Tests and performance of multi-pixel Geiger mode APD's and APD's for - - PowerPoint PPT Presentation

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Tests and performance of multi-pixel Geiger mode APD's and APD's for - - PowerPoint PPT Presentation

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Tests and performance of multi-pixel Geiger mode APD's and APD's for the CMS ECAL Y. Musienko, INR (Moscow)/Northeastern University (Boston) PD07 Workshop, Kobe, June 28, 2007 Y. Musienko Motivation At Beaune-05 NDIP conference several

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SLIDE 1

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Tests and performance of multi-pixel Geiger mode APD's and APD's for the CMS ECAL

  • Y. Musienko,

INR (Moscow)/Northeastern University (Boston)

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SLIDE 2

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Motivation

  • At Beaune-05 NDIP conference several groups reported about

development of multi-pixel Geiger-mode APDs (G-APDs)

  • The G-APD parameters (gain, PDE, excess noise factor, timing

response) were reported to be similar or even superior to the parameters

  • f PMTs
  • During last 2 years new G-APD structures have been developed.

Improved performances of these photosensors were reported by different investigators

  • These results increased an interest to G-APDs from HEP, astroparticle

and medical communities

  • Correct evaluation of the G-APDs parameters and their influence on

detector performance became very important

  • However measurements of these parameters (especially QE) is not an

easy task taking into account small sensitive area (typically 1 mm2) and rather high dark count rates at room temperature.

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PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Outline

In my talk:

  • I will briefly describe the experimental technique we use to

characterize G-APDs

  • The results of our studies of recently developed G-APDs from 3

producers will be reported:

  • PDE(U)
  • F(U)
  • Ndark(U)
  • Gain(U)
  • KV(U)
  • KT(U)
  • PDE(λ)
  • Main parameters of the G-APDs will be compared with the parameters
  • f an APD operated in linear mode (S8148 HPK APD)
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SLIDE 4

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

G-APDs studied

G-APDs Producer's reference Package Protection Substrate Area [mm2] # of pixels VB(T=22 C) [V] CPTA/Photonique* SSPM_0701BG_PCB PCB No p-type 1 556 30.7 Dubna/Mikron** pMP-3d-11 TO-18 Epoxy p-type 1 1024 39.4 Hamamatsu*** S10362-11-050C Ceramic Epoxy n-type 1 400 68.8

*) http//www.photonique.ch **) http//sunhe.jinr.ru/struct/neeo/apd/ ***) http//www.hamamatsu.com

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SLIDE 5

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Set-up

  • MPGM APD and XP2020 PMT were illuminated with the parallel light

from LED through 0.5 mm diameter collimator

  • Mechanical system allowed precise positioning (<50 mm) of the APD

and PMT in all 3 dimensions

  • LEDs with the peak emission of 410 nm and 515 nm were used in

this study

  • APD was connected to fast linear transimpedance amplifier (gain~20)
  • Temperature - monitored using Pt-100 resistor
  • Currents were measured using Kethley-487 source-meter
  • Amplitude spectra were measured using LeCroy 2249 W CAMAC

ADC

  • LeCroy 623B discriminator and 250 MHz scaler were used for signal

counting

  • “Optometrics” spectrophotometer was used for spectral response

measurements

  • Low temperature measurements were done inside the freezer
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SLIDE 6

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

LED spectrum (low light)

MPGM APDs have very good pixel-to-pixel signal uniformity. Pedestal is separated from the signal produced by single fired pixel Q1 .

CPTA APD (U=37 V, T=22 C)

2000 4000 6000 8000 10000 12000 100 150 200 250 300 350 400

ADC channels Counts

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SLIDE 7

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Single electron spectrum

When V-Vb>>1 V typical single pixel signal resolution is better than 10% (FWHM)). However photons produced during the pixel breakdown can penetrate another pixel and fire it. As a result more than one pixel is fired by single photoelectron.

SES CPTA APD, U=42 V, T=-28 C

1 10 100 1000 10000 200 300 400 500 600 700

ADC ch. C o u n ts

SES MEPhI/PULSAR APD, U=57.5V, T=-28 C

1 10 100 1000 10000 100 200 300 400 500

ADC ch. Counts

(Y. Musienko et al., A 567 (2006) pp.57–61)

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SLIDE 8

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Parameter definition: Gain

Each pixel works as a digital device – 1,2,3... photons produce the same signal Q1=Cpixel*(V-Vb) (or Single Pixel Charge). Multi-pixel structure works as a linear device, as soon as Npe=Ng*QE<<N0 , N0 – is a total number of pixels/device Measured charge : Qoutput=Npe*Gain , It was found by many groups that : Gain ≠ Q1 , More than 1 pixel is fired by one primary photoelectron! Gain=Q1*np , where np is average number of pixels fired by one primary photoelectron.

