3D ACTIVE EDGE SILICON 3D ACTIVE EDGE SILICON SENSORS SENSORS - - PowerPoint PPT Presentation

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

OUTLINE OUTLINE

• C. Kenney (MBC), L. Reuen, R. Kohrs, M. Mathes, J Velthuis, N. Wermes (Bonn Univ.) J. Hasi, A.

Kok, S. Watts (Brunel U.K.) S. Parker (U. of Hawaii) G. Anelli, M. Deile, P. Jarron, J. Kaplon, J. Lozano and the TOTEM Collaboration (CERN), V. Bassetti (Genova), M. Garcia-Scievert, K. Einsweiler (LBL), V. Linhart, T. Slavicheck, T Horadzof, S. Pospisil (Technical University, Praha), M. Ruspa (Torino).

Cinzia Da Via Cinzia Da Via’ ’, Brunel University UK , Brunel University UK

3D ACTIVE EDGE SILICON 3D ACTIVE EDGE SILICON SENSORS SENSORS

Pixel sensor requirements for replacement and upgrade Present results Test beam 2006 + Rad. Hardness Conclusions and Future plans

Collaboration

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Before choosing a Before choosing a ‘ ‘new new’ ’ pixel sensor pixel sensor technology we need to know: technology we need to know:

Efficiency - Functionality Yield + Large Area + Cost + Large scale production Reduced dead edge Material Budget – Forward physics- Medical Imaging Radiation hardness up to 1016 n/cm2 Noise - Capacitance Speed Reduced bunch crossing, pileups, rate

If FZ-silicon is the chosen material then one has to consider alternative sensors geometries: 3D is one of them.

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

3D silicon sensors 3D silicon sensors fabricated

fabricated at Stanford by J. at Stanford by J. Hasi Hasi (Brunel) and C. Kenney (MBC) (Brunel) and C. Kenney (MBC)

1. NIMA 395 (1997) 328 2. IEEE Trans Nucl Sci 464 (1999) 1224 3. IEEE Trans Nucl Sci 482 (2001) 189 4. IEEE Trans Nucl Sci 485 (2001) 1629 5. IEEE Trans Nucl Sci 48 6 (2001) 2405 6. CERN Courier, Vol 43, Jan 2003, pp 23-26 7. NIM A 509 (2003) 86-91 8. MIMA 524 (2004) 236-244

3D silicon detectors were proposed in 1995 by S. Parker, and active edges in 1997 by C. Kenney. Combine traditional VLSI processing and MEMS (Micro Electro Mechanical Systems) technology. Both electrode types are processed inside the detector bulk instead of being implanted on the Wafer's surface. The edge is an electrode! Dead volume at the Edge < 5 microns! trench electrode

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

290 μm

WAFER BONDING (mechanical stability) Si-OH + HO-Si -> Si-O-Si + H2O DEEP REACTIVE ION ETCHING (STS) (electrodes definition) Bosh process SiF4 (gas) +C4F8 (teflon) Step 1-3 field implant, oxidize and fusion bond wafer Step 4-6 pattern and etch p+ window contacts Step 7-8 etch p+ electrodes Step 9-13 dope and fill n+ electrodes Step 14-17 etch n+ window contacts and electrodes Step 18-23 dope and fill p+ electrodes Step 24-25 deposit and pattern Aluminum D d Aspect ratio: D:d = 11:1 LOW PRESSURE CHEMICAL VAPOR DEPOSITION (Electrodes filling with conformal doped polysilicon SiH4 at ~620C) 2P2O5 +5 Si-> 4P + 5 SiO2 2B2O3 +3Si -> 4 B +3 SiO2

p n

METAL DEPOSITION Shorting electrodes of the same type with Al for strip electronics readout

• r deposit metal for bump-bonding

Both electrodes appear on both surfaces

Key processing steps (25 Key processing steps (25-

• 32)

32)

1- etching the 2-filling them electrode with dopants

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Yield + Large area : FP420/Atlas pixel Yield + Large area : FP420/Atlas pixel

