eg (eV) @300K Material

Physical properties of various semiconductors for power devices

Why SIC ?

Introduction

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Blocking voltage 1000 V Chipsize 1 cm2

10 20 30 40 50 1 2 3 4 5

Current (A) Voltage (V) Losses at 50A P = U x I

Si-MOSFET

500W

Potential of the CoolMOS Technology

200W

SiC xFET 25W Si- Thyristor

50W

Si- IGBT (low loss)

75W

  • spec. Resistance

achieved with Infineon VJFET (fast topology) 2004

Introduction

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006 100 1000 10000 1 10 100 1000

SIAFET (Kansai/Cree) SIAFET (Kansai/Cree) TI-JFET (Rutgers) SEJFET (Kansai/Cree) VJFET (Siemens) TI-JFET (Rutgers) VJFET (Siemens) VJFET (Siemens) TI-JFET (Rutgers)

Specific on-resistance (mOhmcm2) VBR (V)

DMOSFET (Cree) DMOSFET (Cree) SEMOSFET (Kansai/Cree) trench MOSFET (Purdue) trench MOSFET (Purdue) DMOSFET (Siemens) DMOSFET (Siemens) trench ACCUFET (Purdue) trench ACCUFET (DENSO)

Si limit 4H-SiC limit

Introduction

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SiC Material

  • Achievements in SiC bulk material growth and in SiC process technology.

− 3” SiC wafers with very low micropipe density (0.75 cm-2) available in the market → high yield manufacturing process of large area SiC power devices. − 4” SiC wafers are already in the market and it is expected that the very low micropipe density target will be achieved soon. − 6” SiC wafers in 2008

  • GaN: 2” wafers (poor quality, high cost)

Diamond: 1cm x 1cm samples

Introduction

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Wide band-gap Power Semiconductor Devices

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Introduction

CNM large area diodes 2.56 < diodes area < 25 mm2 Wafer ∅ 75 mm SiCED-Infineon commercial JFETs 1 < JFETs area < 1.25 mm2 Wafer ∅ 75 mm

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Wide band-gap Power Semiconductor Devices

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Schottky diodes, MESFETs

Commercially available SiC devices and testing samples

Schottky diodes JFETs testing samples JFETs and hybrid cascode testing samples

Advanced R&D programs

DENSO Kansai Electric Power (Kepco) Acreo Rockwell United Silicon Carbide Inc

Introduction

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

10V – 200V : Schottky, MOSFET 300V-1000V: PiN MOSFET/CoolMOS Fast switching IGBT 1200V – 6500V PiN IGBT Gate control GTO High current > 6500V Serie connections

Si power devices

Introduction

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Wide band-gap Power Semiconductor Devices

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Low voltage range:

10V -200V

Unipolar devices: 10V-200V

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Wide band-gap Power Semiconductor Devices

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  • Difficult to compete with Si
  • High temperature applications could be

covered by SOI

  • High power - high frequency RF

devices in SiC and GaN

  • Low on resistance GaN switch

Unipolar devices: 10V-200V

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Medium voltage range:

300V – 3500V SiC Unipolar devices

Unipolar devices: 300V-3500V

  • SMPS
  • Motor integrated drives
  • Hybrid cars (300-500V – 250C)
  • More electric aircraft (270-800V – 300C)
  • Space power applications
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Wide band-gap Power Semiconductor Devices

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SiC Schottky Diodes

  • SiC SBDs commercially available since 2001. They range from the

initial 300 V-10 A and 600 V- 6 A to 20 A and recently 1.2 kV.

20uA 20uA 1.6V@25ºC 1.7V@25ºC 1A 4A 200V- 600V Microsemi 20uA 4uA 10uA 1.5V@150ºC 2V@150ºC 1.7V@150ºC 10A 4A, 16A 300V 600V 600V Infineon 100uA 100uA 20uA 2V@175ºC 2.6V@150ºC 2.5V@150ºC 10A 5A 20A 600V 1200V 1200V CREE IR Vf IN VBR Manufac-

  • turer
  • SBDs can be advantageously

applied for blocking voltages up to 3.5kV.

