SLIDE 1
Flash Memory and Micro SD Card
Presented by:
Krishna Goyal (200601195) Anirudh Tripathi (200601141)
SLIDE 2 OUTLINE
- Memory
- Volatile and Nonvolatile memory
- EPROM and EEPROM memory
- Flash memory
- NAND and NOR Flash memory
- Flash Memory operations
- Advantage and Disadvantage of Embedded Over Stand Alone
Flash Memory
- Micro SD card
- Summary
- References
SLIDE 3 Memory
- The terms “storage” or “memory” refer to the parts
- f a digital computer that retain physical state (data)
for some interval of time, possibly even after electrical power to the computer is turned off.
- A computer system's memory is crucial to its
- peration; without memory, a computer could not
read programs or retain data. Memory stores data electronically in memory cells contained in chips. It is usually measured in kilobytes, megabytes, or gigabytes.
- Memory is classified into volatile and non-volatile
memory.
SLIDE 4 Memory Classification
NON-VOLATILE SRAM DRAM NVRAM VOLATILE ROM EEPROM EPROM PROM Flash Memory MRAM Magnetic Devices Floppy Disk Hard Disk
SLIDE 5 Volatile Memory
- The most widely used form of primary storage today
is a volatile form of random access memory, meaning that when the computer is shut down, anything contained in random access memory (RAM) is lost.
- DRAM used for main memory
- SRAM used for cache
SLIDE 6 Non-Volatile memory
- EEPROM, EPROM, FeRAM, FLASH, NVSRAM and
ROM are different types of non-volatile memory.
- The main differences are in the memories relative
cost per bit and the flexibility to accommodate code changes.
- nonvolatile memory, NVM or non-volatile storage, is
computer memory that can retain the stored information even when not powered.
SLIDE 7 EPROM
- Erasable Programmable Read Only Memory also
known as UV-EPROM is a form of non-volatile
- memory. It is programmed electrically at high
voltage using a charge that is injected into the floating gate. Data is erased by exposing the EPROM to UV light. The memory chip may then be re- programmed with new data.
- EPROMs are expensive because of the special quartz
window packaging required for erasing
- capability. EPROMs are quickly being replaced by
FLASH memory devices.
SLIDE 8 EEPROM
- (Electrically Erasable Programmable ROM) A
rewritable memory chip that holds its content without power. EEPROMs have a lifespan of between 10K and 100K write cycles, which is considerably greater than the EPROMs that came before them.
- Unlike E-PROMs, which have to be placed under UV
light for erasure, EEPROMs are erased in place. They use a floating gate to hold a charge like an E-PROM and have a second transistor for erasure.
SLIDE 9 Flash Memory
- Flash memory is a programmable, read-only,
nonvolatile memory similar to EPROM and EEPROM. Although flash memory is a derivative of EPROM and EEPROM.
- EEPROM is automatically erased before a WRITE on a
byte basis. Flash is either erased in blocks or the entire chip at once.
- Flash memory is made of either NOR or NAND gates.
SLIDE 10 Flash Memory
- Flash memory is used in memory card and flash
drives to transfer data.
- They are removable and re-writable and are much
shorter than floppy disk and hold more information.
- Flash memory is used in devices as cameras , mobile
phones and video games.
- Examples:-BIOS chip, compact flash, Smart media,
Memory stick, Memory card.
SLIDE 11
Flash Memory Cell
SLIDE 12
Memory Architecture Diagram
SLIDE 13
USB Flash Drive
SLIDE 14 NAND and NOR Flash Memory
- NOR flash supports random access and is used for instruction
storage and execution known as "execute in place" (XIP). With a lifespan of about 100K write cycles, erasing and writing take several seconds, but reading is fast.
- NAND flash, developed by Toshiba, reads and writes
sequential, disk sector-sized blocks of 512 bytes, but must be erased in blocks from 16KB to 128KB. Less expensive than NOR, NAND flash can be rewritten up to a million times. Writing and erasing NAND flash is also faster than NOR.