(bump (bump-

• bonding IZM organised by the Bonn Group)

bonding IZM organised by the Bonn Group)

• 32 3E ATLAS Single Chips
• 6 4E ATLAS Single Chips
• 6 2E ATLAS Single Chips
• Quarter Size ATLAS Chips
• ATLAS Test Structures
• Other structures

Thickness <250 μm> p-type substrate 12kΩcm

10 wafers completed : Yield on one wafer ~80% 10 wafers completed : Yield on one wafer ~80%

DIMENSIONS RO SIGNAL Technology BUFFER/speed 50x400 μm2 7.2x8mm2 binary and time

• ver threshold

0.25 μm IBM CMOS6SF 2 - 6.4μs 40 MHz

Atlas chip picture from Bekerle Vertex03

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

3D FP420/Atlaspix electrode configurations 3D FP420/Atlaspix electrode configurations

2E 3E 4E

400 μm 50 μm 400 μm 50 μm 400 μm 50 μm

p n

56 μm

Vfd ~5V p n

103μm

Vfd ~20V p n

71 μm

Vfd ~8V

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

b e a m

3D x y x y

scint. scint.

• Aug. 17 Sept. 3, 2006
• Aug. 17 Sept. 3, 2006

H8 H8 Cern Cern beam line beam line

100 GeV π- Triggers: 3x3 mm2 , 12x12 mm2

Telescope, daq and on-line monitor by Lars Reuen, Atlas pixel setup and data conversion Markus Mathes (Bonn group)

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

hitmap with the 12x12 mm2 trigger hitmap with the 3x3 mm2 trigger

3D 3D-

• 2E

2E-

• A preliminary

A preliminary

Longer pixels

0o

beam

Vbias=30V Threshold=4000e-

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

3E 3E-

• G correlation plots and hit maps

G correlation plots and hit maps

Tot 3D Telescope x-x y-y Vbias =15V

• Th. = 4000e-

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

0o 10o 30o 45o

4E electrode angular response 4E electrode angular response – – preliminary preliminary

beam

1 pixel cross section 50 x 250

Vbias= 20V Th. = 4000e-

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

0o 10o 30o 45o

4E 4E-

• Signal size versus cluster size

Signal size versus cluster size

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

90 Degree data 90 Degree data – – run 1228 run 1228

Several events on one plot beam

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

3D edge sensitivity using 3D edge sensitivity using 13 13 keV keV X X-

• rays at ALS

rays at ALS-

• Berkeley

Berkeley

Electrodes ~ Electrodes ~ 1.8% 1.8% of to

• f tota

tal area l area

Measurement Performed using a 2 μm beam

• J. Hasi, C. Kenney,
• J. Morse, S. Parker

s c a n

X-ray

10-90% < 5μm X-ray micro-beam scan, in 2 µm steps, of a 3D, n bulk and edges, 181 µm thick sensor. The left electrodes are p-type Efficiency measured in test beam ~98%

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Efficiency: p and n electrodes response Efficiency: p and n electrodes response

Electrodes area ~1.8% of total area Electrodes area ~1.8% of total area

40% reduction in count efficiency at p 40% reduction in count efficiency at p-

• electrode

electrode Cell study using 120GeV muons (Cern X5), Telescope Precision ~4μm. Electrode response using 12KeV X-ray beam (ALS), beam size ~ 2μm

n n n n

p n

50μm 100μ m

• A. Kok PhD thesis
• J. Hasi, PhD thesis

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Efficiency Efficiency (TOTEM X5

(TOTEM X5-

• beam area)

beam area)

3.195 x 3.9 mm2 3D SENSOR Thickness=180 μm n-type Si 4kΩ-cm SCTA READOUT CHIP*

Telescope track position at 3D Telescope track position at 3D if 3D has a hit if 3D has a hit

*IEEE Trans.Nucl.Sci.44:298-302,1997

• TOTEM TDR-CERN

3D PLANES

REFERENCE TELESCOPE

S:N=14:1

Efficiency= 98%

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

3D edge sensitivity with high energy 3D edge sensitivity with high energy muons muons

