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CORIAL 300S Simple-to-use, manually-loaded batch RIE system Wide - PowerPoint PPT Presentation

9/5/2018 CORIAL 300S Simple-to-use, manually-loaded batch RIE system Wide process range for metal Cost-effective mask repair Rapid batch loading of wafers sputtering (Au, Pt, Ti), technology with chrome 12x3 ; 7x4 ; 3x6 ;


  1. 9/5/2018 CORIAL 300S Simple-to-use, manually-loaded batch RIE system Wide process range for metal Cost-effective mask repair Rapid batch loading of wafers sputtering (Au, Pt, Ti), technology with chrome 12x3’’ ; 7x4’’ ; 3x6’’ ; 1x8’’ and Si, silicon-based etch capabilities using Loading of glass and quartz compounds (aSi-H, SiO2, chlorinated chemistry masks 2’’x2’’ up to 8’’x8’’ Si3N4), polymers etching using fluorinated gases Corial 300S 2

  2. SYSTEM DESCRIPTION CORIAL 300S

  3. 9/5/2018 SYSTEM DESCRIPTION General View 390 SMALL 960 600 FOOTPRINT Low CoO 0.81 m2 750 1080 360 490 420 Corial 300S 4

  4. 9/5/2018 SYSTEM DESCRIPTION Detailed View RIE reactor Direct loading Pumping system (TMP 500l/s and dry pump 110m 3 /h) Chiller / Heater HV and LV power supplies 1000 W RF generator Process controller (13,56 Mhz) Corial 300S 5

  5. 9/5/2018 SYSTEM DESCRIPTION Loading < 210 s Direct loading Shuttle LOADING TIME FAST LOAD AND UNLOAD EASY EXCHANGE BETWEEN SUBSTRATE SHAPE AND SIZE Corial 300S 6

  6. STANDARD RIE SOURCE CORIAL 300S

  7. 9/5/2018 RIE SOURCE Easy-to-use HIGH ETCH RATE 1. Heating of the cathode to enhance the desorption of by- products and to improve process performance CAPABILITY 2. Chrome and quartz etch capabilities making the Corial 300S ideal for mask repair applications 3. Optional end-point detection by laser interferometry for excellent etch control and etch rate determination 4. Retractable liner for sputter-etch increases time between cleans and reduces clean time 5. Shuttle (carrier) design, combined with a standard cathode, for a cost-effective and fast reactor adaptation, suitable for multiple applications and substrate types 6. Simple-to-use reactor with a large cathode that facilitates substrate loading, and substrate holders simply clamped on the cathode without the need for screws or fasteners 7. Minimized maintenance Corial 300S 8

  8. 9/5/2018 RIE SOURCE Operation Sequence Substrate Laser window Photomask or wafer holder PLASMA Cathode TMP Helium IN A He pressure at 5 Torrs Coolant IN maintains the substrate Coolant OUT holder at constant temperature Corial 300S 9

  9. PERFORMANCES RIE PROCESSES FOR MASK REPAIR CORIAL 300S

  10. 9/5/2018 RIE OF CHROME FOR MASK REPAIR Chlorinated chemistry RIE of Cr on quartz mask RIE of Cr mask with e-beam PR Etch rate Selectivity Uniformity Process Mask (nm/min) (vs mask) (across wafer) 50 2 ±3% Cr PR Corial 300S 11

  11. PERFORMANCES RIE PROCESSES CORIAL 300S

  12. 9/5/2018 RIE OF SI, OXIDES, AND NITRIDES Fluorinated chemistry RIE of SiO2 with PR mask – RIE of SiO2 – 15 µm deep RIE of aSi-H – 300 nm deep RIE of Si3N4 with PR mask Vertical profile – High etch uniformity Corial 300S 13

  13. 9/5/2018 RIE OF METALS Fluorinated chemistry Ti Etching with PR mask - Anisotropic profile Corial 300S 14

  14. 9/5/2018 HIGH ETCH RATES Excellent Uniformities Etch rate Selectivity Uniformity Process Mask (nm/min) (vs mask) (across wafer) ± 5% Polymers PR 400 1 ± 3% SiO 2 PR 50 3 ± 3% Si 3 N 4 PR 60 > 2 ± 5% Si PR 100 1 ± 5% Ti PR 25 0.3 Corial 300S 15

  15. RIE SOURCE FOR SPUTTER-ETCH CORIAL 300S

  16. 9/5/2018 SPUTTER-ETCH RIE Process Chamber for Etching and Sputtering LINER TO COLLECT ETCH-BY-PRODUCTS AND SPUTTERED MATERIALS EASY LINER replacement by 4 min 5 min a single person Pumping down Liner replacement to 10 -4 Tor Dedicated process 1 min 5 min chamber for Reactor Plasma Au, Ag, Ni, Fe, Co, Venting cleaning Pt, PZT … SPUTTERING Corial 300S 17

  17. 9/5/2018 SPUTTER-ETCH Ar chemistry Etch rate Selectivity Uniformity Process Mask (nm/min) (vs mask) (across wafer) Au, Pt, PZT, Fe, Co PR 45 > 1 ±5% Back sputtering of Pt with PR mask Corial 300S 18

  18. SHUTTLE HOLDING APPROACH CORIAL 300S

  19. 9/5/2018 SHUTTLE HOLDING APPROACH Benefits 1. Quick adaptation to sample shape and size 2. Optimum process conditions with NO modification of process chamber 3. Limited cross contamination between processes by using dedicated shuttles 4. Shuttles for single wafer treatment: 1 x 8”, 1 x 12” 5. Shuttles for batch wafer processing : 12x3’’, 7 x 4”, 3 x 6” 6. Shuttles for photomask repair 2’’x2’’ up to 8’’x8’’ Corial 300S 20

  20. 9/5/2018 SHUTTLE HOLDING APPROACH Portfolio carrier for photomask carrier for wafer 5’’x5’’ photomask 6’’x6’’ photomask 100 mm wafer 7’’x7’’ photomask Corial 300S 21

  21. USABILITY CORIAL 300S

  22. 9/5/2018 PROCESS CONTROL SOFTWARE COSMA COSMA CO RIAL O PERATING S YSTEM FOR MA CHINE The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems DESKTOP APPLICATION Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance REMOTE CONTROL Corial D250 / D250L 23

  23. 9/5/2018 REPROCESSING SOFTWARE COSMA RS DISPLAY UP TO Simple and efficient 4 software to analyze process runs and accelerate process development PARAMETERS FROM A RUN REMOTE ANALYSIS OF RUNS DRAG AND DROP CURVES TO CHECK PROCESS REPEATABILITY Corial 300S 24

  24. 9/5/2018 END POINT DETECTION EPD with laser A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the wafer surface and the laser beam impact on it. A 20 µm diameter laser spot facilitates the record of interference signals. Real-Time etch rate measurement Real-Time etched depth measurement Corial 300S 25

  25. 9/5/2018 CORIAL 300S Simple-to-use, manually-loaded batch RIE system Wide process range for metal Cost-effective mask repair Rapid batch loading of wafers sputtering (Au, Pt, Ti), technology with chrome 12x3’’ ; 7x4’’ ; 3x6’’ ; 1x8’’ and Si, silicon-based etch capabilities using Loading of glass and quartz compounds (aSi-H, SiO2, chlorinated chemistry masks 2’’x2’’ up to 8’’x8’’ Si3N4), polymers etching using fluorinated gases Corial 300S 26

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