  • Large area 3.5 kV – 10/20A

SBDs demonstrated at CNM The 25 mm2 SBDs exhibit a leakage current of 100 µA @ 2 kV. Unipolar devices: 300V-3500V

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Wide band-gap Power Semiconductor Devices

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100n 200n 300n

  • 5
  • 4
  • 3
  • 2
  • 1

1 2 3 100n 200n 300n

  • 5
  • 4
  • 3
  • 2
  • 1

1 2 3

PN-Si

25ºC SiC 100ºC SiC 140ºC SiC 150ºC SiC 175ºC SiC 180ºC SiC 190ºC SiC

Current (A) time (s) SBD time (s)

25ºC Si 50ºC Si 100ºC Si 120ºC Si 150ºC Si

150n 300n 450n 600n 750n 900n

  • 1

1 2 3 50 100 150 200 250 300

Current (A) time (s) Voltage (V)

1.2 kV SBD 1.2 kV PN-Si T = 20ºC

1.2kV Schottky

Unipolar devices: 300V-3500V

HT package from Semelab

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Wide band-gap Power Semiconductor Devices

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Unipolar devices: 300V-3500V

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Wide band-gap Power Semiconductor Devices

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4.5kV Si IGBT + SiC Schottky module

1 2 3 4 5 6 4 8 12 16 26 52 78 104

JF(A) (per die) IF(A) (module)

VF(V)

IF (20ºC) IF (125ºC)

Unipolar devices: 300V-3500V

3.5kV: a limit for SiC Schottky diodes

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SiC Junction Barrier Schottky diode

  • Mixed Schottky diode + PiN diode:

The reverse leakage well maintained closer to the PiN diode level but showing forward current densities reasonably lower (20-30%) than those of the SBDs. In forward mode at high temperature, the bipolar mode allows a moderate current decreases unlike in pure Schottky.

Unipolar devices: 300V-3500V

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Wide band-gap Power Semiconductor Devices

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SiC Junction Barrier Schottky diode

Unipolar devices: 300V-3500V

S = 2.56 mm2

  • 1.2kV - 6A packaged JBS
  • Good performance in temperature
  • Temperature behaviour depends of the JBS diode design
  • 10 A diodes have been realised

1 2 3 4 5 10 15 195 391 586

200ºC 25ºC

IA (A) VAK (V) JA (A.cm-2)

25ºC 200ºC

Design 2/3 Design 3/4

1 2 3 4 5 10 15 195 391 586 200ºC IA (A) VAK (V) JA (A.cm-2) 25ºC

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Wide band-gap Power Semiconductor Devices

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2500 5000 10p 100p 1n 10n 100n 1µ IK (A) VKA (V)

D1 JBS A : 0.64 mm

2

D2 JBS A : 0.16 mm

2

D3 Schottky A : 0.16 mm

2

Reverse characteristics of the 4H-SiC JBS

  • f various areas fabricated at CNM.

100n 200n 300n 400n

  • 5

5 10

T = 25ºC T = 100ºC T = 200ºC T = 300ºC JBS : LN = 4 µm, LP = 3 µm

IA (A) time (s) Turn-off current waveforms of the JBS diode (2.56 mm2, Ln=4µm, Lp=3µm) at different temperatures.

SiC Junction Barrier Schottky diode

Unipolar devices: 300V-3500V

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

  • Interest in reverse mode (lower leakage current +

avalanche mode operation)

  • Interest at high temperature: on-state is lower than

equivalent Schottky at 200ºC

  • Interest for its surge current capability
  • Interest for the 2.5-5kV range compared to pure Schottky
  • Problem of forward mode degradation (Stacking faults) ??

SiC Junction Barrier Schottky diode

Unipolar devices: 300V-3500V

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

SiC Junction Barrier Schottky diode

New generation of Infineon “Schottky“ diodes

Unipolar devices: 300V-3500V

  • Interest in reverse mode (lower leakage current +

avalanche mode operation)

  • Interest at high temperature: on-state is lower than

equivalent Schottky at 200ºC

  • Interest for its surge current capability
  • Interest for the 2.5-5kV range compared to pure Schottky
  • Problem of forward mode degradation (Stacking faults) ??
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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

SiC Power Switches

Unipolar devices: 300V-3500V

Basic types of power switching devices MOSFET JFET

  • potential in SiC very high
  • fast and low loss devices

possible

  • technological maturity

achieved

  • applications with high volume

already today visible

  • potential for SiC
  • nly for very high Vbr (> 4 ... 10...kV)

Reasons :

  • 1. Band gap approx. 3eV

high threshold (IGBT, SCR , BJT)