SLIDE 15 Flash Memory Operation
- Flash memory stores information in an array of
floating gate transistors, called "cells", each of which traditionally stores one bit of Information
- Newer flash memory devices, sometimes referred to
as multi-level cell devices, can store more than 1 bit per cell, by using more than two levels of electrical charge, placed on the floating gate of a cell
SLIDE 16 Flash Memory Operation
- Most modern NOR flash memory components are
divided into erase segments, usually called either blocks or sectors.
- All of the memory cells in a block must be erased at
the same time.
- Programming in NOR , generally performed one byte
- r word at a time.
SLIDE 17 NAND vs. NOR
- NAND's advantages are fast write (program) and
erase operations, while NOR's advantages are random access and byte write capability
- NOR's random access ability allows for execute in
place (XiP) capability, which is often a requirement in embedded applications
SLIDE 18
NAND/NOR Characteristics
SLIDE 19 NAND vs. NOR
- The disadvantages for NAND are slow random access,
while NOR is, its slow write and erase performance.
- The real benefits for NAND are faster program and
erase times, as NAND provides over 5 Mbytes/s of sustained write performance.
- The block erase times are 2 ms for NAND and 700 ms
for NOR.
- Clearly, NAND has several significant positive
attributes.
- However, it's not well-suited for direct random access.
SLIDE 20 Advantage of Embedded Over Stand-Alone Flash Memory
- Higher System Speed
- Lower Power
- Higher Reliability
- Improved Security
- System-On-Chip(SOC) Capability
- Lower System Cost
SLIDE 21 Disadvantage of Embedded Over Stand-Alone Flash Memory
- Single Source
- Increased Process Complexity
- Increased Test Cost
- Density Limitation
SLIDE 22 Introduction to Micro SD Card
- MicroSD card is the memory card that is small and
thin with SDMI(Secure Digital Music Initiative).
- It is Flash based memory card designed to meet
security, capacity, performance and environment requirements inherent to used in emerging audio and video electronic devices.
- One of the great advantages of the Micro SD Cards is
that they are backward compatible with many electronic devices that use standard SD memory cards.
SLIDE 23
Micro SD Card Interface Description
SLIDE 24 Features
- Performance
- Data Transfer Rate Read up to 23 MB/sec
(Max)
- Data Transfer Rate Write up to 20 MB/sec
(Max)
SLIDE 25 Features
- Add microSD card adapter can be use in SD
card socket.
- Support CPRM code.
- No external programming voltage required.
- SD card protocol compatible.
- Correction memory field errors.
- Easy handling for end user.
SLIDE 26 SD/SPI Bus Comparison
microSD card using SD bus
channel( clock, command, 4 data lines)
transfer
- Single or multiple block
- riented data transfer.
microSD card using SPI bus
- Three wire serial data bus
( clock, dataIn, dataOut)+ card specific CS signal(hard wired card selection)
- Optinal non protected data
transfer mode available.
- Single or multiple block
- riented data transfer.
SLIDE 27
MicroSD card pinpout SD mode
SLIDE 28
MicroSD card pin out SPI mode
SLIDE 29
Product Specification
SLIDE 30
Product Specification
SLIDE 31
Product Specification
SLIDE 32 Summary
- Flash technology is constantly changing, providing faster
program and erase cycles, a bigger number of guaranteed erase and re-program cycles and longer data retention. Flash technology put on-chip with microcontrollers has now reached the point, where the in-application usability greatly improved.
- In the past, storing of configuration data that stays available
after a power-down and power-up cycle required an additional EEPROM or other storage device. Today, this functionality can be provided by on-chip Flash, further decreasing the parts count of embedded applications: an additional external EEPROM or SRAM might not be required anymore.
SLIDE 33 References
- http://www.puremobile.com/flash-memory-
cards.asp
- http://www.esacademy.com/faq/docs/flash/index.ht
m
- http://electronics.howstuffworks.com/flash-
memory.htm
- http://en.wikipedia.org/wiki/Flash_memory
- http://www.dharmanitech.com
SLIDE 34 References
- Paolo Cappelletti, Carla Golla, Piero Olivo, Enrico
Zanoni “Flash Memories”, Kluwer Academic Publishers.
- Joe E. Brewer and Manzur Gill “Nonvolatile Memory
Technologies with Emphasis on Flash ”, Wiley Interscience