https://ntrs.nasa.gov/search.jsp?R=20150023096 2018-05-07T09:26:07+00:00Z High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration Karin E. Bozak, Luis R. Piñero, Robert J. Scheidegger, Michael V. Aulisio, and Marcelo C. Gonzalez NASA Glenn Research Center, Cleveland, Ohio Arthur G. Birchenough Vantage Partners LLC, Cleveland, OH 44142 AIAA Propulsion & Energy Conference, 27-29 July 2015 Orlando, Florida 1
Outline • Introduction • Design Overview • Design Specifications • Test Setup • Performance Results • Forward Work • Conclusion • Acknowledgements 2
Introduction • NASA’s Space Technology Mission Directorate (STMD) Game Changing Development (GCD) Program was focused on developing a high-power, high-voltage Solar Electric Propulsion (SEP) system to revolutionize future missions requiring moving cargo and humans beyond low earth orbit. A 300-kilowatt spacecraft concept for human exploration of Mars 3
Introduction • In support of the STMD GCD, NASA Glenn Research Center (GRC) and the Jet Propulsion Laboratory (JPL) were tasked with demonstrating a high-power electric propulsion string. – Hall Effect Thruster Technology Demonstration Unit – High Input Voltage Brassboard Power Processing Unit (PPU) • This presentation focuses on the design, integration, and demonstration of the brassboard PPU. – The brassboard PPU leverages previous design work of a breadboard discharge supply with Silicon Carbide (SiC) power switching devices. 4
Introduction • Today, STMD is still developing and demonstrating innovative in-space propulsion technologies. • A proposed SEP Technology Demonstration Mission would use technologies developed under the GCD program to support the design and flight of a SEP spacecraft. – 50-kW class SEP spacecraft – Electric propulsion for primary in-space propulsion 5
Design Overview Hall Effect Thruster PPU 6
Design Overview 7
Design Specifications Maximum Output Output Regulation Line/Load Output Voltage Current Ripple Mode Regulation Power Range Range ≤ 5% peak - Discharge peak of ≤ 2% 15 kW 300-400 VDC 37.5-50 ADC Voltage Supply regulated parameter ≤ 5% peak - Inner Magnet and Outer peak of ≤ 2% 200 W 2-20 VDC 1-10 ADC Current Magnet regulated Supplies parameter ≤ 5% peak - peak of ≤ 2% Heater Supply 324 W 6-36 VDC 3-9 ADC Current regulated parameter ≤ 5% peak - peak of ≤ 2% Keeper Supply 90 W 10-30 VDC 1-3 ADC Current regulated parameter 8
Power Supply Design Switching Description Topology Control Frequency Two 7.5 kW Full-bridge PWM based on power supply converter with peak and modules with paralleled SiC average current Discharge Supply the outputs MOSFETS and a 30 kHz control and an connected in single bridge outer voltage parallel rectifier with SiC control loop externally Schottky diodes Auxiliary Supplies Four separate PWM based on (Inner power Full-bridge peak and Electromagnet, supplies; converter with average current 60 kHz Outer modular silicon control Electromagnet, circuit board MOSFETs Heater, and Keeper) designs 9
Control and Filter Design • Master Control Board – Communication and control interface between the individual power supplies and the System Control Board (SCB) – Receives analog and digital commands from the SCB and analog and digital telemetry from the power modules and input filters – Generates PWM synchronization signals and the ignitor pulse command • System Control Board – Provides a control interface between the PPU, the thruster propellant feed system, and the flight system – Currently under development at JPL • Input Filters – Separate filters for each input power bus – Each filter consists of a differential low-pass stage and a common- mode inductor 10
