Who We Are Who We Are An international not- -for for- -profit, - - PDF document

Who We Are Who We Are

An international not An international not-

• for

for-

• profit, scientific society

profit, scientific society

• f more than
• f more than 8

8,000

,000 engaged in solid state and engaged in solid state and electrochemical science and technology. electrochemical science and technology. The mission of ECS is to disseminate scientific The mission of ECS is to disseminate scientific knowledge in order to advance the theory and knowledge in order to advance the theory and practice of electrochemistry and allied subjects. practice of electrochemistry and allied subjects.

ECS Membership by Sections ECS Membership by Sections

Arizona 117 Japan 770 Brazilian 50 Korea 193 Canadian 286 Mexican 3 Chicago 206 National Capital 182 Cleveland 110 New England 319 Detroit 101 Pittsburgh 97 European 1023 San Francisco 368 Georgia 161 Texas 172 Israel 24 Twin Cities 91

Europe—1023 Japan—770 San Francisco—368 Canada—286 Georgia—161 National Capital—182 Chicago—206 New England—319

10 Largest ECS Sections

Korea—193 Texas—172

ECS Membership by Divisions ECS Membership by Divisions

Battery 1291 High Temperature Materials 210 Corrosion 529 Industrial Electrochemistry and Electrochemical Engineering 261 Dielectric Science and Technology 350 Luminescence and Display Materials 110 Electrodeposition 517 Organic and Biological Electrochemistry 207 Electronics and Photonics 752 Physical and Analytical Electrochemistry 627 Energy Technology 838 Sensor 240 Fullerenes, Nanotubes, and Carbon Nanostructures 198

1902 ECS founded 1921 Electrodeposition Electrothermics 1932 Electronics 1936 General & Theoretical 1940 Organic & Biological Electrochemistry 1942 Corrosion

(formerly Corrosion Technical Committee)

1943 Industrial Electrolytic 1945 Electric Insulation 1947 Battery 1954 Electrothermics & Metallurgy (formerly

Electrothermics)

1965 Dielectrics & Insulation

(formerly Electric Insulation)

1969 New Technology 1971 Physical & Analytical Electrochemistry (formerly

General & Theoretical)

1982 Luminescence & Display Materials 1983 Energy Technology 1984 SOTAPOCS 1988 Sensors 1990 Dielectric Science & Technology

(formerly Dielectrics & Insulation)

Industrial Electrolysis & Electrochemical Engineering

(formerly Dielectrics & Insulation)

1993 Fullerenes, Nanotubes & Carbon Nanostructures 2002 Nanotechnology 2004 Fuel Cells 2005 Physical & Analytical Electrochemistry

(formerly Physical Electrochemistry)

Electronics & Photonics

(formerly Electronics)

HISTORY HISTORY

High Temperature Materials 1982 2006 Industrial Electrochemistry & Electrochemical Engineering

(formerly Industrial Electrolysis & Electrochemical Engineering)

Where We Are Going…

• Science is increasingly

international and ECS has responded by expanding its international presence.

Section Growth Section Growth

500 1000 1500 2000 2500 3000 3500 North America Europe Japan & Korea

North America 2969 2980 2901 2699 2922 2903 2861 2826 2810 3014 2281 Europe 813 891 1076 985 1093 1025 1029 1178 1033 1367 1048 Japan & Korea 514 575 747 764 900 927 911 978 971 1285 963 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006

Number

• f Members

Honolulu, Spring 1993 Attendance: 2470 Papers: 2189 Symposia: 50 Honolulu, Fall 1999 Attendance: 2906 Papers: 2410 Symposia: 43

Reaching across the Pacific

Honolulu, Fall 2004 Attendance: 2667 Papers: 2643 Symposia: 46

Honolulu – Honolulu – Fall 2008 Fall 2008 PRiME 2008

Jointly sponsored with:

The Electrochemical Society of Japan Technically sponsored by: Japan Society of Applied Physics Korean Electrochemical Society Electrochemistry Div. of the Royal Australian Chemical Institute Chinese Society of Electrochemistry

Honolulu, Fall 1987 Attendance: 2537 Papers: 1703 Symposia: 57

Reaching across the Atlantic

216th ECS Meeting October 4-9, 2009 • Austria Center

Vienna Vienna Paris Paris

2003 Attendance… 2939 Papers……… 2942 Symposia…….. . 57 1997 Attendance… 2952 Papers……… 2463 Symposia…….. . 24

CSZ1

Where We Are Going

• Science is increasingly

international and ECS has responded by expanding its international presence.

