IROC Technologies General Presentation June 2014 Who is IROC - - PowerPoint PPT Presentation

iroc technologies general presentation
SMART_READER_LITE
LIVE PREVIEW

IROC Technologies General Presentation June 2014 Who is IROC - - PowerPoint PPT Presentation

IROC Technologies General Presentation June 2014 Who is IROC Technologies? History: Established in 2000 in France as a spin-off from a R&D lab US Corp launched in 2001 Memory BIST product & team acquired by Synopsys in


slide-1
SLIDE 1

IROC Technologies General Presentation

June 2014

slide-2
SLIDE 2

2

Who is IROC Technologies?

 History:

 Established in 2000 in France as a spin-off from a R&D lab  US Corp launched in 2001  Memory BIST product & team acquired by Synopsys in 2004

 Activity:

 Solutions for analyzing and improving the overall reliability of devices  Focus on Single Event Effects  Moving on process variability, environment stress, ageing

 Leading commercial provider of soft error solutions:

 More than 200 soft error test campaigns  Serving major players in many segment of the industry (foundries,

fabless, IDM, system houses)

 Solutions roadmap in line with market needs

 Established network of well recognized collaborators:

nuclear database, neutron labs, alpha counting equipment suppliers

slide-3
SLIDE 3

SEEs – Why Should I Care

 Usual fields: Aero-space applications

 A satellite was launched from Baikonor Cosmodrome, Kazakhstan on 31 May 2005  Failed during the 5th orbit instead of after a total of 253 orbits (2% use) Failure Site ->

Source: Reno Harboe-Sørensen, ESA-ESTEC, ” Radiation Effects in Spacecraft Electronics“, 5th LHC Radiation Workshop –Nov-29, 2005.

 A latch-up condition in a SRAM was concluded as the possible cause

 SEEs: Coming down to Earth

 1970’s: First studies on SRAM susceptibility to alpha particles… and still many years later:  2000’s: Alpha problems in CPU cache memories (used in high-reliability servers)  Elections in Belgium: electronic voting machines on 05/18/2003 (Schaerbeek):  More votes compared to number of registered persons: shift of … 4096 votes !  A SEU effect on 13th bit in SRAM was considered as the possible causes  Now: Atmospheric neutrons, low energy protons, multi-cell errors, transients, X-rays dose effects in DRAMs

slide-4
SLIDE 4

Backgrounder: The Soft Error/ SER Problem

Nuclear Physics Understanding the Phenomena Requires a Combination of Nuclear Physics & Semiconductor Device Physics

Neutrons @ sea level Si

25Mg+α 28Al+p 24Mg+n+α

Ions

Si

Transistor Bit flip, Transient pulse

Silicon Reaction

e- e- e- Electrons

Packaging

Impurities

α e-

n

10B

nth

7Li+α

e-

slide-5
SLIDE 5

SER trends in Cells wrt Process Node

100 200 300 400 500 600 700 50 100 150 200

SBU Average/node MCU Average/node

  • Expon. (SBU Average/node)
  • Expon. (MCU Average/node)

Even though per memory bitcell SER sensitivity is decreasing, overall FIT per SoC is increasing

SRAM SER FIT rate per node

FIT/Mb

100 200 300 400 500 600 700 100 200 300 400

FF SEU FIT rate per node

SEU Average/node Linear (SEU Average/node)

Atmospheric Neutron Results Alpha results are similar assuming an Ultra Low Alpha Emissivity Rate package

slide-6
SLIDE 6

1 10 100 1000 20 40 60 80 100 120 140 160 180 200

Memory SER Logic SER (Seq + Comb)

  • Expon. (Memory SER)
  • Expon. (Logic SER (Seq + Comb))

Typical SoC SER FIT rate per design

Node (nm) FIT

SER trends in SoC wrt Process Node

slide-7
SLIDE 7

Raw Cell SER Circuit SER System SER User SER Environment

SEEs: A challenging aspect of System Reliability

 Single Event Effects (SEEs) - A threat to all the reliability metrics  Data Integrity  Availability  Maintainability  Managing SER aspects – an industry-wide topic  Inter-company collaboration – materials suppliers, foundries, IP & chips providers, system integrators, etc  Intra-company collaboration – system architect, reliability engineer, hardware designer, software engineer

SER Data

slide-8
SLIDE 8

Functional Failure

IROC Scope and Objectives

Single Event Fault

Single Event Transient Single Event Upset Single Event Latchup, SEGR, SEB

Soft Error

Soft Error in Logic SBU, MBU in memory

Abstraction Level Increases => Sophisticated SEE Analysis Device Complexity Increases => Innovative Test Methodology

