Instrumentation for the Energy Frontier Ronald Lipton, Fermilab - - PowerPoint PPT Presentation

Instrumentation for the Energy Frontier

Ronald Lipton, Fermilab

High Energy Physics has had remarkable success at the Frontier culminating with the discovery of the Higgs. This success was enabled by equally remarkable progress in technology and instrumentation. These lectures will look at past and current work and perhaps offer a glimpse of the future

Tracking

Let’s think about designing a tracker for a collider detector

• They all look pretty generic
• The solenoidal field defines the
• verall geometry
• Transitions from a barrel to disk

geometry tend to be awkward – Disks provide lower mass at high eta, more normal incidence – The number of hits/area is maximized with disks combined with barrels

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D0

Designing a Tracker - 1

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First let’s decide on the vertex detector

• Scale set by HQ lifetimes
• Minimize Rinner/Router
• Rinner set by occupancy, beam pipe diameter
• Router set by cost of pixelated detectors
• smeas set by technology, mass of sensors
• ILC ~ 5 microns at 1.5 cm (slow, rad soft, monolithic)
• LHC ~ 20 microns at 5 cm (fast, rad hard, hybrid)
• Length set by luminous region, angular coverage

s ip =s meas 1+(Rinner Router )2 (1- Rinner Router ) æ è ç ç ç ç ö ø ÷ ÷ ÷ ÷

b

gct

b = gct ´ 1g » ct » 30 - 300 microns

1g

Tevatron luminous region ~25 cm long D0SMT

Designing a Tracker - 2

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Momentum Resolution

• Resolution proportional to s/BL2
• For a high momentum track f=f0+kr k=1/pt
• We effectively want to measure Df (circumferential

distance di)

• Most important information is at the outer radius and

near the origin

• Intermediate layers primarily provide pattern recognition

2E-12 4E-12 6E-12 8E-12 1E-11 1.2E-11 1.4E-11 1.6E-11 1.8E-11 2E-11 0.00 20.00 40.00 60.00 80.00 100.00 120.00 140.00 ALPHA Layer Radius (cm)

Layer Impact on momentum resolution (Seiden SDC-91-00021)

ai = (C r

i 2

s i

• B r

i

s i

2 )

f0 k æ è ç ç ö ø ÷ ÷= A

• B
• B

C æ è ç ö ø ÷ å r

idi

s i

2

å r

i 2di

s i

2

æ è ç ç ç ç ç ö ø ÷ ÷ ÷ ÷ ÷

Alpha estimates the effect

• f the layer on momentum

resolution

k =

k(curvature) = ai

å

di

Designing a Tracker - 3

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The Forward Direction

• As we move forward the we begin to lose ∫Bdl and

momentum resolution

• Disks become more cost effective/hit than barrels
• We can recover some momentum resolution with

precision disks

• We want to measure phi well, r not as well, but this is

difficult in a disk geometry

• Intermediate disks have little effect on resolution

CMS FPIX Plaquette Tiled 3D pixel structure LHCB VELO R and F sensors

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Possible design for CMS Phase 2 tracker with extension to improve acceptance for forward physics (H➛tt, Higgs self coupling, WW scattering)

Doublet strip modules For track trigger

Doublet pixel/strip modules for track trigger Forward pixel diska For extended h coverage

Silicon Tracking

This has become the “baseline” technology for the energy frontier. It is:

• Precise ~ micron-level resolution
• Moderate to low mass (depends on density,

cooling, electronics)

• Fast ~ can achieve sub-nanosecond resolution
• Radiation hard – can be designed to operate to 1016/cm2 fluence
• Costly? $10/cm2 for CMS sensors $3/cm2 for CMOS electronics

We can profit from the huge technical advances and infrastructure in the semiconductor industry

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Signal and Noise

• What is the thinnest “practical” silicon

tracker?

