November 11, 2003 R. Lai, M. Siddiqui, B. Pitman, M. Nishimoto, K. - - PowerPoint PPT Presentation

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November 11, 2003 R. Lai, M. Siddiqui, B. Pitman, M. Nishimoto, K. - - PowerPoint PPT Presentation

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Highly Linear and Compact MMW Phased Array Transmitters November 11, 2003 R. Lai, M. Siddiqui, B. Pitman, M. Nishimoto, K. Johnson, S. Din, O. Fordham, G. Schreyer, R. Grundbacher, L. Callejo and D. Streit, Northrop Grumman Space Technology,

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SLIDE 1

Highly Linear and Compact MMW Phased Array Transmitters November 11, 2003

  • R. Lai, M. Siddiqui, B. Pitman, M. Nishimoto, K. Johnson, S. Din, O.

Fordham, G. Schreyer, R. Grundbacher, L. Callejo and D. Streit, Northrop Grumman Space Technology, Redondo Beach, CA 90278

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SLIDE 2

1

Critical Technology that will Enable Next Generation Satcom Phased Arrays

  • Next generation phased array designs will be

driven by desire for increased capacity

  • Evolution to smaller beam widths and more

simultaneous beams favors phased arrays ~100 simultaneous beams from one aperture Today’s typical communication links use complex modulation requiring greater than 26 to 30 dB C/N for BER of 10-6 to 10-9

  • Critical phased array technologies will be:
  • High efficiency and linearity SSPA’s

Maintain high C/I with many beams P1dB is not a good measure of linearity for multi-carrier modulation Two tone OIM3 /OIP3 is an approximation for multi- carrier schemes Noise to Power Ratio (NPR) for intra channel signal distortion Adjacent Channel Power Ratio (ACPR) for adjacent channel interference

  • Compact multiple-beam beam formers

Earth coverage, ~1000 beams Need to reduce die size and cost

SATSOFT
  • 0.060
  • 0.040
  • 0.020
0.000 0.020 0.040 0.060 U 0.080 0.100 0.120 V

0.7 deg beams

SATSOFT
  • 0.060
  • 0.040
  • 0.020
0.000 0.020 0.040 0.060 U 0.080 0.100 0.120 V

0.4 deg beams Phased Array

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SLIDE 3

2

Ba Backgr ckground

  • und

Noise Power Ratio Explained Adjacent Channel Power Ratio Explained

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SLIDE 4

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Outline Outline

  • Selected linearity tests were performed at different frequencies

dependent on test equipment availability.

  • A sampling of measurements at frequencies from 20 GHz to 46

GHz are presented.

  • All 1 watt amplifiers have similar topologies:

Show similar P1dB, Psat and OIP3 behavior. ACPR and NPR behavior should be similar. Behavior over temperature is similar.

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SLIDE 5

4

NGST 0.15µm GaAs PHEMT NGST 0.15µm GaAs PHEMT

  • Flight qualified profile (die thickness: 100 µm; 50 µm.)
  • FT ~ 75 to 80 GHz @ VDS = 5V
  • Imax > 600 mA/mm
  • VBD > 9 V @ 0.1 mA/mm, > 11V @ 1 mA/mm
  • Gm > 550 to 600 mS/mm
  • OIP3 > P1dB+ 9dB or better @ 10dB OBO

OIP3 > P1dB+ 9dB holds at 5dB OBO

  • P1dB ~ 400 to 500 mW/mm; Psat ~ 500 to 650 mW/mm
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SLIDE 6

5

20 GHz Driver Ampl 20 GHz Driver Amplifier ifier

Freq:

20 GHz Gain: 20 dB P1dB: 25 dBm (329 mW/mm, 30% PAE) Psat: 26 dBm (414 mW/mm, > 42% PAE) OIP3: 35 dBm (IM3 = -46dBc @10dB OBO) AM/PM < 5 degrees under drive NPR calculated > 18dBc @ 4.5 OBO

  • Using single tone AM/PM,

Pin/Pout and current vs. drive characteristics. PAE at NPR > 18dBc ~ 21% Size: 2.5 mm2

15 16 17 18 19 20 21 22 23 24 25 26 27 Noise Pout (dBm)

