Ionic liquid gating of InAs nanowire-based FETs Francesco Rossella - - PowerPoint PPT Presentation

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Ionic liquid gating of InAs nanowire-based FETs Francesco Rossella - - PowerPoint PPT Presentation

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Ionic liquid gating of InAs nanowire-based FETs Francesco Rossella NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR Pisa, Italy NEST, Scuola Normale Superiore & Istituto Nanoscienze-CNR A public institute for higher education

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SLIDE 1

Ionic liquid gating of InAs nanowire-based FETs

Francesco Rossella

NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR Pisa, Italy

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SLIDE 2

http://www.laboratorionest.it/

Palazzo Carovana, SNS

NEST, Scuola Normale Superiore & Istituto Nanoscienze-CNR

A public institute for higher education and research

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SLIDE 3

Nanowire-based devices

  • Materials:

self-assembled NW heterostructures

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SLIDE 4

Nanowire-based devices

  • Materials:

self-assembled NW heterostructures

  • Technology:

field effect controlled NW-based devices

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SLIDE 5

Nanowire-based devices

  • Materials:

self-assembled NW heterostructures

  • Technology:

field effect controlled NW-based devices

  • Experiments:

electrical & thermal transport, luminescence

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SLIDE 6

Nanowire-based devices

  • Materials:

self-assembled NW heterostructures

  • Technology:

field effect controlled NW-based devices

  • Experiments:

electrical & thermal transport, luminescence

  • Targets:

fucntional devices: (Q)ICTs, energy harvesting

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SLIDE 7

Nanowire-based devices

  • Materials:

self-assembled NW heterostructures

  • Technology:

field effect controlled NW-based devices

  • Experiments:

electrical & thermal transport, luminescence

  • Targets:

fucntional devices: (Q)ICTs, energy harvesting  Implementation: I. hemogeneous nanowires II. InAs/InP axial heterostructures III. InAs/InP/GaSb radial heterostructures

  • IV. Hybrid metal/semiconductor axial heterostrictures
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SLIDE 8

Nanowire-based devices

  • Materials:

self-assembled NW heterostructures

  • Technology:

field effect controlled NW-based devices

  • Experiments:

electrical & thermal transport, luminescence

  • Targets:

fucntional devices: (Q)ICTs, energy harvesting  Implementation: I. homogeneous nanowires II. InAs/InP axial heterostructures III. InAs/InP/GaSb radial heterostructures

  • IV. Hybrid metal/semiconductor axial heterostrictures
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SLIDE 9

Chemical Beam Epitaxy

NW nucleation gaseous reactant catalyst

Au catalyst

  • III-V

Semiconductors

  • Self-assembled

nanocrystals (bottom-up approach)

  • Chemical beam

epitaxy

Nanowire growth by CBE

Lucia Sorba

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SLIDE 10

EBL-defined dots Au colloids Au film

Nanowire growth by CBE

Daniele Ercolani Valentina Zannier Isha Verma Omer Arif

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SLIDE 11

EBL-defined dots Au colloids Au film Au thin film

Nanowire growth by CBE

Gomes et al., SST 30, 115012 (2015)

Daniele Ercolani Valentina Zannier Isha Verma Omer Arif

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SLIDE 12

EBL-defined dots Au colloids Au film Au thin film

0 10 20 30 40 50 60 70 80 10 20 30

NW Counts

EBL-defined dots

Nanowire growth by CBE

Gomes et al., SST 30, 115012 (2015)

Daniele Ercolani Valentina Zannier Isha Verma Omer Arif

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SLIDE 13

InAs core GaSb shell

200 nm 100 nm

  • Tunable Esaki effect
  • Thermoelectrics in coupled 1D systems
  • 1D-1D Coulomb drag

InAs GaSb e h

~0.8eV ~0.4eV

Radial heterostructures: core-shell NWs

S.Pezzini, … and F.Rossella, in preparation M.Rocci, F.Rossella* et al., Nano Lett. 16, 7950 (2016)

Umesh Gomes Zhara Montmatz Mirko Rocci

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SLIDE 14

Sharp interface between 2 semiconductors

GaAs/InAs

Axial heterostructures

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SLIDE 15
  • Tunneling processes in 0D and 1D (NW-QDs)
  • Shottcky barriers  light emission, optoelectronics

Sharp interface between 2 semiconductors

GaAs/InAs InAs/InP

InP barriers few nm thick inside an InAs NW

Axial heterostructures

  • S. Roddaro
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SLIDE 16
  • Tunneling processes in 0D and 1D (NW-QDs)
  • Shottcky barriers  light emission, optoelectronics

