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CMOS Monolithic Active Pixel Sensors A tool to measure open charm - - PowerPoint PPT Presentation

CMOS Monolithic Active Pixel Sensors A tool to measure open charm particles M. Deveaux Goethe-Universitt Frankfurt/M Sherlock Holmes and Mystery of the Soup or How to build a webcam based carrot detector M. Deveaux Goethe-Universitt


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SLIDE 1

CMOS Monolithic Active Pixel Sensors

  • M. Deveaux

Goethe-Universität Frankfurt/M A tool to measure open charm particles

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SLIDE 2

Sherlock Holmes and Mystery of the Soup

  • r

How to build a webcam based carrot detector

  • M. Deveaux

Goethe-Universität Frankfurt/M

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SLIDE 3

A Question to Sherlock Holmes

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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  • Prof. Dr. Johanna Wanka, Federal

Minister of Research, Germany

The cook The soup

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SLIDE 4

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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How can one check that the soup has cooked?

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SLIDE 5

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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?

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SLIDE 6

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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SLIDE 7

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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=

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SLIDE 8

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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Dissolves fast Gets quickly soft if cooked Gets slowly soft if cooked

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SLIDE 9

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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Lets test ingredients, which keep information on the cooking process.

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SLIDE 10

Sherlock Holmes Quest

  • M. Deveaux, FAIRNESS Workshop, 3. – 8. Sept 2012, Hersonissos, Greece

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Dissolves also at room temperature Keeps softening after cooking Reacts slowly, might overlook cooking

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SLIDE 11

Sherlock Holmes Quest

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We will have to test as many ingredients as possible to ob- tain a conclusive answer.

The Quest of modern heavy ion experiments

CBM

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What means soup: Hadronic Matter

  • M. Deveaux

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SLIDE 13

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What means carrot: Observables

UrQMD transport calculation U+U 23 AGeV

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SLIDE 14

My topic today

  • M. Deveaux

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  • Cent. AuAu coll. at 25 AGeV

160 p 400 - 400 + 44 K+ 13 K- UrQMD + GEANT4

in this!

D0 (cū) K- (ūs) π+ (uđ)

find this…

ct = 123 µm

  • I. Vassiliev, C. Dritsa

How can this technology help to…

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SLIDE 15

Why webcams?

  • M. Deveaux

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SLIDE 16

Why webcams

  • M. Deveaux

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Add metall foil to deflect light A little radioactivity (Am-241, 60 keV photons work fine)

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SLIDE 17

Why webcams?

  • M. Deveaux

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SLIDE 18
  • M. Deveaux

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How does a webcam work?

Reset +3.3V +3.3V Output SiO2 SiO2 SiO2

N++ N++ N+

P+ P- P+ 15µm 50µm

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SLIDE 19

The pre-amplifyer

  • M. Deveaux

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Layout of a classical Active Pixel (simplified) Amplifier (Source Follower)

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SLIDE 20

Operation principle of the pre-amplifyer

  • M. Deveaux

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Reset Pixel- capacitor- basin Readout- electronik- man Water = positive charge Level indicator (Charge-voltage- converter) MIP-man Photodiode- tap

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SLIDE 21

Operation principle of the pre-amplifyer

  • M. Deveaux

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Readout cycle in three steps: First step: Readout-electronic-Man gives a Reset When the basin is fully recharged, the water level is noted for reference.

At a photodiode,

  • nce observes a

leakage current.

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SLIDE 22

Operation principle of the pre-amplifyer

  • M. Deveaux

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Second step: Readout-elektronic-man has care for his other pixels now Sometimes MIP-man passes by to take bucket of positiv charge (electrons are collected by the diode after a hit).

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SLIDE 23

The operation principle of the pre-amplifyer

  • M. Deveaux

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Third step: Readout-elektronik-man returns to check the water-level in the basin. The level has dropped => MIP-man must have passed by. ??? MAPS pixels may measure even if they are disconnected from readout electronics and power supply.

