PHOTODETECTORS AND SILICON PHOTO MULTIPLIER ESE seminar 15 - - PowerPoint PPT Presentation

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ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1 PHOTODETECTORS AND SILICON PHOTO MULTIPLIER ESE seminar 15 October 2008 Pierre Jarron, Francois Powolny OUTLINE OUTLINE Brief history and overview of photodetectors 2

SLIDE 1

ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1

PHOTODETECTORS AND SILICON PHOTO MULTIPLIER

ESE seminar

Pierre Jarron, Francois Powolny

15 October 2008

SLIDE 2

OUTLINE OUTLINE

2 Brief history and overview of photodetectors

Types of photodetectors Types of photodetectors

phototubes Semiconductor devices Avalanche or secondary electron multiplication Avalanche photodiode Introduction to silicon PM

Geiger mode avalanche semiconductor devices

Principle of silicon PM

Process and technologies Basic architecture Basic architecture

Performance of silicon PM

Quantum resolution, detection efficiency

Ti i l ti

Timing resolution

Readout electronics Applications

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

SLIDE 3

Historical beginning of photodetectors the photoelectric effect the photoelectric effect

When Einstein published his seminal 1905 paper on the particle theory of light, Millikan was convinced

p p p p y g , that it had to be wrong, because light was considered as purely a wave.

He undertook a long experimental program to test Einstein's theory.
His results confirmed Einstein's predictions in every detail, but Millikan was not convinced of Einstein's

radical interpretation, and as late as 1916 he wrote, "Einstein's photoelectric equation... cannot in my p , , p q y judgment be looked upon at present as resting upon any sort of a satisfactory theoretical foundation," even though "it actually represents very accurately the behavior" of the photoelectric effect. 15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

SLIDE 4

Photodetectors type yp

Goal: converting the energy of absorbed photons into a

measurable electrical signal

Basic parameters: single photon or not, speed, gain, quantum

efficiency, QE f(wavelength)

3 types

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

SLIDE 5

Photoelectric tubes

single photon detection

All based on photocathode

Devices based on electron multiplication

Dynodes based photoelectric tube (PMT) Micro channel plate (MCP) based photoelectric tube

Device based on electron bombarded silicon sensor

Hybrid photoelectric detector Principle

Generation of photoelectron with a photocathode

R. Millikan experimental device

Electron multiplication with secondary electron

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Avalanche in vacuum or ionization in silicon

SLIDE 6

Photo-Multiplier-Tube (PMT) history

Who invented the PMT

It is a Russian physicist and engineer L.A Kubetsky

In August 1930, he proposed a device with a photocathode and a

series of dynodes multiplying the primary electron with secondary l i i electron emission

Th fi h l i li b i h ld “K b k ’ b i 1930

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

The first photomultiplier tube in the world: “Kubetsky’s tube in 1930 But for others the first PMT was developed by V.K.Zworykin et al. at RCA in 1936

SLIDE 7

The photomultiplier tube p p

Photocathode, work function

Typical characteristics

Photocathode quantum efficiency: 30% (70% of photons are not converted)
Signal gain up to 108

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Dynode voltage: 1000-2000V

SLIDE 8

Microchannel plate (MCP) p ( )

MCP i i l Ultra fast Single Photon detector : pixilated MCP- PMT Done in collaboration with Space Research center Leicester and Photek for time resolved fluorescence CERN TT project MCP principle

h t th d ΔV provides e- acceleration : defines transit time photocathode to MCP and e- energy for 1st collision in the MCP Gain : ~ 105 to 106 photocathode MCP Chevron stack

d1 z or t Emitted e- : Distributed in time (TTS) and in energy Position at t = t1 Position at: t = t1+time1 Vacuum V1

CERN (Rui)Multi-anode

n multilayer ceramic

dres

εres

Resistive layer Electrode V2

~ 5 10^5 e- 15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Image intensifier

~ 2 10^6 e-

20 ps time resolution single photon detection

SLIDE 9

HPD CERN development p

HPD principle US HPD patent 1975

was called electron bombarded device

LHCb-RICH HPD T. Gys 15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny X HPD C. Joram

SLIDE 10

Semiconductor photodetectors p

Ph t d t b d d ti it i ti

Photoconductors: based on conductivity variations Photodiodes: based on junction, heterojunctions PN-diodes photovoltaic (ex: solar cells) PN-diodes, photovoltaic (ex: solar cells) PIN-diodes Phototransistor CCD Schottky photodiode (metal-semiconductor) Linear avalanche photodiodes(APD) Linear avalanche photodiodes(APD) Geiger mode avalanche APD Silicon PM Band gap engineered photodetectors Quantum well infrared photodetector(QWIP) Stair case a alanche photodiode

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Stair case avalanche photodiode

SLIDE 11

Photoconductor

11 Optical electron-hole pair generation changes the conductivity of a semiconductor

material

Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR) Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR) Applications: security alarm, street lights, IR-astronomy, IR-spectroscopy

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

SLIDE 12

Photovoltaic detector

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

SLIDE 13

PN photodiode p

Reverse biased PN junction

Depleted MOS structure

C-band

used in CCD

V-band Reversed bias Depleted silicon depth

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

SLIDE 14

Avalanche photodiode p

Avalanche in silicon P-N junction

Known since 45 years

Journal of applied physics

Vol.32-6, Vol. 34 – 6

But very slow development But very slow development

I h photocurrent Iph photocurrent λ photon wavelength c photon velocity h Planck's constant q electronic charge Pin incident optical power (W) M photoelectric gain

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

p g η quantum efficiency

SLIDE 15

Single photon avalanche photodiode

SPAD G i l h d

SPAD, Geiger avalanche mode

Single photon detection, binary device Noise: single thermal electron Biased above breakdown VBD Gain Very fast device : discharge of CD on the

q C V V gain

APD BD a

). ( − =

Very fast device : discharge of CD on the

external low resistance

OFF

photon

Quenching

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

In Sensors 2008, 8, 4636-4655

SLIDE 16

Comparison of S-P photodetectors p p

PMT Linear-mode APD Geiger-mode APD Photoelectric gain 10,000–1,000,000 10–100 10,000–300,000 Excess noise factor <2 >2 2

Max. detection

probability <25% <50% 25%–100% Operating temperature 240°K 240°K 300°K Voltage bias >1000 V 30–500 V 30–70 V Detection speed <1 ns pulses >20 ns pulses <1 ns pulses e ec o speed s pu ses 0 s pu ses s pu ses Afterpulsing No no yes Wavelength 0.3-1.6 µm 0.4-1.1 µm 0.4-1.1µm Magnetic field Yes No No susceptibility Reliability <1000 hr. <100,000 hr >1000 hr. ? Large array capability Yes MAPMT yes ?

15 October 2008 ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny

Crosstalk N/A No Poor

SLIDE 17

NINO 0.25 circuit used in ALICE TOF

SPAD/Sipm signal 20-50 fC/single photon avalanche
SPAD/Sipm signal 20 50 fC/single photon avalanche
Gain 2.105 , 1.5 ns,
Current mode input stage
Common gate configuration
Noise 3000 e-
NINO works like a QTC or TOT
Jitter 10 ps rms for 100 fC

NINO Block diagram

×6 ×6 ×6 ×6

Response to ultra fast analogue pulse

SLIDE 18

NINO 0.13 results

5 to 40 fC