EVERSPIN COMPANY OVERVIEW Breakthrough Application-Specific Memory Technology JANUARY 2017 Confidential Information
Safe Harbor Statement Forward-Looking Statements This presentation contains “forward - looking statements” that involve risks, uncertainties and assumptions. If the risks or uncertainties materialize or the assumptions prove incorrect, our results may differ materially from those expressed or implied by such forward-looking statements. All statements other than statements of historical fact could be deemed forward-looking statements, including, but not limited to: any estimates of addressable market size and our ability to capture that market, market trends and market opportunities, customer growth, product availability, technology developments, or other future events; any statements about historical results that may suggest future trends for our business; any statements regarding our plans, strategies or objectives with respect to future operations or business performance; any statements regarding future economic conditions; and any statements of assumptions underlying any of the foregoing. These statements are based on estimates and information available to us at the time of this presentation and are not guarantees of future performance. Actual results could differ materially from our current expectations as a result of many factors, including, but not limited to: market adoption of our products; our limited operating history; our ability to raise capital; our history of losses; our rate of growth; our ability to predict customer demand for our existing and future products; our ability to hire, retain and motivate employees; the effects of competition, including price competition; technological, regulatory and legal developments; and developments in the economy and financial markets. We assume no obligation, and do not intend, to update these forward-looking statements, except as required by law. 2 Confidential Information
Everspin’s MRAM products offer the persistence of non-volatile memory with the speed and endurance of RAM 3 Confidential Information Confidential Information
Everspin’s MRAM solutions allow customers to reduce form factor, improve system performance and simplify implementation Everspin Solution Existing Solution* MRAM Advantage 4TB 5.4 TB 300K Random Read 4KB IOPS 900K Random Read 4KB IOPS 100K Random Write 4KB IOPS 300K Random Write 4KB IOPS 4 4 Confidential Information Confidential Information * Existing Solution pictured above is representative only.
MRAM Roadmap Expands the Market Opportunity 1 ST Gen 3 RD Gen 2 ND Gen 64Mb 256Mb 1Gb 128kb-16Mb Toggle MRAM 5 5 Confidential Information Confidential Information * Everspin estimate.
Everspin’s Target Markets Increasingly Demand MRAM Industrial Automotive & Transportation Enterprise Storage Applications Applications Applications Infotainment Electric Brakes Enterprise SSD Enterprise HDD Automation Network Transmission Engine RAID Server PLC Smart Meter Control Management Storage Motor Control Casino Gaming Tachograph/ Event Recorder Appliance Lighting Odometer ADAS Customer Need MRAM Feature Customer Need MRAM Feature Customer Need MRAM Feature Continuous data logging Virtually unlimited Continuous data logging Virtually unlimited write Reduce storage latency Write 100,000x faster endurance cycle than NAND block writes Protect data on power Persistent data Protect data on power Persistent data Protect data on power Persistent data, non- loss loss loss volatile Harsh environment Industrial and extended Temperature extremes Automotive grade Space constraint in Eliminate SuperCaps temperatures drives Data retention 20 years Regulatory Data retention for 20 Faster applications Persistence without years NAND, batteries Simple to design SRAM and SPI interfaces Rapid system rebuild Metadata instantly restored 6 6 Confidential Information Confidential Information
Global Operations and Support Regional sales supported with global and regional distributors 200mm 300mm CMOS CMOS JAPAN NORTH APAC EMEA AMERICA MRAM MRAM PACKAGING Sales Representative/Ops SOUTH AMERICA Austin Design Center Fab Partner Sites TEST Top Customer Announcements Everspin Headquarters Chandler, Arizona, USA 1st Gen production 200mm line in Chandler, AZ 2nd and 3 rd Gen proprietary MRAM process successfully Global Distributors Regional Distributors transferred to GLOBALFOUNDRIES 300mm advanced CMOS with integrated MRAM manufacturing Embedded MRAM 7 7 Confidential Information