TCAM Test chips Standard memories: SRAM, DRAM, FLASH, etc FPGAs: SRAM, FLASH, Fuse-based, etc CPUs, ASICs Boards Devices

slide-9
SLIDE 9

IROC Offer Positioning

Foundry Libraries Design Packaging System

Cell level Analysis

Library characterization FIT prediction Cell optimization TFIT tool

Circuit Analysis

Design characterization Risk assessment Intrinsic FIT prediction SoCFIT tool

SER Product Testing

Library level (characterization) Chip level (ASER/RTSER) System level (Platform Testing) Wafer alpha emission analysis Packaging Alpha emission analysis

Design Support

Patented solutions for libraries Patented solutions for designs

DESIGN SERVICE & TOOLS TEST SERVICE

IROC delivers test and design solutions to ensure that soft error risks are addressed and eradicated

slide-10
SLIDE 10

SER Test Activities at IROC

slide-11
SLIDE 11

Accelerated Neutron Shuttle Program

Multiple users at the same time (stack of daughterboards) allows creating more testing opportunities for the industry.

slide-12
SLIDE 12

Soft Error Testing: Accelerated Testing Sites

Triumf, Vancouver TSL, Sweden Los Alamos National Labs

slide-13
SLIDE 13

Neutron Shuttle Schedule

  • IROC tests mostly with white/atmospheric spectrum neutron labs
  • Alpha particles test performed at IROC. Available year round
  • Gamma, protons, heavy ions: pending customer need
slide-14
SLIDE 14

From Components Testing…

 SRAM

 SEU, MBU, SEL, SEFI

 TCAM

 SRAM-like Analysis +  Search mode SEEs

 DRAM

 Detection of memory upsets and Tref evolution

 FPGA

 Detections in configuration memory, block RAM, F/F and logic

block upsets

 ASIC and SoC

 Detections in embedded memories and F/F upsets.

… to Motherboard and Device Testing

slide-15
SLIDE 15

Other Radiation Testing

 Beam Types

 Heavy Ions: Jyvaskyla (Finland), UCL-HIF (Belgium), IPN (France)  Protons: UCL-LIF (Belgium), TSL (Sweden)  Alpha: in-house capabilities; Californium: ESA ESTEC, Laser

Beam: EADS (France)

 Applications

 Dedicated SET/SEU test chips: ATMEL, CNES, EADS, MindSpeed  CPUs, microcontrollers: ATMEL, CNES, ESA, e2v, EADS (+Freescale)  Memory devices: STM, ATMEL, others  ASICs, SoCs: ATMEL, Thales, CNES

 Military/Aero-Space activities

 TID: C60 registered and calibrated source in France  Displacement damage effect  Prompt dose effect (X flash)

slide-16
SLIDE 16

Dedicated Test-Chips for SER Measurements

SET Test SEU Test SET Probe Validation at high frequencies Process Technology characterization Transient Pulse Width Speed Test SEU rate SET rate

slide-17
SLIDE 17

Alpha Counting

slide-18
SLIDE 18

Alpha Particles Contamination Issues

 The semiconductor industry has reached an extremely high level of

transistor integration (65 or 45nm nodes)

 As a consequence, the technology is losing its natural immunization

against environmental aggressions (radiations, alpha particles).

 Alpha particles are generated by traces of radioactive material in the

  • packaging. They have a very high ability to generate upsets.

 Industry requirements call for very low to ultra low alpha emissions of

materials (.01 to .001 alpha/cm2/hr)

 More and more manufacturers need to verify the emission level and the

immunization of their design. IROC and Alpha Sciences, as third party independent specialists, help the industry tackle these issues

slide-19
SLIDE 19

Types of Samples Measured

Pellets (Molding compounds) Si wafers (up to 300mm) Powder Samples Solder Balls Paste Samples (solder paste) Packaged chips

  • r devices
slide-20
SLIDE 20

ASI Ultra Low Background Counters

  • Widely used in the Industry

Hundreds of counters shipped, decades of experience in the field

  • Simple and easy to use

Plug and play solution, very stable, low maintenance systems

  • Highly Versatile

For any type of sample: solid, powder, paste, non conductive, you name it!

  • Very Low background on an economical system

Best accuracy for the price!

slide-21
SLIDE 21

 We measure any type of material or devices (as

long as it fits into the counting chamber)

 Measurement duration takes 2 to 3 days,

depending on the size of devices and alpha activity (low activity can take longer to improve the accuracy)

 We sell entire alpha counting system for ASI.