• Noise –

Increasing gm costs power (gm~Id), minimize Cdet->pixels ~ 10 ff possible minimal coupling to other electrodes

• Power – assume id=500 na, pitch 25 microns
• Signal – shoot for 25:1 s/n

–80 e/h pairs/micron

• Speed – let’s say 5 ns
• Mechanical –

–Can thin to ~10 microns

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ENC2 = (Cdet + Cgate)2 a

1g2kT

gmts

10 100 1000 10000 50 100 150 200 250 300 Signal/Noise Ratio Detector Thickness (microns)

Silicon Detector

How we connect the detectors to the electronics, cool them, and mount them is the name of the game…

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SiO2 Al n+ p+

Hybrid Pixel Interconnect using bump bonds hybrid Analog cable SVX4 hybrid Analog cable SVX4

Detector/Electronics Integration Technologies

• Monolithic active pixels –

collect charge in a few mm epitaxial layer (STAR, ALICE)

• Charge coupled device (SLD)
• DEPFET (Belle II)
• Silicon on Insulator…
• 3D Integration…
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p+ p+ n+ rear contact drain bulk source p s y m m e t r y a x i s n+ n internal gate top gate clear n

• n+

p+

• +

+ + +

• ~1µm

50 µm

• -
• -
• MAPS

CCD DEPFET SOI 3D

Solving Problems - MAPS

MAPs – technology used in cameras using charge collection by diffusion in a thin(~5-15 mm) epitaxial layer Slow-charge collection by diffusion Charge lost to parasitic PMOS Thick, high resistivity epitaxial layers Fully depleted substrates 4 Well process 3D assemblies Low S/N Thinning and backside processing

(IPHC-DRS)

(RAL)

(IPHC-DRS)

Technologies - Device-scaling

Rapid initial decrease in cost

• Slower leveling

Voltage no longer scaling (P~CV2 f) Analog becomes harder at feature sizes below 65 nm Designs become very costly 8” 130 nm - $500k 12” 65 nm - $1.9M

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(Deptuch, IF ASIC meeting)

Technologies- Bonding Costs and Yields

Current and projected costs and yields for sensor/readout integration technologies

Technologies- Three Dimensional Electronics

A 3D-IC technology is composed of two or more layers of active electronics or sensors connected with through silicon vias

• It enables intimate interconnection

between sensors and readout circuits

• It enables unique functionality

– Digital/analog/ and data communication tiers – Micro/macro pixel designs – Correlate information

• Wafer thinning enables low mass, high

resolution sensors

• Etching of vias (3D) through silicon bulk
• Bonding technologies enable very fine

pitch, high resolution pixelated devices

• Commercialization of 3D wafer bonding

can reduce costs for large areas

• Unique circuit/sensor

MIT-LL 3D-IC process FDSOI oxide-

• xide bonding

Face-Face Back-Face Ziptronix / licensed to Novati

Xilinx 3D-based FPGA

Pixelization- 3D Interconnect

Technology based on:

• Bonding between layers

– Copper/copper – Oxide to oxide fusion – Copper/tin bonding – Polymer/adhesive bonding – Cu stud

• Through wafer via formation and

metalization

8 micron pitch, 50 micron thick oxide bonded imager (Lincoln Labs) 8 micron pitch DBI (oxide-metal) bonded PIN imager (Ziptronix) Copper bonded two-tier IC (Tezzaron)

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IBM 32 nm 3D technology PCB Interconnect

Opportunities in 3 Dimensions

Handle wafer sensor trenches Buried

• xide

readout IC and pads 200 micron

CMS Level 1 track trigger

• Correlate hits in adjacent layers

to filter out low momentum tracks CMS – Use stack of 3D tiers to emulate tracker layers for CAM –based track recognition Use TSVs to connect each SiPM subpixel to quenching, timing, and control electronics Combine active edge and 3D electronics to produce tiled sensors combined with ROICs for large area arrays

Example - Track Trigger

In CMS the L1 trigger will be saturated with multiple interaction background

• Use tracking information in the L1

trigger – Send hits from tracks with Pt>2

• ff detector for L1

– Correlate hits from sensors separated by ~ 1 mm – Correlation done on-module

• To do this we need novel

interconnect technology which allows the chip to “see” signals from top and bottom sensors – Through-silicon-vias allows single layer of electronics to see both