0.2 0.4 0.6 0.8 1

• 2
• 1

1 2 3 4 5

y [mm] System Efficiency

0.2 0.4 0.6 0.8 1

• 0.5
• 0.25

0.25 0.5

System Efficiency

0.2 0.4 0.6 0.8 1 2.5 2.75 3 3.25 3.5

y [mm]

Atlas SCTA readout Fit width = (3.203 ± 0.004) mm

• Phys. width = (3.195 ± 0.001) mm

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

n

π

• ther

charged hadrons

total

Radiation Environment at the LHC and Radiation Environment at the LHC and Expected at the Expected at the SLHC SLHC

1.8 x1016 >85%

Ch hadrons

Data from CERN-TH/2002-078

Multiple particle environment: NIEL scaling 1 MeV n equivalent Violation observed for oxygen rich materials

~5x1015

B-LAYER ~4cm

ATLAS

~5x1014

Displacement Damage in Silcon for Different Particles

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E-10 1.0E-08 1.0E-06 1.0E-04 1.0E-02 1.0E+00 1.0E+02 1.0E+04

particle energy [MeV] D /(9 5 M e V m b )

protons neutrons electrons pions

1MeV

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

STANDARD 300μm n-type SILICON EFFECTIVE DRIFT LENGTH Due to charge trapping ~150μm e- ~50μm h SPACE CHARGE

• ve Neff (1013/cm3) ~ VFD (5000V)~ Φ

TYPE INVERSION depletion from n-contact (e-field) REVERSE ANNEALING INCREASE OF -ve Neff temp. dep LEAKAGE CURRENT prop to Φ (I/V ~5x10-17 Φ)

MACROSCOPIC PARAMETERS CHANGES OBSERVED AT MACROSCOPIC PARAMETERS CHANGES OBSERVED AT 3x10 3x1015

15 n/cm

n/cm2

2 10 years of operation at L=10

10 years of operation at L=1034

34 cm

cm-

• 2

2s

s-

• 1

1 at R=4 cm

at R=4 cm

Signal formation Charge sharing Speed Double junction Charge diffusion Noise Thermal runaway

Time [y]

Maintenance

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Ec Ev Ei

V2(-/0)+Vn Ec-0.40eV V2(=/-)+Vn Ec-0.22eV VO- Ec - 0.17eV V6 CIOI

(0/+)

EV+0.36eV V2O DLTS spectrum

From RD48/rose

Radiation Induced Defects in Silicon Radiation Induced Defects in Silicon

Neutron irradiated

V,I MIGRATE UNTIL THEY MEET IMPURITIES AND DOPANTS TO FORM STABLE DEFECTS

CHARGED DEFECTS ==>NEFF, VBIAS DEEP TRAPS, RECOMBINATION CENTERS ==>CHARGE LOSS GENERATION CENTERS==>LEAKAGE CURRENT

VO VO effective e and h trap V V2

2 and V

V2

2O

O deep acceptors contribute to Neff

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Neutron Proton Puzzle Neutron Proton Puzzle

COMPETING MECHANISM DUE TO COULOMB INTERACTION MORE POINT DEFECTS WHEN CHARGED PARTICLE IRRADIATION

V2+0 = V2O

CONTRIBUTES TO NEFF

V+O = VO

DOES NOT CONTRINUTE TO NEFF

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Carriers Collection Distance Determined by Carriers Collection Distance Determined by Effective drift length Effective drift length

500 1000 1500 2000 2500 50 100 150 200 250 300 350

FOR FLUENCE = 10

14 cm

• 2

E = 10

4 V cm

• 1

Effective Trapping Length ( microns) Temperature (K)

Neutron Neutron Proton Proton

Electrons Holes

Leff

eff =

= τt x V x Vdrift

drift

Data for neutron and protons of effective rapping time at 220K-300K from Kramberger et al

• S. W

at t s, C. Da Vi a M I M A 501 ( 2003) 138- 145

10 15 20 25 30

2 10

6

4 10

6

6 10

6

8 10

6

1 10

7

1.2 10

7

50 100 150 200 250 300 350

teffn teffnh Vde Vdh Effective Trapping Time (ns) Drift Velocity (cm s-1)

Tem perature (K) E = 10

4 V cm

• 1 ( 1V/m

icron)

10

14 n cm

• 2

Measured values Leff

eff at 10

at 1016

16 proton/cm

proton/cm2 ~ 20 ~ 20μm electrons electrons ~10 ~10 μm h m hole les

Different between neutron and proton irradiation!

