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*��9PRZV��c]S� �C�bXdPbX�]�& L&�Pg�X�PVX]V�eXb��>[Paa�>�C 2 L&�Pg First reported in 2014. T. Fujiwara, et al., IEEE NSS/MIC 2014 X�]XhT�VPa ��X�P�g�T[TRb��] T Ib��]V�T[TRb�XR��XT[S /1)a� �5+)Z�(R�� T[TRb��]�PdP[P]R�T *))��p�XN����9@ ▶ ���������h��������u��9@ L*M �����XN����9@� L�M ▶ ���XN����9@k ����� i �����w���w���� � �wi ����w����m��zw��wj�wz�� � �w�����i ���2)%)))�������� N,O � ������i ����z�z���� � N*O�=��IPc[X%�D@C�8%�d�[��,1/%�]���+%�����.,*i.,-%��*220� �&�Ne�V�NTR���NWR��cV�U�[��VPNX��RNQ[a���XN����9@ N+O�?��JPZP�Pa�X%�Tb�P[�%�D@C�8%�d�[��0+-%�����*i-%��+)*,� N,O�J��=c�XeP�P%�Tb�P[�%�A@DIJ%�d�[��2%�����**))0�& **))0%��+)*-� Takeshi Fujiwara

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+��>[Paa�>�Cl��������� 4 1. Glass Substrate HI Photo Mask 2. UV exposure (1 st _exp) Crystal portion (Li 2 O � SiO 2 ) 3. Crystal formation (heat treatment) Via 4. Via etching HF etching (Hydrogen Fluoride wet etching) Cr sputter 5. Poison Metallization Grinder Remove Cr in surface (remains in via) 6. Remove metal except in via Metallize Cu 7. Metallization process II (Cu) (inside via also) IT[TRbXdT[g� 8. Selectively etch metal in via �T��dT�:�� �T�PX]a�X]�dXP N-O�J��=c�XeP�P%�Tb�P[�%�D@C�8%�101��+)*1� Takeshi Fujiwara

+��>[Paa�>�Cl��������� 5 Etching machine DC sputtering machine for Cr DC sputtering machine for Cu UV exposure machine Laser microscope Plating machine Polishing machine �����vs������������ Takeshi Fujiwara

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uk�����������>[Paa�>�C 8 BXQ���[PR�� GUR�ARc���[PR�� Smooth electrode : Uniformity of the electric field improves, and the GEM’s stability improves Takeshi Fujiwara

uk�����������>[Paa�>�C 9 E[S����RTaa DTe����RTaa Fig.1 Pulse height spectra of 5.9 keV Fig. 2 Gas gain curve Energy resolution 19%, gas gain 10,000 Operation voltage decreased from the past process Takeshi Fujiwara

1000 3000 Wavelength (nm) 200 300 400 500 600 700 ▶ 800 ▶ 0 ▶ 2000 4000 ,k������w�>[Paa�>�C������ 10 X-ray CRNW�/�)��� *)) GcP]bc��T��XRXT]Rg���� Gas molecular :CEI�RP�T�P >Pa�aRX]bX[[PbX�]�a�TRb�P 1, Intensity .) electron multiplication in gas volume Gas scintillation Ar + CF 4 is known as a good scintillation gas. Firstly reported by Fraga in 1999 [6] Large amount of scintillation photons would be produced during Glass GEM’s high gain avalanche process Gas scintillation can optically readout with CMOS camera L/M�:�5�:��:�NTN%�AFF�@�7��999%�*222 Takeshi Fujiwara

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▶ ▶ ▶ ▶ J�T�STbTRb���STaXV] N1%2O 12 �XN����9@ >[Paa�>�C�p ���� p ��m p :CEI‒�� ������������������wL�‒�� ��l�ts������z��y~�����w778��� ��������� �����u�y~���i��i�����l���w�� Outlook of the detector N1O�J��=c�XeP�P%�Tb�P[�%�A@DIJ%���[��1%�D���0��+)*,� N2O�J��=c�XeP�P%�Tb�P[�%�D@C�8%�1.)��+)*0� Takeshi Fujiwara

-���f�T�X�T]bP[��Tac[b�i @�PVX]V�aTbc� 13 DAQ and control PC CMOS Camera 10 sec integration dark box Scintillating gas :CEI�:P�T�P �N�N�N��a filled chamber BE75&:XN�U-�)�I, Glass GEM (100 × 100mm) X-ray tube 20 kV, 100 uA Object (a hornet) ������ L&�Pg�bcQT mirror �N�N�N��a �2/,* Gas scintillation Rotating stage Takeshi Fujiwara

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-���f�T�X�T]bP[��Tac[b�i ,��L&�Pg�:���cbTS�J���V�P��g��:J� 16 ▶ Reconstructed with 360 X-ray images taken with Glass GEM ▶ 2 sec exposure time ▶ Took 20 minutes ▶ Filtered back projection method ▶ GEMs can easily amplify small signals with gains of up to 10 4 . ▶ This feature of GEMs is highly advantageous for large-area soft- X-ray imaging. Takeshi Fujiwara

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