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17 Analog signals Short (1.25 mm) strips Long (2.5 cm) strips Carbon Foam Spacer Short (0.125 cm) strips Flex Jumper ROIC TSVs Via-Last Module (FNAL design) 250m

• 50 x 250 micron through silicon vias
• Bump bonded short strip sensors
• Analog signals through flex jumper
• 2.5 cm long strips (set by chip size)

High Speed silicon

Two techniques to attain ~10 ps resolution

• Fast parallel plate structure using 3D

detector technology

• Use amplification to produce a large signal

from initial electron arriving at gap structure

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Workshop[ 11/16/2012 18

Fast parallel plate structure (Da Via) Gain-based structure (Sadrozinski)

READOUT FLEX

Coarse SiPM Tier Fine SiPM Tier Coincidence and active quench TSV

Use two layers of 3D SiPMs to produce fast, low power, low noise trackers (Lipton)

Radiation Damage in Silicon

• Radiation

– Electromagnetic (g, b, x-ray).

• Ionization, e-hole pair creation.

– Hadronic (n, p, p). Damage to the bulk material caused by displacement of atoms from lattice sites in addition to ionization

• Electronics are affected primarily by

ionization – Charge buildup in insulating layers – Charge injection into sensitive nodes

• Sensors are affected by bulk damage

and ionization – Crystal structure damage – Introduction of traps – Introduction of mid-band states

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• A. Vasilescu (INPE Bucharest) and G. Lindstroem (University of Hamburg),

Displacement damage in silicon, on-line compilation

Radiation effects on Detectors

• HEP silicon detectors used at the Tevatron

and LHC are primarily affected by bulk

• damage. Associated electronics are

affected by primarily by ionization damage.

• Detectors are unique

– Lightly doped silicon – Thick structures – Regular array of electrodes

• Several different bulk effects:

– Increase in leakage current – Changes in doping concentration – Increased charge trapping

• All of these depend on time and

temperature, sometimes in complex ways

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1011 1012 1013 1014 1015

F

eq [cm

• 2]

10-6 10-5 10-4 10-3 10-2 10-1

D

I / V [ A / c m

3]

n-type FZ - 7 to 25 KW cm n-type FZ - 7 KW cm n-type FZ - 4 KW cm n-type FZ - 3 KW cm n-type FZ - 780 W cm n-type FZ - 410 W cm n-type FZ - 130 W cm n-type FZ - 110 W cm n-type CZ - 140 W cm p-type EPI - 2 and 4 KW cm p-type EPI - 380 W cm

[M.Moll PhD Thesis] [M.Moll PhD Thesis]

Idet = I0 +aF ´ Volume a = 2-3´10-17A / cm

electrons holes extrapolated values

Ref 4. Depends on temperature

Designing Radiation Hard Electronics

• Radiation generates e-hole

pairs in insulating oxides – Electrons are mobile and are removed by the gate- substrate field – Holes are trapped – either in the bulk or by deeper traps near the silicon-oxide junction – Holes can recombine with tunneling electrons from the silicon-> thin gate oxides in modern deep submicron electronics are intrinsically radiation hard

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Gate thickness (nm) Tranisistor DV/Rad

Designing Radiation Hard Detectors

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• Leakage current is universal
• Generates shot noise, thermal

effects – Reduce thickness – Run cold to reduce current, avoid thermal runaway

• Trapping reduces signal mean free path

– Thin detectors – Increase internal fields

• Run Cold (~-20 deg C)

– Freeze-in p-type impurities

• Use 3D detectors

– Etch electrodes deep into silicon – Full thickness for charge collection, short drift distance

• Use Diamond sensors

(Parker, Kenney)

Mechanics

These are complex engineered systems

• Mechanics has

central effects

• n physics

performance

• We sometimes

focus too much

• n “physicsey”

things like radiation damage and give short shrift to mechanics

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CMS

Material

• Controlling material is critical to physics performance.