• Information will always be our

core product.

See our website at:

www.electroch em.org

Slide 11 CSZ1 this language is previously repeated

CSZ, 7/19/2004

• Journal of The Electrochemical

Society Electrochemical and Solid-State Letters nterface ECS Transactions Meeting Abstracts

All ECS content, in one seamless All ECS content, in one seamless resource, available all the time. resource, available all the time.

• Proceedings Volume series
• Monographs
• ECS Learning Center
• ECS History Center

scientific community. Our obligation to our broad constituency is to provide the “connectivity” so essential in the current

• I

CSZ2

Information Will Always Be Our Core Product

The ECS journals publish on an “e-first” basis, with articles posted to the Web as soon as they are ready. Monthly paper and annual CD-ROM editions follow.

The Journal of The Electrochemical Society is the most highly-cited journal in the field, according to the 2006

We are committed to providing it better and faster. We are committed to providing it better and faster.

968 published manuscripts 6061 published technical pages 411 published manuscripts 1521 published technical pages

2006 issues

• ISI Science Citation

Index.

Slide 13 CSZ2 lanugauge repeated. Try info-- then the better faster line....

CSZ, 7/19/2004

Spring 2007

64 pages, including the Chicago Special Meeting Section

Summer 2007

92 pages, including the Phoenix Call for Papers

Fall 2006

232 pages, including the Cancun Meeting

Winter 2006

80 pages, including the Washington, DC Call for Papers Program

Where We Are Going

• Science is increasingly

international and ECS has responded by expanding its international presence.

• Information will always be our core

product.

• Student Members are the

future of the Society.

Student Members Are the Future of the Society

We actively recruit students and work to retain our student members through

• Awarded student

memberships

• Student poster session

prizes

• Summer fellowships
• Oronzio de Nora

Scholarship

• Travel grants
• Division research prizes
• Student Chapters

Case for Support Goals Case for Support Goals

“Why Support ECS?”

Further expansion of the ECS Digital Library and online archive. Further expansion of the ECS Digital Library and online archive. Organizing Student Chapters around the world. Organizing Student Chapters around the world. Keeping our members on the cutting edge of the industry. Keeping our members on the cutting edge of the industry. To expand our biannual meetings in format, size and educational To expand our biannual meetings in format, size and educational

• pportunities.
• pportunities.

Foster innovation through the support of student awards. Foster innovation through the support of student awards. Bridge gaps between scientific generations and divisions. Bridge gaps between scientific generations and divisions.

www.electrochem.org www.electrochem.org

Our Financial Profile

2006 General Operating Fund 2006 General Operating Fund

Total Income: $4,370,000 Total Expenses: 4,427,000 Net Deficit: $ (57,000)

G&A $1,873 ECS Transactions & Other Publications $218 Journal $1,092 Interface— $133 Letters— $312 Development —$43 Meetings— $632 Other Activities—$111

2006 General Operating Fund

Total Total Expenses: $4,427,000 Expenses: $4,427,000

Numbers are to the nearest thousandth

$13—Membership

$167— Development $317—Other Activities $168—ECS Transactions & Other Publications $315—Letters $104—Interface Journal $1,308 $538— Membership

2006 General Operating Fund

Total Income: $4,370,000 Total Income: $4,370,000

Numbers are to the nearest thousandth

Meetings $1,453

Our headquarters occupies one of four buildings we own in Howe Commons, a 3½-acre prime property in Pennington, New Jersey. The other three buildings are high-quality, income-producing rental space.

William D. Brown William D. Brown Photovoltaic Research Center Photovoltaic Research Center Department of Electrical Engineering Department of Electrical Engineering University of Arkansas, Fayetteville University of Arkansas, Fayetteville Arkansas 72701 USA

Collaborators

Arkansas 72701 USA LARGE GRAIN POLYCRYSTALLINE AND EPITAXIAL SILICON FILMS FORMED AT LOW TEMPERATURES FOR SOLAR CELLS

Collaborators Marwan Barghouti, Hameed A. Naseem, Li Cai, Min Zou, Maruf Marwan Barghouti, Hameed A. Naseem, Li Cai, Min Zou, Maruf Hussain, Khalil Sharif, Hussain, Khalil Sharif, Husam H. Abu