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SLIDE 24

Some sources of uncertainty

  • M. Deveaux

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Shot noise: Number of fallen drops fluctuates over time. Noise Gain of the indicator is different for each pixel

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SLIDE 25

Relation between model and schematics

  • M. Deveaux

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SLIDE 26

Readout system of early MAPS

  • M. Deveaux

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Architecture of MIMOSA I X- and Y-shift registers to select pixels. IO-Signals needed: Clock, Reset, Synchro and analogue output Common Amplifier

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SLIDE 27

Comparing pixel sizes

  • M. Deveaux

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State of the art hybrid pixel (100µm x 120 µm) Maps-pixel (25 x 25 µm²) Hybrid pixel Hybrid pixel Hybrid pixel

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SLIDE 28

MAPS: The operation principle

  • M. Deveaux

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Reset +3.3V +3.3V Output SiO2 SiO2 SiO2

N++ N++ N+

P+ P- P+ 15µm 50µm

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SLIDE 29
  • M. Deveaux

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The meaning of thin…

Bending radius: ~30 cm Size: 21.2 x 10.6 mm2

  • 50 µm thickness
  • Bended due to inner tensions
  • Flexible silicon!
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SLIDE 30
  • M. Deveaux,

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Open charm reconstruction: Concept

Primary Beam: 25 AGeV Au Ions (up to 109/s)

Primary vertex Secondary vertex Short lived particle D0 (ct = ~ 120 µm) Detector 1 Detector2 Target (Gold)

z

Reconstruction concept for open charm

Central Au + Au collision (25 AGeV)

  • A good time resolution to distinguish

the individual collisions (few 10 µs)

  • Very good radiation tolerance

(>1013 neq/cm²) Reconstructing open charm requires:

  • Excellent secondary vertex

resolution (~ 50 µm)

=> Excellent spatial resolution (~5 µm) => Very low material budget (few 0.1 % X0) => Detectors in vacuum

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SLIDE 31

M.Deveaux

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Established pixel detector technologies (2003)

Required (CBM) Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~0.1% ~100 << 1010 NA60 hybrid pixel

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SLIDE 32
  • M. Deveaux

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Requirements vs. detector performances (2003)

Required Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% ~ 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~ 0.1% ~100 << 1010

NA60 hybrid pixel More sensitivity More statistics

We need both

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SLIDE 33

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Performances of MAPS (2003)

Required Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~0.1%* ~100 << 1010 MAPS** (2011) 3.5 ~0.05%* ~10000 > 1012

*Sensor only **Best of all prototypes

MAPS provide an unique compromise between:

  • sensitivity
  • high rate capability
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SLIDE 34
  • M. Deveaux

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Easy, isn’t it? X0 ? neq/cm² ???

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X0 and multiple scattering

  • M. Deveaux

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Definition of the radiation length (X0):

  • Distance in a material, which decelerates charged particles with

to 1/e of its energy.

  • Material constant, tables available at http://pdg.lbl.gov

Relevance of the radiation length (X0): x Uncertainty range 1) The thinner, the better. 2) 1% X0 = 1mm silicon

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What means neq/cm²?

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Relative non ionising dose of neutrons and pions

0,1 1 10 100 1000 10000 0,0 0,5 1,0 1,5 2,0

NIEL - Factor [n

eq ]

E

kin [MeV]

Neutrons Pions

Data from: A. Vasilescu and G. Lindstroem, Displacement damage in Silicon

  • n-line compilation: http://sesam.desy.de/~gunnar/Si-dfuncs
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SLIDE 37

Radiation tolerance

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SLIDE 38

What about radiation hardness?

  • M. Deveaux

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Ionising radiation:

  • Energy deposited into the electron cloud
  • May ionise atoms and destroy molecules
  • Caused by charged particles and photons

Non-ionising radiation:

  • Energy deposited into the crystal lattice
  • Atoms get displaced
  • Caused by heavy (fast leptons, hadrons)

charged and neutral particles

Farnan I, HM Cho, WJ Weber, 2007. "Quantification of Actinide α-Radiation Damage in Minerals and Ceramics." Nature 445(7124):190-193.