– That is apparent in vertex detectors and trackers, where multiple scattering limits spatial and momentum resolution. – The production of additional particles increases backgrounds and occupancies and complicates track finding, track tracing, and event reconstruction. – Stability, deflections, and distortions depend on the weight to be supported, the geometry of structures, environmental changes from fabrication to operation, and material properties.

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New Materials

• Carbon fiber composites
• Carbon derivatives (C-C, Pyrolytic graphite, etc.)
• Beryllium
• Titanium alloys
• Ceramics
• Advanced compounds (SiC, BN, SiN, diamond, etc.)
• Conducting polymers and carbon conductors
• Foams
• Adhesives
• Electrical circuit components
• Liquid / 2-phase cooling tubes
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Power

Current LHC detectors dissipate more than half their power in the

• cables. Future, more ambitious detectors will utilize even more

power:

• High speed front end electronics
• GHz Waveform digitizers
• Pixelated sensors
• Higher readout bandwidth

To address these problems all future experiments are examining power delivery

• ptions
• Pulsed power (ILC, CLIC)
• DC-DC conversion (CMS, ILC, CLIC)

– High efficiency, rad hard high voltage ratio converters capable

• f operating in a magnetic field.
• Serial powering (ATLAS, think Xmas tree lights)
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Cooling

An efficient, low mass cooling scheme should have:

• Efficient heat transfer (2-phase)

– CO2 systems

• Low mass
• Good thermal contact to

electronics and sensor

• Well engineered

– Almost all hadron collider experiments (except D0) have had serious cooling issues

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Super B, LHCb micromachined channels DEPFET air cooling thermal tests

Power and Cooling

• Data transmission – 10-200 pj/bit ~ 5-10 Gbit/sec
• Amplifier/readout ~100 mW/cm2
• Sensor IL ~ 1ma/100 cm2 x 500 V (high radiation) @ -25 deg C
• DC-DC converter supplies power at 60-80% efficiency

5x10 cm module – 7.5 Watts If our tracker is 100 m2 -> 150 kW !!!

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Pixelated Sensor Amplifier Readout Data Transmission DC-DC conversion Support structure Cooling pipes

What do we do?

• Data transmission

– Low power (less rad had?) transmission (10pj/bit) – Lower bandwidth (process on detector) (2.5 Gb/sec)

• Amplifier/readout

– Low power design – limit functionality? – Smaller feature size no longer too helpful (Vdd~1V) – May be be able to achieve 75 mW/cm2

• Thin Sensor to 100 microns

– Vd~T2, lower volume 0.3 ma @ 50V

• High frequency DC-DC converter

– 90% efficiency Can get to 85 kW – not so different than current CMS

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Data Transmission

Industry is driving low power, high bandwidth data transmission

• Low power optical data transmission

– Modulators rather than laser diodes – Mach-Zender – interferometer utilizing material with strong electro-

• ptic effects

– Radiation hard transceivers

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Current driver Laser (VCSEL) Receiver PIN diodes Optical Tx Optical Rx

• Elec. Tx
• Elec. Rx

Voltage driver Modulator Receiver PIN diodes Optical Tx Optical Rx

• Elec. Tx
• Elec. Rx

Laser (CW) Monolithically integrated Silicon photonic device

Muon Collider - Accelerator

A muon collider would accelerate and cool a beam of muons and bring them into collision for ~1000 turns in a circular collider

• It is the only lepton collider that can plausibly scale beyond 2-3 TeV with

acceptable cost and power – Given the lack of new physics at 8 TeV LHC such a capability becomes increasingly interesting – Physics capabilities are similar to e+e- colliders, with additional ability to explore s-channel h and H/A, but worse beam background, lower polarization

• It can provide a phased approach to implementation

– Move gracefully from n factory to Higgs factory to high energy collider – complementing the rare decay and neutrino programs – The phasing and small footprint makes the program affordable

• But the Muon beam decays:

– For 62.5-GeV muon beam of 2x1012, 5x106 dec/m per bunch crossing – For 0.75-TeV muon beam of 2x1012, 4.28x105 dec/m per bunch crossing, or 1.28x1010 dec/m/s for 2 beams; 0.5 kW/m.

