Performance Of Thin Edgeless n -on- p Planar Pixel Sensors for ATLAS - - PowerPoint PPT Presentation

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Performance Of Thin Edgeless n -on- p Planar Pixel Sensors for ATLAS - - PowerPoint PPT Presentation

Sep 14, 2023 112 likes •287 views

Performance Of Thin Edgeless n -on- p Planar Pixel Sensors for ATLAS Upgrades A. Bagolini 1 , M. Bomben 2 , M. Boscardin 1 , L. Bosisio 3 , G. Calderini 2,4 , J. Chauveau 2 , G. Giacomini 1 , A. La Rosa 5 , G. Marchiori 2 , N. Zorzi 1 1 -

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SLIDE 1

Performance Of Thin Edgeless n-on-p Planar Pixel Sensors for ATLAS Upgrades

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  • A. Bagolini1, M. Bomben2, M. Boscardin1, L. Bosisio3, G. Calderini2,4,
  • J. Chauveau2, G. Giacomini1, A. La Rosa5, G. Marchiori2, N. Zorzi1

1 - Fondazione Bruno Kessler (FBK), Trento, Italy 2- Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris, France 3- Università di Trieste, Dipartimento di Fisica and INFN, Trieste, Italy 4- Dipartimento di Fisica, Università di Pisa, and INFN Sez. di Pisa, Pisa, Italy 5- Section de Physique (DPNC), Université de Genève, Genève, Switzerland

9th “Trento” Workshop on Advanced Silicon Radiation Detectors (3D and p-type Technologies) Genova, February 26th-28th 2014

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SLIDE 2

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Edgeless pixels via DRIE

  • Joint FBK-LPNHE project
  • Goal: thin, edgeless pixel sensors
  • Target: intermediate layers
  • How: make the border a damage

free ohmic contact by DRIE

  • 200 μm thick n-on-p production
  • 500 μm temporary support

wafer

  • Pixel-to-trench distance as low

as 100 μm

Main production splits:

  • p-spray dose
  • p-stop: present/absent
  • metal overhang: present/absent
  • 1 wafer with no DRIE
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SLIDE 3

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FEI4 sensors characteristics

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SLIDE 4

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The active edge project

 Goal: HL-LHC ATLAS intermediate

pixel layer

 n-on-p production  Pixel/trench distance as low as 100 μm

  • xide
  • xide

Support wafer Field plate

p-substrate

Substrate contact Trench (poly filling) p-spray p-stop n-pixel

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SLIDE 5

EdgeLess Pixel Test Structures

No GR 1 GR 2 GR

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Pixel pitch = 250 mm x 50 mm

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SLIDE 6

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Breakdown studies

p-spray dose = 3e12 cm-2 p-spray dose = 5e12 cm-2 Little dependence on trench distance

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SLIDE 7

I-V on FE-I4 sensor

Automatic measurement with Temporary metal

trench

Temporary metal

Pads of temporary metal 16

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SLIDE 8

I-V vs p-spray doses

P-spray dose: 5x1012/cm2

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  • VBD as expected from IV on test structures

p-spray dose = 3e12 cm-2 p-spray dose = 5e12 cm-2

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SLIDE 9
  • Samples were irradiated with reactor neutrons (JSI, Ljubljana)

– Limited annealing at room temperature

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α ~ 4.7x10-17 A/cm

Results in agreement with literature

Measurements on a pad diode log(C) – log(V)

I – V

Irradiation at JSI (Ljubljana)

F: 2.5E15 1-MeV neq /cm2

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SLIDE 10

Interpixel resistance after irradiation

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p-spray dose = 3x1012/cm2 Excellent pixel isolation even after irradiation

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SLIDE 11

Irradiated FEI4 test structures

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p-spray dose = 3x1012/cm2

IPAD [A]

No GR 1,2,3 GRs

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SLIDE 12

Irradiated FEI4 test structures

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IGR [A]

3 GRs

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SLIDE 13

FE-I4 modules

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trench

Temporary metal

  • Modules are being assembled at IZM

by bump-bonding a few FE-I4 sensors to FE-I4B ROC

  • Delivery expected by end of November

after resist patterning Before temporary metal removal After temporary metal removal

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SLIDE 14

2 modules assembled for test

  • sensor S9  400 µm & 10 GRs
  • sensor S7  200 µm & 3 GRs

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SLIDE 15

400 µm, 10 GRs

It was It is

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SLIDE 16

Source scan

Disconnected pixels

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SLIDE 17

Conclusions & Outlook

  • Irradiates structures: OK
  • FE-I4 two test modules: mixed results

– Tackling issues

  • Next: 10 modules to be assembled
  • Goal: on beam next autumn

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