Patterning Aware Design Optimization of Selective Etching in N5 and - - PowerPoint PPT Presentation

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Patterning Aware Design Optimization of Selective Etching in N5 and - - PowerPoint PPT Presentation

UT DA Patterning Aware Design Optimization of Selective Etching in N5 and Beyond Yibo Lin 1 , Peter Debacker 2 , Darko Trivkovic 2 , Ryoung-Han Kim 2 , Praveen Raghavan 2 , David Z. Pan 1 1 ECE Department, University of Texas at Austin 2 IMEC,


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SLIDE 1

UT DA

1

Yibo Lin1, Peter Debacker2, Darko Trivkovic2, Ryoung-Han Kim2, Praveen Raghavan2, David Z. Pan1

1ECE Department, University of Texas at Austin 2IMEC, Leuven, Belgium

Patterning Aware Design Optimization of Selective Etching in N5 and Beyond

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SLIDE 2

Conventional Blocks v.s. Self-Aligned Blocks (SAB)

Two approaches to obtain equivalent patterns

2

Process variation

Margin

EPE margin: margin to tolerate edge placement error EPE margin =

" # $

Conventional blocks

B B B A A A A B B B A A A A

SAB enabled by selective etching

Margin

EPE margin =

% # $

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SLIDE 3

Problem Formulation

How large is the design space for SAB? How to enable fast design closure for SAB?

3

Design rule exploration

  • Given lithography options of SAB and technology definitions
  • e.g., pitches and lithography spacing for blocks
  • Define design rules with maximum solution space for design closure

SAB mask optimization

  • Given a set of design rules and designs
  • Optimize blocks by redistribution to remove design rule violations
  • Perform layout decomposition of blocks
  • Minimize cost of redistribution, such as total line end extension
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SLIDE 4

Patterns That Cause Conflicts

4 types of patterns that may result in conflicts

  • Spacing rules

4

1 2

da

1 2

dd dh

1 2

dp

1 2

ds Parallel Abutting Stacking Diagonal

Patterns Parallel Abutting Stacking Diagonal Required Distance dp da ds dd, dh

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SLIDE 5

1 2

ds

2P

Simple and Complex Rules for SAB

Link design rules to line pitch ! and lithography spacing "

5

Simple rules

  • #$ = #& = #' = #(

Limited by parallel patterns

  • Minimum area constraint
  • Lithography spacing

Complex rules

  • Allow different #$, #&, #', #(
  • NEGATIVE block end extension to

enable stacking patterns If 2! < #' = " Tradeoff EPE margin for design space

1 2

dp Parallel Minimum area constraint Stacking

1 2

ds

2P

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SLIDE 6

Simple and Complex Rules for SAB

Link design rules to line pitch ! and lithography spacing "

6

Simple rules

  • #$ = #& = #' = #(

Complex rules

  • Allow different #$, #&, #', #(
  • NEGATIVE block end extension to

enable stacking patterns Conventional block SAB simple rules SAB complex rules P s margin margin margin 24 84 6 18 80 2 28 84 7 21 7 80 9 32 84 8 24 14 80 16 36 84 9 27 21 80 23 Assume 8nm EPE margin required [Han+,SPIE2016]

  • Approx. N5

Can complex rules enable larger design space than simple rules?

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SLIDE 7

SAB Optimization

SAB redistribution to resolve conflicts

  • A post optimization stage in existing physical design flow
  • Simple rules v.s. complex rules
  • Simple rules results in 22x more final conflicts than complex rules
  • Relaxing lithography spacing results in 10% more final conflicts

7 #icn: # of initial conflicts #cn: # of final conflicts

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SLIDE 8

Conclusion

Design space exploration for SAB

  • Design rules scalable with pitches and lithography spacing
  • Post optimization for SAB
  • Impacts of design rules to design closure

SAB is a promising and feasible option for N5 and beyond

  • Provide insights to the further advancement of manufacturing process

Future work

  • SAB friendly design flow
  • Early stage consideration of SAB rules

8

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SLIDE 9

Thank you

9

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SLIDE 10

Outline

  • Introduction
  • Problem Formulation
  • SAB Design Rule Exploration
  • SAB Optimization
  • Conclusion

10

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SLIDE 11

1-D Gridded Layout – Lines and Blocks

Conventional blocks (cuts)

11

Process variation

Margin

EPE margin: margin to tolerate edge placement error

= 1 4 $

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SLIDE 12

1-D Gridded Layout – SAB Lines and Blocks

Self-aligned blocks (SAB)

12

B B B A A A A B B B A A A A

EPE margin= "

# $ Margin

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SLIDE 13

Manufacturing Process of SAB

Non-selective etching v.s. selective etching

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A A A A B B B A B A B A B A 1st spacer (A) Mandrel 2nd spacer B

Conventional blocks SAB

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SLIDE 14

SAB Optimization

SAB redistribution to resolve conflicts

  • A post optimization stage in existing physical design flow
  • Simple rules v.s. complex rules
  • Simple rules results in 22x more final conflicts than complex rules
  • Relaxing lithography spacing results in 10% more final conflicts

14 #icn: # of initial conflicts #cn: # of final conflicts ext: line end extension bext: block end extension