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Ionization Cooling

Muons produced by a high intensity target are collected and initially cooled by bunch rotation.

• Ionization cooling is based
• n the idea that energy

losss occurs in x,y,z but momentum is restored by RF in z only.

• Cooling is limited by the

heating effect of multiple scattering

• Low Z absorber in RF cavity

with solenoid field

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Emittance change Energy loss cooling term Multiple scattering Heating term

Accelerator Challenges

• Ionization Cooling

– Very high field (40T) high temp superconducting magnets – 6 dimensional cooling

• RF breakdown in magnetic fields

– Seems to be solved

• Neutrino radiation ( < 10% x DOE

limit at site boundary?) – Probably OK at 3 TeV, harder at 6 TeV – Must limit length of straight sections (~ meters)

• Magnet shielding from beam decay

heat loads Are any of these deadly to the Muon Collider concept? – subject of MAP

Ronald Lipton 8/11/2011 33

Figure of merit: Integrated Luminosity/Wall plug power

34 J.P.Delahaye @ MIT Workshp; April 10,2013 Review of HIGGS Factory technology options

ILC ILC ILC CLIC CLIC CLIC PWFA PWFA PWFA PWFA LEP3 TLEP Super-Tristan FNAL IHEP IHEP SLAC/LBL Muon Collider Muon Collider Muon Collider 1.00 10.00 100.00 0.00 0.50 1.00 1.50 2.00 2.50 3.00

C.M. colliding beam energy (TeV)

ILC CLIC PWFA LEP3 TLEP Super-Tristan FNAL IHEP SLAC/LBL Muon Collider

HIGGS

𝑮𝒑𝑵 ∝ 𝑴TOT / PWT

luminosity X 1031 per MW

Evolution of Muon Facilities

J.P.Delahaye MAP Collaboration workshop (June 19, 2013) 35

0.2–0.8 GeV 0.8 – 2.8 GeV

Linac + 2RLA PX2 (3 GeV, 3 MW) Accum Compr

Proton Driver m Storage Ring Acceleration Front End Targe t

PX4 (8 GeV, 4 MW)

235m

1-3 MW Neutrino factory 4 MW Higgs factory 3-10 TeV Muon Collider

LBNE T

• F

a r D e t e c t

• r

i n S a n f

• r

d ( 1 3 k m ) Buncher/ Accumulator Rings & Target Linac + RLA SC 325MHz to ~5 GeV 5 G e V N F D e c a y R i n g : n n s t

• S

a n f

• r

d F r

• n

t E n d + 4 D + 6 D RLA to 63 GeV + 300m Higgs Factory nSTORM + Muon Beam R&D Facility

J.P.Delahaye 26

Preliminary work in progress (collab. project X)

MAP Collaboration workshop (June 19, 2013)

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Muon collider Higgs factory beam transport and detector

Muon Collider Background – 1.5 TeV

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Non-ionizing background ~ 0.1 x LHC But crossing interval 10ms/25 ns 400 x Detectors must be rad hard Dominated by neutrons – smaller radial dependence

Muon Collider Detector

How do we design a detector for a muon collider?

• Start with design for physics –

ILC, CLIC detectors – SiD is the best match

• Background rejection is clearly

the dominant issue – Design the machine-detector interface and model bkd – Understand the compromises needed to reject background

• Is it plausible, what are the

physics impacts?