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

50 100 150 200 1 2 3 4 Fluence = 10

15 protons cm

• 2

Effective Drift Length (microns) Electric Field ( Volt/micron ) Electrons Holes T = -20

• C

Trapping times from Kramberger et al. NIMA 481 (2002) 100 Simulations CDV and S.Watts NIM A 501(2003) 138 (Vertex 2001)

Short collection distance (50-70 μm) High average e-field per applied Vbias Parallel charge collection Always use full substrate thickness (MIP ~80 e-/μm)

Why is 3D radiation hard Why is 3D radiation hard

3D planar

S = q (Vc-Vx) e –x/Leff

Ottaviani, Canali et al.

h+ e- x c x c

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Volume = 1.2 x 1.33 x 0.23 mm3 Inter-electrode spacing = 71 μm 3 electrode Atlas pixel geometry n-electrode readout n-type before irradiation -12 kΩ cm Irradiated with reactor neutrons (Praha)

Name Fluence [n1MeV/cm2] Fluence [p/cm2] 7F 3.74e15 6.0e15 7A 5.98e15 9.6e15 7D 8.60e15 1.4e16

Radiation hardness tests of 3D Radiation hardness tests of 3D-

• 3E

3E Atlas geometry

Atlas geometry

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

2 10-5 4 10-5 6 10-5 8 10-5 0.0001 2 1015 4 1015 6 10 15 8 1015 1 10 16

y = -2.0234e-6 + 1.329e-20x R= 0.99243

Current at 20C full depletion [A] Fluence [n/cm 2]

α = 6 x 10-17 A/cm

Radiation hardness: macroscopic parameters Radiation hardness: macroscopic parameters and signal efficiencies and signal efficiencies

20 40 60 80 100 120 140 160 2 10 15 4 10

15

6 10

15

8 10

15

1 10

16

Voltage Full Depletion [V] Fuence [n/cm 2]

n-type starting material expected type inversion point

• 0.01
• 0.008
• 0.006
• 0.004
• 0.002

0.002

• 3 10 -8 -2 10 -8 -1 10 -8

1 10 -8 2 10 -8 3 10 -8 Amplitude [V] Tim e [s] 8.6 e 15 n/cm 2 5.98e 15 n/cm 2 3.7e 15 n/cm 2

N O N IR R A D IA TED

C . D aVia et al M arch 06

Average of ~1000 pulses IR Laser 1060nm T=-10C bias

• 0 .0 0 6
• 0 .0 0 5
• 0 .0 0 4
• 0 .0 0 3
• 0 .0 0 2
• 0 .0 0 1

• 3 1 0
• 7
• 2 1 0
• 7
• 1 1 0
• 7

• 7

• 7

• 7

Gain = ~1000 Oscilloscope

20 oC no ben. ann.

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

eff drift trap t

1 1 S L v x N τ φ ∝ = ∝ ∝

20 40 60 80 100 120 5 1015 1 1016 1.5 1016 2 1016 Signal efficiency [%] Fluence [p/cm2]

y = 100/(1.0+1.0*m1*M0) Error Value 5.7588e-18 8.4122e-17 m1 NA 24.886 Chisq NA 0.99396 R

Signal efficiency Signal efficiency

Simulation by S. Watts to be published 2 4 6 8 10 12 50 100 150 200 Amplitude [mV] Bias Voltage [V]

