SiP Technology and Testing
Name: Philippe Cauvet Date: 2007, March 28
SiP Technology and Testing Name: Philippe Cauvet Date: 2007, March - - PowerPoint PPT Presentation
SiP Technology and Testing Name: Philippe Cauvet Date: 2007, March 28 Outline Definition Market / Applications Design and technology Packaging Technologies Test Challenges Conclusion 2 Journe EEA Montpellier Philippe
Name: Philippe Cauvet Date: 2007, March 28
Philippe Cauvet, Mar 28, 2007
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SiP Market Projection
2 000 4 000 6 000 8 000 10 000 12 000 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Mu Shipment 2 000 4 000 6 000 8 000 10 000 12 000 Automotive Communications Consumer Data Processing Industrial Source: Gartner 1Q06
Gartner updates every quarter its SiP Market Projection
Gartner view slightly increased since 3Q04 with 10% CAGR 04-09 compared to 5% CAGR 04-09 for Semiconductors: SiP and SoC grow in parallel! Gartner sees as much SiP in Consumer as Communication Why a slowdown ? Missing CAD tools certainly an obstacle
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Tuner MPEG2
Video & Audio
Decoder Channel Tuner MPEG2
Video & Audio
Decoder Channel
(drawing not to scale)
BGA292 Pics die 268 wires 64.4 mm²
9.43 mm 6.83 mm
MOJO die PNX8316 292 bumps 20.4mm² - 1W
Channel die TDA10086 72 bumps 7.4mm² - 0.76W
Tuner die TDA8262 50 bumps 4.9mm² - 0.58W
MPEG2 A/V decoder Channel decoder Silicon Tuner
(drawing not to scale)
BGA292 Pics die 268 wires 64.4 mm²
9.43 mm 6.83 mm
MOJO die PNX8316 292 bumps 20.4mm² - 1W
Channel die TDA10086 72 bumps 7.4mm² - 0.76W
Tuner die TDA8262 50 bumps 4.9mm² - 0.58W
(drawing not to scale)
BGA292 Pics die 268 wires 64.4 mm²
9.43 mm 6.83 mm
MOJO die PNX8316 292 bumps 20.4mm² - 1W
Channel die TDA10086 72 bumps 7.4mm² - 0.76W
Tuner die TDA8262 50 bumps 4.9mm² - 0.58W
MPEG2 A/V decoder Channel decoder Silicon Tuner MPEG2 A/V decoder Channel decoder Silicon Tuner MPEG2 A/V decoder Channel decoder Silicon Tuner
One board PCB 2 layers
Smart Card(s) 16Mb SDRAM Audio DAC EEPROM 16Kb 4Mb FLASH UARTs
16 CINCH Right CINCH Left Analogue video SVHS CVBS RF input ISO7816 16 I²C
One package STB sbSIP + technology
I²S
Front panel Bi-colour LED and IrDA Receiver
One board PCB 2 layers
Smart Card(s) 16Mb SDRAM Audio DAC EEPROM 16Kb 4Mb FLASH UARTs
16 CINCH Right CINCH Left Analogue video SVHS CVBS RF input ISO7816 16 I²C
One package STB sbSIP + technology
I²S
Front panel Bi-colour LED and IrDA Receiver
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Technical Mix Performance / Speed Production Volume Time to Market
Short Long Low High Low High Complex Simple
Favor the use
Favor the use
Consider Factors Carefully. Consider Factors Carefully.
Factors to Consider: Production Volume Design Environment Dev Cost (Incl. IP Cost) Reliability Die Maturity Technologies (RF, Memories…)
Source: Gartner 2006 Contibutor: JM Yannou, NXP SiP Innovation Manager
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TV: up to 862MHz GSM: from 890MHz on TV: up to 862MHz GSM: from 890MHz on
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Source: STATSChippac
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Source: DPC
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Package-on-Package construction (folded flex circuit from Tessera)
– Processor, flash & SDRAM
Prototype of 8-dies stack with no interposer (50µm die thickness) Intel is now using copper pillar bumping for its processors
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Package-on-Package (folded carrier)
– 2 metal-layer polymide providing electrical and mechanical properties for interconnect
Processor with associated memory
Carrier R L (Q) C Interconnectivity
Flex no 60 no 14 lines/mm Si/GaAs no ? 0,11nF/mm² ?