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Neutrons/cm^2/bunch

Much of the Background is Soft

39

And Out of Time

(Striganov)

g m- m+ e+/- h0 h+- g m- m+ e+/- h0 h+-

Timing is clearly crucial to reduce backgrounds

• Background Path length in silicon detector vs de/dx

40

Detector thickness Angled tracks MIP

Background Inside a silicon detector:

dE/dX Path in detector

Neutrons

electrons Compton High energy conversions

soft conversions

positrons Time of energy deposit with respect to TOF from IP

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Tracker Implementation

• Tracker sufficiently pixelated so

background occupancy is acceptable – 20 micron vertex – 100 micron x 1 mm tracker

• Multi-hit/waveform digitize hits

within ~20 ns window with ~0.5 ns resolution – Plausible given signal/noise, power requirements – Track fit now includes time

• f hit to accommodate

slower particles from IP Problems are really power and interconnect

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In time pion In time slow k or p Out of time n, g … Pixel waveforms Simulation

• f 6 ns peak,

100 ps jitter 100 x 1 mm pixel 65 nm Front end (J. Kaplon, CERN) Threshold Chan N Chan M

SiD(ILC)-Like Tracker

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SiD-like tracker with CMS-like 100m x 1 mm strips 20 micron pixel Vertex barrel 50 micron pixel Vertex disks Tungsten absorber cone

Calorimeter Implementation

Fast timing will lose some information from neutrons Backgrounds form a pedestal in each cell – fluctuations determine resolution

• Segmented total absorbtion

calorimeter – Merge PFA and Dual RO concepts – Design to control neutrons – Utilize prompt arrival and EM shower shape to identify photons andelectrons

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20 GeV p- No DR correction 20 GeV p- With DR correction No slow neutron signal: Before Dual Read out correction: Mean: 15.5 GeV (reduced by 13.6 %) s: 1.21+/-0.04 GeV After DR correction: Mean: 20.5 GeV s: 0.68+/-0.02 GeV (Wenzel)

Event Yields

Based on counting experiment stepping the beam across the Higgs resonance

• I expect that detector

efficiencies and analysis cuts will reduce yields by 10-20% These results will have to be confirmed with full simulation including background

Summary and Conclusions

This was a glimpse of instrumentation at the energy frontier I gave short shrift to or, neglected many things:

• Diamond detectors
• Triggering
• Data processing

Hopefully our Instrumentation Frontier report will provide a more balanced overview. There are many opportunities for young people to get involved

• at Snowmass
• On LHC upgrades
• Generic detector R&D projects
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references

• Particle Data Group web site
• V. Radeka, Ann. Rev. Nucl. Particle Sci. 38 (1988) 217.
• F. Sauli (GEM) Nucl. Instr. and Meth. A, 386 (1997), p. 531
• Spieler - http://www-physics.lbl.gov/~spieler/USPAS-MSU_2012/index.html
• Jaakko Härkönen, GSI/FAIR/NUSTAR/S-FRS seminar, Kumpula 6 October 2008
• Systematic Errors and Alignment for Barrel Detectors, A. Seiden. Mar 1991. 8
• pp. SDC-91-021
• Velo –D.E. Hutchcroft, Initial results from the LHCb Vertex Locator, Nuclear

Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 648, Supplement 1, 21 August 2011, Pages S49-S50, ISSN 0168-9002, http://dx.doi.org/10.1016/j.nima.2010.12.216.

• Ren-yuan Zhu (CalTech) -

http://psec.uchicago.edu/workshops/fast_timing_conf_2011/

• J.B. Birks, The Theory and Practice of Scintillation Counting, New York, 1964
• G.F. Knoll, Radiation Detection and Measurement,New York, 1989
• http://www.kip.uni-

heidelberg.de/~coulon/Lectures/Detectors/Free_PDFs/Lecture4.pdf

• David Neuffer – Introduction to Muon Cooling
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May 8th 2013 Hans Wenzel

Effect of dual read out correction: g ‘s from neutron Capture discarded

Before Dual Read out correction: Mean: 15.5 GeV (reduced by 13.6 %) s: 1.21+/-0.04 GeV After DR correction: Mean: 20.5 GeV s: 0.68+/-0.02 GeV 20 GeV p- No DR correction 20 GeV p- With DR correction