Simulation of SiGe Bipolar Devices Introduction Construction of - - PowerPoint PPT Presentation

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Simulation of SiGe Bipolar Devices Introduction Construction of - - PowerPoint PPT Presentation

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Simulation of SiGe Bipolar Devices Introduction Construction of SiGe HBT using ATHENA Mesh Refinement using DevEdit Device Characterization using ATLAS Conclusion - 2 - Simulation of SiGe Bipolar Devices Construction of SiGe HBT

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SLIDE 1

Simulation of SiGe Bipolar Devices

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SLIDE 2

Simulation of SiGe Bipolar Devices

Introduction

  • Construction of SiGe HBT using ATHENA
  • Mesh Refinement using DevEdit
  • Device Characterization using ATLAS
  • Conclusion
  • 2 -
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SLIDE 3

Simulation of SiGe Bipolar Devices

Construction of SiGe HBT using ATHENA

  • Layout
  • Structure cross-section
  • Surface Details
  • Doping Profiles
  • Mesh
  • 3 -
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SLIDE 4

Simulation of SiGe Bipolar Devices

SiGe HBT Layout

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SLIDE 5

Simulation of SiGe Bipolar Devices

SiGe HBT Generated by ATHENA

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SLIDE 6

Simulation of SiGe Bipolar Devices

SiGe HBT

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SLIDE 7

Simulation of SiGe Bipolar Devices

SiGe HBT Doping

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SLIDE 8

Simulation of SiGe Bipolar Devices

Vertical Doping Profile Under the Base Electrode

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SLIDE 9

Simulation of SiGe Bipolar Devices

ATHENA Generated Mesh

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SLIDE 10

Simulation of SiGe Bipolar Devices

Mesh Refinement Using DevEdit

  • ATHENA process mesh is not Ideal for device simulation using

ATLAS

  • DevEdit can provide the correct Interface
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SLIDE 11

Simulation of SiGe Bipolar Devices

Mesh Refinement Using DevEdit

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SLIDE 12

Simulation of SiGe Bipolar Devices

Refined Mesh Generated by DevEdit

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SLIDE 13

Simulation of SiGe Bipolar Devices

Device Characterization Using ATLAS

  • Gummel plot
  • Small signal frequency response
  • Energy bands
  • Example deck
  • 13 -
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SLIDE 14

Simulation of SiGe Bipolar Devices

SiGe HBT Gummel Plot and Gain Curve

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SLIDE 15

Simulation of SiGe Bipolar Devices

Capacitance Versus Frequency

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SLIDE 16

Simulation of SiGe Bipolar Devices

Electron Concentration and Energy Band Diagram

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SLIDE 17

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example

go athena # SiGe HBT simulation (c) Silvaco International 2004 # # Establish initial grid and substrate material # line x location=0.0 spacing=0.1 line x location=0.5 spacing=0.05 line x location=0.7 spacing=0.05 line x location=1.2 spacing=0.1 line x location=2.2 spacing=0.25 # line y location=0.0 spacing=0.01 line y location=0.1 spacing=0.02 line y location=0.5 spacing=0.05 line y location=0.8 spacing=0.15 #

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SLIDE 18

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example (con’t)

init silicon c.phos=2e16 # structure outf=tmpr1.str # init inf=tmpr1.str flip.y implant phos energy=60 dose=3e15 # diffuse time=5 temp=1000 struct outf=temp init inf=temp flip.y # # Deposit Silicon germanium with composition fraction 0.2 for base # deposit sige thick=.1 divis=12 ydy=0.05 dy=0.02 c.frac=0.2 c.boron=1e15 #

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SLIDE 19

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example (con’t)

moments i.boron sige dose=1e13 energy=10 range=0.033 std.dev=0.018 gamma=0.04 kurt=3.2 implant boron energy=10 dose=1.0e13 # # Deposit silicon for the emitter deposit silicon thick=0.2 divis=10 ydy=0.08 dy=0.04 c.phos=1.e15 # moments i.boron sige dose=3e14 energy=12 range=0.033 std.dev=0.018 gamma=0.04 kurt=3.2 implant boron energy=12 dose=3e14 # diffuse time=0.5 temp=920 # # Mask and implant the emitter

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SLIDE 20

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example (con’t)

deposit photo thick=.5 divis=5 etch photo left p1.x=0.5 # moments i.phos sige dose=6e15 energy=38 range=0.0534 std.dev=0.0236 gamma=0.401 kurt=3.1630 implant phos energy=38 dose=6e15#diffuse time=5 temp=920strip # # Deposit and pattern the contact metal deposit aluminum thick=.05 etch aluminum start x=0.5 y=10. etch cont x=0.5 y=-10. etch cont x=1.2 y=-10. etch done x=1.2 y=10. #

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SLIDE 21

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example (con’t)

# Define the electrodes electrode name=emitter x=0.0 electrode name=base x=2.0 electrode name=collector backside # # Define impurity characteristics in each material impurity i.boron acceptor sige impurity i.phos donor sige # structure outfile=example.str go atlas # # Material parameter and model specification #

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SLIDE 22

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example (con’t)

material material=Si taun0=1e-7 taup0=1e-7 material material=SiGe taun0=1.e-8 taup0=1.e-8 model bgn consrh auger fldmob conmob # # Bias collector to 2 volts

  • utput con.band val.band

method gummel newton solve local vcollector=2.0 # # Bias base for Gummel plot

  • utput con.band val.band

method newton trap solve vbase=0.01 solve vbase=0.05

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SLIDE 23

Simulation of SiGe Bipolar Devices

SiGe HBT Worked Example (con’t)

solve vbase=0.2 log outfile=ex_gum.log master solve vbase=0.3 vstep=0.05 name=base vfinal=0.9 save outfile=ex_str.str

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SLIDE 24

Simulation of SiGe Bipolar Devices

Worked Example HBT

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SLIDE 25

Simulation of SiGe Bipolar Devices

Doping Concentration

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SLIDE 26

Simulation of SiGe Bipolar Devices

Gummel Plot and Gain Curve

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SLIDE 27

Simulation of SiGe Bipolar Devices

Electrostatic Potential and Energy Band Diagram

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SLIDE 28

Simulation of SiGe Bipolar Devices

Conclusion

  • ATHENA provides a complete simulation of SiGe processing for

HBT devices

  • DevEdit provides the necessary bridge from process simulations

to device characterization

  • ATLAS provides accurate characterization of device performance
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