NANDOS NANDOS Nanophotonic and Nanoelectronic Devices from Oxide - - PowerPoint PPT Presentation

Project objectives: Project objectives:

Development of ZnO nanostructures for applications in optoelectronics with a particular emphasis on lighting technology

NANDOS NANDOS

Nanophotonic and Nanoelectronic Devices from Oxide Semiconductors

STREP

Specific challenges: Specific challenges:

• Growing self-organised ZnO

based nanostructures

• Optimising the control of self-
• rganisation
• Demonstration of working

applications with ZnO nanodevices

Expected impact: Expected impact:

Use of self organised ZnO nanostructures for novel applications Use of self organised ZnO nanostructures for novel applications in optoelectronics, sensors, transducers etc. in optoelectronics, sensors, transducers etc.

Partners Partners

OSRAM OPTO SEMICONDUCTORS GmbH GERMANY TECHNISCHE UNIVERSITÄT BRAUNSCHWEIG GERMANY LIGHTLAB AKTIEBOLAG SWEDEN NATIONAL CENTRE FOR SCIENTIFIC RESEARCH "DEMOKRITOS" GREECE UNIVERSITE JOSEPH FOURIER GRENOBLE 1 FRANCE UNIVERSITÄT LEIPZIG GERMANY

EU funding: EU funding: 2 500 000 Euro Duration: Duration: 36 months Start date: Start date: 2005-08-01 End date: End date: 2008-07-31 Coordinator Coordinator Magnus Willander GÖTEBORGS UNIVERSITET Sweden

NANDOS NANDOS

STREP

Project Project’ ’s website: s website: http://

http://fy.chalmers.se/pep/NANDOS.htm fy.chalmers.se/pep/NANDOS.htm

Patterned arrays of ZnO nanopillars generated via postgrowth lithography / wet chemical etching: (a) photograph of PEN foil;(b) SEM picture

• f PEN foil enlarged of (a); c) SEM picture of silicon (100);

(d) SEM enlarged of (c) Various ZnO nanostructures grown on Si substrates at different conditions by vapor-liquid-solid . (a) SEM image of ZnO nanorods grwon at low temperature on ITO (b) Digital photograph showing white light emission from ZnO nanrod LED made from (a)

a b

Left figure: PL spectra, measured at room temperature at three different excitation densities during laser pulse , 14.4 kW/cm2, 32 kW/cm2 and 56 kW/cm2. Right figure: Integrated emission intensity from nanorods as a function of optical pumping power. The inset shows the SEM image

• f the ZnO nanorods grown on Si

substrate . FE-SEM images ZnO nanowires on a-plane sapphire with determination of length and diameter of selected nanowires, grown by

• PLD. The aspect ratio is correlated

systematically to the growth parameters.