  • 2. P-Type acceptors with Ea >200meV

high p-resistivity low current gain

unipolar bipolar

number of pn Junctions even

BJT SCR

number of pn junctions Non even

IGBT

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Wide band-gap Power Semiconductor Devices

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Unipolar devices: 300V-3500V

5 10 15 20 20 40 60 80 100 120 140 160

VG: 0 .. -20 V, Step -2V

Current (A) Voltage (V)

150A

INFINEON - SICED 50A 1200V SiC VJFET Ron @25°C typ. 50mΩ

  • very low Ron-values possible
  • rugged Gate-structure
  • excellent short circuit capability
  • high temperatures possible
  • unconventional technology
  • normally on (?)
  • new gate control

JFET

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Unipolar devices: 300V-3500V

SiCED hybrid Si/SiC cascode electronic switch

1 2 3 4 5

2 4 6 8 10 12 14

B

Multiple "integrated" cascode Multiple "discrete" cascode Hybrid Si/SiC cascode Normally-off JFET Trench MOSFET

T u r n

  • f

f e n e r g y l

  • s

s e s ( J / c m

2

) * 1

  • 4

The hybrid Si/SiC cascode combination is the most efficient one

Single switch fly-back converter built using Si/SiC cascode

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Unipolar devices: 300V-3500V

SiCED hybrid Si/SiC cascode electronic switch

Compared to a COOLMOS-based converter, the SiC-based one offers the highest efficiency (about 90%) More Electric Aircraft: 3 phases PWM rectifier 10kW – 500KHz – 480V CoolMOS + SiC Schottky diodes : efficiency higher than 96% Volume: 30% power circuit + cooling / 30% electrolitic capacitors / 30% EMC filter All SiC sparse matrix converter: 100KHz – 1.5kW – efficiency 94% 1300V 4A SiCED Cascodes + 1200V 5A CREE Schottky diodes

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Wide band-gap Power Semiconductor Devices

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Wide band-gap Power Semiconductor Devices

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JFETs for Current Limiting for Power System Protection

  • Efficiency of both devices checked under working conditions: connected to

the mains.

  • The current limiter is plugged in series with the power supply and the load

(230V/5w bulbs).

  • SiC VJFET experimental response to a short-circuit.

Unipolar devices: 300V-3500V

CNM VJFET

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Fast current stabilisation : 1.4 µs

Short circuit (SC) (SC)

Short circuit protection demonstration :Transient wave form (measurements)

Unipolar devices: 300V-3500V

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Wide band-gap Power Semiconductor Devices

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Unipolar devices: 300V-3500V

2D-Directional current limiter made of two devices monothically integrated

INTEGRATION

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Wide band-gap Power Semiconductor Devices

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Unipolar devices: 300V-3500V

1 2 3 4 5 6 7 8 9 10 50m 100m 150m 200m 250m 300m

TJ=190°C RT

Symbole : JFET Line : Sensing Pad

IDS (A) VDS (V)

0,0 1,1m 2,2m 3,3m 4,4m 5,5m 6,6m

Current sensor reflect perfectly the main current of the JFET Current sensor can be also used as temperature sensor

2D-Directional current limiter made of two devices monothically integrated Current sensor integrated with VJFET

INTEGRATION

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Wide band-gap Power Semiconductor Devices

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Unipolar devices: 300V-3500V

  • Simple planar structrue
  • Voltage gate control
  • Extensively used in Si technology
  • Normally off
  • Low channel mobility in SiC
  • High temperature operation ?
  • Gate reliability ?

MOSFET

CNM 3.5KV MOSFET

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Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

SiC Power MOSFET

Unipolar devices: 300V-3500V

CREE: CREE:

  • 2.3KV-5A Ron=0.48 ohm (25ºC) 13.5mohm.cm2 , Ir=200uA

Cin=380pF, Cout=100pF, reverse transfer C=19pF (Vgs=0, Vds=25V, 1MHz) Infineon Infineon: :

  • 1200V-10A, Ron=0.27 ohm (25ºC) 12mohm.cm2

Denso: Denso:

  • 1200V-10A, 5 mohm.cm2 (25ºC),
  • 8.5mohm.cm2 (150ºC)
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Wide band-gap Power Semiconductor Devices

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1200 V MOSFET (SICED): Built-in Diode Turn-off

Unipolar devices: 300V-3500V

13,90 13,95 14,00 14,05 14,10 200 400 600

  • 40
  • 30
  • 20
  • 10

10 20 30 40

Drain Source Voltage (V) T im e (µs) Reverse Current (A)

di/dt = 850 A/µs Tcase = 125°C Qrr = 370 nC

(COOLMOS: 15 µC)

Qrr

SiC-MOSFET Halfbridge

SiCED

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Wide band-gap Power Semiconductor Devices

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> 3.5 KV > 3.5 KV

Bipolar Bipolar devices devices ? ?

