Optimization of the Generation of Graphene via Hydrogen - - PowerPoint PPT Presentation

▶

Feb 17, 2023 166 likes •341 views

Optimization of the Generation of Graphene via Hydrogen Intercalation Determining the Best T emperature and Time for Making Graphene by Separating the Buffer Layer from the Silicon Carbide Substrate Malynda L. Wood Southwest DeKalb High

SLIDE 1

Optimization of the Generation of Graphene via Hydrogen Intercalation

Determining the Best T emperature and Time for Making Graphene by Separating the Buffer Layer from the Silicon Carbide Substrate Malynda L. Wood Southwest DeKalb High School

Dr. Edward Conrad

July 25, 2014

SLIDE 2

Problem

 Prior samples

intercalated at1100oC damaged

 Needed best

temperature and time to get undamaged samples

SLIDE 3

Graphene

 Two dimensional

structure

 One atom thick  Strong  Conductive

"Graphen" by AlexanderAlUS - Own work. Licensed under Creative Commons Attribution-Share Alike 3.0

SLIDE 4

Buffer Layer

 Buffer layer between substrate and

graphene on silicon face

 Buffer layer is structurally similar to

graphene that is covalently bonded to the substrate

 Hydrogen intercalation can break the

covalent bonds between silicon and the buffer layer

 Converts the buffer layer to quasi-free-

standing graphene

SLIDE 5

Research Objective

 Determine optimum method of

btaining graphene through hydrogen

intercalation by

Determining optimum temperature
Determining optimum time

SLIDE 6

Methodology

 Intercalation process

First Nano Graphene Furnace
600 torr H2
H2 99.999% purity
900 sccm flow rate

SLIDE 7

Methodology

 Samples

intercalated for 2 hours at :

700 C
800 C
900 C
950 C
1000 C

SLIDE 8

Methodology

Samples intercalated

for 3 hours at:

 700 C  900 C

Sample intercalated

for 10 min at

 900 C

All samples

evaluated by Raman Spectroscopy

SLIDE 9

700 C 800 C 900 C 950 C 1000 C

SLIDE 10

SLIDE 11

SLIDE 12

SLIDE 13

Findings

 Of the temperatures tested 900 C

provided the best results

 Of the times tested 10 minutes

produced the best results

SLIDE 14

Next Steps

 Further experiments on finding the

best time

 Determining if these times and

temperatures also apply to etched samples and nanoribbons

SLIDE 15

Lesson Plan

 Resistance

Conductors vs

Insulators

Factors affecting

resistance

 Resistance on a

wire simulations

 Resistance on a

wire lab

 Research paper on

Graphene

SLIDE 16

Optimization of the Generation of Graphene via Hydrogen Intercalation

Determining the Best T emperature and Time for Making Graphene by Separating the Buffer Layer from the Silicon Carbide Substrate Malynda L. Wood Southwest DeKalb High School

July 25, 2014

Problem

 Prior samples

intercalated at1100oC damaged

 Needed best

temperature and time to get undamaged samples

Graphene

 Two dimensional

structure

 One atom thick  Strong  Conductive

Buffer Layer

 Buffer layer between substrate and

graphene on silicon face

 Buffer layer is structurally similar to

graphene that is covalently bonded to the substrate

 Hydrogen intercalation can break the

covalent bonds between silicon and the buffer layer

 Converts the buffer layer to quasi-free-

standing graphene

Research Objective

 Determine optimum method of

intercalation by

Methodology

 Intercalation process

Methodology

 Samples

intercalated for 2 hours at :

Methodology

for 3 hours at:

for 10 min at

evaluated by Raman Spectroscopy

Findings

 Of the temperatures tested 900 C

provided the best results

 Of the times tested 10 minutes

produced the best results

Next Steps

 Further experiments on finding the

best time

 Determining if these times and

temperatures also apply to etched samples and nanoribbons

Lesson Plan

 Resistance

Insulators

resistance

 Resistance on a

wire simulations

 Resistance on a

wire lab

 Research paper on

Graphene

I thankfully acknowledge the following for their invaluable assistance

 National Science Foundation Grant

(DMR1005880)

 Dr. Ed Conrad  Feng Wang  Matthew Conrad  Katie Jenkins  Meredith Nevius  John Pham