(please contact us for price and conditions)

 Measurement takes place either in the US or in

France, for more flexibility and convenience

 For more information, visit:

http://www.IROCtech.com/sol_test_115.html

Our Offering

slide-22
SLIDE 22

SER Simulation Tools

slide-23
SLIDE 23

SER DB Analyzed SoC design SPICE NetList Response model SoC RTL/Netlist

TFIT SoCFIT

Analysis/Prediction platform

slide-24
SLIDE 24

 A cell level soft error simulator:

 Input

: Cell netlist, technology response model, particle type, cell layout geometry

 Output : SEU FIT / MCU FIT / Current pulse

 Limited requirement: Access to Spice Simulator tool  Targeted Users:

 Memory Designers and Bit Cell Developers  IP Development Teams (At IDM, Foundries or Fabless)

 Support of different radiation environments:

 Ions (Heavy & Alpha)  Atmospheric neutrons

 Very fast and accurate simulator (silicon test correlated)  Charge coupling and charge sharing effects included

TFIT Overview

slide-25
SLIDE 25

IROC Technologies

User Input

Configuration parameters SPICE netlist Model Card

Output TFIT

SPICE Simulator

SET/SEU Cross section SEU FIT MCU FIT patterns

Process response models Secondary Particles Nuclear Database

TFIT Positioning in the Design Flow

slide-26
SLIDE 26

MNQN MPQN MPQT MNQT

QT

MNA1 MNA2

QN Lb1 Lb2 WL

Transistor Cell State Transistor FIT QT QN MPQT 1 211 MPQN 1 211 MNQT 1 67 MNQN 1 67 MNA1 1 61 MNA2 1 61

SRAM FIT=

transistors

Transistor FIT Number of different states = 678 2 = 339 Failures/ Mbit/10

9hours

SPICE NetList Transistor FIT Current Curves

TFIT TFIT Typical Case

slide-27
SLIDE 27
  • Cell layout contribution to FIT rate (influence of layout geometry)
  • SRAM SERSEU: SBU/MCU
  • Sequential SERSEU: State dependence, Master/Slave Contribution
  • Combinational SERSET

SET Statistics: PW, Frequency Cell State/Load Influence

Cell SER Analysis – TFIT Results

slide-28
SLIDE 28

Single Event Fault

Single Event Transient Single Event Upset

Soft Error

Soft Error in Logic SEU in memory = Soft Error

Functional Failure

Single Event Fault ► Soft Error

(In-clock-cycle propagation)

Highly automated probabilistic tools Soft Error ► Functional Failure

(many clock cycles propagation)

Accelerated simulation approach

Circuit SER Analysis – The SoCFIT Platform

slide-29
SLIDE 29

 A circuit level SEE assessment platform

 Input :

Gate level netlist and timing files, RTL, SER Database

 Output : FIT rate, map of contributors, deratings

 Targeted users:

 ASIC Designers needing Soft Errors budget assessment

 Soft Error sensitivity analyses

 Based on SER DB for memory and logic elements  Integrates Logic, Timing and Application (RTL) derating  Checks Efficiency of ECC and higher level mitigation techniques  Uses automated fault injection techniques

SoCFIT Overview

slide-30
SLIDE 30

SoCFIT Platform Modules

Logic derating Time derating Functional derating

Memory blocks (SER) Combinational Logic (SET) Sequential Logic (SEU)

Architectural Module SERArch

Mem

FDR SEU FDR SEU TDR Limited requirement: timing analysis or synthesis tool access (SEU TDR) SER DB needed for the technology (built with TFIT or Test)

Reporting Module SERScope

SEU LDR SET FDR SET TDR SET LDR

slide-31
SLIDE 31

User Case Flow

Default FIT Analysis Within Spec? Refine FIT Analysis FIT Analysis OK Error Mitigation

Select FIT DB Load Design Default de-rating Hierarchical results Per-instance data Various data plots Specify protection User de-rating Applicative de-rating List of critical blocks Contributors to FIT Interactive optimization

Yes Yes No No

slide-32
SLIDE 32

Design Services

slide-33
SLIDE 33

Design Services: Analysis

 SER Analysis and qualification  New technologies SER characterisation & improvement  Specific test chip design and analysis  Design and system SER analysis  SER as a part of the overall system reliability

slide-34
SLIDE 34

Design Services: SER Improvement

 SER Improvement  Custom protection methodologies and design flows

for the hardening of electronic devices

 Software

tools for design automation (logic & memory)

 Hardened cells and IPs  Consulting for fault-tolerant design of ICs and

systems (including COTS-based)

slide-35
SLIDE 35

SER Evaluation: A Growing and Rewarding Activity