SLIDE 4 12/13/2018 4
Fabrication – Sacrificial Layer
Sacrificial Release Process [7] An illustration of surface micromachining [8] (a) Substrate doping, etch-stop layer deposition, first sacrificial layer deposition and patterning. (b) Reduced etch channel height regions. (c) Active area definition. (d) Membrane deposition. (e) Sacrificial layer etch hole definition and Si3N4 etch. (f) Membrane release in KOH. (g) Membrane sealing with more Si3N4 deposition. (h) Top electrode deposition and patterning.
Fabrication – Wafer-bonding
(a)
Preparation of wafers.
(b)
Through thermal oxidation, oxide layers are formed on the surface of Wafer 1, then a spacer and 0.15 μm SiO2 insulating layer are formed using photolithography and wet etching.
(c)
By low-temperature bonding, Wafer 1 and Wafer 2 are bonded.
(d)
The silicon substrate of Wafer 2 is eliminated. Subsequently, the buried oxide layer of Wafer 2 is corroded away.
(e)
The rest of Wafer 2 is processed by photolithography and dry etching to form the isolation channel.
(f)
In order to effectively isolate the top electrode and vibration membrane, low pressure chemical vapor deposition (LPCVD) deposits SiO2.
(g)
The top of Wafer 2 is sputtered with metal Aluminum.
(h)
In order to form the Aluminum electrode and metal bonding pads, a lift-off process is used.
Steps of the Wafer Bonding Method [2]