Edge Characterization of 3D Silicon Sensors after Bump-Bonding with - - PowerPoint PPT Presentation

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Edge Characterization of 3D Silicon Sensors after Bump-Bonding with - - PowerPoint PPT Presentation

Oct 24, 2023 28 likes •243 views

3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion Edge Characterization of 3D Silicon Sensors after Bump-Bonding with the ATLAS Pixel

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Edge Characterization of 3D Silicon Sensors after Bump-Bonding with the ATLAS Pixel Readout Chip

Ole Myren Røhne1 on behalf of the ATLAS 3D Pixel Collaboration

1University of Oslo

IEEE 2008 Nuclear Science Symposium

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Outline

3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

ATLAS 3D Pixel R&D Collaboration

“Development, Testing and Industrialization of Full-3D Active-Edge and Modified-3D Silicon Radiation Pixel Sensors with Extreme Radiation Hardness for the ATLAS experiment” Participating institutions: 13 Bonn University, Freiburg University, University of Genova, Glasgow University, the University of Hawaii, Lawrence Berkeley National Laboratory, Manchester University, the University of New Mexico, University of Oslo, the Czech Technical University, University of Bergen, SLAC and CERN Industrial partners: 4 CNM/Valencia Spain, ICEMos Northern Ireland, IRST/FBK Italy and SINTEF Norway Topics and goals The primary goal is the development, fabrication, characterization, and testing, with and without the front-end readout chip, of Full-3D — active-edge and Mod-3D silicon pixel sensors of extreme radiation hardness and high speed for the Super-LHC ATLAS upgrade and, possibly, the ATLAS B-layer replacement. A secondary goal is to start design work for a reduced material B-layer detector module using these sensors.

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3D ATLAS Pixel compatible sensor

Design and fabrication

  • J. Hasi, Manchester
  • C. Kenney, MBC at CIS-Stanford

Substrate Thickness 210 µm P-type substrate 12 kΩcm Financial support STFC, UK (FP420 project) DOE, USA (ATLAS upgrade) Baby-2E Baby-3E 10 wafers completed, yield ≃80% (1 wafer)

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

3D sensors: technology and principles

Technology

  • MEMS + VLSI applied to sensor design:

Deep Reactive Ion Etching (DRIE)

  • Aspect ratio AR = D/d in excess of 20
  • Electrodes: etched, doped, filled columns

(S. Parker 1995)

  • Edges: etched, doped trench

(C. Kenney 1997)

  • Benefits: Radiation hardness and active

edges Principles

  • Horizontal drift field, decoupling
  • Sensor thickness (total charge)
  • Inter-electrode distance (signal

efficiency)

  • Etched and doped edge terminates the field
  • No guard rings
  • Fully efficient up to the edge
  • Precision etch replaces dicing
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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

3D Sensors: precision etched active edge

Novel module layout: Tiled array with minimum dead area

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Test beam set-up

Devices-under-Test (DUT): 3E and 4E 3D Pixel sensors from Stanford and Manchester, bonded to the ATLAS Pixel FE-I3 read-out chip Beam

  • CERN SPS North-area H6 test beam
  • Minimum ionizing particles (MIP): 180 GeV/c π±
  • Beam period: June 2008

Trigger and timing

  • Overlap coincidence
  • Veto counter for shower suppression
  • Trigger phase measurement (TDC)

Bonn ATLAS Telescope (BAT)

  • Developed for ATLAS Pixel test beams
  • Two-sided Si micro-strip
  • Strip pitch: 50 µm, analog read-out
  • Point resolution: 5 µm (estimated)
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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3E (−40 V): Single hit residual

  • Charge sharing is suppressed, most tracks fire a single 50 µm × 400 µm pixel
  • Convolution of 3 contributions: pixel response, tracking resolution, residual misalignment
  • Fitted edge resolution: 11 µm
  • Expect ≃8 µm from tracking alone
  • 400
  • 300 -200
  • 100

100 200 300 400 500 1000 1500 2000 2500

  • 400
  • 300 -200
  • 100

100 200 300 400 2000 4000 6000 8000 10000 12000 14000 16000 18000

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3E (−40 V): Interior cell response

Layout detail

0.5 1 200 400 600 800 50 100

Efficiency map

200 400 600 800 0.5 1

ǫ = 92% (prelim)

20 40 60 80 100 120 140 160 180 200 5000 10000 15000 20000 25000 30000 Charge distribution - suppressed read-out electrode Entries 434895 Mean 55.73 RMS 23.87 Charge distribution - suppressed read-out electrode 20 40 60 80 100 120 140 160 180 200 200 400 600 800 1000 1200 1400 Charge distribution - close to read-out electrode Entries 26021 Mean 49.24 RMS 27.07 Charge distribution - close to read-out electrode

Column area signal: 27.2%

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 4E (−40 V): Interior cell response

Layout detail

0.5 1 200 400 600 800 50 100

Efficiency map

200 400 600 800 0.5 1

ǫ = 90% (prelim)