Husam H. Abu-

• Safe,

Safe, Ram Kishore, Adnan Al

Ram Kishore, Adnan Al-

• Shariah, and Hengyu Wang

Shariah, and Hengyu Wang

23 23

24 24

Order of Presentation Order of Presentation

Thin Film PV Power Generation Thin Film PV Power Generation Powering the US with Solar Cells Powering the US with Solar Cells PV Production Growth PV Production Growth Metal Induced Crystallization Metal Induced Crystallization Experimental Experimental AIC Large Grain Growth AIC Large Grain Growth Epitaxial Growth Epitaxial Growth Results and Discussion Results and Discussion Summary and Conclusion Summary and Conclusion Acknowledgements Acknowledgements

Powering the US

nsumption for a ng 2.5 percent of this radiation

• Sunlight striking the earth for 40 minutes is

equivalent to global energy co year.

• 250,000 square miles of land in the Southwest

US are suitable for constructing solar power

• plants. This area is slightly larger than the

combined areas of Arizona and New Mexico.

• This area of land receives 4,500 quadrillion

British thermal units (Btu) of solar radiation per

• year. Converti

into electricity would match the nation’s total energy consumption in 2006.

25 25

Powering the US

Total cost to implement = $400 billion over Plan would require 14% efficiency and an Several methods of providing electricity : Is $1.00/watt installed still a

• the next 40 years.
• installation cost of $1.20 per watt of capacity.
• during non-electricity producing times have

been proposed. QUESTION realistic number considering that the cost of oil has increased by a factor of 5 since the $1.00/watt target was established.

Scientific American, page 63, January 2008

26 26

World PV Production

• PV production has been

doubling every 2 years since 2002 making it the fastest growing energy source.

• Existing grid-connected

solar PV capacity is 7.8 GW

27 27

PV Production by Selected Countries

China:

• tripled PV production in 2006
• doubled PV production in 2007
• market share in 2003 was 1%
• market share today is 18%
• 400 PV companies

28 28

29 29

Thin Film PV Production

Thin film production grew from 4 to 7% of the PV market from 2003 to 2007

PV Market Share

30 30

Market share of solar cell types sold during 2006.

(Source: Materials Today, Volume 10, Issue 11, page 21, November 2007)

PV Needs and Concerns

• World uses about 13 TW of pow

2050

• Conventional multicrystalline silicon solar cell modules of

today have an efficiency of about 12% and provide electricity at a cost of $0.27/kWh compared to today’s grid electricity cost of $0.06/kWh

• In addition to the solar cell cost, the installation costs are

also high . er – will rise to 30 TW by

• Any new solar cell must have an efficiency of at least 10

percent to be economically viable.

• Scalability is also an issue, as are reliability and lifetime

(Source: Photonics Spectra, page 70, November 2007)

31 31

EFFICIENCY (%) AREA (cm2 24.7 4.0 20.3 1.0 rystalline Si) 10.1 1.2 µc-Si/αSi:H 11.7 14.2

(Best to Date)

PV Cell Efficiencies

TYPE OF CELL ) Crystalline Si Multicrystalline Si Amorphous (and nanoc micro-morph cell

32 32

PV Cost and Projected Cost

33 33

Efficiency and cost projections for first- (I), second- (II), and third- generation (III) PV technologies (wafer-based, thin films, and advanced thin films, respectively)

• CURRENT = $2-3 PER WATT

(1ST GENERATION CELLS)

• BY 2009 = $1 PER WATT

(2ND GENERATION CELLS)

• BY 2010 = $0.70 PER WATT

(3RD GENERATION CELLS) - POSSIBLY TO 0.20 PER WATT EVENTUALLY

[Source: Materials Today, Volume 10, No. 11, page 42, November 2007].