Sharp interface between 2 semiconductors

GaAs/InAs

100 nm

Hybrids

Metal/semiconductor junctions

InAs/InP

InP barriers few nm thick inside an InAs NW

Axial heterostructures

  • J. David, F. Rossella* et al, Nano Lett. 17, 2336 (2017)
  • F. Rossella* et al, Nano Lett. 16, 5521 (2016)
  • F. Rossella et al, Nat. Nanotech. 9, 997 (2014); F. Rossella et al, J. Phys. D: Appl. Phys. 47 394015 (2014)
  • L. Romeo et al., Nano Lett. 12, 4490 (2012); S. Roddaro et al., Nano Lett. 11, 1695 (2011)

M. Gemmi V. Piazza J. David

  • S. Roddaro
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SLIDE 17
  • n(x)  ε(x)  tailoring dielectric response
  • Semiconductor  gate-tunable nano-plasmonics

Homostructures: graded n-type doping

A.Arcangeli, F. Rossella* et al, Nano Lett. 16, 5688 (2016)

s-SNOM

  • A. Tredicucci
  • A. Arcangeli
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SLIDE 18

Ionic liquid gating of InAs nanowire-based FETs

  • V. Demontis, V. Zannier, D. Ercolani, L. Sorba, F. Beltram and F. Rossella
  • S. Ono
  • J. Lieb and B. Sacepe

NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa (Italy) Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa (Japan)

  • Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Neel, Grenoble (France)
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SLIDE 19

T k k S ZT

e l 

 

2

NW Thermoelectrics

SUPPORTED NW devices: Seebeck & Power Factor

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SLIDE 20

T k k S ZT

e l 

 

2

NW Thermoelectrics

SUPPORTED NW devices: Seebeck & Power Factor V0 -VH V0 +VH Differential bias 2VH

S.Roddaro, et al., Nano Research 2014

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SLIDE 21

T k k S ZT

e l 

 

2 S.Roddaro, et al., Nano Lett. 2013

NW Thermoelectrics

SUPPORTED NW devices: Seebeck & Power Factor V0 -VH V0 +VH Differential bias 2VH

S.Roddaro, et al., Nano Research 2014

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SLIDE 22

T k k S ZT

e l 

 

2 S.Roddaro, et al., Nano Lett. 2013 D.Prete et al, in preparation 2018

  • E. Tickonov, et al. Sci. Rep. 2016
  • E. Tickonov, et al. SST 2016

NW Thermoelectrics

SUPPORTED NW devices: Seebeck & Power Factor V0 -VH V0 +VH Differential bias 2VH

S.Roddaro, et al., Nano Research 2014

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SLIDE 23

T k k S ZT

e l 

 

2

NW Thermoelectrics

SUSPENDED NW devices: thermal conductivity

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SLIDE 24

T k k S ZT

e l 

 

2

NW Thermoelectrics

SUSPENDED NW devices: thermal conductivity

  • S. Yazi, et al.,

Nano Research 2015

Optical approach

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SLIDE 25

T k k S ZT

e l 

 

2

NW Thermoelectrics

SUSPENDED NW devices: thermal conductivity

  • S. Yazi, et al.,

Nano Research 2015

Optical approach All-electrical method: Current injection at freq ω Voltage probing at freq 3ω

M.Rocci et al, submitted 2018

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SLIDE 26

Suspended NW devices: strategies for gating?

backgate, side gates poor modulation of σ at temperatures of interest

15% R modulation within +/- 20V (combining BG and SG)

F.Rossella et al, Semiconductor and Semimetals 2018

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SLIDE 27

Ionic liquid gating

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SLIDE 28

Zoology of ionic liquids

CATIONS ANIONS

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SLIDE 29

Zoology of ionic liquids

CATIONS ANIONS Made for each other!

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SLIDE 30

DFT Hexafluorophosphate (coarse grain) + layered electrodes + porosity Molecular dynamics diffusion coefficients

InAs PF6- BMI+

q

  • q
  • V. Tozzini
  • L. Bellucci

InAs

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SLIDE 31

Many additional problems in simulations!  realistic structure of the porosity (→ sponge builder)  Size of the system  The model of electrode must be polarizable Test with mechanically induced diffusion: anion has a larger diffusivity than the cation Tests to  validate the model  optimize the simulation parameters Test with nanoporous charged polarizable electrodes

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SLIDE 32

Electric Double Layer Transistors & Thermoelectrics

  • Test-bed for confinement effects

(DOS discretization)  ZT, S2σ enhancement

  • oxides (SrTiO3, ZnO, Cu2O)

Thin films 2D materials SWCNTs NWs ??