MRAM: Breakthrough Application-Specific Memory Technology Toggle MRAM Advantages Non-volatile Magnetic field-switched has Fast write-speeds robust performance in harsh environments Superior write-cycle endurance Spin-Torque MRAM (ST-MRAM) Scalable to greater densities and smaller process geometries Manufacturable at high volumes Low energy requirements In-Plane Spin-Torque Perpendicular Spin-Torque Spin-Torque MRAM is capable of scaling to Gb densities 8 8 Confidential Information Confidential Information
MRAM Technology Breakthroughs from Everspin Everspin Everspin Incumbent Memory Primary Status Product Technology Technology Densities Applications Field Switched Industrial / Automotive & SRAM 128kb – 16Mb Shipping (FS) Transportation 1 st Generation Micro-Controller (Toggle) Customer Embedded eSRAM Embedded SRAM plus Shipping Defined Flash Replacement In-Plane 2 nd Generation Shipping 64Mb; Spin Torque DRAM 64Mb – 256Mb Enterprise Storage (ST-MRAM) Sampling 256Mb (iST) Perpendicular Sampling 256Mb; 3 rd Generation Enterprise Storage & Spin Torque DRAM 64Mb – 1Gb+ 1Gb+ in (ST-MRAM) Servers (pST) Development 9 Confidential Information
Why MRAM Now? Customer system requirements increasingly seeking application-specific, high-performance, 1 persistent memory (existing memory solutions increasingly inadequate) Volume CMOS and MRAM production lines in place for both 200mm and 300mm products 2 Release of higher density products opens up new applications and larger opportunities 3 Established customer base and ecosystem, including relationships with leading controller companies 4 Significant design win pipeline 5 Everspin has the sales channel, go-to-market strategy, design win pipeline, top tier customers, product breadth, system knowledge and the ecosystem to succeed 10 Confidential Information
Established Ecosystem Enables Rapid Customer Design-in Cycles, Reducing Time to Revenue Everspin has partnered with Storage Controller IP providers to ensure compatibility to our DDRx ST-MRAM ASIC/ SoC/ASSP FPGA SSD Controller RAID Controller Customers have access to validated IP to use in their designs 11 Confidential Information
ST-MRAM Improves Performance and Simplifies Implementation 1-2* 5-9* 5-9* 9-36* MRAMs MRAMs MRAMs MRAMs >15M 2.5” >1M PCIe >5M RAID >1M SSDs Cards SSDs NVDIMMs Yearly Yearly Yearly Yearly Smallest Form Factors May Not Be Viable Without ST-MRAM 12 Confidential Information * Represents number of MRAMs per system; MRAM content and unit shipments are Everspin estimates
MRAM – The First True Storage Class Memory Performance ST-MRAM Spin Torque (MRAM) Parameter Advantage CB-RAM, ReRAM, 100-1,000x RRAM 3D XPoint & PCM Write Speed and PCM types NAND (tPROG) Endurance 10,000,000X NAND HDD (Seek & RL) 10,000,000 1,000 10 100,000 Persistence Non-Volatile Minimum Time to Write (nanoseconds) Persistence of Storage Endurance and Speed of a Memory Channel 13 Confidential Information
Everspin Module Products Overview nvDIMM ST-MRAM based Non-Volatile Accelerators PCIe HHHL AD PCIe HHHL U.2 M.2 Main product line is NVMe Accelerators in HHHL, U.2 & M.2 form factors nvDIMMs Open and standardized HW and SW interfaces (plug & play) (Dual In-line Memory Module) Virtually all enterprise class storage appliances support these standards Inherently Non-Volatile NVMe has become dominate forward looking SSD interface with ST-MRAM Software interface (NVMe) is supported by most high volume OSes (Linux, Alternative to Windows, VMWare, FreeBSD, OpenBSD, OSx, Solaris & Chrome) DRAM+Flash, SuperCap Drivers for OS already in place backed NVDIMM 14 Confidential Information
Everspin Module Products Value Proposition 10x 1.5M IOPS (Random R/W) No External Batteries NVMe (block storage) and/or Zero Data Flush Time 6uS Latency (End-End) Zero Data Recovery Time No External Capacitors Persistent Memory Ultra-Fast Persistent Data Inherently Power Fail Safe Flexible Modes No Cycle Time Impact (DRAM like performance) (Zero system dependencies) (Adapt to application needs) (Superior application recovery) 100% 10,0000000x No Capacitor Banks Needed No Thermal Impact Just Keeps Going U.2, M.2, HH/HL PCIe No Performance Penalty No Battery Packs Needed Full Performance Unlimited Endurance Ubiquitous Interface Enable Dense Form-Factors (In standard thermal profile) (For any or extreme workloads) (Use in any type of system) (Blade & Modular Servers) 15 Confidential Information
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