PV Module Cost per Watt

34 34

35 35

Photovoltaic Power Generation Photovoltaic Power Generation

Photovoltaic Market Growth ~ 25%/y Photovoltaic Market Growth ~ 25%/y Production reached ~ 1.6 GW/y Production reached ~ 1.6 GW/y International PV Roadmap International PV Roadmap – – 100 GW/y by 2030 (10%) 100 GW/y by 2030 (10%) – – 50% from renewables by 2050 50% from renewables by 2050 – – 2/3 Solar (PV/thermal) by 2100 2/3 Solar (PV/thermal) by 2100 Methods for Success Methods for Success – – Module Cost Reduction Module Cost Reduction – – Availability of Silicon Availability of Silicon – – Higher Efficiency Higher Efficiency – – Increased Module Lifetime Increased Module Lifetime

36 36

Planned Solar Cell Planned Solar Cell Production Capacity by 2010 Production Capacity by 2010

Expected market Expected market 1000 MW 1000 MW Capacities Announced Capacities Announced 2200 MW 2200 MW Thin Film Share Thin Film Share 328 MW 328 MW Crystalline Share Crystalline Share 1872 MW 1872 MW

Thin Film Silicon Solar Cells Thin Film Silicon Solar Cells A Viable Option A Viable Option

C C-

• Si Solar Cells

Si Solar Cells

• cell processing; 40% module)

cell processing; 40% module) g for Increased Absorption g for Increased Absorption Substrate Cost is ~40% in Substrate Cost is ~40% in (20% (20% Thin Si Films on Low Cost Substrates Offer Thin Si Films on Low Cost Substrates Offer Great Potential Great Potential Hydrogenated Amorphous Silicon Thin Film Hydrogenated Amorphous Silicon Thin Film Technology is Mature Technology is Mature Development of Microcrystalline, Development of Microcrystalline, Polycrystalline and Epitaxial Silicon Polycrystalline and Epitaxial Silicon Light Trappin Light Trappin Surface Passivation for Low Recombination Surface Passivation for Low Recombination Velocity Velocity

37 37

Experimental Experimental

Hydrogenated Amorphous Silicon Hydrogenated Amorphous Silicon Deposited by Plasma Enhanced Chemical Deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) as well as rf Vapor Deposition (PECVD) as well as rf Magnetron Sputtering Magnetron Sputtering Aluminum Film Deposited by rf Magnetron Aluminum Film Deposited by rf Magnetron Sputtering Sputtering Annealing for Crystallization by Annealing for Crystallization by Conventional Furnace, Optical, and Laser Conventional Furnace, Optical, and Laser Beam Systems Beam Systems Characterization by XRD, SEM, TEM, HR Characterization by XRD, SEM, TEM, HR-

• TEM, AES, etc.

TEM, AES, etc.

38 38

U of A (Sputtering/PECVD) Cluster Tool U of A (Sputtering/PECVD) Cluster Tool

39 39

40 40

ITZ Robotic Arm MPZ5 Silicon Sputter Annealing Chamber MPZ1 MPZ2 MPZ4 MPZ3 Substrate Loading station a-Si:H/a-SiN:H PECVD Aluminum Sputter Doped a-Si:H PECVD

41 41

Large Grain Silicon Thin Films by Metal-Induced Crystallization

Large Grain Needed for Reducing EHP Large Grain Needed for Reducing EHP Recombination at the Grain Boundaries Recombination at the Grain Boundaries

Vs Glass Substrate Crystallized Si Glass Substrate

42 42

Fabrication Process

Glass

Aluminum

a-Si:H

Poly- Si

• xide

Annealing at < 450 C/ 20 min

Results (cont..) Results (cont..)

SEM Images

43 43

44 44

Grain Size Control Grain Size Control

Amorphous Si microstructure can Amorphous Si microstructure can influence grain size of crystallized influence grain size of crystallized

• silicon. Hydrogen and doping can
• silicon. Hydrogen and doping can

also influence grain size and also influence grain size and crystallization rates. crystallization rates. Introducing an interface layer (of Introducing an interface layer (of silcon oxide, aluminum oxide, or silcon oxide, aluminum oxide, or even other types of layers) can even other types of layers) can influence grain size influence grain size

Results Results

SEM image of a ‘zero minute

• xide layer) crystallized at 400

etched away from the sample. SEM Image ’ sample (no °C. Al has been

45 45

Results (cont.)

Oxide SEM Images

Results (cont.)

No oxide

46 46

Results (cont..) Results (cont..)

AFM Images No oxide Oxide

47 47

XRD Results

26 28 30 32 34 36 38 200 400 600 800 Aluminum Silicon (111) CPS(arb.) 2θ (

0)

a acuum , Curve II is a 10 minute ambient , and Curve two days (two- . Oxide layer allization XRD spectra of three

• samples. Curve I is for

sample kept in v (zero-minute ambient exposure time)

(111)

sample kept outside for minutes (10-

48 48

40 42 III II I

exposure time) III is for one kept in the ambient for day ambient exposure time) The curves are shifted vertically to compare the peak heights. increases cryst temperature.