APH505 NPR vs Pout

5 10 15 20 25 30 35 40 NPR (dB) and PAE (%) 140 155 170 185 200 215 230 245 Id (mA) 22.48 20.22 22.48 18

NPR_ng10 (L) PAEn_ng10 (L) Idn_ng10 (R) APH505(2-1-1) AM-PM at Fc=20.7GHz

  • 160
  • 155
  • 150
  • 145
  • 140
  • 135
  • 130
  • 125
  • 120
  • 115
  • 110
  • 105
  • 100
  • 95
  • 90

5 6 7 8 9 10 11 12 13 14 15 Pin (dBm) Phase S21 (°) Vd=3.5 Vd=4 Vd=4.5 Vd=5 Vd=5.5

State-of-the-art NPR for multi beam operation

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SLIDE 7

6

24-26 GHz Power Amplifier 24-26 GHz Power Amplifier

Freq:

24 to 26 GHz Gain: 18 dB P1dB: 31 dBm (525 mW/mm, 22% PAE) Psat: 32 dBm (660 mW/mm, 29% PAE) OIP3: 40.5 dBm (IM3 = -45dBc @ 10dB OBO) Size: 5.88 mm2 Amplifier topology chosen for maximum linear performance. PAE was a secondary consideration.

Fixtured PIPO Data @ 25 GHz

5 10 15 20 25 30 35 2 4 6 8 10 12 14 16 Pin (dBm) Pout / Gain 5 10 15 20 25 30 35 Pout(dBm) Gain(dB) PAE(%)

Fixtured OIP3 vs. Pout per Tone

32 33 34 35 36 37 38 39 40 41 42 18 20 22 24 26 28 Pout / Tone (dBm) OIP3 (dBm) 24 GHz 25 GHz 26 GHz

At Pout = (P1dB - 2 dB), IM3= -25 dBc !

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SLIDE 8

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ACPR Test Bench ACPR Test Bench

Excellent linearity (ACPR) @ Pout=P1dB – 9dB

Freq: 26 GHz WCDMA (25MHz BW) up converted to pass band. ACPR > –44dBc @ 5 MHz offset Raw test data (no corrections for test set) Performance is expected to repeat for power amplifiers up to 45 GHz processed in NGST’s 0.15um 4mil GaAs .

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SLIDE 9

8

37-40 GH 37-40 GHz Power Amplifier z Power Amplifier

Freq:

37 to 40 GHz Gain: 15 dB P1dB: 30 dBm (463 mW/mm, 18% PAE) Psat: 31 dBm (583 mW/mm, 20% PAE) OIP3: 41 dBm (IM3 = -40dBc @ 6dB OBO) OIP3 degrades 2 dB at 85 degrees C. OIP3 very well behaved over

temperature.

Size: 4.5 mm2 Temperature performance typical of all NGST linear power amplifiers.

Fixtured PIPO Data @ 38 GHz

5 10 15 20 25 30 35 3 6 9 12 15 18 21 24 Pin (dBm) Pout / Gain 0.00% 5.00% 10.00% 15.00% 20.00% 25.00% Pout(dBm) Gain(dB) PAE(%)

Fixtured IP3 vs. Temperature @ 21 dBm / tone

32 33 34 35 36 37 38 39 40 41 42 37 37.5 38 38.5 39 39.5 40 Frequency (GHz) IP3 (dBm) 25 C 85 C

IM3= -36 dBc @ 85 degrees C with 6dB OBO !

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SLIDE 10

9

40- 40-44 GHz Power Amplifier 44 GHz Power Amplifier

Freq:

40 to 44 GHz Gain: 12 dB P1dB: 29 dBm (368 mW/mm, 14% PAE) Psat: 30 dBm (463 mW/mm, 18% PAE) OIP3: 39 dBm (IM3 = -42dBc @ 8dB OBO) Size: 4.25 mm2

Fixtured PIPO Data @ 42 GHz

5 10 15 20 25 30 35 2 4 6 8 10 12 14 16 18 20 22 Pin (dBm) Pout / Gain 2 4 6 8 10 12 14 16 18 20 PAE (%) Pout(dBm) Gain(dB) PAE(%)