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SLIDE 9

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

PDE measurements

Photon detection efficiency (PDE) is the probability to detect single photon when threshold is <Q1. It depends on the pixel active area quantum efficiency (QE), geometric factor and probability of primary photoelectron to trigger the pixel breakdown Pb (depends on the V-Vb !!, Vb – is a breakdown voltage) : PDE = QE*Gf*Pb For G-APDs with low dark count rate (<3 MHz) pedestal events can be easily separated from the event when one or more than one pixel were fired by the incident

  • photons. In this case we can use well known property of the Poisson distribution :

<Npe> = - ln(P(0)) This equation works even in the case of the photodetector with very high multiplication noise !!! (“Peak” counting method overestimates the <Npe>. Method which uses the width of the signal distribution underestimates the <Npe>). Number of incoming photons (Nγ) from LED pulse can measured with calibrated PMT (XP2020 PMT, for example). Then: PDE(λ) = Npe/Nγ LED emission spectra must be measured as well (in pulsed mode !!!)

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SLIDE 10

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Dark current vs. Bias (T=22 C)

CPTA APD

1 2 3 4 5 6 7 8 30 32 34 36 38 40 42 44

Bias [V] Dark Current [μA]

Dubna/Mikron APD (pMP-3d-11) 0.5 1 1.5 2 2.5 40 41 42 43 44 45 46 47

Bias [V] Dark Current [μA] S10362-11-050C HPK MPPC

0.05 0.1 0.15 0.2 0.25 68 68.5 69 69.5 70 70.5 71

Bias [V] Dark Current [μA]

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SLIDE 11

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Dark count vs. Bias (~0.5 p.e. threshold, T=22 C)

CPTA APD

500 1000 1500 2000 2500 3000 3500 4000 4500 30 32 34 36 38 40 42 44

Bias [V] Dark Count [kHz]

Dubna/Mikron APD (pMP-3d-11) 1000 2000 3000 4000 5000 6000 40 41 42 43 44 45 46 47

Bias [V] Dark Count [kHz] S10362-11-050C HPK MPPC

100 200 300 400 500 600 700 800 68 68.5 69 69.5 70 70.5 71

Bias [V] Dark Count [kHz]

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SLIDE 12

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Signal shape (HPK and Dubna G-APD)

Hamamatsu G-APD Dubna/Mikron G-APD

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SLIDE 13

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Signal shape (CPTA G-APD)

Direct signal (RL=50 Ohm) After tail cancelation using C=0.47 nF (RL=50 Ohm)

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SLIDE 14

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Photon detection efficiency vs. Bias

CPTA APD

5 10 15 20 25 30 35 40 30 32 34 36 38 40 42 44

Bias [V] PDE(515 nm) [%]

Dubna/Mikron APD (pMP-3d-11) 2 4 6 8 10 12 14 16 40 41 42 43 44 45 46 47

Bias [V] PDE(515 nm) [%] S10362-11-050C HPK MPPC

5 10 15 20 25 30 35 68 68.5 69 69.5 70 70.5 71

Bias [V] PDE(515 nm) [%]

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SLIDE 15

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Gain vs. Bias (T=22 C)

CPTA APD

0.2 0.4 0.6 0.8 1 1.2 30 32 34 36 38 40 42 44

Bias [V] Gain, 106

Dubna/Mikron APD (pMP-3d-11) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 40 41 42 43 44 45 46 47

Bias [V] Gain, 106 S10362-11-050C HPK MPPC

0.5 1 1.5 2 2.5 68 68.5 69 69.5 70 70.5 71

Bias [V] Gain, 106

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SLIDE 16

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

G-APD voltage coefficient

CPTA APD

5 10 15 20 25 30 35 40 45 34 35 36 37 38 39 40 41 42 43 Bias [V] 1/A*dA/dV [%] Dubna/Mikron APD (pMP-3d-11) 20 40 60 80 100 120 39 40 41 42 43 44 45 46 47 Bias [V] 1/A*dA/dV [%]

S10362-11-050C HPK MPPC

50 100 150 200 250 300 350 69 69.2 69.4 69.6 69.8 70 70.2 70.4 70.6 Bias [V] 1/A*dA/dV [%]

kV= dA/dV* 1/A, [% /V]

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SLIDE 17

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Temperature sensitivity

CPTA APD 50 100 150 200 250 300 350 400 30 32 34 36 38 40 42 44

Bias [V] Signal amplitude [ADC ch.]

T=-25 C T= 22 C

Dubna/Mikron APD

20 40 60 80 100 120 140 30 32 34 36 38 40 42 44 46 48

Bias [V] Amplitude [ADC ch.]

T=-25 C T= 22 C Hamamatsu MPPC 20 40 60 80 100 120 140 160 180 200 66.5 67 67.5 68 68.5 69 69.5 70 70.5 71 Bias [V] Amplitude [ADC ch.]

