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An X-ray fluorescence spectrometer using CMOS-sensors
ADvanced MOnolithic Sensors for Supported by BMBF (06FY9099I and 06FY7113I), HIC for FAIR, GSI and EU-FP7
Institut fr Kernphysik Frankfurt for the CBM-MVD-collaboration - - PowerPoint PPT Presentation
AD vanced MO nolithic S ensors for An X-ray fluorescence spectrometer using CMOS-sensors Dennis Doering, Michael Deveaux Institut fr Kernphysik Frankfurt for the CBM-MVD-collaboration Sensor development: IPHC Strasbourg 1) Real-time water
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ADvanced MOnolithic Sensors for Supported by BMBF (06FY9099I and 06FY7113I), HIC for FAIR, GSI and EU-FP7
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Sample
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P- P+
e- e-
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P- P+ Diode Epitaxial Layer P-Well Photon Depleted zone
2 4 6 8 10 12 14 16 18 20 22 24 26 200 400 600 800 1000
Pixel charge smearing Ag Kβ Ag Kα (cal) One "seed" pixel Fluorescence spectrum of the setup
Counts [1/36e] Collected electrons [ke]
e- e- Cd-109-source (support is built up
Ag Kα,Kβ Chip (PCB contains Ba)
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P- P+ Diode Epitaxial Layer P-Well Photon Depleted zone
e- e-
2 4 6 8 10 12 14 16 18 20 22 24 26 200 400 600 800 1000
Cu Kα Ba Lα Ag Kβ Ag Kα (cal) One "seed" pixel Cluster Fluorescence spectrum of the setup
Counts [1/36e] Collected electrons [ke]
Cd-109-source (support is built up
Ag Kα,Kβ Chip (PCB contains Ba)
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P- P+ Diode Epitaxial Layer P-Well Photon Depleted zone e- e-
2 4 6 8 10 12 14 16 18 20 22 24 26 50 100 150 200 250
Ba Lα V Kα Cu Kα Zn Kα Ag Kβ Ag Kα (cal) Depleted zone Fluorescence spectrum of the setup
Counts [1/36e] Collected electrons [ke]
Cd-109-source (support is built up
Ag Kα,Kβ Chip (PCB contains Ba)
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P- P+ Diode Epitaxial Layer P-Well Photon Depleted zone e- e-
2 4 6 8 10 12 14 16 18 20 22 24 26 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
Ba Lα V Kα Cu Kα Zn Kα Ag Kβ Ag Kα (cal) Depleted zone Cluster Fluorescence spectrum of the setup
Counts [1/36e] Collected electrons [ke]
Cd-109-source (support is built up
Ag Kα,Kβ Chip (PCB contains Ba)
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100 200 300 400 500 600 700 5 10 15 20 25
Zn Kα Cu Kα V Kα Energy of the identified peak [keV] Charge collected [ADC] Ba Lα Ag Kβ Ag Kα Mn Kα Mn Kβ
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SiO2 N+ P+ P- P+ Epitaxial Layer P-Well Substrate
Sensing diode
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SiO2 N+ P+ P- P+ Epitaxial Layer P-Well Substrate
Sensing diode
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Cd-109-source Cu-foil Ag Kα,Kβ
2 4 6 8 10 12 14 16 18 20 22 24 26 28 75 150 225 300
Cu Kβ Ag Lα Ag Kβ One "seed" pixel Pegasus, T= +20°C Cd-109-source
Counts [1/40 e] Collected energy [keV]
Cu Kα Ag Kα Calibration peak
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Cd-109-source Cu-foil Ag Kα,Kβ
2 4 6 8 10 12 14 16 18 20 22 24 26 28 75 150 225 300
Cu Kβ Ag Lα Ag Kβ One "seed" pixel Depleted zone Pegasus, T= +20°C Cd-109-source
Counts [1/40 e] Collected energy [keV]
Cu Kα Ag Kα Calibration peak
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6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 100 200 300 400 500 600 700 800 900 1000
T= +20°C Cu-Kα= 8135 eV T= -20°C Cu-Kα= 8035 eV
Counts [1/80 e] Collected energy [keV]
Literature: Cu-Kα1=8047 eV Cu-Kα2=8027 eV
20,0 20,5 21,0 21,5 22,0 22,5 23,0 23,5 24,0 50 100 150 200 250 300 350 400 450 500 550 600
T= +20°C T= -20°C
Counts [1/80 e] Collected energy [keV]
σ+20°C=637eV σ-20°C=215eV
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Cd-109-source Cu-foil Ag Kα,Kβ Ag Kα,Kβ +Cu Kα
2 4 6 8 10 12 14 16 18 20 22 24 26 28 150 300 450 600 750 900 1050 1200 1350
Cu Kβ Ag Lα Ag Kβ Reference Cu-inlay Pegasus, T= -20°C Cd-109-source
Counts [1/80 e] (norm. to detected Ag Kα-Photons) Collected energy [keV]
Cu Kα =8040 eV σ=122eV Ag Kα
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