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SLIDE 33

Ionic liquid gated InAs NW FET: realization

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SLIDE 34

Ionic liquid gated InAs NW FET: realization

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SLIDE 35

Ionic liquid gated InAs NW FET: realization

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SLIDE 36

Ionic liquid gated InAs NW FET: realization

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SLIDE 37

Ionic liquid gated InAs NW FET: realization

  • J. Lieb, … and F.Rossella, submitted
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SLIDE 38

Hysteresis (getting rid of)

Parameter space:

  • Temperature
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SLIDE 39

Hysteresis (getting rid of)

Parameter space:

  • Temperature
  • dVLG/dt

(liquid gate voltage Sweep rate)

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SLIDE 40

Hysteresis (getting rid of)

Parameter space:

  • Temperature
  • dVLG/dt

(liquid gate voltage Sweep rate) T = 240 K dVLG/dt < 10 mV/s

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SLIDE 41

Hysteresis (getting rid of)

  • 2
  • 1

1 2 2.0 2.1 2.2 2.3 2.4

I

MIN DS

V

MIN LG

IDS (A) VLG (V)

W

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SLIDE 42

Hysteresis (getting rid of)

  • 2
  • 1

1 2 2.0 2.1 2.2 2.3 2.4

I

MIN DS

V

MIN LG

IDS (A) VLG (V)

W

220 240 260 280 300 1.8 2.0 2.2

  • 1.5
  • 1.0
  • 0.5

1 2 220 240 260 280 300

I

MIN DS (A)

T (K) V

MIN LG (V) 4mV/s

T (K) W (V)

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SLIDE 43

Hysteresis (getting rid of)

  • 2
  • 1

1 2 2.0 2.1 2.2 2.3 2.4

I

MIN DS

V

MIN LG

IDS (A) VLG (V)

W

220 240 260 280 300 1.8 2.0 2.2

  • 1.5
  • 1.0
  • 0.5

1 2 220 240 260 280 300

I

MIN DS (A)

T (K) V

MIN LG (V) 4mV/s

T (K) W (V)

40 80 120 1.8 2.0 2.2

  • 1.5
  • 1.0
  • 0.5

1 2 40 80 120

I

MIN DS (A)

sweep rate (mV/s) V

MIN LG (V)

sweep rate (mV/s) W (V)

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SLIDE 44

Ionic liquid gated InAs NW FET:

  • peration

< 100 pA Full pinch-off

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SLIDE 45

Ionic liquid gated InAs NW FET:

  • peration

< 100 pA Full pinch-off Linear & saturation regions

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SLIDE 46

Ionic Liquid Gate vs back gate

LIQUID GATE

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SLIDE 47

Ionic Liquid Gate vs back gate

n ≈ 5*1017 cm-3 µ ≈ 200 cm2/Vs CBG ≈ 60 aF LIQUID GATE BACK GATE (no liquid)

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SLIDE 48

Ionic Liquid Gate vs back gate

n ≈ 5*1017 cm-3 µ ≈ 200 cm2/Vs CBG ≈ 60 aF CLIQUID GATE ≈ 30*CBG BACK GATE (no liquid) LIQUID GATE BOTH (same device)

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SLIDE 49

Gate induced transition

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SLIDE 50

Gate induced transition

VLG << 0V semiconductor VLG >> 0 V Metal-like

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SLIDE 51

Summary & perspectives

The happy marriage btwn III-V NWs & ionic liquids

  • control of hysteresis
  • FET operation demonstrated
  • Ionic liquid gate versus BG: no match!
  • Onset of charge induced phase transition
  • Suspended NW thermoelectrics
  • Charge induced phase transition in 2D and 1D
  • Ambipolar transport
  • Dynamically controlled p-n junctions
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SLIDE 52

Summary & Perspectives

The happy marriage btwn III-V NWs & ionic liquids

  • control of hysteresis
  • FET operation demonstrated
  • Ionic liquid gate versus BG: no match!
  • Onset of charge induced phase transition
  • Suspended NW thermoelectrics
  • Charge induced phase transition in 2D and 1D
  • Ambipolar transport
  • Dynamically controlled p-n junctions
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SLIDE 53

TE-NW@EUT Fabio Beltram Valeria Demontis Daniele Ercolani Lucia Sorba Valentina Zannier Domenic Prete

  • B. Sacepe
  • J. Lieb

Shimpei Ono

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SLIDE 54

Pisa

(Lungarno Pacinotti)