20 40 60 80 100 120 140 160 180 200 5000 10000 15000 20000 25000 Charge distribution - suppressed read-out electrode Entries 341478 Mean 50.77 RMS 22.67 Charge distribution - suppressed read-out electrode 20 40 60 80 100 120 140 160 180 200 200 400 600 800 1000 1200 1400 Charge distribution - close to read-out electrode Entries 27438 Mean 42.85 RMS 26.53 Charge distribution - close to read-out electrode

Column area signal: 26.7%

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3E (−40 V): Charge sharing

Layout detail

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 200 400 600 800 50 100

Split clusters

200 400 600 800 0.5 1

q = 14% (prelim)

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 4E (−40 V): Charge sharing

Layout detail

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 200 400 600 800 50 100

Split clusters

200 400 600 800 0.5 1

q = 11% (prelim)

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3E (−40 V): Edge response

Layout detail

0.5 1 200 400 600 800 50 100

Efficiency map

200 400 600 800 0.5 1

Fitted edge µ = 68.1µm σ = 12.0µm

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 200 400 600 800 50 100

Split clusters

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 4E (−40 V): Edge response

Layout detail

0.5 1 200 400 600 800 50 100

Efficiency map

200 400 600 800 0.5 1

Fitted edge µ = 82.5µm σ = 10.5µm

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 200 400 600 800 50 100

Split clusters

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 4E: Capacitance concerns

Measurements (C. DaVia, IEEE NSS 2007) indicate the capacitance plateau reached only well above the theoretical full depletion voltage. The resulting timewalk/overdrive is higher than for planar devices (Q20ns = 1244e). Mitigation of efficiency loss expected from less charge sharing in 3D sensors.

ToT 10 20 30 40 50 60 70 80 90 100 ns 100 120 140 160 180 200 220 240 260 280 300

−50 V Noise (lab) ENC = 290e Overdrive (lab) Q20ns = 3340e Overdrive (beam) Q20ns = 3920e(prelim)

ToT 10 20 30 40 50 60 70 80 90 100 ns 100 120 140 160 180 200 220 240 260 280 300

−15 V Noise (lab) ENC = 340e Overdrive (lab) − Overdrive (beam) Q20ns = 5040e(prelim)

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Irradiation test

The test sample and irradiation procedure

  • Stanford 3E-device bonded to ATLAS Pixel FE-I3 front-end
  • Irradiated in PS with 24 GeV protons, under bias -40V
  • Total fluence: 9.8·1014p/cm2
  • Equivalent to 5·1014n/cm2 (1 MeV)
  • Partially annealed during testing and handling

Characterization after irradiation

  • Bond wires destroyed by corrosion
  • Several repair attempts
  • Low-voltage break-down which limits the bias voltage below −5 V
  • Occurred during testing/handling
  • Similar failures on non-irradiated devices
  • Inefficient cooling, running at around 0 degC
  • Still miraculously showing some efficiency to tracks
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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3E (−5 V): Irradiated detector

Layout detail

0.5 1 200 400 600 800 50 100

Efficiency map

200 400 600 800 0.5 1

ǫ = 90% (prelim)

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Stanford 3E (−10 V): reference

Layout detail

0.5 1 200 400 600 800 50 100

Efficiency map

200 400 600 800 0.5 1

ǫ = 92% (prelim)

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Conclusions

  • 3D detectors bump-bonded to the ATLAS FE-I3 have been successfully tested in a

180 GeV/c π± beam in June 2008.

  • The edge response of 4E and 3E electrode configurations has been measured to be

σ = 11 µm - probably dominated by contributions from tracking resolution and residual misalignment.

  • A 3E assembly was irradiated to 9.8·1014p/cm2. With less than 5 V bias at T = 0 degC

the region in the center of the cell still retains half track efficiency.

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Outlook

  • Three industrial partners completed their

first batch of ATLAS FE-I3 compatible sensors (IEEE/NSS 2008 N34-4)

  • Scheduled for testing in the SPS beam

next week - cancelled!

  • First assembly with SINTEF sensors

already detects gammas from Am241

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3D Si Pixels for the LHC upgrade Test beam set-up Interior pixel response Charge sharing Active edge Capacitance concerns Irradiation test Conclusion

Thanks

These measurements would not have been possible without the dedicated work of the following groups and individuals: CERN SPS and North Area Team CERN PH Dept Silicon Facility Ian McGill ATLAS Test beame coordinator Beniamino Di Girolamo Bump-bonding and mounting Bonn University with IZM Test beam set-up and operation E. Bolle, B. Buttler, C. Da Via, O. Dorholt, S. Fazio,

  • H. Gjersdal, J. Hasi, A. La Rosa, C. Kenney, D. Miller,
  • C. Young, V. Linhart, H. Pernegger, T. Slavicec, K. Sjobak,
  • M. Tomasek, S. Watts