CORIAL 360IL 300 mm ICP-RIE equipment for high performances and low - - PowerPoint PPT Presentation
9/5/2018 CORIAL 360IL 300 mm ICP-RIE equipment for high performances and low CoO Wide process range for Industry-leading Large batch capacity with Silicon, Metals, III-V and uniformity and 23x2, 7x4 or 3x6 wafer II-VI
CORIAL 360IL
9/5/2018 Corial 360IL
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300 mm ICP-RIE equipment for high performances and low CoO
Wide process range for Silicon, Metals, III-V and II-VI compounds Industry-leading uniformity and repeatability Large batch capacity with 23x2”, 7x4’’ or 3x6’’ wafer handling
SYSTEM DESCRIPTION
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960 750 357 1760 600 460 550 390 500 190 200
General View
COMPACT FOOTPRINT
SYSTEM DESCRIPTION
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Detailed View
Pumping system
(TMP 1600l/s and dry pump 110 m3/h)
Chiller / Heater Load lock ICP reactor HV and LV power supplies Process controller 2000 W ICP generator 2000 W RF generator
SYSTEM DESCRIPTION
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Loading
FAST AND REPEATABLE LOAD AND UNLOAD
LOADING TIME
EASY EXCHANGE BETWEEN SUBSTRATE SHAPE AND SIZE
ICP SOURCE
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1. Load lock to run fluorinated and chlorinated chemistries in the same process recipe 2. Load lock for stable and repeatable process conditions 3. RF match box with matching range up to 2000 W 4. Optimized gas injection with top gas inlets, allowing fast etch rates and excellent uniformities 5. Uniform temperature control (from -50°C) for best repeatability 6. Hot walls (>250°C) minimize polymer condensation for selective processes 7. Shuttle holding to minimize process cross-contamination
FAST AND UNIFORM ETCHING
GaAs 500 nm/min Sapphire 75 nm/min GaN 200 nm/min …
ICP SOURCE
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Operation Sequence
PLASMA
Aluminum enclosure
Window
2 KW RF Generator at 2 MHz
Match Box
Helium Cathode
Coolant IN Coolant OUT
Quartz Shuttle for 7 x 4’’ or 3 x 6 Gas shower
Plasma heats the wafers Heat is transferred to shuttle and to the cooled cathode by He pressure at 5 Torr
SHUTTLE HOLDING APPROACH
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Portfolio
Quartz shuttle Wafers Aluminum table with o-rings Shuttle Metal fingers wafers Aluminum table with o-rings
CARRIER LIFETIME
EDGE EFFECT
SHUTTLE HOLDING APPROACH
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Benefits
VERY CLEAN AND SHARP FINGER PRINT NO DISCOLOR AT WAFER EDGE
At 1 mm from finger At 2 mm from finger At 3 mm from finger
At finger Place From Wafer Edge
At 1 mm from Top At 2 mm from Top At 3 mm from Top
PSS APPLICATION
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Features Specifications Profile angle 50 – 60° Midpoint d = 100 ± 20 nm PSS Height Gap < 50 nm gap PSS Width Gap < 70 nm gap Throughput (Wafers / h) 2.5 Throughput (Wafers / month) > 1700
CUSTOMERS’ SPECIFICATIONS FOR 6’’ PSS ETCHING
PSS APPLICATION
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SEM Results
CORIAL Conical PSS SHAPE
PSS HEIGHT UNIFORMITY
1.78 ± 0.045 µm
PSS WIDTH UNIFORMITY
2.79 ± 0.045 µm
Centre
W1 W2 W4
Top Flat
PSS APPLICATION
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SEM Results
CORIAL Triangle PSS SHAPE
Top 5 mm Centre Flat 5 mm
PSS HEIGHT UNIFORMITY
1.665 ± 0.035 µm
PSS WIDTH UNIFORMITY
2.758 ± 0.035 µm
PSS APPLICATION
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Unimap Results
No RF Avg RF Std 1 3.506 0.329 6 3.365 0.257 7 3.571 0.322
AVERAGE WAFER STD
STD OF BATCH REFLECTIVITY
CORIAL RUN TO RUN REPEATABILITY
PSS APPLICATION
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CORIAL’s Advantage
OVER
UPTIME
IN LARGE SCALE
PRODUCTION
LESS THAN
REACTOR
CLEANING AFTER
OF PSS
PROCESSES
PSS APPLICATION
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Throughput
Configuration Etch time Cleaning time Loading Time Total Time Throughput (Wafers / h) 4” wafer 38 min 7 min 3 min 48 min > 8 6” wafer 45 min 7 min 3 min 50 min > 3 4’’ and 6’’ wafers Throughput calculations for 1.7 µm high sapphire patterns
Reactor manual cleaning after 1,000 µm of sapphire etch 1hour manual cleaning + 2 dummy runs after cleaning = Production stopped for 2 hours
MESA APPLICATION
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CORIAL’s Advantage
ETCH PROFILE
GAN ETCH RATE
SELECTIVITY
UNIFORMITY
6’’ WAFERS/HOUR
MESA APPLICATION
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Throughpput
Configuration Etch time Cleaning time Loading Time Total Time Throughput (Wafers / h) 4” wafer 7 min 1 min 4 min 12 min > 36 6” wafer 8 min 1 min 4 min 13 min > 15 4’’ and 6’’ wafers Throughput calculations for 1.2 µm high GaN patterns
ISO APPLICATION
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CORIAL’s Advantage
ETCH PROFILE
GAN ETCH RATE
SELECTIVITY
UNIFORMITY
WAFERS/HOUR
ISO APPLICATION
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Throughput
Configuration Etch time Cleaning time Loading Time Total Time Throughput (Wafers / h) 4” wafer 36 min 2 min 4 min 42 min > 9 6” wafer 36 min 2 min 4 min 42 min > 4 4’’ and 6’’ wafers Throughput calculations for 7 µm high GaN patterns
PROCESS CONTROL SOFTWARE
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COSMA
The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems DESKTOP APPLICATION
Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance
REMOTE CONTROL
COSMA
CORIAL OPERATING SYSTEM FOR MACHINE
REPROCESSING SOFTWARE
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COSMA RS
ANALYSIS OF RUNS DISPLAY UP TO
PARAMETERS FROM A RUN
CURVES TO CHECK PROCESS REPEATABILITY
Simple and efficient software to analyze process runs and accelerate process development
CORIAL 360IL
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300 mm ICP-RIE equipment for high performances and low CoO
Wide process range for Silicon, Metals, III-V and II-VI compounds Industry-leading uniformity and repeatability Large batch capacity with 23x2”, 7x4’’ or 3x6’’ wafer handling