Bipolar devices: 3500V-6500V

  • Utilities / Power distribution
  • Military platforms
  • Traction / Transport
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Wide band-gap Power Semiconductor Devices

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  • Main problem: reliability due to VF drift created by stacking

faults

SiC Rectifiers-PiN Diodes

Bipolar devices: 3500V-6500V

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Wide band-gap Power Semiconductor Devices

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  • Main problem: reliability due to VF drift created by stacking

faults

  • The state-of-the-art device is a Cree 4.5 kV 4H-SiC PiN diode:

− VF = 3.2 V at 180 A (100 A/cm2) − IR = 1 µA @ 4.5 kV − Chip area = 1.5 cm × 1.5 cm − At a dI/dt = 300 A/µs, the diode shows a reverse recovery time of 320 ns. − 57% of diodes show no measurable increase in VF following a 120 hours DC stress at 90 A.

SiC Rectifiers-PiN Diodes

Bipolar devices: 3500V-6500V

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  • Unlike Si BJTs, SiC BJTs do not suffer from secondary breakdown.
  • State-of-the-art BJT [S. Krishnaswami et al., ISPSD’2006, pp. 289-292]

− 4 kV, 10 A BJT − βmax = 34 − Chip area = 4.24 mm × 4.24 mm − IR =50 µA @ 4.7 kV − turn-on time = 168 ns @ RT − turn-off time = 106 ns @ RT

SiC Bipolar Transistor

It will take some time to industrialize HV bipolar SiC switches Bipolar devices: 3500V-6500V

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  • Unlike Si BJTs, SiC BJTs do not suffer from secondary breakdown.
  • State-of-the-art BJT [S. Krishnaswami et al., ISPSD’2006, pp. 289-292]

− 4 kV, 10 A BJT − βmax = 34 − Chip area = 4.24 mm × 4.24 mm − IR =50 µA @ 4.7 kV − turn-on time = 168 ns @ RT − turn-off time = 106 ns @ RT − β ⇓50% under forward stress: stacking faults in the base-emitter region

SiC Bipolar Transistor

It will take some time to industrialize HV bipolar SiC switches Bipolar devices: 3500V-6500V

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Wide band-gap Power Semiconductor Devices

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  • State-of-the-art SiC Thyristor

− 4.5 kV, 120 A SICGT (SiC Commutated Gate turn-off Thyristor) − Chip area 1cm x 1cm − IR < 5×10-6 A/cm2 @ 4.5 kV and 250ºC − turn-on time = 0.2 µs - turn-off time = 1.7 µs − Coated with a new high heat resistive resin capable of operating

at 400ºC

  • 110 kVA PWM 3 phase inverter demonstrator using six SICGT

modules (one SICGT + two 6 mm × 6 mm SiC pn diodes in a metal package). 2us turn-off time – No snubber

SiC Thyristor

Bipolar devices: 3500V-6500V

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Wide band-gap Power Semiconductor Devices

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Bipolar devices: 3500V-6500V

Example: Example: 4.5kV, 3-stage device ((1.15 Ω) 8,2mm² active SiC area in each stack, ECSCRM 02)

4 8 12 2 4 6 8 10

Vgs = 0V..6V Vgs=10V, 8V Current (A) Voltage (V)

1000 2000 3000 4000 5000 0,5 1,0 1,5 2,0

Current (mA) Voltage (V)

SiC JFET Multi-cascode

Semikron switch: 8KV – 10A – 2 ohms

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Wide band-gap Power Semiconductor Devices

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Bipolar devices: 3500V-6500V

SiC Bipolar-JFET

3 6 9 12 20 40 60 80 100 0.0 0.6 1.2 1.8 2.4 3.0 T=25°C T=150°C Current (A) Current-Density (A/cm

2)

Voltage (V)

4kV JFET

BIFET

70A/cm²

p- Drift region p Channel n-Collector 4H-SiC n+ Substrat

Gate Anode Anode Cathode

p+ p+ n n

  • +

Carrier lifetime in p - epilayers has to be increased well above 1 µs to reduce the forward voltage Tail current turn-off behaviour shows a long relaxation time increasing with temperature due to the not yet optimised gate control region.