Sources : Prismark wireless technology report – March 2005 Folded Stacked CSP assembly process Tessera/Intel folded stacked CSP package Configuration examples
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– 11.2x9mm – 9 SMDs 0402 – 18 SMDs 0201 – 2.8x2.6mm 0.13µm CMOS – 2.7x2.9mm 0.18µm RFCMOS – 1.1x1.1mm IPD device
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? Known Partnerships Sampling? Availability 12x12 I/O 9x9 Size (mm)
Source : Sychip
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Inductance / 4 to 6!
lead tip lead tip Active die
Passive die
Molding compound
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LiTaO3 LiTaO3
Assembly enabling an electrical contact and sealing Assembly: Thermo-compression Polymer pattern on PICS PICS substrate LiTaO3 substrate SAW filter Cavity Assembly enabling an electrical contact and sealing Assembly enabling an electrical contact and sealing Assembly: Thermo-compression Assembly: Thermo-compression Polymer pattern on PICS PICS substrate LiTaO3 substrate SAW filter Cavity Polymer pattern on PICS PICS substrate LiTaO3 substrate SAW filter Cavity
PICS substrate SAW filter Gold stud-bump Polymer seal ring
1mm 1mm
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Targeted applications
– Toys, medicals, phones, anti-theft
4.3x4.0x0.4mm MEMS die 3.9x4.0x0.4mm cap die 3x2.8x0.2mm logic die QFN 28 I/O, 2 stacked die Die to die and die-leadframe wirebonds
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Chip A Chip B Chip C
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Fab of X & PCM Test Fab of B Fab of A & PCM Test SiP Packaging. Die X Wafer Test Die B Die A Wafer Test SiP Final Test
Fab of X & PCM Test Fab of B Fab of A & PCM Test SiP Packaging. Die X Wafer Test Die B Die A Wafer Test Die X Wafer Test Die B Die A Wafer Test SiP Final Test
Passive Substrate
Analog/RF
Digital or Mixed-mode
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Contact bumps Membrane Microstrip transmission line Ground plane
Carrier PCB Membrane Forced-delivery mechanism Contact bumps Terminations and bypasses Carrier PCB Membrane Forced-delivery mechanism Contact bumps Terminations and bypasses
Thin film, Μ r 25um
Thin film, Μ r 25um
Thin film, Μ r 25um
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bumps
contact pads
nm
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IDD R
L = 1 n H CLKI N VOS C CLKOU T (Reference Clock Signal) Package
CLPF RLP
F
(VDD Test Pattern)
DUT
VCLK
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Which leads SiP package test to: Require greater diversity of ATE resources than SoC Require greater diversity of test & reliability screen methods than SoC Have large disparities in test times and resource utilization among die Solutions: Insert in multiple testers Better scheduling of test resources to allow independent, simultaneous test
BIST / DfT / DSP
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Philips: DigRF interface advantage vs disadvantage Philips: DigRF interface advantage vs disadvantage
Data bits
TX RX
D A D A LNA PA AGC Buf DSP core
TX-FEM Transceiver Baseband
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Philips: DigRF interface advantage vs disadvantage Philips: DigRF interface advantage vs disadvantage
Data bits
TX RX
D A D A LNA PA AGC Buf DSP core
TX-FEM Transceiver Baseband
Ref: “Seamless test of Digital Components in M/S paths”, S. Ozev et al
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Philips: DigRF interface advantage vs disadvantage Philips: DigRF interface advantage vs disadvantage
Data bits
TX RX
D A D A LNA PA AGC Buf DSP core
TX-FEM Transceiver Baseband
Ref: “Wafer level RF Test and DfT for VCO Modulating Transceiver Architectures”, S. Ozev et al
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LO
ADC1 DAC1
HPA LNA
BPF BPF BPF VGA ADC N ADC M
Mixed Signal Die Transceiver : RF Die Auxiliary function Auxiliary function
LO
ADC1 DAC1
HPA LNA
BPF BPF BPF VGA ADC N ADC M
Mixed Signal Die Transceiver : RF Die Auxiliary function Auxiliary function
Loop-back: Analog Design For Test issue
Test methods: digital post processing
ADCs DACs test Compensate data converters errors improve their performances
Test each block through other blocks
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1. Find DSP-based methods / algorithms to re-use the analog/ms blocks as instruments 2. Implement hardware that supports the methods
DAC3 ADC4 DAC1 DAC4 ADC3 ADC1 ADC2 RF Part Digital part 2 Analog Part 1 Analog Part 2 Analog Part 1 Digital part 3 Digital part 4 Digital part 1
ANC
DAC3 ADC4 DAC1 DAC4 ADC3 ADC1 ADC1 ADC2 RF Part Digital part 2 Analog Part 1 Analog Part 2 Analog Part 1 Digital part 3 Digital part 4 Digital part 1
ANC ANC
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Philips: DigRF interface advantage vs disadvantage Philips: DigRF interface advantage vs disadvantage
Data
TX RX
D A D A LNA PA AGC Buf DSP core
TX-FEM Transceiver Baseband
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Transmitter/ Receiver
Test Control Block
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Le Mastère Spécialisé « Microelectronics System Design & Technology » forme des spécialistes de la conception de systèmes micro-électroniques & micro-technologiques The specialized Master in « Microelectronics System Design & Technology » trains specialists in micro-electronic and micro- technological systems design
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Advanced Processes 60h Coupling Effects 60h Advanced Tests 80h SiP Design Methodologies 80h Manufacturing 40h Business Management 40h SoC Design Methodologies 60h Introduction 20h