Nano Nano-

• Aluminum

Aluminum-

• Induced

Induced Crystallization Crystallization

Substrate was oxide coated silicon wafer Substrate was oxide coated silicon wafer PECVD a PECVD a-

• Si thickness was 100 nm

Si thickness was 100 nm Aluminum thickness was 40 nm Aluminum thickness was 40 nm Annealing temperature: 300 Annealing temperature: 300-

• 450

450˚ ˚C C Annealing temperature ramp Annealing temperature ramp-

• up time

up time was varied to influence nucleation was varied to influence nucleation density density Excess aluminum was removed by Excess aluminum was removed by etching etching

49 49

Nano-Aluminum-

aled for 10 20 30 40 50 60 300 Largest Grain Size (µm) Anne 30 minutes 350 400 450 Annealing Temperature (oC)

Induced Crystallization

Crystallite size versus annealing temperature

50 50

Nano-Aluminum-Induced Crystallization

5 10 15 Annealing Ramp Up Time (Hour) nano-AIC traditional AIC A B 30 60 90 120 Grain Size (um) 20

51 51

Relationship between grain size and ramp up time of annealing

• temperature. It shows that grain size significantly increased with

ramp up time for nano-AIC of a-Si:H, but changes little for traditional AIC of a-Si:H.

Nano-Aluminum-Induced Crystallization

50 µm

Microscopy image of sample annealed at 300oC for 30 minutes

52 52

Nano-Aluminum-Induced Crystallization

53 53

20 µm

ages of the grains on the samples with 20 hour p time. The largest grain size is about 93 mm Microscopy im annealing ram .

a-S 200 nm Al 30 nm Al Si (220) Si (311) 300 600 900 Intensity (arbitrary unit) Si (111) i:H 25 35 45 55 65 75 2θ (degree)

XRD spectra of (a) a-Si:H, (b) nano-AIC of a-Si:H, and (c) traditional AIC of a-Si:H. The large peaks around 2θ=28.5 degree are Si (111), indicating crystallization occurred for both (b) and (c).

Nano-Aluminum-Induced Crystallization

54 54

aphy of

• other

b

55 55

3-D SPM images showing the surface topogr (a) a-Si:H; and polycrystalline silicon films produced by (b) nano-AIC, and (c) traditional AIC. It shows that nano-AIC creates much sm

a

surfaces than traditional AIC.

c

Nano-Aluminum-Induced Crystallization

Area in micrograph is 1.275 mm wide by 0.95 mm high. Crystallite size varies from 0.1 to 1.0 mm.

56 56

57 57

University of Arkansas Patented University of Arkansas Patented Solar Cell Process Using MIC Solar Cell Process Using MIC

HF Clean Thin SX or MC Si HF Clean Thin SX or MC Si Deposit a Deposit a-

• Si:H on Front by

Si:H on Front by PECVD/Sputtering PECVD/Sputtering Deposit n Deposit n+

+(5% P) doped

(5% P) doped a a-

• Si:H on Back

Si:H on Back Deposit Al on Front and Deposit Al on Front and Back Back Anneal to Crystallize and Anneal to Crystallize and Texture (200 Texture (200-

• 300

300° °C) C)

Thin N-Type X-Si Thin N-Type X-Si Thin N-Type X-Si Thin N-Type X-Si Thin N-Type X-Si Thin N-Type X-Si

Etch Grid and Deposit AR Etch Grid and Deposit AR

58 58

Comparison of Standard Vs U of A Comparison of Standard Vs U of A Technologies Technologies

at 1000°C High Temp Labor Intensive Sputt/PECVD a-Si:H Backside n+ a-Si:H Sputter Al Phosph Diff Process Start with P-Type X-Si Standard Technology Start with N-Type X-Si Anneal 200-300°C a-SiN:H AR Coating New Patented Tech Batch Back and Side Lapping Screen Printing Contacts Sintering at >600°C Bowing AR Coating High

• Sur. Rec.

