Review of muSR studies for SRF applications
Tobias Junginger
Review of muSR studies for SRF applications Tobias Junginger - - PowerPoint PPT Presentation
Review of muSR studies for SRF applications Tobias Junginger Acknowledgement Experimentalists: D. Bazyl, R. Dastley, M. Dehn, D. Azzoni Gravel, S. Gehdi, Z. He, R. Kiefl, P. Kolb, R. Laxdal, Y. Ma, D. Storey, E. Thoeng, W. Wasserman, L.
Tobias Junginger
Experimentalists: D. Bazyl, R. Dastley, M. Dehn, D. Azzoni
Gravel, S. Gehdi, Z. He, R. Kiefl, P. Kolb, R. Laxdal,
Storey, E. Thoeng, W. Wasserman, L. Yang, Z. Yao, H. Zhang (TRIUMF)
Support from
Triumf Centre for Molecular & Materials Science: D. Arseneau, B. Hitti, G. Morris, D. Vyas (TRIUMF)
Support at PSI: A. Suter (PSI) Sample Providers: D. Hall, M. Liepe, S. Posen (Cornell), A.
Valente-Felenciano (JLAB), T. Tan, W. Withanage, M. Wolak,
(CERN)
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Affiliations as of time of collaboration
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Summary: muSR is a technique that allows to measure localized magnetic fields. Using this technique we show:
consistent with Hc1 to a field consistent with Hsh.
be considered
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1.
Introduction to muSR
2.
Using muSR as a local magnetometer (TRIUMF)
1.
Inducing superheating in niobium by thin film coating
3.
Low Energy muSR (PSI)
1.
Proximity effects in NbTiN/Nb and NbTiN/AlN/Nb samples
2.
Magnetic Impurities in Nb/Cu films
4.
Summary
5.
Outlook
1.
BetaNMR
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~500 MeV Positive muons are produced with 100% spin polarization
Muons are 100% spin polarized with kinetic energy of 4.1MeV u
Muons are deposited ~100micron deep in a sample (bulk probe) – spin precesses with frequency dependent on local magnetic field Muon decays in 1/2=2.2µsec - emits a positron preferentially along the µ+ spin direction
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aligned with the muon spin
correlated with time of arrival
signals gives a measure of the local field in the sample
Left detector Right detector
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Non-magnetic with magnetic impurities
Uniformly weakly magnetic Static distribution of random fields
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Meissner state Intermediate state Vortex state Normal state
are taken as a function of applied magnetic field
volume fraction sampled by the muons that does not contain magnetic field
0.2 0.4 0.6 0.8 1 1.2 50 100 150 200 Relative asymmetry B (mT)
and sample geometries have been characterized in this way
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0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 2.5 Normalized Asymmetry H/Ho
Nb 800C at 2K
Transverse Coin Parallel Coin* Ellipsoid
a) Transverse coin samples are sensitive to pinning - delays flux break in to the centre b) Parallel coin geometry is insensitive to pinning c) Ellipsoid samples are less sensitive
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0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 2.5 Normalized Asymmetry H/Ho
Nb 800C at 2K
Transverse Coin Parallel Coin* Ellipsoid
Stronger pinning 800C baked samples – pinning is clearly seen in different Hentry between transverse, parallel coin and ellipsoid geometry
0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 2.5 Normalized asymmetry H/Ho
Nb 1400C at 2K
Transverse Coin Parallel Coin Ellipsoid
Weak pinning 1400C heat treatment for three geometries
Effect of pinning
entry
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to the center at 0.91 Hentry. Only the field in the center is probed
niobium we measure the higher Hc1 or Hsh
Muons Muons are implanted 100 μm deep in the bulk Coatings are between 50nm and 3.5µm
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0.2 0.4 0.6 0.8 1 1.2 50 100 150 200 250
Normalized Asymmetry Bapplied (mT)
Nb3Sn on Nb Ellipsoid
2K 5K 7K 11K 14K 17K
y = -0.9987x + 0.9988 R² = 0.9663 y = -0.9986x + 0.9974 R² = 0.9813
0.2 0.4 0.6 0.8 1 1.2 0.2 0.4 0.6 0.8 1 1.2
Hnuc(T)/Hnuc(0) (T/Tc)2 Fitting Flux Penetration
Nb Nb3Sn Linear (Nb) Linear (Nb3Sn)
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1
c nuc nuc
T T H T H
Material Hnucleate (0) [mT] Tc [K] Niobium 227 9.36 Nb3Sn 37.1 17.3
Below 9.25K we seem to measure Hsh of niobium, above 9.25K Hc1 of Nb3Sn. If the film induces superheating in niobium this should be independent
