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Radiation Tests on IHPs SiGe Technologies for the Front-End Detector Readout in the S-LHC M. Ulln, S. Dez, F. Campabadal, G. Pellegrini, M. Lozano CNM (CSIC), Barcelona Framework Increased luminosity at S-LHC 2 main challenges on

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Radiation Tests on IHP’s SiGe Technologies for the Front-End Detector Readout in the S-LHC

M. Ullán,
S. Díez, F. Campabadal, G. Pellegrini, M. Lozano

CNM (CSIC), Barcelona

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Framework

Increased luminosity at S-LHC 2 main challenges on Electronics:

Instantaneous ⇒ High occupancy ⇒ pile up

Higher segmentation More channels Power, Services Increased shaping time Speed, Power

Integrated ⇒ Radiation Degradation

Charge Collection Efficiency ↓ Signal ↓ Gain, Power Gain degradation Current ↑ Power Noise degradation S/N ↓ Noise, Power

Need to find a proper technology that deals with these challenges

High speed, high gain with Low power consumption Radiation degradation Cost, availability (prototyping, long term production)

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

General Aims

Evaluation of SiGe BiCMOS technologies for the readout of the

upgraded ATLAS ID

Evaluate radiation hardness Prove power saving with speed and gain

Proposal of one SiGe BiCMOS technology for the IC-FE design Design of a prototype Front End IC.

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

IHP’s SiGe Technologies

Main 200 GHz 0.13 µm Alternative Low cost

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Experiments

2 general experiments: Exp 1: “first approximation”

2 technologies Gamma irradiations up to 10 and 50 Mrads(Si) Neutron irradiations

Exp 2: Final total dose results

3 technologies Gamma irradiations up to 10 and 50 Mrads(Si)

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 1: Samples

2 Test chip wafer pieces with ~20 chips 2 Technologies:

SGC25C (bip. module equivalent to SG25H1) SG25H3 (Alternative technology)

Edge effects: Solved in next samples

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Irradiation Setup

4 chips per board, 2 of each technology 2 different transistor sizes:

0.21 x 0.84 μm2 0.42 x 0.84 μm2

Biased Pb(2 mm) – Al(2 mm) shielding box NAYADE: “Water Well” Co60

source at Madrid (CIEMAT) ~300 rad(Si)/s up to 10 Mrad(Si)

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

IHP’s SGC25C Technology

Bip. tr. equivalent to SG25H1 technology (fT = 200 GHz)

No Annealing !

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

IHP’s SG25H3 Technology

fT = 120 GHz, Higher breakdown voltages Annealing after 50 Mrads: 48 hours, very good recovery Very low gains before irrad (edge wafer transistors)

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Results Exp 1

Excess Base Current @ 0.7 V [10 Mrad(Si)]

0.E+00 5.E-01 1.E+00 2.E+00 2.E+00 3.E+00 3.E+00 4.E+00 4.E+00 5.E+00 5.E+00 C 1 N 1 C 1 X 1 C 2 N 1 C 2 X 1 C 3 N 1 C 3 X 1 C 4 N 1 C 4 X 1 C 3 A 6 1 C 4 A 6 1 C 3 A 2 1 C 3 A 4 1 C 4 A 2 1 C 4 A 4 1 Excess Base Current (ΔΙΒ/ΔΙΒ0) SGC25 SG25H3 unbiased

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Results Exp 1

Bias Current for beta > 50 after 10 Mrad(Si)

0.0E+00 1.0E-06 2.0E-06 3.0E-06 4.0E-06 5.0E-06 6.0E-06 7.0E-06 8.0E-06 9.0E-06 1.0E-05 1.1E-05 1.2E-05

C 1 N 1 C 1 X 1 C 2 N 1 C 2 X 1 C 3 N 1 C 3 X 1 C 4 N 1 C 4 X 1 C 3 A 6 1 C 4 A 6 1 C 3 A 2 1 C 3 A 4 1 C 4 A 2 1 C 4 A 4 1

IC(Beta>50) (A)

SGC25C SG25H3 unbiased

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Samples

3 Test chip wafer center pieces with > 20 chips 3 Technologies:

SG25H1 (“Wafer D”) SG25H3 (“Wafer I”) SGC25VD (“Wafer V”)

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Samples

β target = 190

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Samples

β target = 190

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Samples

No edge effect in the area of interest

S462b (Z2) S461c (Y3)

1 2 3 8 7 6 5 4 3 2 1 10 5 12 5 14 5 16 5 18 5 20 5

185-205 165-185 145-165 125-145 105-125

1 2 3 8 7 6 5 4 3 2 1

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Samples

β target = 200

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Samples

β target = 150

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Heavy rad damage

Transistors heavily damaged but still functional Possible damage saturation Significant beneficial annealing