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SLIDE 39

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Sensor R&D: Tolerance to non-ionising radiation

+3.3V Output SiO2 SiO2

N++ N+

SiO2 SiO2

P++ P++ P++

GND GND +3.3V

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SLIDE 40

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Sensor R&D: Tolerance to non-ionising radiation

+3.3V Output SiO2 SiO2

N++ N+

SiO2 SiO2

P++ P++ P++

GND GND +3.3V

Key observation: Signal amplitude is reduced by bulk damage

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SLIDE 41

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Sensor R&D: Tolerance to non-ionising radiation

+3.3V Output SiO2 SiO2

N++ N+

SiO2 SiO2

P++ P++ P++

GND GND +3.3V

Electric field increases the radiation hardness of the sensor Draw back: Need CMOS-processes with low doping epitaxial layer E

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S/N of MIMOSA-18 AHR (high resistivity epi-layer)

  • M. Deveaux

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Plausible conclusion: Radiation tolerance ~1014 neq/cm² reached

  • Cooling required to operate heavily irradiated sensors

Safe operation

5 10 15 20 25 30 10 20 30 40 50 60 70 80

10µm 12.5µm 25µm T=-34°C/-70°C Signal to Noise (Ru-106 ) Radiation dose [10

13neq/cm 2]

Mimosa-9 (2005) 20 µm standard epi 0.2 x 1013 neq/cm²

  • D. Doering, P. Scharrer, M. Domachowski

Sensor design: PICSEL Group, IPHC Strasbourg, et al. Sensor test and plots: AG Stroth, IKF Frankfurt/M

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Noise and cooling

  • M. Deveaux

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5 10 15 20 25 30 35 40 45 50 55 60

  • 34
  • 27
  • 15

Noise [e] Temperature [°C] Unirradiated 10

14neq/cm 2

3·10

14neq/cm 2

  • 3

Radiation damage

Cooling is needed to exploid the improved radiation tolerance Alternative solution: Fast integration times help tInt= 4 ms (slow)

Sensor design: PICSEL Group, IPHC Strasbourg, et al. Sensor test and plots: AG Stroth, IKF Frankfurt/M

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SLIDE 44

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Performances of MAPS

Required Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~0.1%* ~100 << 1010 MAPS** (2011) 3.5 ~0.05%* ~10000 > 1012

*Sensor only **Best of all prototypes

Sensor design: PICSEL Group, IPHC Strasbourg, et al. Sensor test and plots: AG Stroth, IKF Frankfurt/M

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SLIDE 45

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Performances of MAPS

Required Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~0.1%* ~100 << 1010 MAPS** (2011) 3.5 ~0.05%* ~10000 ~ 1014

*Sensor only **Best of all prototypes

Sensor design: PICSEL Group, IPHC Strasbourg, et al. Sensor test and plots: AG Stroth, IKF Frankfurt/M

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SLIDE 46

Sensor R&D: How to gain speed

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External ADC Sensor Offline Cluster finding Output

Add pedestal correction ~1000 discriminators On - chip cluster-finding processor

Output: Cluster information (zero surpressed)

MAPS are built in CMOS technology Allows to integrate:

  • sensor
  • analog circuits
  • digital circuits
  • n one chip.
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SLIDE 47

Sensor R&D: How to gain speed

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Pixel with pedestal correction ~1000 discriminators On - chip cluster-finding processor

Output: Cluster information (zero surpressed)

MIMOSA-1 (2000) MIMOSA-5 (2002) MIMOSA-20 (2006) MIMOSA-26 (2009) Readout Serial Serial Serial Mk. 2 Digital Pixel/line/s 5M 20M 50M 2500M

Data/sensor: 1200 Mbps 160 Mbps

Serial readout parallel Readout time before: 1-20 ms Readout time now: ~100 µs Improve further with shorter columns.

Sensor design: PICSEL Group, IPHC Strasbourg, et al.