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0,2 0,4 0,6 0,8 1 50 100 150 200 250 Volume fraction in Meissner state at 0K Magnetic Field [mT]
Niobium 1400°C annealed MgB2 (150 nm) on Nb MgB2 (50 nm) on Nb MgB2 (300nm) on Nb
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0,2 0,4 0,6 0,8 1 50 100 150 200 250 Volume fraction in Meissner state at 0K Magnetic Field [mT]
50 100 150 200 250 0,2 0,4 0,6 0,8 1 Field of first entry [mT] (T/9.25K)^2
MgB2 (300nm) on Nb
Again temperature dependence as expected for niobium
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Parallel Bullet Transverse Bullets Disk Disk Disk Disk
200 210 220 230 240 250 260 270 280 10 100 1000 10000
Field of first entry [mT] Film Thickness [nm]
Nb3Sn MgB2
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Factor of 70 Theoretical Hsh of Nb
Parallel Bullet Transverse Bullets Disk Disk Disk Disk
200 210 220 230 240 250 260 270 280 10 100 1000 10000
Field of first entry [mT] Film Thickness [nm]
Nb3Sn MgB2
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Factor of 70 Theoretical Hsh of Nb
Hsh=237(11)
Parallel Bullet Transverse Bullets Disk Disk Disk Disk
200 210 220 230 240 250 260 270 280 10 100 1000 10000
Field of first entry [mT] Film Thickness [nm]
Nb3Sn MgB2
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Factor of 70 Theoretical Hsh of Nb
No clear trend for field of first entry on material or thickness. Conclusion: Superheating is induced in niobium
Hsh=237(11)
1.
Introduction to muSR
2.
Using muSR as a local magnetometer (TRIUMF)
1.
Inducing superheating in niobium by thin film coating
3.
Low Energy muSR (PSI)
1.
Proximity effects in NbTiN/Nb and NbTiN/AlN/Nb samples
2.
Magnetic Impurities in Nb/Cu films
4.
Summary
5.
Outlook
1.
BetaNMR
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stopped in a variable depth between 0 and ~100nm
structures
samples
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exponential
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𝜇𝑀 ∝ 1/ 𝑜𝑇
Naive treatment London theory, no proximity effect Experiment
exponential
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Fit cosh(x/λ0)/cosh(d/(2 λ0)) λ0=204(18); d=135(11) Either the NbTiN layer is significantly thicker than 80 nm
proximity effect
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11 K λ0=204(18); d=135(11) 8 K λ0=190(15); d=157(13)
At 8 K a vortex must have entered the niobium
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8 K λ0=190(15); d=157(13) 8 K λ0=380(100); d=98(13) For multilayer systems without insulator there is a wide range proximity effect to be considered.
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1.
Introduction to muSR
2.
Using muSR as a local magnetometer (TRIUMF)
1.
Inducing superheating in niobium by thin film coating
3.
Low Energy muSR (PSI)
1.
Proximity effects in NbTiN/Nb and NbTiN/AlN/Nb samples
2.
Magnetic Impurities in Nb/Cu films
4.
Summary
5.
Outlook
1.
BetaNMR
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Slow Fluctuations Main effect is relaxation of the ⅓ tail at long times, because 1/3 of the muons see a field in spin direction and do not process Fast Fluctuations No recovery. For faster fluctuations slower depolarization (motional narrowing)
⌫ γµ ∆
io
⌫
c
γµ ∆ G .
⌫ γµ∆
Polarization function for different fluctuation
Gaussian distribution of random fields.
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HIPIMS dcMS
bias peaks observed with point contact tunneling (PCT) from ANL (T. Proslier) Zero bias peaks muSR PCT PCT
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We grew a nitrogen overlayer on the sample Stop the muon in the nitrogen but close to the niobum
surface
In nitrogen the muon is known to be static Deviations from the static Kubo-Tuyabe function will give
evidence for magnetic impurities
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function would fit the data
Static Kubo-Toyube*exp(-λ/t)β Static muon – Gaussian Field Distribution No magnetic impurities Systematic deviations
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surfaces and film interfaces
films
face (to replicate rf fields)
materials (Nb3Sn) and new structures (SIS layers)
Existing low field spectrometer New high field spectrometer
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muSR is a technique that allows to measure localized magnetic
Tc material on niobium can push the field of first flux entry from a field consistent with Hc1 to a field consistent with Hsh.
proximity effect to be considered
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