All-Digital PLL Frequency and Phase Noise Degradation Measurements - - PowerPoint PPT Presentation

all digital pll frequency and phase noise degradation
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All-Digital PLL Frequency and Phase Noise Degradation Measurements - - PowerPoint PPT Presentation

All-Digital PLL Frequency and Phase Noise Degradation Measurements Using Simple On-Chip Monitoring Circuits Gyusung Park, Bongjin Kim*, Minsu Kim, Vijay Reddy** and Chris H. Kim University of Minnesota, Minneapolis, MN, USA *Nanyang


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All-Digital PLL Frequency and Phase Noise Degradation Measurements Using Simple On-Chip Monitoring Circuits

Gyusung Park, Bongjin Kim*, Minsu Kim, Vijay Reddy** and Chris H. Kim

University of Minnesota, Minneapolis, MN, USA *Nanyang Technological University, Singapore **Texas Instruments, Dallas, TX, USA park1582@umn.edu chriskim.umn.edu

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SLIDE 2

2

  • Experimental study of all-digital PLL

(ADPLL) reliability issues

  • ADPLL frequency and phase window

measurements using on-chip monitors

Purpose

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SLIDE 3

3

Outline

  • Motivation
  • Proposed on-chip monitors
  • 65nm ADPLL chip test setup
  • Stress, recovery, annealing results
  • Conclusions
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SLIDE 4

4

Target Circuit: All-Digital Phase Locked Loop (ADPLL)

Phase Detector PI Controller Digitally Controlled Oscillator ÷ N

  • Freq. Divider

Fout=N*Fref 0 or 1 Control

  • utput

Fref

  • Key building block for processor clock

generation and wireless communication

  • No prior work on ADPLL reliability behavior
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SLIDE 5

5

ADPLL Reliability Figure-of-Merit

  • Frequency: open-loop and closed-loop
  • Phase noise, jitter degradation

DCO: Digitally Controlled Oscillator

  • V. Reddy, et al., IEDM 2009
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SLIDE 6

6

Drawback of Conventional Off-chip Measurement

  • Requires high speed probes or packages, off-

chip drivers and connectors

  • Each of these components introduces

inaccuracy in the measurement

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SLIDE 7

7

Outline

  • Motivation
  • Proposed on-chip monitors
  • 65nm ADPLL chip test setup
  • Stress, recovery, annealing results
  • Conclusions
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SLIDE 8

Beat Frequency Monitor

8

“Silicon Odometer”, T. Kim, et al., JSSC 2008

  • “Silicon odometer” beat frequency detection circuit

adopted for frequency measurements

  • Higher precision (~ps) and shorter measurement time (~μs)

compared to simple counter based scheme

Counter Reset

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SLIDE 9

Beat Frequency Monitor Before Stress

9

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Beat Frequency Monitor Under Stress

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11

Phase Window Monitor

  • D. Jiao, JSSC 2012
  • Clock period (including jitter) compared with tunable

delay

  • Indirectly measure phase noise by sweeping tunable

delay

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SLIDE 12

12

Phase Window Measurement

  • As tunable delay approaches

the clock period, error rate increases

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SLIDE 13

13

Phase Window Measurement

  • As tunable delay increases

beyond the clock period, error rate decreases

  • Phase window in right

figure = a measure of phase noise

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SLIDE 14

14

Outline

  • Motivation
  • Proposed on-chip monitors
  • 65nm ADPLL chip test setup
  • Stress, recovery, annealing results
  • Conclusions
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SLIDE 15

Die Photo and Chip Description

15

Process 65nm CMOS System All-Digital PLL Nominal supply 1.2V Stress supply 2.4V Annealing temp. 110°C, 240°C DCO frequency (free running) 720MHz @1.2V 1.54GHz @2.4V Circuit area 0.08mm2

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16

Measurement Setup

Pattern Generation & Acquisition Equipment Control software Oscilloscope Power Supply Hot Plate DUT

No power @ 110° ° ° °C, 240° ° ° °C

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SLIDE 17

Open-loop and Closed-loop Configurations

17

  • Stress mode: Stress supply (2.4V) for stressed

DCO, 0V for reference DCO

  • Measurement mode: Nominal supply (1.2V) for

both stressed and reference DCOs

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SLIDE 18

18

Outline

  • Motivation
  • Proposed on-chip monitors
  • 65nm ADPLL chip test setup
  • Stress, recovery, annealing results
  • Conclusions
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SLIDE 19

Open-Loop Results: Frequency

  • Stress 

   BTI, HCI     frequency degradation

  • Natural recovery and annealing
  • Cool down the chip after annealing 

   remove any residual heat

19

(a) Stressed @ 27°C, 2.4V, 1.54GHz (b) Natural recovery @ 27°C, 0V (c) Annealing @ 110°C, 0V (d) Annealing @ 240°C, 0V

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SLIDE 20

Open-Loop Results: Frequency

20

(a) Stressed @ 27°C, 2.4V, 1.54GHz (b) Natural recovery @ 27°C, 0V (c) Annealing @ 110°C, 0V (d) Annealing @ 240°C, 0V

  • Stress 

   BTI, HCI     frequency degradation

  • Natural recovery and annealing
  • Cool down the chip after annealing 

   remove any residual heat

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SLIDE 21

Open-Loop Results: Phase Window

  • Phase window @ error rate = 1E-8
  • More degradation 

   larger phase window

21

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SLIDE 22
  • Feedback loop ensures that output frequency is

constant

22

DCO Frequency Degradation (%) (open loop) PLL Frequency (MHz, closed loop)

65nm, 1.2V, 27°C

Closed-Loop Results: Frequency

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SLIDE 23

Closed-Loop Results: Phase Window

23

  • Error rate curves all centered around same frequency due

to feedback loop

  • Longer stress 

   larger phase window

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SLIDE 24
  • Phase window almost fully recovered after annealing

@ 240° ° ° °C

24

Phase Window Recovery

Closed-loop Open-loop

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SLIDE 25

25

Outline

  • Motivation
  • Proposed on-chip monitors
  • 65nm ADPLL chip test setup
  • Stress, recovery, annealing results
  • Conclusions
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SLIDE 26

Conclusions

26

  • ADPLL

frequency and phase noise characterized for the first time using on-chip monitors

  • Phase noise increases with stress for both
  • pen-loop and closed-loop configurations
  • High temperature annealing can be used to

recover most of the degradation

  • Post-stress

phase noise measurements critical for reliability assurance