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Performances of MAPS

Required Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~0.1%* ~100 << 1010 MAPS** (2011) 3.5 ~0.05%* ~10000 ~ 1014

*Sensor only **Best of all prototypes

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SLIDE 49

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Performances of MAPS

Required Hybrid pixels Single point res. [µm] ~ 5 ~ 30 Material budget [ X0 ] ~ 0.3% 1% Time resolution [µs] few 10 0.025

  • Rad. hardness [n/cm²]

> 1013 >> 1014 CCD ~ 5 ~0.1%* ~100 << 1010 MAPS** (2011) 3.5 ~0.05%* 30-100 ~ 1014

*Sensor only **Best of all prototypes

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Applications of MAPS

EUDet Telescope ILC? STAR HFT CBM MVD ALICE ITS? 2008 2013 2018

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Need for Speed II: A new generation at the horizon

  • M. Deveaux

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Reset +3.3V +3.3V Output SiO2 SiO2 SiO2

N++ N++ N+

P+ P- P+ 15µm 50µm N+ P P In standard CMOS sensors, no PMOS transistors are possible in pixel => No high level functions like discriminators … => “slow” PMOS Transistor

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SLIDE 52

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Going beyond rolling shutter

“Standard” CMOS “Advanced” CMOS SOI Sensors 3D VLSI integration Separate sensor and electronics on chip

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Advanced CMOS

  • M. Deveaux

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Reset +3.3V +3.3V Output SiO2 SiO2 SiO2

N++ N++ N+

P+ P- P+ 15µm 50µm N+ P P Full CMOS is reached in modern 0.18µm processes with quad-well Exploited for IPHC – AROM sensors (discriminator on pixel) + Simple, cost efficient, widely available in industry + Industrial trend toward better epitaxial layers

  • On pixel electronics limited by pixel surface

deep P-well

Players among others: PICSEL Group, IPHC Strasbourg, et al.

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SOI - Pixels

  • M. Deveaux

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SOI - Pixels

  • M. Deveaux

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+ Dedicated sensor silicon + dedicated electronics silicon + Conceptually more radiation tolerance possible

  • Thick BOX – Oxide may be vulnerable to radiation damage
  • Still under early R&D, moderate industrial support
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Latest news (Yasuo Arai, Vertex 2013)

  • M. Deveaux

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Electronics Current shield Current shield E-Field shield Active volume

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3D VLSI integration, the best of all worlds

  • M. Deveaux

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  • Individual chips form always a compromise.
  • 3D VLSI integration aims to pile chips and to connect them
  • Potential: Get the best of all worlds

Players among others: Fermilab, ÁIDA Collaboration

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SLIDE 58

How to put chips together (simplified)

  • M. Deveaux

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  • Drill holes (via) deep into the chips and fill with metal
  • Thin silicon until vias are seen on back side
  • Add “bond pads” on the back side
  • Bond chips

Players among others: Fermilab, ÁIDA Collaboration

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SLIDE 59

Status: (Ray Yarema, VERTEX2013)

  • M. Deveaux

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  • Prototypes submitted by large community, coordinated by Fermilab
  • Industry failed with bonding => Years of delays and desasters
  • Finally, few months ago:
  • First individual working devices delivered and tested
  • Problems are understood:

a) Don’t take industry by the letter b) Use bigger “through vias” to ease alignment while bonding

  • Future submissions should be much easier

Ray Yarema: In hindsight, … , we might have saved ~ 2 years and avoided a lot of grief. That’s why it is called research.

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The final question: How to do system integration

  • M. Deveaux

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Again, this structure will be fixed with the novel Anti Gravitation Glue™.

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Outlook: The story has just started

Idea from R. De Oliveira, W.Dulinski

SERNWIETE (mechanical demonstrator) A bended MIMOSA-26 in a foil

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SLIDE 62

Outlook: The story has just started

Idea from R. De Oliveira, W.Dulinski

SERNWIETE (mechanical demonstrator) A bended MIMOSA-26 in a foil

PICSEL group, IPHC Strasbourg AG Prof. Stroth, Goethe University Frankfurt

My collaborators:

What else should have been mentioned:

  • I. Peric, ZITI, Heidelberg – Partially depleted 2.5D MAPS
  • V. Re et al, INFN, Pavia, Bergamo – MAPS with discriminator/shaper

… ând many others…