Dirac materials and narrow- gap semiconductors for keV-MeV - PowerPoint PPT Presentation

Dirac materials and narrow- gap semiconductors for 
 keV-MeV freeze-in DM Yoni Kahn, KICP/UIUC In collaboration with: 
 UIUC: P. Abbamonte, J. Eckstein, J. Filippini, F. Mahmood, 
 D. Van Harlingen, L. Wagner, J. Zuo Brookhaven: Q. Li, G. Gu Fermilab: A. Para, P. Rubinov

Concept: DM-electron scattering at low gap energies • We are going after DM-electron scattering (c.f. Tongyan’s talk on Wed.) at the freeze-in target (c.f. all the Tues. afternoon theory talks) in the mass range 
 20 keV — 1 MeV wide open 
 • Need materials with ~30 meV excitation parameter space! energy for the lowest-mass DM • We will use charge amplification rather than phonon detection - energy threshold is set by material rather than detector 12:00h N Dark Matter Wind • One of our proposed materials (ZrTe 5 ) is highly anisotropic , leading to strong daily and annual modulations which 0:00h can help mitigate isotropic backgrounds

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 k 1 − 300 µ m sample 1 (a) (b +10-100 V 0.5 or 0 E-E F (eV) 0 V -0.5 b) p-type -1 1 − 10 µ m -1.5 depletion Y Γ Z T S R ZrTe 5 band diagram n-type +10-100 V Operates like an APD or a SiPM (c.f. Claudio’s talk on Tues.): 
 e-h pair created in insulating layer is accelerated, impact ionization leads to 
 charge cascade : mA for exponential gain, 10-100 e for linear gain