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Wide band-gap Power Semiconductor Devices

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  • State-of-the-art SiC power MOSFET [S-H. Ryu, et al., ISPSD’2006]

10 kV, 5 A 4H SiC power DMOSFET − 100 µm thick n-type epilayer (6×1014 cm-3) − Thermally grown gate oxide, NO annealed − Peak effective channel mobility: 13 cm2/V.s − Active area: 0.15 cm2 − Ron = 111 mΩ.cm2 @ RT and VG = 15 V

10kV SiC Power MOSFET

Bipolar devices: 3500V-6500V

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Wide band-gap Power Semiconductor Devices

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Bipolar devices: 3500V-6500V

SiC IGBT ???

Problems of MOSFETS (Channel mobility, reliability) + Problems of Bipolar (current gain, degradation (stacking faults) + Problems of highly doped P substrate growth

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Wide band-gap Power Semiconductor Devices

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Bipolar devices: 3500V-6500V

SiC IGBT ???

Problems of MOSFETS (Channel mobility, reliability) + Problems of Bipolar (current gain, degradation (stacking faults) + Problems of highly doped P substrate growth September 2006: CREE 10kV P-channel IGBT

  • 3V + 20 mΩ x cm2
  • VF =3.9V at 10A instead of 4.4V for the VDMOS
  • Improvement of channel mobility and conductivity

modulation possible

slide-50
SLIDE 50

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

Conclusions

Question was: Will SiC be useful for power electronics ?

slide-51
SLIDE 51

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

Conclusions

Question was: Will SiC be useful for power electronics ? Question is: When SiC will enter in power electronic ?

slide-52
SLIDE 52

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

Conclusions

Question was: Will SiC be useful for power electronics ? Question is: When SiC will enter in power electronic ?

Source: ECPE “Sic User Forum” march 2006 – Complete presentation available

slide-53
SLIDE 53

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

Conclusions

Question was: Will SiC be useful for power electronics ? Question is: When SiC will enter in power electronic ?

Source: ECPE “Sic User Forum” march 2006 – Complete presentation available

Expected roadmap: > 3.5 KV 1 cm2 10kV IGBT and PiN Diode chips affordable for prototypes will be available by 2008 Production of degradation-free bipolar SiC devices by 2009 Stabilised production grade SiC devices available in 2010

slide-54
SLIDE 54

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

SiC rectifiers

  • Schottky and now JBS diodes are commercially available up to

1.2 kV.

  • PiN diodes will be only relevant for BV over 3kV.
  • Need to overcome its reliability problem (forward

voltage drift) before commercialisation

Conclusions

slide-55
SLIDE 55

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

SiC Switches

  • Commercialization of the cascode pair (a high-voltage,

normally-on SiC JFET + a low-voltage Si MOSFET).

  • BJTs/Darlingtons are promising, they also suffer from

reliability problems.

  • A normally-off SiC switch is expected. It could be the SiC

MOSFET (<5kV) or the SiC IGBT (>5kV).

  • A normally-off SiC power transistor commercially available

within next two years in the BV range of 600V-1200V.

Conclusions

slide-56
SLIDE 56

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

Conclusions

0.8um 3.2um 1um 150um

SiC MEMS Higher young modulus (x3) Higher yield strength (x3)

slide-57
SLIDE 57

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Future Trends

Conclusions

In-vivo measurement of impedance and pH of tissues in organs

SiC advantages for biomedical devices

Biocompatibility – higher hardness – higher resistivity transparency

6H-SiC

slide-58
SLIDE 58

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Conclusions

Conditions affecting the market volume for SiC power devices: Technical advantages and realised device performance Improved system efficiency by using SiC power devices Higher device costs (mainly dominated by substrate costs) New packaging development (material, technology & reliability) Application of new circuit concepts Silicon answers to the challenges of SiC (CoolMOS; Trench IGBT…)

The development of future power electronics with higher power densities will cause an increasing market penetration of SiC power devices.

slide-59
SLIDE 59

Wide band-gap Power Semiconductor Devices

SAAIE’06, Gijón , 15th September 2006

Barcelona Barcelona September September 7 7th

th – – 11

11th

th 2008

2008

ECSCRM 2008

7 7th

th European Conference

European Conference

  • n Silicon Carbide and
  • n Silicon Carbide and

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