Quantum Hall Effects – An Introduction
Mark O. Goerbig
Les Houches Summer School “Ultracold Gases and Quantum Information” July 2009, Singapore
Quantum Hall Effects An Introduction Mark O. Goerbig Les Houches - - PowerPoint PPT Presentation
Quantum Hall Effects An Introduction Mark O. Goerbig Les Houches Summer School Ultracold Gases and Quantum Information July 2009, Singapore Outline Lecture 1 (Basics) History of the quantum Hall effect & samples Landau
Les Houches Summer School “Ultracold Gases and Quantum Information” July 2009, Singapore
– History of the quantum Hall effect & samples – Landau quantisation (2D particle in a B field)
– Landau quantisation in the presence of an external
– Conductance quantisation
– Laughlin’s theory – fractional charge and statistics (anyons) – ...
E z
F
E z
F
E z
F
(a) (b) (c)
V V
G G
metal
(insulator) semiconductor
conduction band acceptor levels band valence
semiconductor
band conduction acceptor levels valence band
metal
(insulator) metal
(insulator)
conduction band acceptor levels valence band
II I
V
G
z z E E E
1 metal
semiconductor
2D electrons
8 12 16 4 Magnetic Field B (T) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ρxy (h/e )
2
0.5 1.0 1.5 2.0 ρ Ω
xx (k )
2/3 3/5 5/9 6/11 7/15 2/5 3/7 4/9 5/11 6/13 7/13 8/15 1 2
/
3 2
/
5/7 4/5 3 4
/ Vx Vy Ix
4/7 5/3 4/3 8/5 7/5 1 2 3 4 5 6
Magnetic Field B[T]
[measurements by J. Smet et al., MPI-Stuttgart]
dopants
F
dopants
F
Grenoble high−field group: Sadowski et al., PRL 97, 266405 (2007) transition C transition B
relative transmission relative transmission Energy [meV] Energy [meV] Transmission energy [meV] Sqrt[B]
n+1
ν = n ν = n−1
ymaxymax
n n−1
n+1 n n−1 (a) (b)
ν = n+1 µ
ν= n+1 ν= n ν= n−1
density of states density of states density of states extended states localised states
F
2 2
2
F
L H L H L H
density of states
2
F
L H
density of states density of states
F
2
F
L H L H
density of states density of states density of states extended states localised states
F
2 2
2
F
L H L H L H
Novoselov et al., Nature 438, 197 (2005) Zhang et al., Nature 438, 201 (2005)
H
2
g
0.10 1.00
T(K)
1.0 10.0 100.0
(∆B)
−1
(∆B)
−1
N = 1 N = 1 N = 0 N = 1 N = 1
Wei et al., Phys. Rev. Lett. 61, 1294 (1988)
s ({zj}) = i<j(zi − zj)2sχp=1({zj})
i<j(zi − zj):
s ({zj}) = i<j(zi − zj)2sχp=1({zj})
i<j(zi − zj):
s,p({zj}) = PLLL
ν = 1/3
pseudo−vortex
electronic filling 1/3 theory CF 1 filled CF level
electron "free" flux quantum
(with 2 flux quanta)
composite fermion (CF)
ν = 1/3 ν = 2/5
pseudo−vortex
theory CF 2 filled CF levels
electron "free" flux quantum
(with 2 flux quanta)
composite fermion (CF)
electronic filling 1/3 1 filled CF level
B = p, with n∗ B = (eB)∗/h:
i<j
Landau levels
|+>
|−>
d ν = 1/2 ν = 1/2 ν = ν + ν = 1
+ + − − T : A sublattice : B sublattice τ τ
2 3 1 2
e
1
e e
A physical spin: SU(2) two−fold valley degeneracy B bilayer: SU(2) isospin SU(2) isospin C graphene (2D graphite) (doubling of LLs) exciton