Test Brassboard SiC Power Processing Unit Setup + + Discharge Module #2 - V - Discharge + Resistive Load Bank + - Discharge Module #1 - + + Outer Magnet Supply + Outer - V - Magnet - + + Inner Magnet Supply + Inner - V Auxiliary - Magnet - Resistive + + Load Bank + Heater Supply - V Heater - - + + + Keeper Supply - V Keeper - - + High Voltage + + V - Power Supply - - Input Filter Module + + Low Voltage + V - KEY Power Supply - - Low Voltage Power Control Module High Voltage Power Status and Control & Command Cold Plate Telemetry Filter Telemetry Chiller SCB Hardware Circulation Loop Simulator Digital Voltage V Meter Chiller Current Shunt and SCB PC Ammeter Graphical User 11 Interface
Test Setup • All of the instrumentation used for performance measurements during ambient testing was calibrated. • Resistive load banks were used to simulate the thruster loads for both the ambient and vacuum testing. 12
Test Setup Thermal Laptop Brassboard PPU Cold Plate Chiller 13
Test Setup Data Logger Aux. Load Bank Oscilloscope Calibrated Digital Multimeters Thermocouple Wires Brassboard PPU 14
Test Setup Power Supplies Discharge Load Bank System Control Board Simulator 15
Test Setup Data Collection Flags Telemetry Enable Switch Set Points 16
Test Setup KEY A: GRC Vacuum Facility 8 (VF-8) B: HP-300V-PPU C: Cooling Plate D: Test Table E: Tank Feedthroughs A E • Vacuum tank pressure B was controlled by a C D separate facility control system to ≤ 10 -5 Torr 17
Performance Results SiC PPU Overall Efficiency vs. Output Power: Nominal Input 98.5% 97.94% 98.0% 97.67% 97.56% Efficiency, % 97.5% 97.32% 300 Vin to 300 Vout 97.04% 300 Vin to 400 Vout 97.0% 96.85% 300 Vin to 500 Vout 96.71% 96.57% 96.61% 96.5% 96.0% 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power, kilowatts 𝐹𝑔𝑔𝑗𝑑𝑗𝑓𝑜𝑑𝑧 = (𝐸𝑗𝑡𝑑ℎ𝑏𝑠𝑓 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐵𝑣𝑦𝑗𝑚𝑏𝑠𝑧 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐼𝑝𝑣𝑡𝑓𝑙𝑓𝑓𝑞𝑗𝑜 𝑄𝑝𝑥𝑓𝑠 ) (𝑀𝑝𝑥 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢 + 𝐼𝑗ℎ 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢) 18
Performance Results SiC PPU Overall Efficiency vs. Output Power: 300 Vout 98.5% 98.0% Efficiency, % 97.5% 250Vin to 300 Vout 270 Vin to 300 Vout 96.98% 96.94% 97.0% 300 Vin to 300 Vout 96.84% 330 Vin to 300 Vout 96.53% 96.5% 96.48% 96.41% 96.0% 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power, kilowatts 𝐹𝑔𝑔𝑗𝑑𝑗𝑓𝑜𝑑𝑧 = (𝐸𝑗𝑡𝑑ℎ𝑏𝑠𝑓 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐵𝑣𝑦𝑗𝑚𝑏𝑠𝑧 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐼𝑝𝑣𝑡𝑓𝑙𝑓𝑓𝑞𝑗𝑜 𝑄𝑝𝑥𝑓𝑠 ) (𝑀𝑝𝑥 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢 + 𝐼𝑗ℎ 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢) 19
Performance Results SiC PPU Overall Efficiency vs. Output Power: 400 Vout 98.5% 98.0% 97.69% 97.47% Efficiency, % 97.34% 97.5% 250 Vin to 400 Vout 97.41% 97.26% 270 Vin to 400 Vout 97.0% 300 Vin to 400 Vout 96.75% 330 Vin to 400 Vout 96.5% 96.0% 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power, kilowatts 𝐹𝑔𝑔𝑗𝑑𝑗𝑓𝑜𝑑𝑧 = (𝐸𝑗𝑡𝑑ℎ𝑏𝑠𝑓 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐵𝑣𝑦𝑗𝑚𝑏𝑠𝑧 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐼𝑝𝑣𝑡𝑓𝑙𝑓𝑓𝑞𝑗𝑜 𝑄𝑝𝑥𝑓𝑠 ) (𝑀𝑝𝑥 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢 + 𝐼𝑗ℎ 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢) 20
Performance Results SiC PPU Overall Efficiency vs. Output Power: 500 Vout 98.5% 97.94% 98.0% 97.72% 97.86% 97.67% Efficiency, % 97.5% 300 Vin to 500 Vout 96.71% 97.0% 330 Vin to 500 Vout 96.5% 96.44% 96.0% 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power, kilowatts 𝐹𝑔𝑔𝑗𝑑𝑗𝑓𝑜𝑑𝑧 = (𝐸𝑗𝑡𝑑ℎ𝑏𝑠𝑓 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐵𝑣𝑦𝑗𝑚𝑏𝑠𝑧 𝑃𝑣𝑢𝑞𝑣𝑢 𝑄𝑝𝑥𝑓𝑠 + 𝐼𝑝𝑣𝑡𝑓𝑙𝑓𝑓𝑞𝑗𝑜 𝑄𝑝𝑥𝑓𝑠 ) (𝑀𝑝𝑥 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢 + 𝐼𝑗ℎ 𝑊𝑝𝑚𝑢𝑏𝑓 𝑄𝑝𝑥𝑓𝑠 𝐽𝑜𝑞𝑣𝑢) 21
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