Fixtured Power vs. Frequency

22.00 24.00 26.00 28.00 30.00 32.00 34.00 36.00 38.00 40.00 42.00 40 41 42 43 44 Frequency (GHz) Pout (dBm) P1dB (dBm) P3dB (dBm) OIP3 (dBm)

OIP3 = P1dB + 10dB with gain

  • f only 6dB per stage!
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SLIDE 11

10

43-47 GHz Phased Array Transmit Amplifier 43-47 GHz Phased Array Transmit Amplifier

Freq:

43 to 47 GHz Gain: 22 dB Biased for power: P1dB = 24 dBm (465 mW/mm), PAE>22% Psat = 24.7 dBm (546 mW/mm), PAE > 24% Biased for efficiency: P1dB = 23 dBm (370 mW/mm), PAE > 30% Psat = 23.8 dBm (450 mW/mm), PAE > 35% Size: 3.17 mm2

APH565_A_530 Measured Data @ 45 GHz

5 10 15 20 25

  • 20
  • 15
  • 10
  • 5

5 10 15

Pin (dBm) Pout (dBm), Gain (dB)

5 10 15 20 25 30 35 40

PAE (%)

Pout(dBm) Gain(dB) PAE(%)

APH565 Fixtured Test Results @45 GHz (R5C3M0, 1430-156)

0.0 5.0 10.0 15.0 20.0 25.0 30.0

  • 14 -12 -10 -8
  • 6
  • 4
  • 2

2 4 5 7 9 Pin dBm Pout(dBm), Gain(dB) 5 10 15 20 25 30 PAE% Pout(dBm) Gain(dB) PAE(%)

Biased for Power

State-of-the-art P1dB and PAE from 0.15um, 4mil GaAs process

Biased for PAE

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SLIDE 12

11

Figur Figure of Merit Compariso

  • f Merit Comparison Table

Table

Foundry Year Freq. Stages Chip Size Output S.S. Gain P1dB PAE Psat Psat density OIP3 OIP3:P1dB P1dB density OIP3 density

(GHz) mm2 mm dB dBm % dBm mW/mm dBm mW/mm W/mm NGST 2003 19-21 2 2.5 0.8 18.5 24.0 30.0 25.9 486 35 11 314 3.98

Transcom

2002 14-17 4 4.1 3.6 30 30.8 24.5 31.3 375 333

Triquint

2000 18-26 2 3.9 2.4 15 31.0 25.0 32 660 38.5 7.5 525 2.95 NGST 2003 24-27 2 5.9 2.4 19.5 30.9 24.0 31.6 602 40.5 9.6 513 4.70 NGST 2002 21-26 2 5.9 2.4 19.5 30.9 24.0 31 525 40.5 9.6 513 4.70 NGST 2003 30 1 1.9 2.4 10 31.0 25.7 32 660 40.5 10 525 3.30

UMS

2002 29 2 2.3 2.4 18.5 29.5 30.1 426.4 375

Triquint

2002 30 4 12.9 22.5 34.5 219

Triquint

2000 28-31 2 3.7 2.4 16 29.5 20.0 30.2 436.3 37 7.5 525 2.08

BAE

1999 29-33 2 14.9 10.8 18 34.8 20.0 36.5 413.6 280 NGST 2003 37-40 2 4.5 2.16 15 30.0 18.0 31 583 41 11 463 5.73 NGST 2003 40-44 2 4.3 2.16 15 29.0 12.0 30.5 519 39 10 368 3.64 NGST 2003 43-47 3 3.2 0.54 22 24.0 35.0 24.8 559 465

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SLIDE 13

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CONCLUSIONS CONCLUSIONS

  • Demonstrated state of the art P1dB, Psat, Power Density and

OIP3 in compact die size.

  • Meets high linearity requirements of phased array / radar

transmitters. High gain per stage enables excellent linearity, PAE and compact die size through 46 GHz. Designs use NGST’s flight qualified 0.15µm GaAs PHEMT technology. NGST space qualified 0.15um PHEMT with its proven track record of volume production and use in automated assembly will support high chip counts in large arrays.

  • Next phase in design will reduce area by 50% while maintaining

performance.