T=-25 C T= 22 C

LED signal was measured in dependence on bias at 2 temperatures. During low temperature measurements (T=-25 C) G-APDs were placed inside commercial freezer (LED was kept at room temperature)

CPTA/Photnique: dVB/dT=-20 mV/C Dubna/Micron: dVB/dT=-122 mV/C Hamamatsu: dVB/dT=-50 mV/C

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SLIDE 18

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

G-APD temperature coefficient

CPTA APD

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 34 35 36 37 38 39 40 41 42 43 Bias [V]

  • 1/A*dA/dT [%]

Dubna/Mikron APD (pMP-3d-11) 2 4 6 8 10 12 14 16 39 40 41 42 43 44 45 46 47 Bias [V]

  • 1/A*dA/dT [%]

S10362-11-050C HPK MPPC

2 4 6 8 10 12 14 16 69 69.2 69.4 69.6 69.8 70 70.2 70.4 70.6 Bias [V]

  • 1/A*dA/dT [%]

kT= dA/dT* 1/A, [% /°C]

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SLIDE 19

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Excess noise factor (I)

Excess noise factor can be measured from the width of single electron spectra and calculated using: F=1+var1/<A1>2 (2), where <A1> is average amplitude produced by single electron and var1 its variance. Another way (gives the same result) is to compare the Npe calculated from equation (1) and from Nw from the width of the measured spectra (number of measured photoelectrons should be small (P(0) should not be very low) . This method is easier to use: F=Npe/Nw (3),

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SLIDE 20

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Excess noise factor (II)

CPTA APD

0.9 0.95 1 1.05 1.1 1.15 1.2 30 32 34 36 38 40 42 44 Bias [V] F Dubna/Mikron APD (pMP-3d-11) 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 40 41 42 43 44 45 46 47 Bias [V] F

S10362-11-050C HPK MPPC

0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 68 68.5 69 69.5 70 70.5 71 Bias [V] F

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SLIDE 21

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

G-APDs spectral response (I)

For the spectral response measurements “Optometrics” SDMC1-03 spectrophotometer was used. We also used a calibrated PIN photodiode as a reference. Spectrophotometer light intensity was significantly reduced using gray filters to the level when the maximum current measured with the APD was

  • nly ~30% higher than its dark current. This was done to avoid

the non-linearity effects caused by high pixel illumination. Photocurrent measured with the APD was compared with the photocurrent measured with the PIN photodiode. In addition the measurements with the LED pulsed light were used for absolute spectral response calibration (at least 2 different LED measurements were done for each APD).

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SLIDE 22

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

G-APDs spectral response (II)

T=22 C

10 20 30 40 50 60 350 400 450 500 550 600 650 700 750 800

Wavelength [nm] PDE [%]

CPTA/Photonique APD HPK S10362-11-050C Dubna/Mikron APD

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SLIDE 23

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

S8148 HPK APD developed for the CMS experiment

20

window e conversion γ e drift π (i) e acceleration e multiplication n E

  • p

p n ++ ++ collection

  • Si N
3 4
  • The CMS electromagnetic calorimeter was built with PbWO4 crystals.

61,200 barrel crystals to read out. Two APD’s per crystal mounted in capsules Schematic structure of APD Capsule with 2 APD’s

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SLIDE 24

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

S8148 performances (I)

0.1 1 10 100 1000 10000 50 100 150 200 250 300 350 400 450

Voltage [V] Gain

10 20 30 40 50 60 70 80 90 100 300 400 500 600 700 800 900 1000

Wavelength [nm] Quantum Efficiency [%]

  • K. Deiters et al.,

NIM, A461 (2001) 574

Active Area 5x5 mm2 Operating Voltage @ M=50 ~380 V Capacitance @ M=50 80 pF Serial Resistance < 10 Ω Dark Current @ M=50 < 10 nA Excess Noise Factor @ M=50 2.1 Quantum Efficiency @ 420 nm 73 % dM/dV x 1/M @ M=50 3.1 % dM/dT x 1/M @ M=50

  • 2.4 %

Summary of APD parameters

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SLIDE 25

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

S8148 performances (II)

10 20 30 40 50 60 500 1000 1500 2000

Gain 1/M*dM/dV [%]

10 20 30 40 50 60 350 400 450 500 550 600 650 700 750 800

Wavelength [nm] Gain

  • 30
  • 25
  • 20
  • 15
  • 10
  • 5

500 1000 1500 2000

Gain 1/M*dM/dT [%]

1 3 5 7 9 11 13 15

500 1000 1500 2000

Gain Excess Noise Factor

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SLIDE 26

PD07 Workshop, Kobe, June 28, 2007

  • Y. Musienko

Summary

  • Recently developed G-APDs from 3 producers were studied

in CERN APD Lab using technique developed by our group

  • Such G-APD parameters as photon detection efficiency,

excess noise factor, dark count, gain, voltage coefficient of the gain, temperature coefficient of the gain and their dependence on the bias voltage were measured for 3 G- APDs at room temperature

  • Dependences of the G-APDs PDEs on the wavelength of

light were also measured

  • Main parameters of the S8148 HPK APD operated in linear

mode were presented and compared with the parameters of the G-APDs