ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1 PHOTODETECTORS AND SILICON PHOTO MULTIPLIER ESE seminar 15 October 2008 Pierre Jarron, Francois Powolny
OUTLINE OUTLINE � Brief history and overview of photodetectors 2 � Types of photodetectors � Types of photodetectors � phototubes � Semiconductor devices � Avalanche or secondary electron multiplication � Avalanche photodiode � Introduction to silicon PM � Geiger mode avalanche semiconductor devices g � Principle of silicon PM � Process and technologies � Basic architecture � Basic architecture � Performance of silicon PM � Quantum resolution, detection efficiency � Timing resolution Ti i l ti � Readout electronics � Applications ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Historical beginning of photodetectors the photoelectric effect the photoelectric effect 3 When Einstein published his seminal 1905 paper on the particle theory of light, Millikan was convinced p p p p y g , � that it had to be wrong, because light was considered as purely a wave. He undertook a long experimental program to test Einstein's theory. � His results confirmed Einstein's predictions in every detail, but Millikan was not convinced of Einstein's � radical interpretation, and as late as 1916 he wrote, "Einstein's photoelectric equation... cannot in my p , , p q y judgment be looked upon at present as resting upon any sort of a satisfactory theoretical foundation," even though "it actually represents very accurately the behavior" of the photoelectric effect. ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Photodetectors type yp 4 � Goal: converting the energy of absorbed photons into a measurable electrical signal � Basic parameters: single photon or not, speed, gain, quantum efficiency, QE f(wavelength) � 3 types ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Photoelectric tubes single photon detection 5 � All based on photocathode � Devices based on electron multiplication p � Dynodes based photoelectric tube (PMT) � Micro channel plate (MCP) based photoelectric tube � Device based on electron bombarded silicon sensor � Hybrid photoelectric detector � Principle � Generation of photoelectron with a photocathode � R. Millikan experimental device � Electron multiplication with secondary electron � Avalanche in vacuum or ionization in silicon ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Photo-Multiplier-Tube (PMT) history 6 � Who invented the PMT � It is a Russian physicist and engineer L.A Kubetsky � In August 1930, he proposed a device with a photocathode and a series of dynodes multiplying the primary electron with secondary electron emission l i i The first photomultiplier tube in the world: “Kubetsky’s tube in 1930 Th fi h l i li b i h ld “K b k ’ b i 1930 But for others the first PMT was developed by V.K.Zworykin et al. at RCA in 1936 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
The photomultiplier tube p p 7 Photocathode, work function Typical characteristics • Photocathode quantum efficiency: 30% (70% of photons are not converted) • Signal gain up to 10 8 • Dynode voltage: 1000-2000V ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Microchannel plate (MCP) p ( ) 8 MCP MCP principle i i l Ultra fast Single Photon detector : pixilated MCP- PMT Done in collaboration with Space Research center Leicester and Photek for time resolved fluorescence CERN TT project photocathode h t th d Δ V provides e - acceleration : defines transit time photocathode to MCP and e - energy for 1 st collision in the MCP MCP Gain : ~ 10 5 to 10 6 Chevron stack z V1 Emitted e - : Position at t = t 1 Distributed in time (TTS) and in energy d 1 Position at: Vacuum t = t 1 +time1 z or t CERN (Rui)Multi-anode ε res d res x Resistive layer V2 on multilayer ceramic Electrode ~ 5 10^5 e - ~ 2 10^6 e - 20 ps time resolution single photon detection Image intensifier ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
HPD CERN development p 9 US HPD patent 1975 HPD principle was called electron bombarded device LHCb-RICH HPD T. Gys X HPD C. Joram ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Semiconductor photodetectors p 10 � Photoconductors: based on conductivity variations Ph t d t b d d ti it i ti � Photodiodes: based on junction, heterojunctions � PN-diodes, photovoltaic (ex: solar cells) � PN-diodes photovoltaic (ex: solar cells) � PIN-diodes � Phototransistor � CCD � Schottky photodiode (metal-semiconductor) � Linear avalanche photodiodes(APD) � Linear avalanche photodiodes(APD) � Geiger mode avalanche APD � Silicon PM � Band gap engineered photodetectors � Quantum well infrared photodetector(QWIP) � Stair case a alanche photodiode � Stair case avalanche photodiode ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Photoconductor 11 � Optical electron-hole pair generation changes the conductivity of a semiconductor material � Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR) � Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR) � Applications: security alarm, street lights, IR-astronomy, IR-spectroscopy ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Photovoltaic detector 12 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
PN photodiode p 13 Reverse biased PN junction C-band Depleted MOS structure used in CCD V-band Reversed bias Depleted silicon depth ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Avalanche photodiode p 14 � Avalanche in silicon P-N junction � Known since 45 years � Journal of applied physics � Vol.32-6, Vol. 34 – 6 � But very slow development � But very slow development I h I ph photocurrent photocurrent photon wavelength λ c photon velocity h Planck's constant q electronic charge incident optical P in power (W) M photoelectric gain p g quantum efficiency η ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Single photon avalanche photodiode 15 � SPAD, Geiger avalanche mode SPAD G i l h d � Single photon detection, binary device � Noise: single thermal electron � Biased above breakdown V BD � Gain ( V V ). C − a BD APD gain = q � Very fast device : discharge of C D on the � Very fast device : discharge of C D on the external low resistance OFF photon Quenching ON In Sensors 2008, 8, 4636-4655 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
Comparison of S-P photodetectors p p 16 PMT Linear-mode APD Geiger-mode APD Photoelectric gain 10,000–1,000,000 10–100 10,000–300,000 Excess noise factor <2 >2 2 Max. detection <25% <50% 25%–100% probability Operating temperature 240°K 240°K 300°K Voltage bias >1000 V 30–500 V 30–70 V Detection speed e ec o speed <1 ns pulses s pu ses >20 ns pulses 0 s pu ses <1 ns pulses s pu ses Afterpulsing No no yes Wavelength 0.3-1.6 µm 0.4-1.1 µm 0.4-1.1µm Magnetic field Yes No No susceptibility Reliability <1000 hr. <100,000 hr >1000 hr. ? Large array capability Yes MAPMT yes ? Crosstalk N/A No Poor ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny 15 October 2008
NINO 0.25 circuit used in ALICE TOF SPAD/Sipm signal 20-50 fC/single photon avalanche SPAD/Sipm signal 20 50 fC/single photon avalanche � � Gain 2.10 5 , 1.5 ns, � Current mode input stage � Common gate configuration � Noise 3000 e- � NINO works like a QTC or TOT � Jitter 10 ps rms for 100 fC � NINO Block diagram ×6 ×6 ×6 ×6 Response to ultra fast analogue pulse
NINO 0.13 results 5 to 40 fC
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