RF Power Amplifier Design
Markus Mayer & Holger Arthaber
Department of Electrical Measurements and Circuit Design Vienna University of Technology June 11, 2001
RF Power Amplifier Design Markus Mayer & Holger Arthaber - - PowerPoint PPT Presentation
RF Power Amplifier Design Markus Mayer & Holger Arthaber Department of Electrical Measurements and Circuit Design Vienna University of Technology June 11, 2001 Contents Basic Amplifier Concepts Class A, B, C, F, hHCA Linearity
Markus Mayer & Holger Arthaber
Department of Electrical Measurements and Circuit Design Vienna University of Technology June 11, 2001
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DC OUT D
D DC IN OUT PA
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VGS IDS Im 2VP VP VDSmax VDD VK VDS V =V
GS P
V =0
GS
Ohmic Saturation Breakdown gm
DD K DD
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VGS IDS Im 2VP VP VDSmax VDD VK VDS V =V
GS P
V =0
GS
Ohmic Saturation Breakdown gm m K DS OPT
max
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VGS IDS Im 2VP VP VDSmax VDD VK VDS VGS VDS 2p
IDS Im 2p
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VDD RL
D G S
48% dB) 14 (e.g. 50%
PA
⋅ = = ⋅ = κ η κ η
A D
G G
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VGS IDS Im 2VP VP VDSmax VDD VK VDS VGS VDS 2p
IDS Im 2p
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VGS IDS Im 2VP VP VDSmax VDD VK VDS VGS VDS 2p
IDS Im 2p
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VDD RL
D G S
f0
% 65 dB) (8 6dB
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PA
⋅ = = ⋅ = κ η κ η
A D
G G % 1 % 100
PA →
→ → η η G
D
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VGS IDS Im 2VP VP VDSmax VDD VK VDS VGS VDS 2p
IDS Im 2p
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VGS IDS Im 2VP VP VDSmax VDD VK VDS VGS VDS 2p
IDS Im 2p
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VDD RL VDS ID
Ze(n)
0, n=even inf, n=even
Zo(n)
0, n=1 inf, n=odd
% 87 dB) (9 5dB
10
PA
⋅ = = ⋅ = κ η κ η
A D
G G % 96 dB) (15 1dB 0% 10
PA
⋅ = + = ⋅ = κ η κ η
A D
G G
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VGS IDS Im 2VP VP VDSmax VDD VK VDS VGS VDS 2p
IDS Im 2p
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VDD RL
D G S
f0 3f0
% 87 dB) (14.6 0.6dB 91%
PA
⋅ = + = ⋅ = κ η κ η
A D
G G
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Port 1 Z=50 Ohm Port 2 Z=50 Ohm
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500 1000 1300 Time (ps)
Drain waveforms
5 10 15 20 25
1000 2000 3000 4000 5000
Inner Drain Voltage (L, V) Amp Inner Drain Current (R, mA) Amp
500 1000 1300 Time (ps)
Gate waveforms
1
500 1000
Inner Gate Voltage (L, V) Amp Inner Gate Current (R, mA) Amp
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3 6 9 12 15 Voltage (V)
Dynamic load line
2000 4000 6000 8000
IVCurve (mA) IV_Curve Dynamic Load Line (mA) Amp
5 10 15 20 24 Power (dBm)
Power Sweep 1 Tone
10 20 30 40 10 20 30 40 50 60 70 80
Output Power (L, dBm) Amp PAE (R) Amp
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5 1 1 5 2 2 5 3 3 5 4 5 1 1 5 2 2 5 3 3 5 P in [d B m ] P out [dBm], Gain [dB] 1 2 3 4 5 6 7 8 0 P A E [% ] P
t G a in G a m m a In P A E 1 d B C P 10 20 30 40 50 60 5 10 15 20 25 30 35 P in [dB m ] P out [dBm], IMDD [dBc], Gain [dB] 10 20 30 40 50 60 P A E [% ] P
IM D D G ain P A E
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5 10 15
10 relative power / dB relative frequency / MHz ACPR1>60dB ACPR2>60dB ACPR1=16dB ACPR2=43dB
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2 2 2
a a Θ Θ
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10 20 30
10 relative power / dB relative frequency / MHz
predistorted signal
I Q I Q I Q modulator demodulator OPAs main amp. local
RF-output baseband input
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signal separation s(t) s (t)
1
K K s (t)
2
K(s (t)+
1
s (t)) =Ks(t)
2
Ks (t)
1
Ks (t)
2
10 20 30
10 relative power / dB relative frequency / MHz ACPR1>60dB ACPR2>60dB ACPR1=18dB ACPR2=29dB s(t) s1(t)
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main amp. (A1)
PIN POUT doherty configuration (A1+A2)
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signal separation amplitude information phase information RF input RF output high efficiency power amplifier
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peak detector supply voltage amplifier limiter high efficiency power amplifier RF output peak detector RF input D A D A D A amplitude information phase information modulator RF output high efficiency power amplifier digital signal processor local oscillator supply voltage amplifier I Q I Q digital baseband input
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10 20 30
10 relative power / dB relative frequency / MHz Magnitude Phase
10 20 30
10 relative power / dB relative frequency / MHz ACPR1>60dB ACPR2>60dB ACPR1=33dB ACPR2=40dB ACPR1=51dB ACPR2=36dB ACPR1=53dB ACPR2=49dB full bandwidth 3⋅B0 bandwidth 5⋅B0 bandwidth 7⋅B0 bandwidth
UMTS example: UMTS example:
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RF input peak detector bias control RF output high efficiency power amplifier
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32 33 34 35 36 37 38 39 40 20 30 40 50 60 70 80 90
power added efficiency / % VD=3.5V VD=4.5V VD=6.5V
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