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Results Exp 2

Normalized gain βf/β0 @VBE = 0.7 V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FJ1N FJ2N FJ3N FJ4N FL1N FL2N FL3N FL4N FL1X FL2X FL3X FL4X FM1Y3 FM2Y3 FM3Y3 FM4Y4 FM1Z2 FM2Z2 FM3Z2 FM4Z2 FM1Z3 FM2Z3 FM3Z3 FM4Z3 Transistor Beta N 10Mrad 10Mrad+ANN 50Mrad 50Mrad+ANN

SG25H1 SG25H3 SGB25VD

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Results Exp 2

Normalized base current density JBf/JB0 @VBE = 0.7 V

2 4 6 8 10 12 14 FJ1N FJ2N FJ3N FJ4N FL1N FL2N FL3N FL4N FL1X FL2X FL3X FL4X FM1Y3 FM2Y3 FM3Y3 FM4Y4 FM1Z2 FM2Z2 FM3Z2 FM4Z2 FM1Z3 FM2Z3 FM3Z3 FM4Z3 tr Jb N 10Mrad 10Mrad+ANN 50Mrad 50Mrad+ANN

SG25H1 SG25H3 SGB25VD

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Results Exp 2

Collector current needed for β = 50

1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 FJ1N FJ2N FJ3N FJ4N FL1N FL2N FL3N FL4N FL1X FL2X FL3X FL4X FM1Y3 FM2Y3 FM3Y3 FM4Y4 FM1Z2 FM2Z2 FM3Z2 FM4Z2 FM1Z3 FM2Z3 FM3Z3 FM4Z3 tr Ic(50) [A] 10Mrad 10Mrad+ANN 50Mrad 50Mrad+ANN

SG25H1 SG25H3 SGB25VD

~ 3 μA

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Tech. comparison

Current Gain Degradation

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 20 30 40 50 60

Gamma Dose [Mrad(Si)] Normalized Gain

SG25H1 SG25H3 SGB25VD

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Exp 2: Tech. comparison

Collector current for β = 50

1.E-07 1.E-06 1.E-05 1.E-04 10 50 Gamma Dose [Mrad(Si)] Ic (Beta = 50)

SG25H1 SG25H3 SGB25VD

No annealing

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Other results

Annealing:

Annealing Jb N 1 2 3 4 5 6 7 8 9 5 10 15 20 25 Days Jb N FM1Y3 FM2Y3 FM1Z2 FM2Z2 FM3Z2 FM4Z2 FM1Z3 FM2Z3 FM3Z3 FM4Z3

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Other results

Biasing:

0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 BIASED GROUNDED FLOATING

Norm. Excess J B

10 Mrad(Si) 50 Mrad(Si)

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Conclusions

Evaluation of three different IHP’s SiGe BiCMOS technologies Results indicate that IHP’s technologies would remain functional

after S-LHC life span

Not large differences in degradation among technologies,

although one can see:

Higher damages in SG25H1 technology, lower damages in SG25H3 technology

Annealing behavior studied, saturation is observed. It has been proven that device irradiations with floating terminals

produce an over-damage on the devices. Small damage differences between biasing or grounding the devices during irradiations.

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Prague, June 2006 8th RD50 Workshop Miguel Ullán – CNM, Barcelona

Future work

100 Mrads(Si) total dose
LDRE – damage vs. dose mapping
Measure more devices/components of technologies
More statistics needed for a finer data analysis
Study emitter geometry influence
Specific TEST CHIP for irradiations is being designed
Investigate damage under n and p irradiation
Temperature influence

Radiation Tests on IHP’s SiGe Technologies for the Front-End Detector Readout in the S-LHC

Framework

Increased luminosity at S-LHC 2 main challenges on Electronics:

General Aims

upgraded ATLAS ID

IHP’s SiGe Technologies

Experiments

Exp 1: Samples

Irradiation Setup

source at Madrid (CIEMAT) ~300 rad(Si)/s up to 10 Mrad(Si)

IHP’s SGC25C Technology

IHP’s SG25H3 Technology

Results Exp 1

Results Exp 1

Exp 2: Samples

Exp 2: Samples

β target = 190

Exp 2: Samples

β target = 190

Exp 2: Samples

Exp 2: Samples

β target = 200

Exp 2: Samples

β target = 150

Heavy rad damage

Results Exp 2

Results Exp 2

Results Exp 2

Exp 2: Tech. comparison

Exp 2: Tech. comparison

Other results

Other results

Conclusions

after S-LHC life span

although one can see:

produce an over-damage on the devices. Small damage differences between biasing or grounding the devices during irradiations.

Future work

Compare with other SiGe technologies Choose DESIGN FE CHIP