3.74 x 1015 n/cm2 5.98 x 1015 n/cm2 8.6 x 1015 n/cm2

IR 1060nm defocused laser spot

NI

• C. Da Via' et.al. March 06

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

20 40 60 80 100 5 10

15

1 10

16

1.5 10

16

2 10

16

Signal efficiency [%] Fluence [n/cm

2]

8 1015 1.6 1016 2.4 1016 3.2 1016 Fluence [p/cm

2]

3D silicon C. DaVia et a. March 06 Diamond W. Adam et al. NIMA 565 (2006) 278-283 n-on-p strips P. Allport et al. IEEE TNS 52 (2005) 1903 n-on-n pixels CMS T. Rohe et al. NIMA 552(2005)232-238

• C. Da Via'/ Aug.06

3x1015 p/cm2 = 10 years LHC at 1034 cm-2s-1 At r=4cm 1.8 x 1016p/cm2 = 10 years SLHC at 1035cm-2s-1 At r=4cm

Radiation Hardness Radiation Hardness

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Detector Type

Thickness [μm] V-bias [V] e-h/μm [Most Probable] e- h/0.1%X [mean]

160 2.2 V/μm 500 1V/μm 600V 2.1 V/μm 80 900 3.2 V/μm 27 104 4500 104 80 104 80

Signal after 10 years LHC (SLHC) at 4cm [%]

235 77 (35) 73 (35) 48 (11) 54 (14) 500 285 280

MIP Charge

• Bef. irr. [e-]

Signal after 10 years LHC (SLHC) at 4 cm [e-] T [C]

3D- silicon 18800 13500 22800 22400 Diamond “

• 10

14480 (6580) 20 Pixels CMS “ n-on-n 9855 (4725) 10940 (2510) 12100 (3136)

• 10

Strips ATLAS “ n-on-p

• 10

Detector Parameters Detector Parameters

C DaVia/March06

*Same reference than previous slide

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

5000 1 104 1.5 10

4

2 10

4

2.5 10

4

5 10

15

1 10

16

1.5 10

16

2 10

16

Signal charge [e-] Fluence [n/cm2] 8 1015 1.6 1016 2.4 1016 3.2 1016 Fluence [p/cm

2]

3D silicon C. DaVia et a. March 06 Diamond W. Adam et al. NIMA 565 (2006) 278-283 n-on-p strips P. Allport et al. IEEE TNS 52 (2005) 1903 n-on-n pixels CMS T. Rohe et al. NIMA 552(2005)232-238

• C. Da Via'/ Aug.06

3x1015 p/cm2 = 10 years LHC at 1034 cm-2s-1 At r=4cm 1.8 x 1016p/cm2 = 10 years SLHC at 1035cm-2s-1 At r=4cm

Radiation Hardness Radiation Hardness

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

Speed Speed

Short collection distance High average e-field at low Vbias Parallel charge collection

rt 1ns ≈

3D only simulation

Circuit Hspice Simulation

90Sr pulse + FIT

3.5 ns rise time (dominated by electronics 0.25 μm G. Anelli et al) 2 5

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

3D Tests in progress with a 0.13 3D Tests in progress with a 0.13 μ μm CMOS m CMOS Amplifier chip Amplifier chip (designed by

(designed by Depeisse Depeisse-

• Anelli

Anelli-

• CERN

CERN MIC) MIC)

3D Inter-electrode distance = 50 μm 5ns T=300K

rt 1.5ns ≈

• scilloscope trace

Cinzia Da Via’- Vertex 06 - Perugia - September 2006

The results so far on :

• Speed,
• edge response,
• efficiency,
• rad. hardness and
• large area fabrication
• f 3D sensors fabricated at Stanford very encouraging for applications beyond the LHC.

LARGE AREA PRODUCTION IN COLLABORATION WITH SINTEF - NORWAY Will need to improve/study/explore

• electrode response
• electrode aspect ratio
• yield
• alternative substrate’s materials
• atlas pixel parameters optimization

Interest to use 3D sensors expressed by FP420 (CERN R&D for forward physics at Atlas and/or CMS), Atlas b-layer replacement and upgrade To be used in Totem (planar/3D).

Conclusions and future plans Conclusions and future plans