Silicon Thin Film Solar Cell Silicon Thin Film Solar Cell

With Corrugated Substrate for Efficient With Corrugated Substrate for Efficient Light Trapping Light Trapping p p-

• i

i-

• n Type Solar Cell

n Type Solar Cell Light Ray Traverses hundreds of microns Light Ray Traverses hundreds of microns laterally though Multiple Internal laterally though Multiple Internal Reflection Reflection

Thin Film Solar Cell on Low Cost Glass or Plastic Substrate

59 59

60 60

Growth of Epitaxial silicon

Aluminum a-Si:H Aluminum Epitaxial Si active layer

Anneal at 500°C

Metallurgical Grade (100) Crystalline Si

SEM Image

b No c Protrusions

Si film. The image scale is

a rystallization

SEM image of the 300 nm thick at: a) 20 µm b) 2 µm. Annealed at 525ºC for 60 minutes

61 61

High Resolution X-Sectional TEM

Substrate Epitaxial film

interface a

The interface between the epitaxial film and the (100) silicon substrate

62 62

High Resolution X-Sectional TEM

b

The center of the epitaxial film

63 63

High Resolution X-Sectional TEM

64 64

c

Epitaxial film

the epitaxial silicon film and the aluminum film showing the epitaxial crystal planes of the film The interface between

Al film

thickness. through its entire

Auger Depth Profiles

65 65

Profile Time=0 Profile - Time=10min 120 (b)

20 40 60 80 Atomic % 100 120 200 400 600 800 1000 1200 1400 Depth (nm) C O Al Si

(a) Depth (nm)

20 40 60 80 Atomic % 200 400 600 800 1000 1200 1400 Depth (nm)

O Al

Atomic % Depth (nm)

Profile - Time=15min 20 40 60 80 100 120 200 400 600 800 1000 1200 1400 Depth (nm) Atomic %

O Al Si

(c)

Profile - Time=30min

20 40 60 80 100 120 200 400 600 800 1000 1200 1400 Depth (nm) Atomic %

O Al Si

(d) Atomic %

100

Si

Aluminum Induced Aluminum Induced Crystallization of a Crystallization of a-

• Si:H

Si:H

66 66

a a-

• Si:H crystallized to continuous poly

Si:H crystallized to continuous poly-

• Si

Si films at 150 films at 150-

• 300

300° °C; Grain Size ~ 0.5 C; Grain Size ~ 0.5 µ µm m Grain Size Achieved ~ 20 Grain Size Achieved ~ 20-

• 30

30 µ µm at 300 m at 300-

• 450

450° °C using a 1 C using a 1-

• 3 nm oxide barrier layer

3 nm oxide barrier layer Epitaxial Si film is produced on (100) SX Epitaxial Si film is produced on (100) SX-

• Si at 400

Si at 400-

• 550

550° °C C

Anneal 300-450°C Anneal 150-300°C Anneal 450-550°C

67 67

Summary and Conclusions Summary and Conclusions

Energy Needs of the World are Increasing Energy Needs of the World are Increasing Exponentially Exponentially Sustainable Energy Strongly Suggest Solar Sustainable Energy Strongly Suggest Solar Energy to Dominate by 2100 Energy to Dominate by 2100 Silicon is the Material of Choice in Solar PV Silicon is the Material of Choice in Solar PV Thin silicon Solar Cells, Low Temperature Thin silicon Solar Cells, Low Temperature In In-

• Line Fabrication, Low Cost Substrates

Line Fabrication, Low Cost Substrates Low Temperature Crystallization of a Low Temperature Crystallization of a-

• Si:H

Si:H has Great Potential has Great Potential Large Grain Poly Large Grain Poly-

• Si and Epitaxial Si at Low

Si and Epitaxial Si at Low Temperatures have been Demonstrated Temperatures have been Demonstrated

68 68

Acknowledgement Acknowledgement

We acknowledge the financial support of the We acknowledge the financial support of the following agencies: following agencies:

– – NASA (HQ)/Arkansas EPSCoR NASA (HQ)/Arkansas EPSCoR – – NASA Goddard/Arkansas Space and Planetary NASA Goddard/Arkansas Space and Planetary Center Center – – DOE/Arkansas EPSCoR DOE/Arkansas EPSCoR – – National Renewable Energy Lab (NREL) National Renewable Energy Lab (NREL) – – Oak Ridge National Lab (ORNL) Oak Ridge National Lab (ORNL) – – Southern Universities Research Association Southern Universities Research Association (SURA) (SURA) – – National Center for Electron Microscopy (NCEM) National Center for Electron Microscopy (NCEM) – – NSF (USA)/DST (INDIA) NSF (USA)/DST (INDIA) – – Fulbright Institute Fulbright Institute